Abstract: The present disclosure relates to a method of manufacturing a field effect transistor array by direct carbon nanotube printing and a field effect transistor array manufactured by the same. In addition, the method of manufacturing a field effect transistor array according to the present disclosure can implement deposition by adjusting a concentration of carbon nanotubes at a desired location on a substrate without limiting the substrate and very easily control a location by printing carbon nanotubes at an electrode gap location, and since the carbon nanotubes do not contact oxides of the substrate, lower noise to implement excellent sensitivity. In addition, the method of manufacturing a field effect transistor array according to the present disclosure can significantly reduce manufacturing costs and processing time by printing carbon nanotubes at a desired location without additional processes, and can be applied to various devices through a low-temperature process.