Abstract: A method includes etching a first semiconductor fin and a second semiconductor fin to form first recesses. The first and the second semiconductor fins have a first distance. A third semiconductor fin and a fourth semiconductor fin are etched to form second recesses. The third and the fourth semiconductor fins have a second distance equal to or smaller than the first distance. An epitaxy is performed to simultaneously grow first epitaxy semiconductor regions from the first recesses and second epitaxy semiconductor regions from the second recesses. The first epitaxy semiconductor regions are merged with each other, and the second epitaxy semiconductor regions are separated from each other.

Abstract: Methods and devices including an air gap adjacent a contact element extending to a source/drain feature of a device are described. Some embodiments of the method include depositing a dummy layer, which is subsequently removed to form the air gap. The dummy layer and subsequent air gap may be formed after a SAC dielectric layer such as silicon nitride is formed over an adjacent metal gate structure.

Abstract: A device includes a gate stack; a gate spacer on a sidewall of the gate stack; a source/drain region adjacent the gate stack; a silicide; and a source/drain contact electrically connected to the source/drain region through the silicide. The silicide includes a conformal first portion in the source/drain region, the conformal first portion comprising a metal and silicon; and a conformal second portion over the conformal first portion, the conformal second portion further disposed on a sidewall of the gate spacer, the conformal second portion comprising the metal, silicon, and nitrogen.

Abstract: Doping techniques for fin-like field effect transistors (FinFETs) are disclosed herein. An exemplary method includes forming a fin structure, forming a doped amorphous layer over a portion of the fin structure, and performing a knock-on implantation process to drive a dopant from the doped amorphous layer into the portion of the fin structure, thereby forming a doped feature. The doped amorphous layer includes a non-crystalline form of a material. In some implementations, the knock-on implantation process crystallizes at least a portion of the doped amorphous layer, such that the portion of the doped amorphous layer becomes a part of the fin structure. In some implementations, the doped amorphous layer includes amorphous silicon, and the knock-on implantation process crystallizes a portion of the doped amorphous silicon layer.

Abstract: A detection device for detecting a workpiece with multiple surfaces includes a rotary table carrying the workpiece and moving the workpiece by rotation and a plurality of photographing devices arranged at a plurality of different positions around the rotary table. Each photographing device has an image capture device capturing an image of a corresponding surface of the workpiece that is moved to the image capture device. An orientation of the image capture device is defined by a first offset angle and a second offset angle when the image capture device captures the image of the corresponding surface of the workpiece.

Abstract: A device for detecting a slot wedge, an air gap and a broken rotor bar is provided, where a sequential circuit generates double concurrent pulses; the sequential circuit is connected to driving power modules; the driving power modules are connected to front-end interface circuits; the front-end interface circuits convert the double concurrent pulses into corresponding magnetic-field pulses; the magnetic-field pulses are transmitted to power supply terminals on adjacent phases of stator windings through impedance matching pins and coupled at a corresponding coil, air gap and squirrel cage rotor to generate single groups of cyclic rotating magnetic potentials; single rotating magnetic potentials are sequentially generated in adjacent slots on each of the phases of the stator windings; rotating electric potentials in magnetic circuits with two symmetrical phases are magnetically coupled to form distributed coupling magnetic field reflected full-cycle waves for reflecting a difference of a corresponding slot wedg

Abstract: A method of forming a semiconductor device includes providing a substrate including a circuit region and a well strap region, forming a mandrel extending from the circuit region to the well strap region, depositing mandrel spacers on sidewalls of the mandrel, removing the mandrel in the circuit region, while the mandrel in the well strap region remains intact, patterning the substrate with the mandrel spacers in the circuit region and the mandrel in the well strap region as an etch mask, thereby forming at least a first fin in the circuit region and a second fin in the well strap region, and epitaxially growing a first epitaxial feature over the first fin in the circuit region and a second epitaxial feature over the second fin in the well strap region. A width of the second fin is larger than a width of the first fin.

Abstract: In an embodiment, a device includes: a gate electrode; a epitaxial source/drain region adjacent the gate electrode; one or more inter-layer dielectric (ILD) layers over the epitaxial source/drain region; a first source/drain contact extending through the ILD layers, the first source/drain contact connected to the epitaxial source/drain region; a contact spacer surrounding the first source/drain contact; and a void disposed between the contact spacer and the ILD layers.

Abstract: A key-value store and a file system are integrated together to provide improved operations. The key-value store can include a log engine, a hash engine, a sorting engine, and a garbage collection manager. The features of the key-value store can be configured to reduce the number of I/O operations involving the file system, thereby improving read efficiency, reducing write latency, and reducing write amplification issues inherent in the combined key-value store and file system.

Abstract: Some implementations described herein include systems and techniques for fabricating a wafer-on-wafer product using a filled lateral gap between beveled regions of wafers included in a stacked-wafer assembly and along a perimeter region of the stacked-wafer assembly. The systems and techniques include a deposition tool having an electrode with a protrusion that enhances an electromagnetic field along the perimeter region of the stacked-wafer assembly during a deposition operation performed by the deposition tool. Relative to an electromagnetic field generated by a deposition tool not including the electrode with the protrusion, the enhanced electromagnetic field improves the deposition operation so that a supporting fill material may be sufficiently deposited.

Abstract: A memory array and an operation method of the memory array are provided. The memory array includes first and second ferroelectric memory devices formed along a gate electrode, a channel layer and a ferroelectric layer between the gate electrode and the channel layer. The ferroelectric memory devices include: a common source/drain electrode and two respective source/drain electrodes, separately in contact with a side of the channel layer opposite to the ferroelectric layer, wherein the common source/drain electrode is disposed between the respective source/drain electrodes; and first and second auxiliary gates, capacitively coupled to the channel layer, wherein the first auxiliary gate is located between the common source/drain electrode and one of the respective source/drain electrodes, and the second auxiliary gate is located between the common source/drain electrode and the other respective source/drain electrode.

Abstract: A radio physical layer protocol data unit (PPDU) sending method includes: obtaining, a radio physical layer protocol data unit (PPDU), wherein the PPDU includes a high efficiency-signal field A (HE-SIG-A) and a high efficiency-signal field B (HE-SIG-B), the HE-SIG-A includes a field indicating a quantity of orthogonal frequency division multiplexing (OFDM) symbols in the HE-SIG-B, and wherein a value of the field indicates one of the following: that the quantity of OFDM symbols included in the HE-SIG-B is greater than or equal to 16, or the quantity of OFDM symbols included in the HE-SIG-B; and sending the PPDU.

Abstract: An automatic yarn feeding system is provided. The system comprises a yarn feeding track which is arranged on the twisting machine in a length direction of the twisting machine and provided with a yarn feeding manipulator walking along the yarn feeding track; and a supply zone which is arranged on one side of the yarn feeding track and used to buffer base yarns. The yarn feeding manipulator is used to convey the base yarns from the supply zone to a yarn feeding creel of each spindle position. The yarn feeding track is located in the middle of the top of the twisting machine. The supply zone is provided with a structure for buffering a plurality of base yarns, and is located on one side of an end of the yarn feeding track on the top of a control cabinet.

Abstract: A light emitting plate, a wiring plate and a display device are provided. The light emitting plate includes light emitting units. Each light emitting unit includes a light emitting sub-unit including a connection line unit and a light emitting diode chip connected with the connection line unit. The connection line unit includes electrical contact pairs, and each electrical contact pairs includes a first electrode contact and a second electrode contact; in each connection line unit, the second electrode contacts are electrically connected with each other, the first electrode contacts are electrically connected with each other, and only one electrical contact pairs in each connection line unit is connected with the light emitting diode chip; in each connection line unit, at least two first electrode contacts are arranged adjacent to each other, and at least two first electrode contacts are arranged between at least two second electrode contacts.

Abstract: An electronic device may be provided with peripheral conductive housing structures having first and second segments. A flexible printed circuit may have a first tail that extends along the first and second segments and a second tail that extends along the first segment. A conductive trace on the first tail may be coupled to an antenna feed terminal on the second segment. A conductive trace on the second tail may couple the conductive trace on the first tail to the first segment. A tuner and filters may be disposed on the flexible printed circuit and may be coupled to the conductive traces. The conductive trace on the second tail may have a tapered width. An antenna in the device may have a resonating element that includes both the first and second segments, thereby allowing the antenna to exhibit a wide bandwidth from 1.1-5 GHz.

Abstract: A lithography method to pattern a first semiconductor wafer is disclosed. An optical mask is positioned over the first semiconductor wafer. A first region of the first semiconductor wafer is patterned by directing light from a light source through transparent regions of the optical mask. A second region of the first semiconductor wafer is patterned by directing energy from an energy source to the second region, wherein the patterning of the second region comprises direct-beam writing.

Abstract: A method of fabricating a semiconductor device includes applying a plasma to a portion of a metal dichalcogenide film. The metal dichalcogenide film includes a first metal and a chalcogen selected from the group consisting of S, Se, Te, and combinations thereof. A metal layer including a second metal is formed over the portion of the metal dichalcogenide film after applying the plasma.

Abstract: A reasonable millisecond time control method for excavation blasting of a tunnel is provided, and includes: acquiring physical mechanical parameters to establish a millisecond blasting model, and designing four dimensions blasting parameters of explosive quantity, hole number, inter-hole millisecond and inter-row millisecond; simulating, based on the millisecond blasting model, a blasting process of an explosive package using blasting parameters to obtain a blasting vibration curve; obtaining single-hole blasting vibration waveforms, solving a vibration synthesis curve through a vibration synthesis theory; comparing the vibration synthesis curve with the blasting vibration curve to obtain a coupling relationship of blasting parameters; determining a target group of explosive quantity and hole numbers, determining a target millisecond through the coupling relationship of blasting parameters, and relating a millisecond blasting control strategy to control, and it is used for tunneling project to reduce cut blas

Abstract: A mouse pad device is provided. The mouse pad device includes a mouse pad body, a first mouse pad secondary resonant circuit, and a second mouse pad secondary resonant circuit. The first mouse pad secondary resonant circuit receives an external wireless power from a wireless power supply. The second mouse pad secondary resonant circuit receives a relay wireless power from the first mouse pad secondary resonant circuit. The first mouse pad secondary resonant circuit and the second mouse pad secondary resonant circuit are arranged in the mouse pad body. The first mouse pad secondary resonant circuit provides a first wireless power to the mouse device. The second mouse pad secondary resonant circuit provides a second wireless power to the keyboard device according to the relay wireless power.