Abstract: A power semiconductor device, including a cell region, a transition region, and a terminal region. The transition region is located between the cell region and the terminal region of the device. A first conduction type substrate, a first conduction type epitaxial layer located above the first conduction type substrate, and a first conduction type buffer layer located in the first conduction type epitaxial layer are jointly arranged at the bottoms of the cell region, the transition region, and the terminal region of the device. In a high-current application, since the cell region occupies the largest area of a chip, in a case that breakdown can occur in the cell region and the current can be discharged through the cell region. On the basis of ensuring the BV of the terminal region, a silicon layer step is formed by elevating the position of a top structure of the terminal region.

Abstract: An example method includes providing, to a sequence model (i) a plurality of few-shot prompts, wherein each prompt comprises a demonstration passage, a demonstration task, and a demonstration query, wherein the demonstration task describes a type of retrieval, and wherein the demonstration query is relevant to the demonstration task, and (ii) a plurality of passages sampled from a corpus of passages. The method also includes receiving, from the sequence model and for the plurality of passages and based on the plurality of few-shot prompts, a respective plurality of predicted task-query pairs, the sequence model having been prompted to predict a task based on an input passage, and predict an output query relevant to the predicted task. The method further includes generating a synthetic training dataset comprising the plurality of passages and the respective plurality of predicted task-query pairs. The method also includes providing the synthetic training dataset.

Abstract: A video encoding, decoding method and a decoder are disclosed. The method includes: decoding a bitstream to determine a first-type intra prediction mode parameter of a current block; determining first prediction values of the current block according to the first-type intra prediction mode parameter; determining a first transform parameter of the current block based on the first prediction values of the current block or the first-type intra prediction mode parameter of the current block; determining, based on the first transform parameter, a second transform parameter for transforming the current block; transforming, based on the second transform parameter, transform coefficients of the current block to determine residuals of the current block; and determining reconstructed values of the current block based on the residuals and the first prediction values.

Abstract: One or more systems, devices, computer program products and/or computer-implemented methods of use provided herein relate to training an AI model to predict status of a DBMS. The computer-implemented system can comprise a memory that can store computer executable components. The computer-implemented system can further comprise a processor that can execute the computer executable components stored in the memory, wherein the computer executable components can comprise a data ingestion component that can use testing data of an AI model to generate ingested data by randomly changing one or more records of at least one feature comprised in the testing data, wherein the ingested data can be used to compute a first ratio indicative of inequity of the at least one feature. The computer executable components can further comprise a training component that can train the AI model using at least the first ratio to predict a status of system.

Abstract: A lateral power semiconductor device is provided and includes a second doping type substrate, a first doping type buried layer, a second doping type epitaxial layer, a first doping type drift area, a second doping type first body area, a first doping type drain area, a first doping type source area, a second doping type second body area, a dielectric layer, a control gate, a body electrode, second doping type polysilicon and first doping type polysilicon. The control gate is led out and connected to different potentials; when the device is in an off state, the control gate is connected to a low potential to assist the drift area in depletion; and when the device is in an on state, the control gate is connected to a high potential, and more carriers are induced on a silicon surface below the control gate.

Abstract: In computer methods and systems for operating a database management system using a catalog table collection module each table in the database management system is cataloged. Multiple tables are automatically dispatched into multiple consistency groups by collecting real-time statistics using a real time statistics module. Workload profile data of the database management system is generated using a workload profile collection module, and an optimized multiple consistency group definition for the database management system is generated using a transaction splitting analysis module.

Abstract: An automatic triggering alert for changing a controller proxy in a computer cluster environment can be received, based on monitoring the computer cluster environment and policy rules associated with the computer cluster environment. The triggering alert can be broadcast to a plurality of agents in the computer cluster environment. Candidate proxies among the plurality of agents can be determined. For each of the candidate proxies, a system health status based on a prediction model's forecast and a policy compliance score based on the policy rules can be determined. Based on the system health status and the policy compliance score associated with each of the candidate proxies, a new controller proxy among the candidate proxies can be selected for the computer cluster environment. The new controller proxy can be notified to perform management of the computer cluster environment.

Abstract: A system, method, and computer program product include: collecting runtime history capture data by a data agent operable on a computing device; performing a pre-analysis of entries in the history capture data, the history capture data including a plurality of database transactions corresponding to user tables, and providing formatted history capture data; clustering the formatted history capture data into clusters by data characteristics of interval groups; performing a post-analysis on the clusters and providing a unit data profile for capture data of the user tables; and dynamically updating capture policies corresponding to capture processes for the user tables, the updating based at least on the unit data profile provided by the post-analysis. In some embodiments the clustering is density based. Optionally, an alert is sent when capture process capacity is exceeded.

Abstract: A lateral power semiconductor device includes a first type doping substrate at a bottom of the lateral power semiconductor device, a second type doping drift region, a second type heavy doping drain, a first type doping body; a first type heavy doping body contact and a second type heavy doping source, where dielectric layers are on a right side of the second type heavy doping source; the dielectric layers are arranged at intervals in a longitudinal direction in the first type doping body, and between adjacent dielectric layers in the longitudinal direction is the first type doping body; and a polysilicon is surrounded by the dielectric layer at least on a right side. Compared with conventional trench devices, the lateral power semiconductor device introduces a lateral channel, to increase a current density, thereby realizing a smaller channel on-resistance.

Abstract: Embodiments of the invention are directed to data replication in an active-active databases having a source site and a target site. Aspects include creating a subscription activation message in a capture address space, the subscription activation message having a timestamp after a latest committed timestamp of the active-active databases and transmitting the subscription activation message to a subscription activation module of the target site of the active-active databases. Based on a determination that one or more tables associated with the subscription activation message are inactive, aspects also include repairing the one or more tables. Based on a determination that all tables associated with the subscription activation message are active, aspects include initiate replication of the capture address space from the source site to the target site with a timestamp of the latest committed timestamp.

Abstract: A new variable selective etching technology for thick SOI devices. An SOI material is etched by the following steps: (1) providing an SOI wafer; (2) depositing a composite hard mask with a variable selection ratio to replace a traditional hard mask with an invariable selection ratio; (3) applying a photoresist; (4) mask making, namely defining a to-be-etched region by using a photoetching plate; (5) etching the photoresist in the defined region; (6) etching the composite hard mask; (7) removing the photoresist; (8) etching top silicon by using a second etching method at a first selection ratio; and (9) etching a buried oxide layer by using a third etching method at a second selection ratio. The new variable selective etching technology avoids the damage to a side wall of a deep trench when the buried oxide layer is etched, and does not need to use an excessive thick hard mask.

Abstract: An SOI lateral homogenization field high voltage power semiconductor device, and a manufacturing method and application thereof are provided. The device includes a type I conductive semiconductor substrate, a type II conductive drift region, a type I field clamped layer, type I and type II conductive well regions, the first dielectric oxide layer forming a field oxide layer, the second dielectric oxide layer forming a gate oxide layer, a type II conductive buried dielectric layer, a type II conductive source heavily doped region, a type II conductive drain heavily doped region. The first dielectric oxide layer and the floating field plate polysilicon electrodes form a vertical floating field plate distributed throughout the type II conductive drift region to form a vertical floating equipotential field plate array. When the device is in on-state, high doping concentration can be realized by the full-region depletion effect form the vertical field plate arrays.

Abstract: A power semiconductor device includes a P-type substrate, an N-type well region, a P-type body region, a gate oxide layer, a polysilicon gate, a first oxide layer, a first N+ contact region, a first P+ contact region, drain metal, a first-type doped region, and a gate oxide layer. An end of the P-type body region is flush with or exceeds an end of the polysilicon gate, wherein Cgd of the power semiconductor device is reduced and a switching frequency of the power semiconductor device is increased. A polysilicon field plate connected with a source is introduced over a drift region that is not only shield an influence of the polysilicon gate on the drift region, thereby eliminating Cgd caused by overlapping of traditional polysilicon gate and drift region, but also enable the power semiconductor device to have strong robustness against an hot carrier effect.

Abstract: Embodiments of the invention are directed to data replication in an active-active databases having a source site and a target site. Aspects include creating a subscription activation message in a capture address space, the subscription activation message having a timestamp after a latest committed timestamp of the active-active databases and transmitting the subscription activation message to a subscription activation module of the target site of the active-active databases. Based on a determination that one or more tables associated with the subscription activation message are inactive, aspects also include repairing the one or more tables. Based on a determination that all tables associated with the subscription activation message are active, aspects include initiate replication of the capture address space from the source site to the target site with a timestamp of the latest committed timestamp.

Abstract: A termination structure of a super-junction power device has a novel polysilicon resistive field plate at the top of a termination region between a transition region and an edge of the device. By utilizing the regular distribution of potential in the field plate, an additional electric field is introduced at the top of the termination structure to limit the expansion of a non-depletion region and optimize the distribution of charges. The termination structure includes a first doping type epitaxial layer, a second doping type compensation region, a second doping type body region, a second doping type lateral connection layer, a second doping type body contact region, a first doping type source contact region, a gate oxide layer, a passivation layer, a field oxide layer, a gate electrode, a second doping type edge contact region, a polysilicon resistive field plate, a metal layer and the like.

Abstract: Aspects include monitoring, by a controller, an operational status of a tracker system that is configured to track and record a current status of a job being executed and to report completion of the job to the controller. The recording includes storing two copies of the current status, where a first copy is stored in a shared memory location accessible by the controller. In response to determining, based on the monitoring, that the tracker system is operational, waiting to receive a job completion message for the job from the tracker system and performing a job completion action based on receiving the job completion message. In response to determining that the tracker system is not operational, obtaining the current status of the job from the shared memory location and performing the job completion action based on the current status indicating that the job has completed.

Abstract: A bidirectional conduction trench gate power MOS device and a manufacturing method thereof are provided. A gate electrode, a source electrode and a drain electrode are formed on a surface of a silicon wafer to realize a bidirectional conduction and bidirectional blocking power MOS device used in an application environment such as lithium battery BMS protection.

Abstract: A method for manufacturing a semiconductor device is provided. A drift region and a compensation region are formed through a deep trench etching and a filling technology. A plurality of modulation doping regions are formed at a top of the drift region by an epitaxy and an ion implantation. A modulation region is introduced, wherein the modulation region flexibly modifies capacitance characteristics and achieve improved dynamic characteristics.

Abstract: An SOI lateral homogenization field high voltage power semiconductor device, and a manufacturing method and application thereof are provided. The device includes a type I conductive semiconductor substrate, a type II conductive drift region, a type I field clamped layer, type I and type II conductive well regions, the first dielectric oxide layer forming a field oxide layer, the second dielectric oxide layer forming a gate oxide layer, a type II conductive buried dielectric layer, a type II conductive source heavily doped region, a type II conductive drain heavily doped region. The first dielectric oxide layer and the floating field plate polysilicon electrodes form a vertical floating field plate distributed throughout the type II conductive drift region to form a vertical floating equipotential field plate array. When the device is in on-state, high doping concentration can be realized by the full-region depletion effect form the vertical field plate arrays.

Abstract: A power semiconductor device includes a P-type substrate, an N-type well region, a P-type body region, a gate oxide layer, a polysilicon gate, a first oxide layer, a first N+ contact region, a first P+ contact region, drain metal, a first-type doped region, and a gate oxide layer. An end of the P-type body region is flush with or exceeds an end of the polysilicon gate, wherein Cgd of the power semiconductor device is reduced and a switching frequency of the power semiconductor device is increased. A polysilicon field plate connected with a source is introduced over a drift region that is not only shield an influence of the polysilicon gate on the drift region, thereby eliminating Cgd caused by overlapping of traditional polysilicon gate and drift region, but also enable the power semiconductor device to have strong robustness against an hot carrier effect.