Patents by Inventor Mirai ISHIDA

Mirai ISHIDA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • DIELECTRIC THIN FILM, DIELECTRIC THIN FILM ELEMENT, PIEZOELECTRIC ACTUATOR, PIEZOELECTRIC SENSOR, HEAD ASSEMBLY, HEAD STACK ASSEMBLY, HARD DISK DRIVE, PRINTER HEAD AND INKJET PRINTER DEVICE
    Publication number: 20220059753
    Abstract: Provided is a dielectric thin film including a metal oxide. The metal oxide includes bismuth, sodium, barium, and titanium, at least a part of the metal oxide is a tetragonal crystal having a perovskite structure, and a (100) plane of at least a part of the tetragonal crystal is oriented in a normal direction do of a surface of the dielectric thin film 3.
    Type: Application
    Filed: September 11, 2019
    Publication date: February 24, 2022
    Applicants: TDK Corporation, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Yusuke SATO, Mirai ISHIDA, Wakiko SATO, Hiroshi FUNAKUBO, Takao SHIMIZU, Miyu HASEGAWA, Keisuke ISHIHAMA
  • Piezoelectric composition and piezoelectric element
    Patent number: 11005028
    Abstract: A piezoelectric composition including copper, germanium and a complex oxide represented by a compositional formula KmNbO3 and having a perovskite structure, in which m in the compositional formula satisfies 0.970?m?0.999, and with respect to 1 mol of the complex oxide, x mol % of copper in terms of a copper element and y mol % of germanium in terms of a germanium element are contained, wherein x satisfies 0.100?x?1.000 and y satisfies 0.000<y?1.500.
    Type: Grant
    Filed: March 19, 2019
    Date of Patent: May 11, 2021
    Assignee: TDK CORPORATION
    Inventors: Hiroki Katoh, Yuiko Hirose, Masakazu Hirose, Mirai Ishida
  • DIELECTRIC FILM, DIELECTRIC THIN FILM, ELECTRONIC COMPONENT, THIN FILM CAPACITOR, AND ELECTRONIC CIRCUIT BOARD
    Publication number: 20200312553
    Abstract: A dielectric film, contains: (1) Bi and Ti; (2) at least one element E1 selected from the group consisting of Na and K; and (3) at least one element E2 selected from the group consisting of Ba, Sr, and Ca. The dielectric film has a main phase containing an oxide that contains Bi, Ti, the element E1, and the element E2 and has a perovskite structure, and a subphase that contains Bi and has an oxygen concentration lower than that of the main phase. In a sectional surface of the dielectric film, a ratio RS of an area of the subphase to a sum of an area of the main phase and the area of the subphase is greater than or equal to 0.03 and less than or equal to 0.3.
    Type: Application
    Filed: March 19, 2020
    Publication date: October 1, 2020
    Applicant: TDK Corporation
    Inventors: Shirou OOTSUKI, Aiko TAKAHASHI, Yasunori HARADA, Shota SUZUKI, Yasunaga KAGAYA, Tomohiko KATO, Mirai ISHIDA
  • PIEZOELECTRIC COMPOSITION AND PIEZOELECTRIC ELEMENT
    Publication number: 20190288181
    Abstract: A piezoelectric composition including copper, germanium and a complex oxide represented by a compositional formula KmNbO3 and having a perovskite structure, in which m in the compositional formula satisfies 0.970? m?0.999, and with respect to 1 mol of the complex oxide, x mol % of copper in terms of a copper element and y mol % of germanium in terms of a germanium element are contained, wherein x satisfies 0.100 ?x?1.000 and y satisfies 0.000<y?1.500.
    Type: Application
    Filed: March 19, 2019
    Publication date: September 19, 2019
    Applicant: TDK CORPORATION
    Inventors: Hiroki KATOH, Yuiko HIROSE, Masakazu HIROSE, Mirai ISHIDA