Patents by Inventor Mingyuan SONG
Mingyuan SONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220384714Abstract: A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a selector layer coupled to the first terminal.Type: ApplicationFiled: August 10, 2022Publication date: December 1, 2022Inventors: MingYuan SONG, Shy-Jay LIN, William J. GALLAGHER, Hiroki NOGUCHI
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Publication number: 20220375993Abstract: A spin-orbit-torque (SOT) magnetic device includes a bottom metal layer, a first magnetic layer disposed over the bottom metal layer, a spacer layer disposed over the first magnetic layer, and a second magnetic layer disposed over the spacer layer. A diffusion barrier layer for suppressing metal elements of the first magnetic layer from diffusing into the bottom metal layer is disposed between the bottom metal layer and the first magnetic layer.Type: ApplicationFiled: July 27, 2022Publication date: November 24, 2022Inventors: Wilman TSAI, Shy-Jay LIN, Mingyuan SONG
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Patent number: 11502241Abstract: A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a selector layer coupled to the first terminal.Type: GrantFiled: December 31, 2019Date of Patent: November 15, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: MingYuan Song, Shy-Jay Lin, William J. Gallagher, Hiroki Noguchi
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Publication number: 20220359613Abstract: A method includes depositing a first dielectric layer over a semiconductor substrate, depositing a first electrode layer over the first dielectric layer, etching the first electrode layer to form a first electrode and a second electrode laterally separated from the first electrode, depositing a Spin Orbit Torque (SOT) material on the first electrode and the second electrode, depositing Magnetic Tunnel Junction (MTJ) layers on the SOT material, depositing a second electrode layer on the MTJ layers, etching the SOT material to form a SOT layer extending from the first electrode to the second electrode, etching the MTJ layers to form an MTJ stack on the SOT layer, and etching the second electrode layer to form a top electrode on the MTJ stack.Type: ApplicationFiled: July 26, 2022Publication date: November 10, 2022Inventors: Shy-Jay Lin, MingYuan Song, Hiroki Noguchi
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Publication number: 20220359614Abstract: The disclosure is directed to spin-orbit torque (“SOT”) magnetoresistive random-access memory (“MRAM”) (“SOT-MRAM”) structures and methods. A new structure of the SOT channel has one or more magnetic insertion layers superposed or stacked with one or more heavy metal layer(s). Through proximity to a magnetic insertion layer, a surface portion of a heavy metal layer is magnetized to include a magnetization. The magnetization within the heavy metal layer enhances spin-dependent scattering, which leads to increased transverse spin imbalance.Type: ApplicationFiled: July 21, 2022Publication date: November 10, 2022Inventors: Shy-Jay Lin, Mingyuan Song
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Publication number: 20220328559Abstract: A method includes depositing a plurality of layers, which includes depositing a spin orbit coupling layer, depositing a dielectric layer over the spin orbit coupling layer, depositing a free layer over the dielectric layer, depositing a tunnel barrier layer over the free layer, and depositing a reference layer over the tunnel barrier layer. The method further includes performing a first patterning process to pattern the plurality of layers, and performing a second patterning process to pattern the reference layer, the tunnel barrier layer, the free layer, and the dielectric layer. The second patterning process stops on a top surface of the spin orbit coupling layer.Type: ApplicationFiled: June 30, 2022Publication date: October 13, 2022Inventors: Wilman Tsai, MingYuan Song, Shy-Jay Lin
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Patent number: 11469267Abstract: A method includes depositing a plurality of layers, which includes depositing a spin orbit coupling layer, depositing a dielectric layer over the spin orbit coupling layer, depositing a free layer over the dielectric layer, depositing a tunnel barrier layer over the free layer, and depositing a reference layer over the tunnel barrier layer. The method further includes performing a first patterning process to pattern the plurality of layers, and performing a second patterning process to pattern the reference layer, the tunnel barrier layer, the free layer, and the dielectric layer. The second patterning process stops on a top surface of the spin orbit coupling layer.Type: GrantFiled: March 2, 2020Date of Patent: October 11, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Wilman Tsai, MingYuan Song, Shy-Jay Lin
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Patent number: 11437434Abstract: A spin-orbit-torque (SOT) magnetic device includes a bottom metal layer, a first magnetic layer disposed over the bottom metal layer, a spacer layer disposed over the first magnetic layer, and a second magnetic layer disposed over the spacer layer. A diffusion barrier layer for suppressing metal elements of the first magnetic layer from diffusing into the bottom metal layer is disposed between the bottom metal layer and the first magnetic layer.Type: GrantFiled: December 28, 2020Date of Patent: September 6, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wilman Tsai, Shy-Jay Lin, Mingyuan Song
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Patent number: 11430832Abstract: A method includes depositing a first dielectric layer over a semiconductor substrate, depositing a first electrode layer over the first dielectric layer, etching the first electrode layer to form a first electrode and a second electrode laterally separated from the first electrode, depositing a Spin Orbit Torque (SOT) material on the first electrode and the second electrode, depositing Magnetic Tunnel Junction (MTJ) layers on the SOT material, depositing a second electrode layer on the MTJ layers, etching the SOT material to form a SOT layer extending from the first electrode to the second electrode, etching the MTJ layers to form an MTJ stack on the SOT layer, and etching the second electrode layer to form a top electrode on the MTJ stack.Type: GrantFiled: October 30, 2019Date of Patent: August 30, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shy-Jay Lin, MingYuan Song, Hiroki Noguchi
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Publication number: 20220223785Abstract: Semiconductor device includes pair of active devices, composite spin Hall electrode, and a magnetic tunnel junction. Composite spin Hall electrode is electrically connected to pair of active devices. Magnetic tunnel junction is disposed on opposite side of composite spin hall electrode with respect to pair of active devices. Spin Hall electrode includes pair of heavy metal layers, and spacer layer disposed in between pair of heavy metal layers. Pair of heavy metal layers is made of a heavy metal in a metastable state. Spacer layer comprises first material different from the pair of heavy metal layers.Type: ApplicationFiled: July 7, 2021Publication date: July 14, 2022Inventors: Chien-Min Lee, Shy-Jay Lin, Yen-Lin Huang, MingYuan Song, Tung Ying Lee
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Publication number: 20220216396Abstract: A memory device and a manufacturing method thereof are provided. The memory device includes a magnetic tunneling junction (MTJ) and a spin Hall electrode (SHE). The MTJ includes a free layer, a reference layer and a barrier layer lying between the free layer and the reference layer. The SHE is in contact with the MTJ, and configured to convert a charge current to a spin current for programming the MTJ. The SHE is formed of an alloy comprising at least one heavy metal element and at least one light transition metal element. The heavy metal element is selected from metal elements with one or more valence electrons filling in 5d orbitals, and the light transition metal element is selected from transition metal elements with one or more valence electrons partially filling in 3d orbitals.Type: ApplicationFiled: November 4, 2021Publication date: July 7, 2022Inventors: Yen-Lin Huang, MingYuan Song, Chien-Min Lee, Shy-Jay Lin, Chi-Feng Pai, Chen-Yu Hu, Chao-Chung Huang, Kuan-Hao Chen, Chia-Chin Tsai, Yu-Fang Chiu, Cheng-Wei Peng
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Publication number: 20220208244Abstract: A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a shared selector layer coupled to the first terminal.Type: ApplicationFiled: March 16, 2022Publication date: June 30, 2022Inventors: MingYuan Song, Shy-Jay Lin, Chien-Min Lee, William Joseph Gallagher
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Publication number: 20220158083Abstract: A spin-orbit-torque (SOT) magnetic device includes a bottom metal layer, a first magnetic layer, as a magnetic free layer, disposed over the bottom metal layer, a spacer layer disposed over the first magnetic layer, and a second magnetic layer disposed over the spacer layer. The first magnetic layer includes a lower magnetic layer, a middle layer made of non-magnetic layer and an upper magnetic layer.Type: ApplicationFiled: January 28, 2022Publication date: May 19, 2022Inventors: Shy-Jay LIN, Mingyuan SONG
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Patent number: 11302864Abstract: A device is provided that includes a semiconductor substrate on which a free magnetic element is positioned, which has first and second magnetic domains separated by a domain wall. A first magnet is positioned on the substrate near a first end of the free magnetic element, and has a first polarity and a first value of coercivity. A second magnet is positioned on the substrate near a second end of the free magnetic element, and has a second polarity, antiparallel relative to the first polarity, and a second value of coercivity different from the first value of coercivity.Type: GrantFiled: July 21, 2020Date of Patent: April 12, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Mingyuan Song, Chwen Yu, Shy-Jay Lin
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Patent number: 11289143Abstract: A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a shared selector layer coupled to the first terminal.Type: GrantFiled: August 25, 2020Date of Patent: March 29, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: MingYuan Song, Shy-Jay Lin, Chien-Min Lee, William Joseph Gallagher
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Patent number: 11239413Abstract: A spin-orbit-torque (SOT) magnetic device includes a bottom metal layer, a first magnetic layer, as a magnetic free layer, disposed over the bottom metal layer, a spacer layer disposed over the first magnetic layer, and a second magnetic layer disposed over the spacer layer. The first magnetic layer includes a lower magnetic layer, a middle layer made of non-magnetic layer and an upper magnetic layer.Type: GrantFiled: May 30, 2019Date of Patent: February 1, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shy-Jay Lin, Mingyuan Song
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Publication number: 20210408115Abstract: A device includes a substrate having a first side and a second side, a first transistor that includes a first gate over a first protrusion and a first source region and a first drain region interposing the first protrusion, a first buried contact disposed adjacent to the first protrusion and having at least a portion extending into the substrate, a first contact plug disposed over the first drain region, first conductive lines disposed over the first contact plug and electrically connecting to the first drain region by the first contact plug, first via penetrating through the substrate and connecting the first buried contact; and second conductive lines disposed over the second side of the substrate and electrically connecting to the first via. The first buried contact is electrically connecting to the first source region or the first gate.Type: ApplicationFiled: March 29, 2021Publication date: December 30, 2021Inventors: Shy-Jay Lin, Chien-Min Lee, Hiroki Noguchi, MingYuan Song, Yen-Lin Huang, William Joseph Gallagher
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Patent number: 11195991Abstract: A magnetic random access memory assisted non-volatile Hall effect device includes a spin orbit torque layer disposed over a substrate, and a magnetic layer disposed over the spin orbit torque layer. A metal oxide layer disposed over the magnetic layer. Portions of the spin orbit torque layer extend outward from the magnetic layer and the metal oxide layer on opposing sides of a first direction and opposing sides of a second direction in plan view, and the second direction is perpendicular to the first direction.Type: GrantFiled: September 25, 2019Date of Patent: December 7, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: MingYuan Song, Shy-Jay Lin
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Publication number: 20210359199Abstract: A magnetic memory device includes a spin-orbit torque (SOT) induction structure which may be strained and seedless and formed with a perpendicular magnetic anisotropy. A magnetic tunnel junction (MTJ) stack is disposed over the SOT induction structure. A spacer layer may decouple layers between the SOT induction structure and the MTJ stack or decouple layers within the MTJ stack. One end of the SOT induction structure may be coupled to a first transistor and another end of the SOT induction structure coupled to a second transistor.Type: ApplicationFiled: January 8, 2021Publication date: November 18, 2021Inventors: Shy-Jay Lin, Chien-Min Lee, MingYuan Song
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Publication number: 20210343933Abstract: The disclosure is directed to spin-orbit torque (“SOT”) magnetoresistive random-access memory (“MRAM”) (“SOT-MRAM”) structures and methods. A SOT channel of the SOT-MRAM includes multiple heavy metal layers and one or more dielectric dusting layers each sandwiched between two adjacent heavy metal layers. The dielectric dusting layers each include discrete molecules or discrete molecule clusters of a dielectric material scattered in or adjacent to an interface between two adjacent heavy metal layers.Type: ApplicationFiled: July 13, 2021Publication date: November 4, 2021Inventors: Shy-Jay LIN, Mingyuan SONG