Abstract: A method of forming a semiconductor device includes: forming a fin protruding above a substrate, where a top portion of the fin comprises a layer stack that includes alternating layers of a first semiconductor material and a second semiconductor material; forming a dummy gate structure over the fin; forming openings in the fin on opposing sides of the dummy gate structure; forming source/drain regions in the openings; removing the dummy gate structure to expose the first semiconductor material and the second semiconductor material under the dummy gate structure; performing a first etching process to selectively remove the exposed first semiconductor material, where after the first etching process, the exposed second semiconductor material form nanostructures, where each of the nanostructures has a first shape; and after the first etching process, performing a second etching process to reshape each of the nanostructures into a second shape different from the first shape.

Abstract: A method of manufacturing a bump structure includes forming a passivation layer over a substrate. A metal pad structure is formed over the substrate, wherein the passivation layer surrounds the metal pad structure. A polyimide layer including a polyimide is formed over the passivation layer and the metal pad structure. A metal bump is formed over the metal pad structure and the polyimide layer. The polyimide is a reaction product of a dianhydride and a diamine, wherein at least one of the dianhydride and the diamine comprises one selected from the group consisting of a cycloalkane, a fused ring, a bicycloalkane, a tricycloalkane, a bicycloalkene, a tricycloalkene, a spiroalkane, and a heterocyclic ring.

Abstract: A circuit protection device includes a first temperature sensitive resistor, a second temperature sensitive resistor, an electrically insulating multilayer, a first and second electrode layer, and at least one external electrode. The first temperature sensitive resistor and the second temperature sensitive resistor are electrically connected in parallel, and have a first upper electrically conductive layer and a second lower electrically conductive layer, respectively. The electrically insulating multilayer includes an upper insulating layer, a middle insulating layer, and a lower insulating layer. The upper insulating layer is between the first upper electrically conductive layer and the first electrode layer. The middle layer is laminated between the first temperature sensitive resistor and the second temperature sensitive resistor. The lower insulating layer is between the second lower electrically conductive layer and the second electrode layer.

Abstract: A porous material including a composite oxide body containing calcium oxide, iron oxide, and silica, and a plurality of inter-connecting microchannel structures is provided. A preparing method of porous material is further provided. With the inter-connecting microchannel structures of the porous material and the advantages of high porosity and large specific surface area, the porous material has a bright prospect in the fields of catalysts, filters, adsorption materials, and fuel carriers.

Abstract: A ceramic composite and a method of preparing the same are provided. The method of preparing the ceramic composite includes mixing an aluminum slag and a carbon accelerator to obtain a mixture and reacting the mixture at a temperature equal to or greater than 1600° C. in a nitrogen atmosphere to obtain a ceramic composite. The aluminum slag includes aluminum, oxygen, nitrogen, and magnesium. The weight ratio of the oxygen to the aluminum is 0.6 to 2. The weight ratio of the nitrogen to the aluminum is 0.1 to 1.2. The weight ratio of the magnesium to the aluminum is 0.04 to 0.2. The ceramic composite includes aluminum nitride accounting for at least 90 wt % of the ceramic composite.

Abstract: A ceramic composite and a method of preparing the same are provided. The method of preparing the ceramic composite includes mixing an aluminum slag and a carbon accelerator to obtain a mixture and reacting the mixture at a temperature equal to or greater than 1600° C. in a nitrogen atmosphere to obtain a ceramic composite. The aluminum slag includes aluminum, oxygen, nitrogen, and magnesium. The weight ratio of the oxygen to the aluminum is 0.6 to 2. The weight ratio of the nitrogen to the aluminum is 0.1 to 1.2. The weight ratio of the magnesium to the aluminum is 0.04 to 0.2. The ceramic composite includes aluminum nitride accounting for at least 90 wt % of the ceramic composite.

Abstract: A porous material including a composite oxide body containing calcium oxide, iron oxide, and silica, and a plurality of inter-connecting microchannel structures is provided. A preparing method of porous material is further provided. With the inter-connecting microchannel structures of the porous material and the advantages of high porosity and large specific surface area, the porous material has a bright prospect in the fields of catalysts, filters, adsorption materials, and fuel carriers.

Abstract: A method of forming a core-shell composite material includes depositing a polysiloxane shell to wrap a ceramic core via chemical vapor deposition for forming a core-shell composite material, wherein the ceramic core is an oxide of metal and silicon, which includes 100 parts by weight of calcium, 50 to 95 parts by weight of iron, 15 to 40 parts by weight of silicon, 2 to 15 parts by weight of magnesium, 2 to 20 parts by weight of aluminum, and 2 to 10 parts by weight of manganese.

Abstract: A lateral-diffused metal oxide semiconductor device including a substrate, a second deep well, a gate, a source, a drain and a first dopant region is provided. The substrate includes a first deep well having a first conductive type. The second deep well having a second conductive type is disposed in the first deep well. The gate is disposed on the substrate and the boundary of the first and the second deep well. The source and the drain having a second conductive type are disposed beside the gate and in the first deep well and the second deep well respectively. The first dopant region having a first conductive type is disposed in the second deep well, wherein the first dopant region is separated from the drain. Moreover, a method for fabricating said lateral-diffused metal oxide semiconductor device is also provided.

Abstract: An electromagnetic flowmeter with voltage-amplitude conductivity-sensing function for a liquid in a tube includes a first microprocessor, a transducer, flow-sensing device, an exciting-current generating device, a voltage-amplitude conductivity-sensing device, and a switch. The transducer includes coils and sensing electrodes. The switch is electrically connected to the first microprocessor and the sensing electrode. The switch is selectively connected to the flow-sensing device or the voltage-amplitude conductivity-sensing device according to the signals sent from the microprocessor. The microprocessor drives the exciting-current generating device to generate an exciting current when the switch is connected to the flow-sensing device. The microprocessor stops the exciting-current generating device from generating exciting current and computing conductivity of liquid when the switch is electrically connected to the voltage-amplitude conductivity-sensing device.

Abstract: An electromagnetic flowmeter with voltage-amplitude conductivity-sensing function for a liquid in a tube includes a first microprocessor, a transducer, flow-sensing device, an exciting-current generating device, a voltage-amplitude conductivity-sensing device, and a switch. The transducer includes coils and sensing electrodes. The switch is electrically connected to the first microprocessor and the sensing electrode. The switch is selectively connected to the flow-sensing device or the voltage-amplitude conductivity-sensing device according to the signals sent from the microprocessor. The microprocessor makes the exciting-current generating device to generate an exciting current when the switch is connected to the flow-sensing device. The microprocessor makes the exciting-current generating device to stop generating exciting current and computing conductivity of liquid when the switch is electrically connected to the voltage-amplitude conductivity-sensing device.

Abstract: A lateral-diffused metal oxide semiconductor device including a substrate, a second deep well, a gate, a source, a drain and a first dopant region is provided. The substrate includes a first deep well having a first conductive type. The second deep well having a second conductive type is disposed in the first deep well. The gate is disposed on the substrate and the boundary of the first and the second deep well. The source and the drain having a second conductive type are disposed beside the gate and in the first deep well and the second deep well respectively. The first dopant region having a first conductive type is disposed in the second deep well, wherein the first dopant region is separated from the drain. Moreover, a method for fabricating said lateral-diffused metal oxide semiconductor device is also provided.

Abstract: Provided is a semiconductor device including a P-type substrate, a P-type first well region, an N-type second well region, a gate, N-type source and drain regions, a dummy gate and an N-type deep well region. The first well region is in the substrate. The second well region is in the substrate proximate to the first well region. The gate is on the substrate and covers a portion of the first well region and a portion of the second well region. The source region is in the first well region at one side of the gate. The drain region is in the second well region at another side of the gate. The dummy gate is on the substrate between the gate and the drain region. The deep well region is in the substrate and surrounds the first and second well regions. An operation method of the semiconductor device is further provided.

Abstract: Shallow trench isolation structures in a semiconductor device and a method for manufacturing the same. The method includes steps hereinafter. A substrate is provided with a pad oxide layer and a first patterned photoresist layer thereon. A first trench is formed in the substrate corresponding to the first patterned photoresist layer. A first dielectric layer is deposited in the first trench and on the substrate. A second patterned photoresist layer is provided to form an opening in the first dielectric layer and a second trench in the substrate corresponding to the second patterned photoresist layer. A second dielectric layer is deposited to cover the first trench and the second trench in the substrate and the first dielectric layer on the substrate. The second dielectric layer is removed by chemical-mechanical polishing until the first dielectric layer is exposed. The first dielectric layer on the substrate is selectively removed.

Abstract: A lateral-diffused metal oxide semiconductor device including a substrate, a second deep well, a gate, a source, a drain and a first dopant region is provided. The substrate includes a first deep well having a first conductive type. The second deep well having a second conductive type is disposed in the first deep well. The gate is disposed on the substrate and the boundary of the first and the second deep well. The source and the drain having a second conductive type are disposed beside the gate and in the first deep well and the second deep well respectively. The first dopant region having a first conductive type is disposed in the second deep well, wherein the first dopant region is separated from the drain. Moreover, a method for fabricating said lateral-diffused metal oxide semiconductor device is also provided.

Abstract: A LDMOS includes a gate structure disposed on the surface of a semiconductor substrate, a source region having a first conductivity type, a drain region having the first conductivity type, an isolation region surrounding the source/drain regions, a doped region having a second conductivity type, and a base region having the second conductivity type formed in the doped region. The source/drain regions are respectively disposed on two sides of the gate structure. The doped region surrounds the isolation region, and the bottom of the doped region is deeper than the bottom of the isolation region. The base region is disposed at the surface of the semiconductor substrate.

Abstract: An electromagnetic flowmeter with voltage-amplitude conductivity-sensing function for a liquid in a tube includes a first microprocessor, a transducer, flow-sensing device, an exciting-current generating device, a voltage-amplitude conductivity-sensing device, and a switch. The transducer includes coils and sensing electrodes. The switch is electrically connected to the first microprocessor and the sensing electrode. The switch is selectively connected to the flow-sensing device or the voltage-amplitude conductivity-sensing device according to the signals sent from the microprocessor. The microprocessor makes the exciting-current generating device to generate an exciting current when the switch is connected to the flow-sensing device. The microprocessor makes the exciting-current generating device to stop generating exciting current and computing conductivity of liquid when the switch is electrically connected to the voltage-amplitude conductivity-sensing device.