Abstract: A calculation device receives input of a plurality of pieces of training data including a communication destination known to be malignant as data. The calculation device generates a model that calculates a malignant degree of an input communication destination from each piece of the training data. The calculation device gives weight to each of the models, and generates a mixed model using the model and the weight. The calculation device calculates a malignant degree of a communication destination unknown whether the communication destination is malignant using the mixed model.

Abstract: A dielectric elastomer drive system A1 includes: a dielectric elastomer drive unit 1 provided with a dielectric elastomer layer 11 and a pair of electrode layers 12 flanking the dielectric elastomer layer 11; a power supply unit 5 configured to apply voltage to the dielectric elastomer drive unit 1; and a charge removal unit 2 configured to remove the charge stored in the dielectric elastomer drive unit 1. The configuration contributes to improving responsiveness.

Abstract: A semiconductor device having both high strength and high thermal radiation that is capable of being applied to mounting on automobiles experiencing many thermal cycles, and a manufacturing method thereof are provided. A circuit board 1a for a resin encapsulated semiconductor module device has a configuration where a silicon nitride plate 2 with a thickness of 0.635 mm has copper plates of 1.0 mm and 0.8 mm bonded to both sides thereof via active metal. A copper plate 3a is bonded to the surface side of the silicon nitride plate 2, and a prescribed circuit pattern is formed on the copper plate 3a. Tin-silver-copper cream solder layers 4a and 4b with a thickness of 200 ?m are formed at a prescribed location on the circuit pattern 3a on which a semiconductor element 6 is mounted and at a prescribed location of a base plate 1 on which the circuit board 1a is disposed.

Abstract: There is provided a thinner high frequency power module structure having reduced the mounting area. An insulated board is provided with a composite metal board in which the Cu2O powder particles are dispersed into a matrix metal (Cu) (amount of addition of Cu2O: 20 vol %; thermal expansion coefficient: 10.0 ppm/° C.; thermal conductivity: 280 W/m•K; thickness: 1 mm; size: 42.4×85 mm), a silicon nitride board (thermal expansion coefficient: 3.4 ppm/° C.; thermal conductivity: 90 W/m•K; thickness: 0.3 mm; size: 30×50 mm) deposited with Ag-system bonding metal layer to one principal surface of the composite metal board, and a wiring metal board formed of copper or copper alloy provided to the other principal surface of the ceramics insulated board. For example, the bonding metal layer is adjusted in the thickness to 50 ?m, while the wiring metal board is also adjusted in the thickness to 0.4 mm.

Abstract: A semiconductor device having both high strength and high thermal radiation that is capable of being applied to mounting on automobiles experiencing many thermal cycles, and a manufacturing method thereof are provided. A circuit board 1a for a resin encapsulated semiconductor module device has a configuration where a silicon nitride plate 2 with a thickness of 0.635 mm has copper plates of 1.0 mm and 0.8 mm bonded to both sides thereof via active metal. A copper plate 3a is bonded to the surface side of the silicon nitride plate 2, and a prescribed circuit pattern is formed on the copper plate 3a. Tin-silver-copper cream solder layers 4a and 4b with a thickness of 200 ?m are formed at a prescribed location on the circuit pattern 3a on which a semiconductor element 6 is mounted and at a prescribed location of a base plate 1 on which the circuit board 1a is disposed.