Patents by Inventor Mircea Dusa

Mircea Dusa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190170657
    Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.
    Type: Application
    Filed: February 7, 2019
    Publication date: June 6, 2019
    Applicant: ASML Netherlands B.V.
    Inventors: Arie Jeffrey Maria DEN BOEF, Arno Jan BLEEKER, Youri Johannes Laurentiu VAN DOMMELEN, Mircea DUSA, Antoine Gaston Marie KIERS, Paul Frank LUEHRMANN, Henricus Petrus Maria PELLEMANS, Maurits VAN DER SCHAAR, Cedric Desire GROUWSTRA, Markus Gerardus Martinus VAN KRAAIJ
  • Patent number: 10241055
    Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.
    Type: Grant
    Filed: April 29, 2014
    Date of Patent: March 26, 2019
    Assignee: ASML Netherlands B.V.
    Inventors: Arie Jeffrey Maria Den Boef, Arno Jan Bleeker, Youri Johannes Laurentius Maria Van Dommelen, Mircea Dusa, Antoine Gaston Marie Kiers, Paul Frank Luehrmann, Henricus Petrus Maria Pellemans, Maurits Van Der Schaar, Cedric Desire Grouwstra, Markus Gerardus Martinus Van Kraaij
  • Publication number: 20170192359
    Abstract: A substrate support, includes: a substrate support location configured to support a substrate, and a vacuum clamping device configured to clamp the substrate on the substrate support location, wherein the vacuum clamping device includes at least one reduced pressure source to create a reduced pressure, at least one vacuum section connected to the at least one reduced pressure source, wherein the at least one vacuum section is configured to attract the substrate towards the substrate support location, and a control device configured to control a spatial pressure profile along the at least one vacuum section with which the substrate is attracted by the vacuum clamping device, wherein the control device includes a substrate shape data input to receive substrate shape data representing shape data of the substrate to be clamped, and wherein the control device is configured to adapt the spatial pressure profile in dependency of the substrate shape data.
    Type: Application
    Filed: April 23, 2015
    Publication date: July 6, 2017
    Applicants: ASML Netherlands B.V., ASML Holding N.V.
    Inventors: Martinus Hendrikus Antonius LEENDERS, Niek Elout DE KRUIJF, Mircea DUSA, Martijn HOUBEN, Johannes Gerardus Maria MULDER, Thomas POIESZ, Marco Adrianus Peter VAN DEN HEUVEL, Paul VAN DONGEN, Justin Johannes Hermanus GERRITZEN, Antonie Hendrik VER WEIJ, Abraham Alexander SOETHOUDT
  • Patent number: 9368366
    Abstract: A method of forming a plurality of regularly spaced lithography features, the method including providing a self-assemblable block copolymer having first and second blocks in a plurality of trenches on a substrate, each trench including opposing side-walls and a base, with the side-walls having a width therebetween, wherein a first trench has a greater width than a second trench; causing the self-assemblable block copolymer to self-assemble into an ordered layer in each trench, the layer having a first domain of the first block alternating with a second domain of the second block, wherein the first and second trenches have the same number of each respective domain; and selectively removing the first domain to form regularly spaced rows of lithography features having the second domain along each trench, wherein the pitch of the features in the first trench is greater than the pitch of the features in the second trench.
    Type: Grant
    Filed: January 24, 2014
    Date of Patent: June 14, 2016
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Sander Frederik Wuister, Tamara Druzhinina, Mircea Dusa
  • Publication number: 20150364335
    Abstract: A method of forming a plurality of regularly spaced lithography features, the method including providing a self-assemblable block copolymer having first and second blocks in a plurality of trenches on a substrate, each trench including opposing side-walls and a base, with the side-walls having a width therebetween, wherein a first trench has a greater width than a second trench; causing the self-assemblable block copolymer to self-assemble into an ordered layer in each trench, the layer having a first domain of the first block alternating with a second domain of the second block, wherein the first and second trenches have the same number of each respective domain; and selectively removing the first domain to form regularly spaced rows of lithography features having the second domain along each trench, wherein the pitch of the features in the first trench is greater than the pitch of the features in the second trench.
    Type: Application
    Filed: January 24, 2014
    Publication date: December 17, 2015
    Applicant: ASML Netherlands B.V.
    Inventors: Sander Frederik WUISTER, Tamara DRUZHININA, Mircea DUSA
  • Patent number: 8980724
    Abstract: A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The dye may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).
    Type: Grant
    Filed: March 10, 2014
    Date of Patent: March 17, 2015
    Assignees: ASML Holding N.V., ASML Netherlands B.V.
    Inventors: Harry Sewell, Mircea Dusa, Richard Johannes Franciscus Van Haren, Manfred Gawein Tenner, Maya Angelova Doytcheva
  • Patent number: 8945800
    Abstract: In a multiple patterning techniques, where two or more exposures are used to form a single layer of a device, the splitting of features in a single layer between the multiple exposures is carried out additionally with reference to features of another associated layer and the splitting of that layer into two or more sets of features for separate exposure. The multiple exposure process can be a process involving repeated litho-etch steps desirably, the alignment scheme utilized during exposure of the split layers is optimized with reference to the splitting approach.
    Type: Grant
    Filed: August 12, 2013
    Date of Patent: February 3, 2015
    Assignee: ASML Netherlands B.V.
    Inventors: Tsann-Bim Chiou, Mircea Dusa, Alek Chi-Heng Chen
  • Publication number: 20140233025
    Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.
    Type: Application
    Filed: April 29, 2014
    Publication date: August 21, 2014
    Applicant: ASML Netherlands B.V.
    Inventors: Arie Jeffrey Maria DEN BOEF, Arno Jan BLEEKER, Youri Johannes Laurentius Maria VAN DOMMELEN, Mircea DUSA, Antoine Gaston Marie KIERS, Paul Frank LUEHRMANN, Henricus Petrus Maria PELLEMANS, Maurits VAN DER SCHAAR, Cedric Desire GROUWSTRA, Markus Gerardus Martinus VAN KRAAIJ
  • Publication number: 20140192333
    Abstract: A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The dye may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).
    Type: Application
    Filed: March 10, 2014
    Publication date: July 10, 2014
    Applicants: ASML Netherlands B.V., ASML Holding N.V
    Inventors: Harry SEWELL, Mircea Dusa, Richard Johannes Franciscus Van Haren, Manfred Gawein Tenner, Maya Angelova Doytcheva
  • Patent number: 8760662
    Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.
    Type: Grant
    Filed: August 27, 2013
    Date of Patent: June 24, 2014
    Assignee: ASML Netherlands B.V.
    Inventors: Arie Jeffrey Den Boef, Arno Jan Bleeker, Youri Johannes Laurentius Maria Van Dommelen, Mircea Dusa, Antoine Gaston Marie Kiers, Paul Frank Luehrmann, Henricus Petrus Maria Pellemans, Maurits Van Der Schaar, Cédric Désiré Grouwstra, Markus Gerardus Martinus Maria Van Kraaij
  • Patent number: 8709908
    Abstract: A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The dye may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).
    Type: Grant
    Filed: March 16, 2010
    Date of Patent: April 29, 2014
    Assignees: ASML Holding N.V., ASML Netherlands B.V.
    Inventors: Harry Sewell, Mircea Dusa, Richard Johannes Franciscus Van Haren, Manfred Gawein Tenner, Maya Angelova Doytcheva
  • Publication number: 20140055788
    Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.
    Type: Application
    Filed: August 27, 2013
    Publication date: February 27, 2014
    Applicant: ASML Netherlands B.V.
    Inventors: Arie Jeffrey Maria DEN BOEF, Arno Jan Bleeker, Youri Johannes Laurentius Maria Van Dommelen, Mircea Dusa, Antoine Gaston Marie Kiers, Paul Frank Luehrmann, Henricus Petrus Maria Pellemans, Maurits Van Der Schaar, Cedric Desire Grouwstra, Markus Gerardus Martinus Van Kraaij
  • Publication number: 20140051016
    Abstract: In a multiple patterning techniques, where two or more exposures are used to form a single layer of a device, the splitting of features in a single layer between the multiple exposures is carried out additionally with reference to features of another associated layer and the splitting of that layer into two or more sets of features for separate exposure. The multiple exposure process can be a process involving repeated litho-etch steps desirably, the alignment scheme utilized during exposure of the split layers is optimized with reference to the splitting approach.
    Type: Application
    Filed: August 12, 2013
    Publication date: February 20, 2014
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Tsann-Bim CHIOU, Mircea DUSA, Alek Chi-Heng CHEN
  • Patent number: 8625096
    Abstract: A semiconductor wafer is aligned using a double patterning process. A first resist layer having a first optical characteristic is deposited and foams at least one alignment mark. The first resist layer is developed. A second resist layer having a second optical characteristic is deposited over the first resist layer. The combination of first and second resist layers and alignment mark has a characteristic such that radiation of a pre-determined wavelength incident on the alignment mark produces a first or higher order diffraction as a function of the first and second optical characteristics.
    Type: Grant
    Filed: March 24, 2010
    Date of Patent: January 7, 2014
    Assignees: ASML Holding N.V., ASML Netherlands B.V.
    Inventors: Harry Sewell, Mircea Dusa, Richard Johannes Franciscus Van Haren, Manfred Gawein Tenner, Maya Angelova Doytcheva
  • Patent number: 8612045
    Abstract: Variables in each step in a double patterning lithographic process are recorded and characteristics of intermediate features in a double patterning process measured. The final feature is then modeled, and the values of the variables optimized.
    Type: Grant
    Filed: December 8, 2009
    Date of Patent: December 17, 2013
    Assignees: ASML Holding N.V., ASML Netherlands B.V.
    Inventors: Everhardus Cornelis Mos, Mircea Dusa, Jozef Maria Finders, Christianus Gerardus Maria De Mol, Scott Anderson Middlebrooks, Dongzi Wangli
  • Patent number: 8553230
    Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.
    Type: Grant
    Filed: September 30, 2011
    Date of Patent: October 8, 2013
    Assignee: ASML Netherlands B.V.
    Inventors: Arie Jeffrey Maria Den Boef, Arno Jan Bleeker, Youri Johannes Laurentius Maria Van Dommelen, Mircea Dusa, Antoine Gaston Marie Kiers, Paul Frank Luehrmann, Henricus Petrus Maria Pellemans, Maurits Van Der Schaar, Cedric Desire Grouwstra, Markus Gerardus Martinus Van Kraaij
  • Publication number: 20130017378
    Abstract: A method is described for alignment of a substrate during a double patterning process. A first resist layer containing at least one alignment mark is formed on the substrate. After the first resist layer is developed, a second resist layer is deposited over the first resist layer, leaving a planar top surface (i.e., without topography). By baking the second resist layer appropriately, a symmetric alignment mark is formed in the second resist layer with little or no offset error from the alignment mark in the first resist layer. The symmetry of the alignment mark formed in the second resist can be enhanced by appropriate adjustments of the respective thicknesses of the first and second resist layers, the coating process parameters, and the baking process parameters.
    Type: Application
    Filed: September 14, 2012
    Publication date: January 17, 2013
    Applicant: ASML Netherlands B.V.
    Inventors: Maya Angelova Doytcheva, Mircea Dusa, Richard Johannes Franciscus Van Haren, Harry Sewell, Robertus Wilhelmus Van Der Heijden
  • Patent number: 8329366
    Abstract: A method is described for alignment of a substrate during a double patterning process. A first resist layer containing at least one alignment mark is formed on the substrate. After the first resist layer is developed, a second resist layer is deposited over the first resist layer, leaving a planar top surface (i.e., without topography). By baking the second resist layer appropriately, a symmetric alignment mark is formed in the second resist layer with little or no offset error from the alignment mark in the first resist layer. The symmetry of the alignment mark formed in the second resist can be enhanced by appropriate adjustments of the respective thicknesses of the first and second resist layers, the coating process parameters, and the baking process parameters.
    Type: Grant
    Filed: April 27, 2010
    Date of Patent: December 11, 2012
    Assignees: ASML Netherlands B.V., ASML Holding N.V.
    Inventors: Maya Angelova Doytcheva, Mircea Dusa, Richard Johannes Franciscus Van Haren, Harry Sewell, Robertus Wilhelmus Van Der Heijden
  • Patent number: 8189195
    Abstract: A method of measuring a property of a substrate includes generating a patterned mask configured to cause a radiation beam passing through the mask to acquire the pattern, simulating radiating the substrate with a patterned radiation beam that has been patterned using the mask to obtain a simulated pattern, determining at least one location of the simulated pattern that is prone to patterning errors, and irradiating the substrate with the patterned radiation beam using a lithographic process. The method also includes measuring an accuracy of at least one property of the at least one location of the pattern on the substrate that has been determined as being prone to patterning errors, and adjusting the lithographic process according to the measuring.
    Type: Grant
    Filed: May 9, 2007
    Date of Patent: May 29, 2012
    Assignee: ASML Netherlands B.V.
    Inventors: Arie Jeffrey Den Boef, Hugo Augustinus Joseph Cramer, Mircea Dusa, Irwan Dani Setija
  • Publication number: 20120038929
    Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.
    Type: Application
    Filed: September 30, 2011
    Publication date: February 16, 2012
    Applicant: ASML Netherlands B.V.
    Inventors: Arie Jeffrey Maria Den Boef, Arno Jan Bleeker, Youri Johannes Laurentius Maria Van Dommelen, Mircea Dusa, Antoine Gaston Marie Kiers, Paul Frank Luehrmann, Henricus Petrus Maria Pellemans, Maurits Van Der Schaar, Cedric Desire Grouwstra, Markus Gerardus Martinus Van Kraaij