Patents by Inventor Mingyuan SONG

Mingyuan SONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11107975
    Abstract: The disclosure is directed to spin-orbit torque (“SOT”) magnetoresistive random-access memory (“MRAM”) (“SOT-MRAM”) structures and methods. A SOT channel of the SOT-MRAM includes multiple heavy metal layers and one or more dielectric dusting layers each sandwiched between two adjacent heavy metal layers. The dielectric dusting layers each include discrete molecules or discrete molecule clusters of a dielectric material scattered in or adjacent to an interface between two adjacent heavy metal layers.
    Type: Grant
    Filed: June 3, 2019
    Date of Patent: August 31, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shy-Jay Lin, Mingyuan Song
  • Publication number: 20210202827
    Abstract: A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a selector layer coupled to the first terminal.
    Type: Application
    Filed: December 31, 2019
    Publication date: July 1, 2021
    Inventors: MingYuan SONG, Shy-Jay LIN, William J. GALLAGHER, Hiroki NOGUCHI
  • Publication number: 20210134882
    Abstract: A method includes depositing a first dielectric layer over a semiconductor substrate, depositing a first electrode layer over the first dielectric layer, etching the first electrode layer to form a first electrode and a second electrode laterally separated from the first electrode, depositing a Spin Orbit Torque (SOT) material on the first electrode and the second electrode, depositing Magnetic Tunnel Junction (MTJ) layers on the SOT material, depositing a second electrode layer on the MTJ layers, etching the SOT material to form a SOT layer extending from the first electrode to the second electrode, etching the MTJ layers to form an MTJ stack on the SOT layer, and etching the second electrode layer to form a top electrode on the MTJ stack.
    Type: Application
    Filed: October 30, 2019
    Publication date: May 6, 2021
    Inventors: Shy-Jay Lin, MingYuan Song, Hiroki Noguchi
  • Publication number: 20210134339
    Abstract: A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a shared selector layer coupled to the first terminal.
    Type: Application
    Filed: August 25, 2020
    Publication date: May 6, 2021
    Inventors: MingYuan Song, Shy-Jay Lin, Chien-Min Lee, William Joseph Gallagher
  • Publication number: 20210118952
    Abstract: A spin-orbit-torque (SOT) magnetic device includes a bottom metal layer, a first magnetic layer disposed over the bottom metal layer, a spacer layer disposed over the first magnetic layer, and a second magnetic layer disposed over the spacer layer. A diffusion barrier layer for suppressing metal elements of the first magnetic layer from diffusing into the bottom metal layer is disposed between the bottom metal layer and the first magnetic layer.
    Type: Application
    Filed: December 28, 2020
    Publication date: April 22, 2021
    Inventors: Wilman TSAI, Shy-Jay LIN, Mingyuan SONG
  • Patent number: 10879307
    Abstract: A spin-orbit-torque (SOT) magnetic device includes a bottom metal layer, a first magnetic layer disposed over the bottom metal layer, a spacer layer disposed over the first magnetic layer, and a second magnetic layer disposed over the spacer layer. A diffusion barrier layer for suppressing metal elements of the first magnetic layer from diffusing into the bottom metal layer is disposed between the bottom metal layer and the first magnetic layer.
    Type: Grant
    Filed: May 30, 2019
    Date of Patent: December 29, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wilman Tsai, Shy-Jay Lin, Mingyuan Song
  • Publication number: 20200365653
    Abstract: A method includes depositing a plurality of layers, which includes depositing a spin orbit coupling layer, depositing a dielectric layer over the spin orbit coupling layer, depositing a free layer over the dielectric layer, depositing a tunnel barrier layer over the free layer, and depositing a reference layer over the tunnel barrier layer. The method further includes performing a first patterning process to pattern the plurality of layers, and performing a second patterning process to pattern the reference layer, the tunnel barrier layer, the free layer, and the dielectric layer. The second patterning process stops on a top surface of the spin orbit coupling layer.
    Type: Application
    Filed: March 2, 2020
    Publication date: November 19, 2020
    Inventors: Wilman Tsai, MingYuan Song, Shy-Jay Lin
  • Publication number: 20200350487
    Abstract: A device is provided that includes a semiconductor substrate on which a free magnetic element is positioned, which has first and second magnetic domains separated by a domain wall. A first magnet is positioned on the substrate near a first end of the free magnetic element, and has a first polarity and a first value of coercivity. A second magnet is positioned on the substrate near a second end of the free magnetic element, and has a second polarity, antiparallel relative to the first polarity, and a second value of coercivity different from the first value of coercivity.
    Type: Application
    Filed: July 21, 2020
    Publication date: November 5, 2020
    Inventors: Mingyuan SONG, Chwen YU, Shy-Jay LIN
  • Publication number: 20200350488
    Abstract: A device is provided that includes a semiconductor substrate on which a free magnetic element is positioned, which has first and second magnetic domains separated by a domain wall. A first magnet is positioned on the substrate near a first end of the free magnetic element, and has a first polarity and a first value of coercivity. A second magnet is positioned on the substrate near a second end of the free magnetic element, and has a second polarity, antiparallel relative to the first polarity, and a second value of coercivity different from the first value of coercivity.
    Type: Application
    Filed: July 21, 2020
    Publication date: November 5, 2020
    Inventors: Mingyuan SONG, Chwen YU, Shy-Jay LIN
  • Patent number: 10756255
    Abstract: A device is provided that includes a semiconductor substrate on which a free magnetic element is positioned, which has first and second magnetic domains separated by a domain wall. A first magnet is positioned on the substrate near a first end of the free magnetic element, and has a first polarity and a first value of coercivity. A second magnet is positioned on the substrate near a second end of the free magnetic element, and has a second polarity, antiparallel relative to the first polarity, and a second value of coercivity different from the first value of coercivity.
    Type: Grant
    Filed: May 17, 2018
    Date of Patent: August 25, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Mingyuan Song, Chwen Yu, Shy-Jay Lin
  • Publication number: 20200136016
    Abstract: The disclosure is directed to spin-orbit torque (“SOT”) magnetoresistive random-access memory (“MRAM”) (“SOT-MRAM”) structures and methods. A SOT channel of the SOT-MRAM includes multiple heavy metal layers and one or more dielectric dusting layers each sandwiched between two adjacent heavy metal layers. The dielectric dusting layers each include discrete molecules or discrete molecule clusters of a dielectric material scattered in or adjacent to an interface between two adjacent heavy metal layers.
    Type: Application
    Filed: June 3, 2019
    Publication date: April 30, 2020
    Inventors: Shy-Jay LIN, Mingyuan SONG
  • Publication number: 20200136022
    Abstract: A spin-orbit-torque (SOT) magnetic device includes a bottom metal layer, a first magnetic layer, as a magnetic free layer, disposed over the bottom metal layer, a spacer layer disposed over the first magnetic layer, and a second magnetic layer disposed over the spacer layer. The first magnetic layer includes a lower magnetic layer, a middle layer made of non-magnetic layer and an upper magnetic layer.
    Type: Application
    Filed: May 30, 2019
    Publication date: April 30, 2020
    Inventors: Shy-Jay LIN, Mingyuan SONG
  • Publication number: 20200106002
    Abstract: A magnetic random access memory assisted non-volatile Hall effect device includes a spin orbit torque layer disposed over a substrate, and a magnetic layer disposed over the spin orbit torque layer. A metal oxide layer disposed over the magnetic layer. Portions of the spin orbit torque layer extend outward from the magnetic layer and the metal oxide layer on opposing sides of a first direction and opposing sides of a second direction in plan view, and the second direction is perpendicular to the first direction.
    Type: Application
    Filed: September 25, 2019
    Publication date: April 2, 2020
    Inventors: MingYuan SONG, Shy-Jay LIN
  • Publication number: 20200098407
    Abstract: A spin-orbit-torque (SOT) magnetic device includes a bottom metal layer, a first magnetic layer disposed over the bottom metal layer, a spacer layer disposed over the first magnetic layer, and a second magnetic layer disposed over the spacer layer. A diffusion barrier layer for suppressing metal elements of the first magnetic layer from diffusing into the bottom metal layer is disposed between the bottom metal layer and the first magnetic layer.
    Type: Application
    Filed: May 30, 2019
    Publication date: March 26, 2020
    Inventors: Wilman TSAI, Shy-Jay LIN, Mingyuan SONG
  • Publication number: 20200075670
    Abstract: The disclosure is directed to spin-orbit torque (“SOT”) magnetoresistive random-access memory (“MRAM”) (“SOT-MRAM”) structures and methods. A new structure of the SOT channel has one or more magnetic insertion layers superposed or stacked with one or more heavy metal layer(s). Through proximity to a magnetic insertion layer, a surface portion of a heavy metal layer is magnetized to include a magnetization. The magnetization within the heavy metal layer enhances spin-dependent scattering, which leads to increased transverse spin imbalance.
    Type: Application
    Filed: June 11, 2019
    Publication date: March 5, 2020
    Inventors: Shy-Jay Lin, Mingyuan Song
  • Publication number: 20190355895
    Abstract: A device is provided that includes a semiconductor substrate on which a free magnetic element is positioned, which has first and second magnetic domains separated by a domain wall. A first magnet is positioned on the substrate near a first end of the free magnetic element, and has a first polarity and a first value of coercivity. A second magnet is positioned on the substrate near a second end of the free magnetic element, and has a second polarity, antiparallel relative to the first polarity, and a second value of coercivity different from the first value of coercivity.
    Type: Application
    Filed: May 17, 2018
    Publication date: November 21, 2019
    Inventors: Mingyuan SONG, Chwen YU, Shy-Jay LIN