Patents by Inventor Mircea Dusa
Mircea Dusa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11525786Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.Type: GrantFiled: March 4, 2021Date of Patent: December 13, 2022Assignee: ASML Netherlands B.V.Inventors: Arie Jeffrey Den Boef, Arno Jan Bleeker, Youri Johannes Laurentius Maria Van Dommelen, Mircea Dusa, Antoine Gaston Marie Kiers, Paul Frank Luehrmann, Henricus Petrus Maria Pellemans, Maurits Van Der Schaar, Cédric Désiré Grouwstra, Markus Gerardus Martinus Maria Van Kraaij
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Publication number: 20210208083Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.Type: ApplicationFiled: March 4, 2021Publication date: July 8, 2021Applicant: ASML Netherlands B.V.Inventors: Arie Jeffrey DEN BOEF, Amo Jan BLEEKER, Youri Johannes VAN DOMMELEN, Mircea DUSA, Antoine Gaston Marie KIERS, Paul Frank LUEHRMANN, Henricus Petrus Maria PELLEMANS, Maurits VAN DER SCHAAR, Cédric Désiré GROUWSTRA, Markus Geradus Maritinus VAN KRAAIJ
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Patent number: 10955353Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.Type: GrantFiled: February 7, 2019Date of Patent: March 23, 2021Assignee: ASML Netherlands B.V.Inventors: Arie Jeffrey Den Boef, Arno Jan Bleeker, Youri Johannes Laurentius Maria Van Dommelen, Mircea Dusa, Antoine Gaston Marie Kiers, Paul Frank Luehrmann, Henricus Petrus Maria Pellemans, Maurits Van Der Schaar, Cedric Desire Grouwstra, Markus Gerardus Martinus Maria Van Kraaij
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Patent number: 10656536Abstract: A substrate support, includes: a substrate support location configured to support a substrate, and a vacuum clamping device configured to clamp the substrate on the substrate support location, wherein the vacuum clamping device includes at least one reduced pressure source to create a reduced pressure, at least one vacuum section connected to the at least one reduced pressure source, wherein the at least one vacuum section is configured to attract the substrate towards the substrate support location, and a control device configured to control a spatial pressure profile along the at least one vacuum section with which the substrate is attracted by the vacuum clamping device, wherein the control device includes a substrate shape data input to receive substrate shape data representing shape data of the substrate to be clamped, and wherein the control device is configured to adapt the spatial pressure profile in dependency of the substrate shape data.Type: GrantFiled: April 23, 2015Date of Patent: May 19, 2020Assignee: ASML Netherlands B.V.Inventors: Martinus Hendrikus Antonius Leenders, Niek Elout De Kruijf, Mircea Dusa, Martijn Houben, Johannes Gerardus Maria Mulder, Thomas Poiesz, Marco Adrianus Peter Van Den Heuvel, Paul Van Dongen, Justin Johannes Hermanus Gerritzen, Antonie Hendrik Verweij, Abraham Alexander Soethoudt
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Publication number: 20190170657Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.Type: ApplicationFiled: February 7, 2019Publication date: June 6, 2019Applicant: ASML Netherlands B.V.Inventors: Arie Jeffrey Maria DEN BOEF, Arno Jan BLEEKER, Youri Johannes Laurentiu VAN DOMMELEN, Mircea DUSA, Antoine Gaston Marie KIERS, Paul Frank LUEHRMANN, Henricus Petrus Maria PELLEMANS, Maurits VAN DER SCHAAR, Cedric Desire GROUWSTRA, Markus Gerardus Martinus VAN KRAAIJ
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Patent number: 10241055Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.Type: GrantFiled: April 29, 2014Date of Patent: March 26, 2019Assignee: ASML Netherlands B.V.Inventors: Arie Jeffrey Maria Den Boef, Arno Jan Bleeker, Youri Johannes Laurentius Maria Van Dommelen, Mircea Dusa, Antoine Gaston Marie Kiers, Paul Frank Luehrmann, Henricus Petrus Maria Pellemans, Maurits Van Der Schaar, Cedric Desire Grouwstra, Markus Gerardus Martinus Van Kraaij
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Publication number: 20170192359Abstract: A substrate support, includes: a substrate support location configured to support a substrate, and a vacuum clamping device configured to clamp the substrate on the substrate support location, wherein the vacuum clamping device includes at least one reduced pressure source to create a reduced pressure, at least one vacuum section connected to the at least one reduced pressure source, wherein the at least one vacuum section is configured to attract the substrate towards the substrate support location, and a control device configured to control a spatial pressure profile along the at least one vacuum section with which the substrate is attracted by the vacuum clamping device, wherein the control device includes a substrate shape data input to receive substrate shape data representing shape data of the substrate to be clamped, and wherein the control device is configured to adapt the spatial pressure profile in dependency of the substrate shape data.Type: ApplicationFiled: April 23, 2015Publication date: July 6, 2017Applicants: ASML Netherlands B.V., ASML Holding N.V.Inventors: Martinus Hendrikus Antonius LEENDERS, Niek Elout DE KRUIJF, Mircea DUSA, Martijn HOUBEN, Johannes Gerardus Maria MULDER, Thomas POIESZ, Marco Adrianus Peter VAN DEN HEUVEL, Paul VAN DONGEN, Justin Johannes Hermanus GERRITZEN, Antonie Hendrik VER WEIJ, Abraham Alexander SOETHOUDT
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Patent number: 9368366Abstract: A method of forming a plurality of regularly spaced lithography features, the method including providing a self-assemblable block copolymer having first and second blocks in a plurality of trenches on a substrate, each trench including opposing side-walls and a base, with the side-walls having a width therebetween, wherein a first trench has a greater width than a second trench; causing the self-assemblable block copolymer to self-assemble into an ordered layer in each trench, the layer having a first domain of the first block alternating with a second domain of the second block, wherein the first and second trenches have the same number of each respective domain; and selectively removing the first domain to form regularly spaced rows of lithography features having the second domain along each trench, wherein the pitch of the features in the first trench is greater than the pitch of the features in the second trench.Type: GrantFiled: January 24, 2014Date of Patent: June 14, 2016Assignee: ASML NETHERLANDS B.V.Inventors: Sander Frederik Wuister, Tamara Druzhinina, Mircea Dusa
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Publication number: 20150364335Abstract: A method of forming a plurality of regularly spaced lithography features, the method including providing a self-assemblable block copolymer having first and second blocks in a plurality of trenches on a substrate, each trench including opposing side-walls and a base, with the side-walls having a width therebetween, wherein a first trench has a greater width than a second trench; causing the self-assemblable block copolymer to self-assemble into an ordered layer in each trench, the layer having a first domain of the first block alternating with a second domain of the second block, wherein the first and second trenches have the same number of each respective domain; and selectively removing the first domain to form regularly spaced rows of lithography features having the second domain along each trench, wherein the pitch of the features in the first trench is greater than the pitch of the features in the second trench.Type: ApplicationFiled: January 24, 2014Publication date: December 17, 2015Applicant: ASML Netherlands B.V.Inventors: Sander Frederik WUISTER, Tamara DRUZHININA, Mircea DUSA
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Patent number: 8980724Abstract: A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The dye may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).Type: GrantFiled: March 10, 2014Date of Patent: March 17, 2015Assignees: ASML Holding N.V., ASML Netherlands B.V.Inventors: Harry Sewell, Mircea Dusa, Richard Johannes Franciscus Van Haren, Manfred Gawein Tenner, Maya Angelova Doytcheva
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Patent number: 8945800Abstract: In a multiple patterning techniques, where two or more exposures are used to form a single layer of a device, the splitting of features in a single layer between the multiple exposures is carried out additionally with reference to features of another associated layer and the splitting of that layer into two or more sets of features for separate exposure. The multiple exposure process can be a process involving repeated litho-etch steps desirably, the alignment scheme utilized during exposure of the split layers is optimized with reference to the splitting approach.Type: GrantFiled: August 12, 2013Date of Patent: February 3, 2015Assignee: ASML Netherlands B.V.Inventors: Tsann-Bim Chiou, Mircea Dusa, Alek Chi-Heng Chen
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Publication number: 20140233025Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.Type: ApplicationFiled: April 29, 2014Publication date: August 21, 2014Applicant: ASML Netherlands B.V.Inventors: Arie Jeffrey Maria DEN BOEF, Arno Jan BLEEKER, Youri Johannes Laurentius Maria VAN DOMMELEN, Mircea DUSA, Antoine Gaston Marie KIERS, Paul Frank LUEHRMANN, Henricus Petrus Maria PELLEMANS, Maurits VAN DER SCHAAR, Cedric Desire GROUWSTRA, Markus Gerardus Martinus VAN KRAAIJ
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Publication number: 20140192333Abstract: A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The dye may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).Type: ApplicationFiled: March 10, 2014Publication date: July 10, 2014Applicants: ASML Netherlands B.V., ASML Holding N.VInventors: Harry SEWELL, Mircea Dusa, Richard Johannes Franciscus Van Haren, Manfred Gawein Tenner, Maya Angelova Doytcheva
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Patent number: 8760662Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.Type: GrantFiled: August 27, 2013Date of Patent: June 24, 2014Assignee: ASML Netherlands B.V.Inventors: Arie Jeffrey Den Boef, Arno Jan Bleeker, Youri Johannes Laurentius Maria Van Dommelen, Mircea Dusa, Antoine Gaston Marie Kiers, Paul Frank Luehrmann, Henricus Petrus Maria Pellemans, Maurits Van Der Schaar, Cédric Désiré Grouwstra, Markus Gerardus Martinus Maria Van Kraaij
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Patent number: 8709908Abstract: A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The dye may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).Type: GrantFiled: March 16, 2010Date of Patent: April 29, 2014Assignees: ASML Holding N.V., ASML Netherlands B.V.Inventors: Harry Sewell, Mircea Dusa, Richard Johannes Franciscus Van Haren, Manfred Gawein Tenner, Maya Angelova Doytcheva
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Publication number: 20140055788Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.Type: ApplicationFiled: August 27, 2013Publication date: February 27, 2014Applicant: ASML Netherlands B.V.Inventors: Arie Jeffrey Maria DEN BOEF, Arno Jan Bleeker, Youri Johannes Laurentius Maria Van Dommelen, Mircea Dusa, Antoine Gaston Marie Kiers, Paul Frank Luehrmann, Henricus Petrus Maria Pellemans, Maurits Van Der Schaar, Cedric Desire Grouwstra, Markus Gerardus Martinus Van Kraaij
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Publication number: 20140051016Abstract: In a multiple patterning techniques, where two or more exposures are used to form a single layer of a device, the splitting of features in a single layer between the multiple exposures is carried out additionally with reference to features of another associated layer and the splitting of that layer into two or more sets of features for separate exposure. The multiple exposure process can be a process involving repeated litho-etch steps desirably, the alignment scheme utilized during exposure of the split layers is optimized with reference to the splitting approach.Type: ApplicationFiled: August 12, 2013Publication date: February 20, 2014Applicant: ASML NETHERLANDS B.V.Inventors: Tsann-Bim CHIOU, Mircea DUSA, Alek Chi-Heng CHEN
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Patent number: 8625096Abstract: A semiconductor wafer is aligned using a double patterning process. A first resist layer having a first optical characteristic is deposited and foams at least one alignment mark. The first resist layer is developed. A second resist layer having a second optical characteristic is deposited over the first resist layer. The combination of first and second resist layers and alignment mark has a characteristic such that radiation of a pre-determined wavelength incident on the alignment mark produces a first or higher order diffraction as a function of the first and second optical characteristics.Type: GrantFiled: March 24, 2010Date of Patent: January 7, 2014Assignees: ASML Holding N.V., ASML Netherlands B.V.Inventors: Harry Sewell, Mircea Dusa, Richard Johannes Franciscus Van Haren, Manfred Gawein Tenner, Maya Angelova Doytcheva
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Patent number: 8612045Abstract: Variables in each step in a double patterning lithographic process are recorded and characteristics of intermediate features in a double patterning process measured. The final feature is then modeled, and the values of the variables optimized.Type: GrantFiled: December 8, 2009Date of Patent: December 17, 2013Assignees: ASML Holding N.V., ASML Netherlands B.V.Inventors: Everhardus Cornelis Mos, Mircea Dusa, Jozef Maria Finders, Christianus Gerardus Maria De Mol, Scott Anderson Middlebrooks, Dongzi Wangli
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Patent number: 8553230Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.Type: GrantFiled: September 30, 2011Date of Patent: October 8, 2013Assignee: ASML Netherlands B.V.Inventors: Arie Jeffrey Maria Den Boef, Arno Jan Bleeker, Youri Johannes Laurentius Maria Van Dommelen, Mircea Dusa, Antoine Gaston Marie Kiers, Paul Frank Luehrmann, Henricus Petrus Maria Pellemans, Maurits Van Der Schaar, Cedric Desire Grouwstra, Markus Gerardus Martinus Van Kraaij