Patents by Inventor Ming-Sheng Huang

Ming-Sheng Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12216407
    Abstract: A multi-spray RRC process with dynamic control to improve final yield and further reduce resist cost is disclosed. In one embodiment, a method, includes: dispensing a first layer of solvent on a semiconductor substrate while spinning at a first speed for a first time period; dispensing the solvent on the semiconductor substrate while spinning at a second speed for a second time period so as to transform the first layer to a second layer of the solvent; dispensing the solvent on the semiconductor substrate while spinning at a third speed for a third time period so as to transform the second layer to a third layer of the solvent; dispensing the solvent on the semiconductor substrate while spinning at a fourth speed for a fourth time period so as to transform the third layer to a fourth layer of the solvent; and dispensing a first layer of photoresist on the fourth layer of the solvent while spinning at a fifth speed for a fifth period of time.
    Type: Grant
    Filed: February 27, 2023
    Date of Patent: February 4, 2025
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ming-Hsuan Chuang, Po-Sheng Lu, Shou-Wen Kuo, Cheng-Yi Huang, Chia-Hung Chu
  • Patent number: 12219770
    Abstract: The present disclosure relates to an integrated chip comprising a substrate having a first pair of opposing sidewalls that define a trench. The trench extends into a front-side surface of the substrate. A first source/drain region is disposed along the front-side surface of the substrate. A second source/drain region is disposed along the front-side surface of the substrate. A gate structure is disposed within the trench and is arranged laterally between the first source/drain region and the second source/drain region. The gate structure fills the trench and extends along the first pair of opposing sidewalls to an upper surface of the substrate. A bottom surface of the gate structure is disposed below a bottom surface of the first source/drain region.
    Type: Grant
    Filed: June 15, 2023
    Date of Patent: February 4, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yong-Sheng Huang, Ming Chyi Liu
  • Patent number: 12205888
    Abstract: Semiconductor packages and methods of forming the same are disclosed. An semiconductor package includes two dies, an encapsulant, a first metal line and a plurality of dummy vias. The encapsulant is disposed between the two dies. The first metal line is disposed over the two dies and the encapsulant, and electrically connected to the two dies. The plurality of dummy vias is disposed over the encapsulant and aside the first metal line.
    Type: Grant
    Filed: August 1, 2023
    Date of Patent: January 21, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd
    Inventors: Ching-Yu Huang, Han-Ping Pu, Ming-Kai Liu, Ting-Chu Ko, Yung-Ping Chiang, Chang-Wen Huang, Yu-Sheng Hsieh
  • Patent number: 7612309
    Abstract: A buffering mechanism for a gas circuit breaker includes a center piece which includes two protrusions extending from two ends thereof and two match surfaces are defined in two opposite sides of the center piece. Two side boards each have a pivot hole and a slot defined therethrough, the two protrusions of each end of the center piece are pivotably engaged with the pivot hole and the slot respectively. A plurality of impact plates are engaged with the two match surfaces of the center piece. When the impact plates are hit by the two links of the Y-shaped link mechanism of the gas circuit breaker at different times, the center piece is pivoted along the slots to absorb impact forces from the two links.
    Type: Grant
    Filed: November 23, 2007
    Date of Patent: November 3, 2009
    Assignee: Chung-Hsin Electric & Machinery Mfg. Corp.
    Inventors: Chang-Ching Chung, Ming-Sheng Huang
  • Publication number: 20090134124
    Abstract: A buffering mechanism for a gas circuit breaker includes a center piece which includes two protrusions extending from two ends thereof and two match surfaces are defined in two opposite sides of the center piece. Two side boards each have a pivot hole and a slot defined therethrough, the two protrusions of each end of the center piece are pivotably engaged with the pivot hole and the slot respectively. A plurality of impact plates are engaged with the two match surfaces of the center piece. When the impact plates are hit by the two links of the Y-shaped link mechanism of the gas circuit breaker at different times, the center piece is pivoted along the slots to absorb impact forces from the two links.
    Type: Application
    Filed: November 23, 2007
    Publication date: May 28, 2009
    Inventors: Chang-Ching Chung, Ming-Sheng Huang
  • Publication number: 20030098053
    Abstract: A canopy structure for a play yard includes a pair of base docks to couple with a canvas bracket, which is adjustable angularly. Each base dock has a pair of claws to clamp the upper frame of the play yard to facilitate installation and storage. The turnable canvas bracket may be adjusted angularly to respond to alterations of sunlight direction to achieve an improved shading effect.
    Type: Application
    Filed: November 19, 2002
    Publication date: May 29, 2003
    Inventor: Ming-Sheng Huang
  • Patent number: D463330
    Type: Grant
    Filed: November 14, 2001
    Date of Patent: September 24, 2002
    Assignee: Link Treasure Limited
    Inventors: Cheng-Fan Yang, Ming-Sheng Huang
  • Patent number: D463760
    Type: Grant
    Filed: November 5, 2001
    Date of Patent: October 1, 2002
    Assignee: Link Treasure Limited
    Inventors: Cheng-Fan Yang, Ming-Sheng Huang