Abstract: Embodiments of the present disclosure provide a method for forming semiconductor device structures. The method includes forming a fin structure having a stack of semiconductor layers comprising first semiconductor layers and second semiconductor layers alternatingly arranged, forming a sacrificial gate structure over a portion of the fin structure, removing the first and second semiconductor layers in a source/drain region of the fin structure that is not covered by the sacrificial gate structure, forming an epitaxial source/drain feature in the source/drain region, removing portions of the sacrificial gate structure to expose the first and second semiconductor layers, removing portions of the second semiconductor layers so that at least one second semiconductor layer has a width less than a width of each of the first semiconductor layers, forming a conformal gate dielectric layer on exposed first and second semiconductor layers, and forming a gate electrode layer on the conformal gate dielectric layer.

Abstract: A semiconductor memory device and method of making the same are disclosed. The semiconductor memory device includes a substrate that includes a memory region and a peripheral region, a transistor including a metal gate located in the peripheral region, a composite dielectric film structure located over the metal gate of the transistor, the composite dielectric film structure including a first dielectric layer and a second dielectric layer over the first dielectric layer, where the second dielectric layer has a greater density than a density of the first dielectric layer, and at least one memory cell located in the memory region. The composite dielectric film structure provides enhanced protection of the metal gate against etching damage and thereby improves device performance.

Abstract: A semiconductor memory device and method of making the same are disclosed. The semiconductor memory device includes a substrate that includes a memory region and a peripheral region, a transistor including a metal gate located in the peripheral region, a composite dielectric film structure located over the metal gate of the transistor, the composite dielectric film structure including a first dielectric layer and a second dielectric layer over the first dielectric layer, where the second dielectric layer has a greater density than a density of the first dielectric layer, and at least one memory cell located in the memory region. The composite dielectric film structure provides enhanced protection of the metal gate against etching damage and thereby improves device performance.

Abstract: A semiconductor memory device and method of making the same are disclosed. The semiconductor memory device includes a substrate that includes a memory region and a peripheral region, a transistor including a metal gate located in the peripheral region, a composite dielectric film structure located over the metal gate of the transistor, the composite dielectric film structure including a first dielectric layer and a second dielectric layer over the first dielectric layer, where the second dielectric layer has a greater density than a density of the first dielectric layer, and at least one memory cell located in the memory region. The composite dielectric film structure provides enhanced protection of the metal gate against etching damage and thereby improves device performance.

Abstract: A semiconductor memory device and method of making the same are disclosed. The semiconductor memory device includes a substrate that includes a memory region and a peripheral region, a transistor including a metal gate located in the peripheral region, a composite dielectric film structure located over the metal gate of the transistor, the composite dielectric film structure including a first dielectric layer and a second dielectric layer over the first dielectric layer, where the second dielectric layer has a greater density than a density of the first dielectric layer, and at least one memory cell located in the memory region. The composite dielectric film structure provides enhanced protection of the metal gate against etching damage and thereby improves device performance.

Abstract: A light emitting diode chip including a substrate and a light emitting diode element layer is provided. The substrate has a growth surface and a plurality of microstructures on the growth surface. An area of the growth surface occupied by the microstructures is A1 and an area of the growth surface not occupied by the micro-structures is A2, such that A1 and A2 satisfy the relation of 0.1?A2/(A1+A2)?0.5. The light emitting diode element layer is disposed on the growth surface of the substrate.

Abstract: A light emitting diode chip including a substrate and a light emitting diode element layer is provided. The substrate has a growth surface and a plurality of microstructures on the growth surface. An area of the growth surface occupied by the microstructures is A1 and an area of the growth surface not occupied by the micro-structures is A2, such that A1 and A2 satisfy the relation of 0.1?A2/(A1+A2)?0.5. The light emitting diode element layer is disposed on the growth surface of the substrate.

Abstract: A light emitting diode chip including a substrate and a light emitting diode element layer is provided. The substrate has a growth surface and a plurality of microstructures on the growth surface. An area of the growth surface occupied by the microstructures is A1 and an area of the growth surface not occupied by the micro-structures is A2, such that A1 and A2 satisfy the relation of 0.1?A2/(A1+A2)?0.5. The light emitting diode element layer is disposed on the growth surface of the substrate.

Abstract: A light emitting diode, including a semiconductor epitaxial structure, a first electrode and a second electrode is provided. The semiconductor epitaxial structure includes a plurality stacked light-emitting layers, and each of the light-emitting layers respectively emits different range of wavelength of light. The first electrode is electrically connected to the semiconductor epitaxial structure. The second electrode is electrically connected to the semiconductor epitaxial structure. Furthermore, a data transmission and reception apparatus is provided.

Abstract: A light emitting diode chip including a substrate and a light emitting diode element layer is provided. The substrate has a growth surface and a plurality of microstructures on the growth surface. An area of the growth surface occupied by the microstructures is A1 and an area of the growth surface not occupied by the micro-structures is A2, such that A1 and A2 satisfy the relation of 0.1?A2/(A1+A2)?0.5. The light emitting diode element layer is disposed on the growth surface of the substrate.

Abstract: A light emitting diode chip including a substrate and a light emitting diode element layer is provided. The substrate has a growth surface and a plurality of microstructures on the growth surface. An area of the growth surface occupied by the microstructures is A1 and an area of the growth surface not occupied by the microstructures is A2, such that A1 and A2 satisfy the relation of 0.1?A2/(A1+A2)?0.5. The light emitting diode element layer is disposed on the growth surface of the substrate.

Abstract: A light emitting diode chip including a substrate and a light emitting diode element layer is provided. The substrate has a growth surface and a plurality of microstructures on the growth surface. An area of the growth surface occupied by the microstructures is A1 and an area of the growth surface not occupied by the microstructures is A2, such that A1 and A2 satisfy the relation of 0.1?A2/(A1+A2)?0.5. The light emitting diode element layer is disposed on the growth surface of the substrate.

Abstract: A light emitting diode, including a semiconductor epitaxial structure, a first electrode and a second electrode is provided. The semiconductor epitaxial structure includes a plurality stacked light-emitting layers, and each of the light-emitting layers respectively emits different range of wavelength of light. The first electrode is electrically connected to the semiconductor epitaxial structure. The second electrode is electrically connected to the semiconductor epitaxial structure. Furthermore, a data transmission and reception apparatus is provided.

Abstract: A light emitting diode chip including a substrate and a light emitting diode element layer is provided. The substrate has a growth surface and a plurality of microstructures on the growth surface, wherein an area of the growth surface occupied by the microstructures is A1 and an area of the growth surface not occupied by the micro-structures is A2, wherein A1 and A2 satisfies the relation of 0.1?A2/(A1+A2)?0.5. The light emitting diode element layer is disposed on the growth surface of the substrate.

Abstract: The present invention provides a optoelectronic device having a surface periodic grating structure and a manufacturing method thereof, which includes: a substrate; a multi-layer semiconductor structure layer formed on the substrate; and a periodic grating structure layer embedded in the multi-layer semiconductor structure layer by etching based on optimized parameters. A direction of an incident light to the optoelectronic device is changed to be resonant to the multi-layer semiconductor structure layer to enhance optoelectricity of the optoelectronic device. The method includes: (1) providing a substrate; (2) forming a multi-layer semiconductor structure layer on the substrate; (3) selecting parameters to perform a design for a periodic grating structure layer on a surface of the multi-layer semiconductor structure layer; and (4) forming the periodic grating structure layer embedded in the multi-layer semiconductor structure layer by etching.

Abstract: The present invention provides a solar cell with a surface staged type antireflective layer, comprising a photoelectric conversion layer having a first surface and a second surface opposite from each other and used for receiving incident photons in order to generate charged carriers; a staged type antireflective layer formed on the first surface; the staged type antireflective layer comprising a textured surface structure formed on the first surface via a coarsening method and a plurality of nanostructures formed to protrude from or indent into the textured surface structure; a front-side conductive layer disposed on top the staged type antireflective layer; and a back-side conductive layer disposed underneath the second surface; wherein the s staged type antireflective layer is used for allowing the solar cell to generate an antireflection effect subject to light in a full spectrum range; wherein the full spectrum range is between 300 nm to 1100 nm.

Abstract: A method, a device and a system for sharing network among a plurality of mobile terminals are provided. The method includes: connecting the plurality of mobile terminals with each other through short-range wireless communication; and when a first mobile terminal has a network request, transmitting a network packet corresponding to the network request to a network side by the first mobile terminal or a second mobile terminal, so as to share a network, wherein the second mobile terminal is connected to the first mobile terminal through short-range wireless communication and can access the network. The method can share network bandwidth among the plurality of mobile terminals, so as to utilize network bandwidth of each mobile terminal optimally.

Abstract: A light emitting diode chip including a substrate and a light emitting diode element layer is provided. The substrate has a growth surface and a plurality of microstructures on the growth surface, wherein an area of the growth surface occupied by the microstructures is A1 and an area of the growth surface not occupied by the micro-structures is A2, wherein A1 and A2 satisfies the relation of 0.1?A2/(A1+A2)?0.5. The light emitting diode element layer is disposed on the growth surface of the substrate.

Abstract: The present invention provides a optoelectronic device having a surface periodic grating structure and a manufacturing method thereof, which includes: a substrate; a multi-layer semiconductor structure layer formed on the substrate; and a periodic grating structure layer embedded in the multi-layer semiconductor structure layer by etching based on optimized parameters. A direction of an incident light to the optoelectronic device is changed to be resonant to the multi-layer semiconductor structure layer to enhance optoelectricity of the optoelectronic device. The method includes: (1) providing a substrate; (2) forming a multi-layer semiconductor structure layer on the substrate; (3) selecting parameters to perform a design for a periodic grating structure layer on a surface of the multi-layer semiconductor structure layer; and (4) forming the periodic grating structure layer embedded in the multi-layer semiconductor structure layer by etching.

Abstract: An apparatus and a method for image recognition and translation are disclosed. In the present invention, an image is captured by an image capturing unit and the words in the image are recognized by a character recognizing module. Next, the recognized words are then translated into a designated language by a translating module. Finally, the translated words are displayed in a display unit. Therefore, the present invention not only avoids the problem that users cannot look up words of which they don't understand the language, but also provides users with a convenient way to input words, such that the purposes of instant use and fast translation are achieved.