Abstract: A spin transfer torque magnetic junction includes a magnetic reference layer structure with magnetic anisotropy perpendicular to a substrate plane. A laminated magnetic free layer comprises at least three sublayers (e.g. sub-layers of CoFeB, CoPt, FePt, or CoPd) having magnetic anisotropy perpendicular to the substrate plane. Each such sublayer is separated from an adjacent one by a dusting layer (e.g. tantalum). An insulative barrier layer (e.g. MgO) is disposed between the laminated free layer and the magnetic reference layer structure. The spin transfer torque magnetic junction includes conductive base and top electrodes, and a current polarizing structure that has magnetic anisotropy parallel to the substrate plane. In certain embodiments, the current polarizing structure may also include a non-magnetic spacer layer (e.g. MgO, copper, etc).

Abstract: A magnetic read apparatus includes a read sensor, a shield structure and a side magnetic bias structure. The read sensor includes a free layer having a side and a nonmagnetic spacer layer. The shield structure includes a shield pinning structure and a shield reference structure. The nonmagnetic spacer layer is between the shield reference structure and the free layer. The shield reference structure is between the shield pinning structure and the nonmagnetic spacer layer. The shield pinning structure includes a pinned magnetic moment in a first direction. The shield reference structure includes a shield reference structure magnetic moment weakly coupled with the pinned magnetic moment. The side magnetic bias structure is adjacent to the side of the free layer.

Abstract: A method and system provide a magnetic transducer having an air-bearing surface (ABS). The method includes providing a first shield, a first read sensor, an antiferromagnetically coupled (AFC) shield that includes an antiferromagnet, a second read sensor and a second shield. The read sensors are between the first and second shields. The AFC shield is between the read sensors. An optional anneal for the first shield is in a magnetic field at a first angle from the ABS. Anneals for the first and second read sensors are in magnetic fields in desired first and second read sensor bias directions. The AFC shield anneal is in a magnetic field at a third angle from the ABS. The second shield anneal is in a magnetic field at a fifth angle from the ABS. The fifth angle is selected based on a thickness and a desired AFC shield bias direction for the antiferromagnet.

Abstract: Disclosed are methods for making ultra-narrow track width (TW) read sensors, and read transducers incorporating such sensors. The methods utilize side-wall line patterning techniques to prepare ultra-narrow mill masks that can be used to prepare the ultra-narrow read sensors.

Abstract: Systems and methods for controlling a thickness of a soft bias layer in a tunnel magnetoresistance (TMR) reader are provided. One such method involves providing a magnetoresistive sensor stack including a free layer and a bottom shield layer, performing contiguous junction milling on the sensor stack, depositing an insulating layer on the sensor stack, depositing a spacer layer on the insulating layer, performing an angled milling sub-process to remove preselected portions of the spacer layer, depositing a soft bias layer on the sensor stack, and depositing a top shield layer on the sensor stack and the soft bias layer. The method can further involve adjusting an alignment of a top surface of the spacer layer with respect to the free layer. In one such case, the top surface of the spacer layer is adjust to be below the free layer.

Abstract: A magnetic read apparatus has an air-bearing surface (ABS) and includes a read sensor and a rear magnetic bias structure. The read sensor includes first and second free layers, a spacer layer and a rear surface opposite to the ABS. The spacer layer is nonmagnetic and between the first and second free layers. The read sensor has a track width in a cross track direction parallel to the ABS. The rear magnetic bias structure magnetically biases the read sensor a stripe height direction perpendicular to the ABS. The read sensor is between the ABS and the rear magnetic bias structure. The rear magnetic bias structure has a width in the cross track direction and a length in the stripe height direction. The length is greater than the width. The width of the rear magnetic bias structure is substantially equal to the track width of the read sensor.

Abstract: A method and system provide a magnetic transducer including first and second read sensors, a shield and a conductive via. The shield is between the first and second read sensors. The magnetic transducer also includes first and second read shields. The shield has a top surface and a bottom surface opposite to the top surface. The bottom surface faces the first read sensor. The conductive via is isolated from the first read shield and the second read shield. The conductive via provides electrical contact to the shield and is electrically connected to the bottom surface of the shield.

Abstract: A magnetic recording transducer comprises a magnetoresistive sensor having a left side, a right side opposite to the left side, a left junction angle at the left side, a right junction angle at the right side, and a track width. The right junction angle and the left junction angle are characterized by a junction angle difference of not more than six degrees. The track width is less than one hundred nanometers. The magnetic recording transducer further comprises a left hard bias structure residing adjacent to the left side of the magnetoresistive sensor, and a right hard bias structure residing adjacent to the right side of the magnetoresistive sensor.

Abstract: A method and system provide a magnetic transducer having an air-bearing surface (ABS). The method includes providing a first shield, a first read sensor, an antiferromagnetically coupled (AFC) shield that includes an antiferromagnet, a second read sensor and a second shield. The read sensors are between the first and second shields. The AFC shield is between the read sensors. An optional anneal for the first shield is in a magnetic field at a first angle from the ABS. Anneals for the first and second read sensors are in magnetic fields in desired first and second read sensor bias directions. The AFC shield anneal is in a magnetic field at a third angle from the ABS. The second shield anneal is in a magnetic field at a fifth angle from the ABS. The fifth angle is selected based on a thickness and a desired AFC shield bias direction for the antiferromagnet.

Abstract: A tunnel magnetoresistance (TMR) read sensor having a tabbed AFM layer and an extended pinned layer and methods for making the same are provided. The TMR read sensor has an AFM layer recessed from the air bearing surface, providing a reduced shield-to-shield distance.

Abstract: Disclosed are methods for making ultra-narrow track width (TW) read sensors, and read transducers incorporating such sensors. The methods utilize side-wall line patterning techniques to prepare ultra-narrow mill masks that can be used to prepare the ultra-narrow read sensors.

Abstract: Systems and methods for controlling a thickness of a soft bias layer in a tunnel magnetoresistance (TMR) reader are provided. One such method involves providing a magnetoresistive sensor stack including a free layer and a bottom shield layer, performing contiguous junction milling on the sensor stack, depositing an insulating layer on the sensor stack, depositing a spacer layer on the insulating layer, performing an angled milling sub-process to remove preselected portions of the spacer layer, depositing a soft bias layer on the sensor stack, and depositing a top shield layer on the sensor stack and the soft bias layer. The method can further involve adjusting an alignment of a top surface of the spacer layer with respect to the free layer. In one such case, the top surface of the spacer layer is adjusted to be below the free layer.

Abstract: A tunnel magnetoresistance (TMR) read sensor having a tabbed AFM layer and an extended pinned layer and methods for making the same are provided. The TMR read sensor has an AFM layer recessed from the air bearing surface, providing a reduced shield-to-shield distance.

Abstract: A spin transfer torque magnetic junction includes a magnetic reference layer structure with magnetic anisotropy perpendicular to a substrate plane. A laminated magnetic free layer comprises at least three sublayers (e.g. sub-layers of CoFeB, CoPt, FePt, or CoPd) having magnetic anisotropy perpendicular to the substrate plane. Each such sublayer is separated from an adjacent one by a dusting layer (e.g. tantalum). An insulative barrier layer (e.g. MgO) is disposed between the laminated free layer and the magnetic reference layer structure. The spin transfer torque magnetic junction includes conductive base and top electrodes, and a current polarizing structure that has magnetic anisotropy parallel to the substrate plane. In certain embodiments, the current polarizing structure may also include a non-magnetic spacer layer (e.g. MgO, copper, etc).

Abstract: A method of fabricating a magnetic device includes forming a sensor having a pinned layer and a free layer. A first reactive ion etch of a sensor stack patterns a hard mask layer with a photoresist image to form a first hard mask. Then a second reactive ion etch is performed to form an extended pinned layer. The method also includes depositing an insulating layer after the second reactive ion etch to protect exposed edges of the sensor stack, and then providing a chemical mechanical planarization (CMP) stop layer on the insulating layer. Subsequently, a CMP of the sensor stack is performed to remove a portion of the insulating layer. The resulting structure is substantially free of residue on the back edges of the sensor.

Abstract: A first layered structure includes a magnetic layer, a first hard mask layer, a second hard mask layer, and a first stepping layer. The first stepping layer is etched through to create a sidewall. A mask-width definition layer is deposited on and adjacent to the sidewall, until a mask-width definition layer thickness is achieved adjacent to the sidewall. The mask-width definition layer is removed except on the sidewall. The first stepping layer is removed. The second hard mask layer is etched away, except for a remainder of the second hard mask layer beneath the mask-width definition layer. The first hard mask layer is etched away around the remainder of the second hard mask layer, to form a dual layer hard mask comprising the remainder of the second hard mask layer and the remainder of the first hard mask layer. The magnetic layer is ion milled around the dual hard mask.

Abstract: A spin transfer torque magnetic junction includes a magnetic reference layer structure with magnetic anisotropy perpendicular to a substrate plane. A laminated magnetic free layer comprises at least three sublayers (e.g. sub-layers of 6 to 30 Angstroms of CoFeB, CoPt, FePt, or CoPd) having magnetic anisotropy perpendicular to the substrate plane. Each such sublayer is separated from an adjacent one by a tantalum dusting layer. An insulative barrier layer (e.g. MgO) is disposed between the laminated free layer and the magnetic reference layer structure. The spin transfer torque magnetic junction includes conductive base and top electrodes, and a current polarizing structure that has magnetic anisotropy parallel to the substrate plane. In certain embodiments, the current polarizing structure may also include a non-magnetic spacer layer (e.g. MgO, copper, etc).

Abstract: A magnetic shield for a magnetic recording head includes a plurality of ferromagnetic layers, a spacer layer, and a buffer layer, wherein the buffer layer includes Co, Fe, B, or a combination thereof and effectively reduces irregular grain growth within the ferromagnetic layers, the spacer layer includes Ru, and the ferromagnetic layers magnetically couple through each of the buffer layer and the spacer layer.

Abstract: A magnetic shield for a magnetic recording head includes a plurality of ferromagnetic layers, a spacer layer, and a buffer layer, wherein the buffer layer includes Co, Fe, B, or a combination thereof and effectively reduces irregular grain growth within the ferromagnetic layers, the spacer layer includes Ru, and the ferromagnetic layers magnetically couple through each of the buffer layer and the spacer layer.

Abstract: A tunnel magnetoresistance (TMR) read sensor having a tabbed AFM layer and an extended pinned layer and methods for making the same are provided. The TMR read sensor has an AFM layer recessed from the air bearing surface, providing a reduced shield-to-shield distance.