Patents by Inventor Ming-Yi Lee

Ming-Yi Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10714424
    Abstract: A device includes a first conductive feature disposed over a substrate; a second conductive feature disposed directly on and in physical contact with the first conductive feature; a dielectric layer surrounding sidewalls of the second conductive feature; and a first barrier layer interposed between the second conductive feature and the dielectric layer and in physical contact with both the second conductive feature and the dielectric layer. The first barrier layer and the dielectric layer comprise at least two common elements.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: July 14, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shin-Yi Yang, Ming-Han Lee, Shau-Lin Shue, Tz-Jun Kuo
  • Publication number: 20200201067
    Abstract: A displaying device adapted to a screen is provided. The displaying device includes a transparent pyramid, a movable support, and an image conversion unit. The movable support is connected to the transparent pyramid to move the transparent pyramid between a first location and a second location which is different from the first location. The first location is the position on the screen. The image conversion unit is configured to receive image data. When the transparent pyramid moves to the first location, the image conversion unit converts the image data to a holographic image displayed on the screen, and the transparent pyramid generates a 3D hologram based on the holographic image.
    Type: Application
    Filed: December 18, 2019
    Publication date: June 25, 2020
    Inventors: Wen-Hao HSIEH, Kai-Ze LUO, Ming-Lung LIN, Yu-Chen LEE, Sheng-Yen TSENG, Yen-Hui ZHENG, Kuan-Yi LIN, Chih-Shien LIN
  • Publication number: 20200193244
    Abstract: A neural network model fusion method and an electronic device using the same are provided. The neural network model fusion method includes the following steps. An image is received. The image is analyzed through several neural network models. The neural network models include at least two of a degree classification model, a multi-class identification model and an object detection model. Several analysis results are obtained according to the neural network models. These analysis results are converted into a number of conversion factors. The conversion factors are inputted into a fusion model to obtain a fusion result.
    Type: Application
    Filed: December 14, 2018
    Publication date: June 18, 2020
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Jiazheng ZHOU, Ming-Shan DENG, Xuan-Yi LIN, Ya-Wen LEE, Shih-Fang CHANG
  • Publication number: 20200188695
    Abstract: A beam shaping assembly for neutron capture therapy includes a beam inlet, a target having nuclear reaction with an incident proton beam from the beam inlet to produce neutrons forming a neutron beam, a moderator adjoining to the target, a reflector surrounding the moderator, a thermal neutron absorber adjoining to the moderator, a radiation shield arranged inside the beam shaping assembly and a beam outlet. The material of the moderator is subjected to a powder sintering process using a powder sintering device so as to change powders or a power compact into blocks. The reflector leads the neutrons deviated from the main axis back. The thermal neutron absorber is used for absorbing thermal neutrons so as to avoid overdosing in superficial normal tissue during therapy. The radiation shield is used for shielding leaking neutrons and photons so as to reduce dose of the normal tissue not exposed to irradiation.
    Type: Application
    Filed: December 26, 2019
    Publication date: June 18, 2020
    Inventors: Yuan-hao LIU, Wei-Iin CHEN, Pei-yi LEE, Ming-chuan CHANG, Wenyu XU
  • Publication number: 20200192069
    Abstract: Wide angle lens for imaging objects disposed away from the optical axis towards the periphery of the field of view.
    Type: Application
    Filed: May 31, 2018
    Publication date: June 18, 2020
    Inventors: Maksim MAKEEV, Mark S SCHNITTMAN, Xiaoyu MIAO, Ming-lin LEE, Cheng-Yi Lai, Chien-Hung CHOU
  • Patent number: 10661357
    Abstract: A drill structure comprises a shank part and a bit part. A web is formed on the front end of the bit part. Two sides of the web are tilted backward to form two cutting faces. At least one chip-discharge groove is formed on the surface of the bit part. Each cutting face includes a primary cutting face and a secondary cutting face. The thickness of the prismatic web edge of at least one primary cutting face is smaller than the outer-side width of the primary cutting face. An auxiliary cutting face is extended to the wall of the flute from the cutting edge of the primary cutting face and a portion of a blade back of the secondary cutting face of another cutting face. The present invention decreases the drilling resistance during drilling a hole and increases the service life of the drill bit.
    Type: Grant
    Filed: September 10, 2018
    Date of Patent: May 26, 2020
    Assignee: TCT GLOBAL LIMITED
    Inventors: Sung Hao Chien, Li Yi Chao, Feng Yu Lin, Cheng Chia Lee, Ming Yuan Zhao, Chun Yu Chen
  • Publication number: 20200152763
    Abstract: Embodiments disclosed herein relate generally to forming an effective metal diffusion barrier in sidewalls of epitaxy source/drain regions. In an embodiment, a structure includes an active area having a source/drain region on a substrate, a dielectric layer over the active area and having a sidewall aligned with the sidewall of the source/drain region, and a conductive feature along the sidewall of the dielectric layer to the source/drain region. The source/drain region has a sidewall and a lateral surface extending laterally from the sidewall of the source/drain region, and the source/drain region further includes a nitrided region extending laterally from the sidewall of the source/drain region into the source/drain region. The conductive feature includes a silicide region along the lateral surface of the source/drain region and along at least a portion of the sidewall of the source/drain region.
    Type: Application
    Filed: January 13, 2020
    Publication date: May 14, 2020
    Inventors: Yu-Wen Cheng, Cheng-Tung Lin, Chih-Wei Chang, Hong-Mao Lee, Ming-Hsing Tsai, Sheng-Hsuan Lin, Wei-Jung Lin, Yan-Ming Tsai, Yu-Shiuan Wang, Hung-Hsu Chen, Wei-Yip Loh, Ya-Yi Cheng
  • Patent number: 10651279
    Abstract: The present disclosure relates to a semiconductor device and a manufacturing method, and more particularly to a semiconductor interconnect structure incorporating a graphed barrier layer. The present disclosure provides a method of forming a graphed barrier layer by thermally annealing amorphous carbon layers on metal catalyst surfaces. The thickness of the graphed barrier layers can be selected by varying the thickness of the amorphous carbon layer.
    Type: Grant
    Filed: December 20, 2018
    Date of Patent: May 12, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shin-Yi Yang, Ching-Fu Yeh, Ming-Han Lee, Shau-Lin Shue
  • Publication number: 20200135655
    Abstract: A method includes forming a trench within a dielectric layer, the trench comprising an interconnect portion and a via portion, the via portion exposing an underlying conductive feature. The method further includes depositing a seed layer within the trench, depositing a carbon layer on the seed layer, performing a carbon dissolution process to cause a graphene layer to form between the seed layer and the underlying conductive feature, and filling a remainder of the trench with a conductive material.
    Type: Application
    Filed: September 4, 2019
    Publication date: April 30, 2020
    Inventors: Shin-Yi Yang, Ming-Han Lee, Shau-Lin Shue
  • Publication number: 20200118925
    Abstract: A semiconductor structure includes a semiconductor substrate, a via, a first dielectric layer, a first graphene layer, a metal line, and a second graphene layer. The via is over the semiconductor substrate. The first dielectric layer laterally surrounds the via. The first graphene layer extends along a top surface of the via. The metal line is over the via and is in contact with the first graphene layer. The second graphene layer peripherally encloses the metal line and the first graphene layer.
    Type: Application
    Filed: December 13, 2019
    Publication date: April 16, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shin-Yi YANG, Ming-Han LEE, Shau-Lin SHUE
  • Publication number: 20200118924
    Abstract: A method for manufacturing a semiconductor structure includes: forming a dielectric layer over a conductive layer on a semiconductor substrate; etching the dielectric layer to form a via hole that exposes the conductive layer; depositing a barrier layer to line the via hole; after depositing the barrier layer, depositing a first metal layer to fill a remainder of the via hole; performing a chemical mechanical polishing (CMP) process on the first metal layer until the barrier layer is exposed; after performing the CMP process, depositing a second metal layer over the barrier layer and the first metal layer; and etching the second metal layer to form a metal line.
    Type: Application
    Filed: December 13, 2019
    Publication date: April 16, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shin-Yi YANG, Ming-Han LEE, Shau-Lin SHUE
  • Patent number: 10617893
    Abstract: A beam shaping assembly for neutron capture therapy includes a beam inlet, a target having nuclear reaction with an incident proton beam from the beam inlet to produce neutrons forming a neutron beam, a moderator adjoining to the target, a reflector surrounding the moderator, a thermal neutron absorber adjoining to the moderator, a radiation shield arranged inside the beam shaping assembly and a beam outlet. The material of the moderator is subjected to a powder sintering process using a powder sintering device so as to change powders or a power compact into blocks. The reflector leads the neutrons deviated from the main axis back. The thermal neutron absorber is used for absorbing thermal neutrons so as to avoid overdosing in superficial normal tissue during therapy. The radiation shield is used for shielding leaking neutrons and photons so as to reduce dose of the normal tissue not exposed to irradiation.
    Type: Grant
    Filed: May 2, 2019
    Date of Patent: April 14, 2020
    Assignee: NEUBORON MEDTECH LTD.
    Inventors: Yuan-hao Liu, Wei-lin Chen, Pei-yi Lee, Ming-chuan Chang, Wenyu Xu
  • Patent number: 10619266
    Abstract: A method for forming a semiconductor structure is disclosed. A substrate is provided. A pad metal and a fuse metal are formed on the substrate. A liner is formed on the pad metal and on the fuse metal. An etching stop layer is formed on the portion of the liner on the fuse metal. A dielectric layer and a passivation layer are formed on the liner and on the etching stop layer. After defining a pad opening and a fuse opening in the passivation layer, a first etching step is performed to remove the dielectric layer from the pad opening and the fuse opening until the pad metal and the etching stop layer are exposed. Afterward, a second etching step is performed to remove the exposed etching stop layer from the fuse opening until the liner on the fuse metal is exposed.
    Type: Grant
    Filed: October 7, 2019
    Date of Patent: April 14, 2020
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Feng-Yi Chang, Fu-Che Lee, Ming-Feng Kuo
  • Publication number: 20200105764
    Abstract: A method of forming a layout definition of a semiconductor device includes the following steps. Firstly, a plurality of first patterns is established to form a material layer over a substrate, with the first patterns being regularly arranged in a plurality of columns along a first direction to form an array arrangement. Next, a plurality of second patterns is established to surround the first patterns. Then, a third pattern is established to form a blocking layer on the material layer, with the third pattern being overlapped with a portion of the second patterns and with at least one of the second patterns being partially exposed from the third pattern. Finally, the first patterns are used to form a plurality of first openings in a stacked structure on the substrate to expose a portion of the substrate respectively.
    Type: Application
    Filed: October 31, 2018
    Publication date: April 2, 2020
    Inventors: Wei-Lun Hsu, Gang-Yi Lin, Yu-Hsiang Hung, Ying-Chih Lin, Feng-Yi Chang, Ming-Te Wei, Shih-Fang Tzou, Fu-Che Lee, Chia-Liang Liao
  • Publication number: 20200096295
    Abstract: Clearing landmines is a dangerous activity and the danger is increased when trying to clear a landmine without triggering an explosion. An excavator for landmines is provided, which includes a first actuator that vertically moves a mounting plate. Two or more secondary actuators are mounted to the mounting plate, and each of the secondary actuators are able to extend and retract a tool. Each respective tool has drill bits or prongs for penetrating a ground surface. A neutralizer is also provided, and it includes: a robotic clamp to grip a landmine and to reposition the same; a cutting tool to cut an opening into the landmine; a steaming module to eject steam into the opening; and a catcher to collect melted explosive material that exits the landmine.
    Type: Application
    Filed: December 12, 2017
    Publication date: March 26, 2020
    Inventors: Prosithyrith YIM YIM, Christian Joseph LEE, Baruch Chung-Kay CHAU, Ming Xinchi HU, Jonathan Jiayu DENG, Brian Yi LIU, Daniel Alan SAUNDERS
  • Publication number: 20200091055
    Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first conductive feature over a substrate. The method also includes forming an insulating layer over the substrate and covering the first conductive feature. The method also includes forming a first opening in the insulating layer to expose the first conductive feature. The method also includes recessing the exposed first conductive feature through the first opening, so as to form a second opening in the first conductive feature and below the first opening. The method also includes filling the first opening and the second opening with a second conductive feature.
    Type: Application
    Filed: September 19, 2018
    Publication date: March 19, 2020
    Inventors: Shin-Yi YANG, Ming-Han LEE
  • Publication number: 20200043812
    Abstract: Some embodiments of the present disclosure relate to a processing tool. The tool includes a housing enclosing a processing chamber, and an input/output port configured to pass a wafer through the housing into and out of the processing chamber. A back-side macro-inspection system is arranged within the processing chamber and is configured to image a back side of the wafer. A front-side macro-inspection system is arranged within the processing chamber and is configured to image a front side of the wafer according to a first image resolution. A front-side micro-inspection system is arranged within the processing chamber and is configured to image the front side of the wafer according to a second image resolution which is higher than the first image resolution.
    Type: Application
    Filed: October 14, 2019
    Publication date: February 6, 2020
    Inventors: Chia-Han Lin, Chien-Fa Lee, Hsu-Shui Liu, Jiun-Rong Pai, Sheng-Hsiang Chuang, Surendra Kumar Soni, Shou-Wen Kuo, Wu-An Weng, Gary Tsai, Chien-Ko Liao, Ya Hsun Hsueh, Becky Liao, Ethan Yu, Ming-Chi Tsai, Kuo-Yi Liu
  • Publication number: 20200032413
    Abstract: A method for forming a semiconductor structure is disclosed. A substrate is provided. A pad metal and a fuse metal are formed on the substrate. A liner is formed on the pad metal and on the fuse metal. An etching stop layer is formed on the portion of the liner on the fuse metal. A dielectric layer and a passivation layer are formed on the liner and on the etching stop layer. After defining a pad opening and a fuse opening in the passivation layer, a first etching step is performed to remove the dielectric layer from the pad opening and the fuse opening until the pad metal and the etching stop layer are exposed. Afterward, a second etching step is performed to remove the exposed etching stop layer from the fuse opening until the liner on the fuse metal is exposed.
    Type: Application
    Filed: October 7, 2019
    Publication date: January 30, 2020
    Inventors: Feng-Yi Chang, Fu-Che Lee, Ming-Feng Kuo
  • Publication number: 20200025328
    Abstract: A supporting stand for supporting a panel is provided. The supporting stand comprises a base, a one-way damper, a force module, and a rotating element. The one-way damper is disposed on the first connecting board. The force module is disposed on the base and including a mandrel. The rotating element is connected to the panel, the one-way damper, and the force module, and is actuated together with the one-way damper and the force module so that the panel is capable of rotating around the mandrel in a first rotating direction or a second rotating direction. When the rotating element rotates in the first rotating direction, the one-way damper provides a first backward torque to the rotating element; when the rotating element rotates in the second rotating direction, the one-way damper do not provide torque to the rotating element but the force module provides a second forward torque when the rotating element rotates in the second rotating direction.
    Type: Application
    Filed: July 17, 2019
    Publication date: January 23, 2020
    Inventors: Jen-Yi LEE, Ming-Chih SHIH
  • Publication number: 20200025329
    Abstract: A supporting stand for supporting a panel is provided. The supporting stand comprises a base, a first force module, a one-way bearing, a rotating element, and a second force module. The base includes a bottom board and a first connecting board. The first force module is disposed on the first connecting board and includes a mandrel. The one-way bearing includes a shaft hole for the mandrel disposed therethrough. The rotating element connects with the one-way bearing and the panel so that the panel is capable of rotating at the mandrel along a first rotating direction or a second rotating direction opposite to the first rotating direction. The second force module is disposed on the base and actuated together with the rotating element. When the panel and the rotating element rotate along the first rotating direction, the one-way bearing refrains the first force module from providing a first backward torque to the rotating element.
    Type: Application
    Filed: July 17, 2019
    Publication date: January 23, 2020
    Inventors: Jen-Yi Lee, Ming-Chih Shih