Patents by Inventor Mingyuan SONG

Mingyuan SONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220384714
    Abstract: A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a selector layer coupled to the first terminal.
    Type: Application
    Filed: August 10, 2022
    Publication date: December 1, 2022
    Inventors: MingYuan SONG, Shy-Jay LIN, William J. GALLAGHER, Hiroki NOGUCHI
  • Publication number: 20220375993
    Abstract: A spin-orbit-torque (SOT) magnetic device includes a bottom metal layer, a first magnetic layer disposed over the bottom metal layer, a spacer layer disposed over the first magnetic layer, and a second magnetic layer disposed over the spacer layer. A diffusion barrier layer for suppressing metal elements of the first magnetic layer from diffusing into the bottom metal layer is disposed between the bottom metal layer and the first magnetic layer.
    Type: Application
    Filed: July 27, 2022
    Publication date: November 24, 2022
    Inventors: Wilman TSAI, Shy-Jay LIN, Mingyuan SONG
  • Patent number: 11502241
    Abstract: A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a selector layer coupled to the first terminal.
    Type: Grant
    Filed: December 31, 2019
    Date of Patent: November 15, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: MingYuan Song, Shy-Jay Lin, William J. Gallagher, Hiroki Noguchi
  • Publication number: 20220359613
    Abstract: A method includes depositing a first dielectric layer over a semiconductor substrate, depositing a first electrode layer over the first dielectric layer, etching the first electrode layer to form a first electrode and a second electrode laterally separated from the first electrode, depositing a Spin Orbit Torque (SOT) material on the first electrode and the second electrode, depositing Magnetic Tunnel Junction (MTJ) layers on the SOT material, depositing a second electrode layer on the MTJ layers, etching the SOT material to form a SOT layer extending from the first electrode to the second electrode, etching the MTJ layers to form an MTJ stack on the SOT layer, and etching the second electrode layer to form a top electrode on the MTJ stack.
    Type: Application
    Filed: July 26, 2022
    Publication date: November 10, 2022
    Inventors: Shy-Jay Lin, MingYuan Song, Hiroki Noguchi
  • Publication number: 20220359614
    Abstract: The disclosure is directed to spin-orbit torque (“SOT”) magnetoresistive random-access memory (“MRAM”) (“SOT-MRAM”) structures and methods. A new structure of the SOT channel has one or more magnetic insertion layers superposed or stacked with one or more heavy metal layer(s). Through proximity to a magnetic insertion layer, a surface portion of a heavy metal layer is magnetized to include a magnetization. The magnetization within the heavy metal layer enhances spin-dependent scattering, which leads to increased transverse spin imbalance.
    Type: Application
    Filed: July 21, 2022
    Publication date: November 10, 2022
    Inventors: Shy-Jay Lin, Mingyuan Song
  • Publication number: 20220328559
    Abstract: A method includes depositing a plurality of layers, which includes depositing a spin orbit coupling layer, depositing a dielectric layer over the spin orbit coupling layer, depositing a free layer over the dielectric layer, depositing a tunnel barrier layer over the free layer, and depositing a reference layer over the tunnel barrier layer. The method further includes performing a first patterning process to pattern the plurality of layers, and performing a second patterning process to pattern the reference layer, the tunnel barrier layer, the free layer, and the dielectric layer. The second patterning process stops on a top surface of the spin orbit coupling layer.
    Type: Application
    Filed: June 30, 2022
    Publication date: October 13, 2022
    Inventors: Wilman Tsai, MingYuan Song, Shy-Jay Lin
  • Patent number: 11469267
    Abstract: A method includes depositing a plurality of layers, which includes depositing a spin orbit coupling layer, depositing a dielectric layer over the spin orbit coupling layer, depositing a free layer over the dielectric layer, depositing a tunnel barrier layer over the free layer, and depositing a reference layer over the tunnel barrier layer. The method further includes performing a first patterning process to pattern the plurality of layers, and performing a second patterning process to pattern the reference layer, the tunnel barrier layer, the free layer, and the dielectric layer. The second patterning process stops on a top surface of the spin orbit coupling layer.
    Type: Grant
    Filed: March 2, 2020
    Date of Patent: October 11, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Wilman Tsai, MingYuan Song, Shy-Jay Lin
  • Patent number: 11437434
    Abstract: A spin-orbit-torque (SOT) magnetic device includes a bottom metal layer, a first magnetic layer disposed over the bottom metal layer, a spacer layer disposed over the first magnetic layer, and a second magnetic layer disposed over the spacer layer. A diffusion barrier layer for suppressing metal elements of the first magnetic layer from diffusing into the bottom metal layer is disposed between the bottom metal layer and the first magnetic layer.
    Type: Grant
    Filed: December 28, 2020
    Date of Patent: September 6, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wilman Tsai, Shy-Jay Lin, Mingyuan Song
  • Patent number: 11430832
    Abstract: A method includes depositing a first dielectric layer over a semiconductor substrate, depositing a first electrode layer over the first dielectric layer, etching the first electrode layer to form a first electrode and a second electrode laterally separated from the first electrode, depositing a Spin Orbit Torque (SOT) material on the first electrode and the second electrode, depositing Magnetic Tunnel Junction (MTJ) layers on the SOT material, depositing a second electrode layer on the MTJ layers, etching the SOT material to form a SOT layer extending from the first electrode to the second electrode, etching the MTJ layers to form an MTJ stack on the SOT layer, and etching the second electrode layer to form a top electrode on the MTJ stack.
    Type: Grant
    Filed: October 30, 2019
    Date of Patent: August 30, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shy-Jay Lin, MingYuan Song, Hiroki Noguchi
  • Publication number: 20220223785
    Abstract: Semiconductor device includes pair of active devices, composite spin Hall electrode, and a magnetic tunnel junction. Composite spin Hall electrode is electrically connected to pair of active devices. Magnetic tunnel junction is disposed on opposite side of composite spin hall electrode with respect to pair of active devices. Spin Hall electrode includes pair of heavy metal layers, and spacer layer disposed in between pair of heavy metal layers. Pair of heavy metal layers is made of a heavy metal in a metastable state. Spacer layer comprises first material different from the pair of heavy metal layers.
    Type: Application
    Filed: July 7, 2021
    Publication date: July 14, 2022
    Inventors: Chien-Min Lee, Shy-Jay Lin, Yen-Lin Huang, MingYuan Song, Tung Ying Lee
  • Publication number: 20220216396
    Abstract: A memory device and a manufacturing method thereof are provided. The memory device includes a magnetic tunneling junction (MTJ) and a spin Hall electrode (SHE). The MTJ includes a free layer, a reference layer and a barrier layer lying between the free layer and the reference layer. The SHE is in contact with the MTJ, and configured to convert a charge current to a spin current for programming the MTJ. The SHE is formed of an alloy comprising at least one heavy metal element and at least one light transition metal element. The heavy metal element is selected from metal elements with one or more valence electrons filling in 5d orbitals, and the light transition metal element is selected from transition metal elements with one or more valence electrons partially filling in 3d orbitals.
    Type: Application
    Filed: November 4, 2021
    Publication date: July 7, 2022
    Inventors: Yen-Lin Huang, MingYuan Song, Chien-Min Lee, Shy-Jay Lin, Chi-Feng Pai, Chen-Yu Hu, Chao-Chung Huang, Kuan-Hao Chen, Chia-Chin Tsai, Yu-Fang Chiu, Cheng-Wei Peng
  • Publication number: 20220208244
    Abstract: A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a shared selector layer coupled to the first terminal.
    Type: Application
    Filed: March 16, 2022
    Publication date: June 30, 2022
    Inventors: MingYuan Song, Shy-Jay Lin, Chien-Min Lee, William Joseph Gallagher
  • Publication number: 20220158083
    Abstract: A spin-orbit-torque (SOT) magnetic device includes a bottom metal layer, a first magnetic layer, as a magnetic free layer, disposed over the bottom metal layer, a spacer layer disposed over the first magnetic layer, and a second magnetic layer disposed over the spacer layer. The first magnetic layer includes a lower magnetic layer, a middle layer made of non-magnetic layer and an upper magnetic layer.
    Type: Application
    Filed: January 28, 2022
    Publication date: May 19, 2022
    Inventors: Shy-Jay LIN, Mingyuan SONG
  • Patent number: 11302864
    Abstract: A device is provided that includes a semiconductor substrate on which a free magnetic element is positioned, which has first and second magnetic domains separated by a domain wall. A first magnet is positioned on the substrate near a first end of the free magnetic element, and has a first polarity and a first value of coercivity. A second magnet is positioned on the substrate near a second end of the free magnetic element, and has a second polarity, antiparallel relative to the first polarity, and a second value of coercivity different from the first value of coercivity.
    Type: Grant
    Filed: July 21, 2020
    Date of Patent: April 12, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Mingyuan Song, Chwen Yu, Shy-Jay Lin
  • Patent number: 11289143
    Abstract: A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a shared selector layer coupled to the first terminal.
    Type: Grant
    Filed: August 25, 2020
    Date of Patent: March 29, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: MingYuan Song, Shy-Jay Lin, Chien-Min Lee, William Joseph Gallagher
  • Patent number: 11239413
    Abstract: A spin-orbit-torque (SOT) magnetic device includes a bottom metal layer, a first magnetic layer, as a magnetic free layer, disposed over the bottom metal layer, a spacer layer disposed over the first magnetic layer, and a second magnetic layer disposed over the spacer layer. The first magnetic layer includes a lower magnetic layer, a middle layer made of non-magnetic layer and an upper magnetic layer.
    Type: Grant
    Filed: May 30, 2019
    Date of Patent: February 1, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shy-Jay Lin, Mingyuan Song
  • Publication number: 20210408115
    Abstract: A device includes a substrate having a first side and a second side, a first transistor that includes a first gate over a first protrusion and a first source region and a first drain region interposing the first protrusion, a first buried contact disposed adjacent to the first protrusion and having at least a portion extending into the substrate, a first contact plug disposed over the first drain region, first conductive lines disposed over the first contact plug and electrically connecting to the first drain region by the first contact plug, first via penetrating through the substrate and connecting the first buried contact; and second conductive lines disposed over the second side of the substrate and electrically connecting to the first via. The first buried contact is electrically connecting to the first source region or the first gate.
    Type: Application
    Filed: March 29, 2021
    Publication date: December 30, 2021
    Inventors: Shy-Jay Lin, Chien-Min Lee, Hiroki Noguchi, MingYuan Song, Yen-Lin Huang, William Joseph Gallagher
  • Patent number: 11195991
    Abstract: A magnetic random access memory assisted non-volatile Hall effect device includes a spin orbit torque layer disposed over a substrate, and a magnetic layer disposed over the spin orbit torque layer. A metal oxide layer disposed over the magnetic layer. Portions of the spin orbit torque layer extend outward from the magnetic layer and the metal oxide layer on opposing sides of a first direction and opposing sides of a second direction in plan view, and the second direction is perpendicular to the first direction.
    Type: Grant
    Filed: September 25, 2019
    Date of Patent: December 7, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: MingYuan Song, Shy-Jay Lin
  • Publication number: 20210359199
    Abstract: A magnetic memory device includes a spin-orbit torque (SOT) induction structure which may be strained and seedless and formed with a perpendicular magnetic anisotropy. A magnetic tunnel junction (MTJ) stack is disposed over the SOT induction structure. A spacer layer may decouple layers between the SOT induction structure and the MTJ stack or decouple layers within the MTJ stack. One end of the SOT induction structure may be coupled to a first transistor and another end of the SOT induction structure coupled to a second transistor.
    Type: Application
    Filed: January 8, 2021
    Publication date: November 18, 2021
    Inventors: Shy-Jay Lin, Chien-Min Lee, MingYuan Song
  • Publication number: 20210343933
    Abstract: The disclosure is directed to spin-orbit torque (“SOT”) magnetoresistive random-access memory (“MRAM”) (“SOT-MRAM”) structures and methods. A SOT channel of the SOT-MRAM includes multiple heavy metal layers and one or more dielectric dusting layers each sandwiched between two adjacent heavy metal layers. The dielectric dusting layers each include discrete molecules or discrete molecule clusters of a dielectric material scattered in or adjacent to an interface between two adjacent heavy metal layers.
    Type: Application
    Filed: July 13, 2021
    Publication date: November 4, 2021
    Inventors: Shy-Jay LIN, Mingyuan SONG