Patents by Inventor Mitsuhiko Shirakashi
Mitsuhiko Shirakashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160172221Abstract: A substrate processing apparatus includes first and second polishing units for polishing a peripheral portion of a substrate, a primary cleaning unit for cleaning the substrate, a secondary cleaning and drying unit for drying the substrate cleaned in the primary cleaning unit, and a measurement unit for measuring the peripheral portion of the substrate. The measurement unit includes a mechanism for measurement required for polishing in the first and second polishing units, such as a diameter measurement mechanism, a cross-sectional shape measurement mechanism, or a surface condition measurement mechanism.Type: ApplicationFiled: February 4, 2016Publication date: June 16, 2016Inventors: Tamami TAKAHASHI, Mitsuhiko SHIRAKASHI, Kenya ITO, Kazuyuki INOUE, Kenji YAMAGUCHI, Masaya SEKI
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Patent number: 9287158Abstract: A substrate processing apparatus includes first and second polishing units for polishing a peripheral portion of a substrate, a primary cleaning unit for cleaning the substrate, a secondary cleaning and drying unit for drying the substrate cleaned in the primary cleaning unit, and a measurement unit for measuring the peripheral portion of the substrate. The measurement unit includes a mechanism for measurement required for polishing in the first and second polishing units, such as a diameter measurement mechanism, a cross-sectional shape measurement mechanism, or a surface condition measurement mechanism.Type: GrantFiled: April 18, 2006Date of Patent: March 15, 2016Assignee: EBARA CORPORATIONInventors: Tamami Takahashi, Mitsuhiko Shirakashi, Kenya Ito, Kazuyuki Inoue, Kenji Yamaguchi, Masaya Seki
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Patent number: 8133380Abstract: A method and device for regenerating an ion exchanger can regenerate an ion exchanger easily and quickly, and can minimize a load upon cleaning of the regenerated ion exchanger and disposal of waste liquid. A method for regenerating a contaminated ion exchanger includes: providing a pair of a regeneration electrode and a counter electrode, a partition disposed between the electrodes, and an ion exchanger to be regenerated disposed between the counter electrode and the partition; and applying a voltage between the regeneration electrode and the counter electrode while supplying a liquid between the partition and the regeneration electrode and also supplying a liquid between the partition and the counter electrode.Type: GrantFiled: August 14, 2008Date of Patent: March 13, 2012Assignee: Ebara CorporationInventors: Takayuki Saito, Tsukuru Suzuki, Yuji Makita, Kaoru Yamada, Masayuki Kumekawa, Hozumi Yasuda, Osamu Nabeya, Kazuto Hirokawa, Mitsuhiko Shirakashi, Yasushi Toma, Itsuki Kobata
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Patent number: 8029333Abstract: A device for polishing the peripheral edge part of a semiconductor wafer includes a wafer stage for holding the wafer, a wafer stage unit including devices for rotating the wafer stage, causing the wafer stage to undergo a rotary reciprocating motion within the same plane as the surface of the wafer stage, and moving the wafer stage parallel to the surface, a notch polishing part for polishing the notch on the wafer and a bevel polishing part for polishing the beveled part of the wafer. Pure water is supplied to the wafer to prevent it from becoming dry as it is transported from the notch polishing part to the bevel polishing part.Type: GrantFiled: October 17, 2007Date of Patent: October 4, 2011Assignees: EBARA Corporation, NIHON Micro Coating Co., Ltd.Inventors: Tamami Takahashi, Kenya Ito, Mitsuhiko Shirakashi, Kazuyuki Inoue, Kenji Yamaguchi, Masaya Seki, Satoru Sato, Jun Watanabe, Kenji Kato, Jun Tamura, Souichi Asakawa
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Patent number: 7655118Abstract: This invention relates to an electrolytic processing apparatus and method useful for processing a conductive material formed in the surface of a substrate, or for removing impurities adhering to the surface of a substrate. An electrolytic processing apparatus, including, a processing electrode that can come close to a workpiece, a feeding electrode for feeding electricity to the workpiece, an ion exchanger disposed in the space between the workpiece and the processing and the feeding electrodes, a fluid supply section for supplying a fluid between the workpiece and the ion exchanger, and a power source. The processing electrode and/or the feeding electrode is electrically divided into a plurality of parts, and the power source applies a voltage to each of the divided electrode parts and can control voltage and/or electric current independently for each of the divided electrode parts.Type: GrantFiled: January 31, 2003Date of Patent: February 2, 2010Assignee: Ebara CorporationInventors: Mitsuhiko Shirakashi, Masayuki Kumekawa, Hozumi Yasuda, Itsuki Kobata, Osamu Nabeya
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Patent number: 7638030Abstract: An electrolytic processing apparatus which, while eliminating a CMP processing entirely or reducing a load on a CMP processing to the least possible extent, can process and flatten a conductive material formed in the surface of a substrate, or can remove (clean) extraneous matter adhering to the surface of a workpiece such as a substrate. The present invention includes an electrode section including a plurality of electrode members disposed in parallel, each electrode member including an electrode and an ion exchanger covering the surface of the electrode, a holder for holding a workpiece, which is capable of bringing the workpiece close to or into contact with the ion exchanger of the electrode member, and a power source to be connected to the electrode of each electrode member of the electrode section. The ion exchanger of the electrode member includes an ion exchanger having an excellent surface smoothness and an ion exchanger having a large ion exchange capacity.Type: GrantFiled: September 25, 2003Date of Patent: December 29, 2009Assignee: Ebara CorporationInventors: Osamu Nabeya, Masayuki Kumekawa, Hozumi Yasuda, Itsuki Kobata, Takeshi Iizumi, Nobuyuki Takada, Koichi Fukaya, Mitsuhiko Shirakashi, Takayuki Saito, Yasushi Toma, Tsukuru Suzuki, Kaoru Yamada, Yuji Makita
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Patent number: 7569135Abstract: The present invention replaces all or a portion of substrate processing by chemical-mechanical polishing with electrolytic processing using deionized water, ultrapure water or the like. An electrolytic processing apparatus comprises: a chemical-mechanical polishing section for chemically-mechanically polishing a surface of a substrate; an electrolytic processing section having a processing electrode and a feeding electrode, and also having an ion exchanger provided at least either between the substrate and the processing electrode or between the substrate and the feeding electrode, for electrolytically processing a surface of a workpiece under existence of a solution by applying a voltage between the processing electrode and the feeding electrode; and a top ring capable of freely moving between the chemical-mechanical polishing section and the processing electrode section.Type: GrantFiled: March 22, 2007Date of Patent: August 4, 2009Assignee: Ebara CorporationInventors: Mitsuhiko Shirakashi, Masayuki Kumekawa, Hozumi Yasuda, Itsuki Kobata, Ikutaro Noji, Kaori Yoshida
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Publication number: 20090093192Abstract: A device for polishing the peripheral edge part of a semiconductor wafer includes a wafer stage for holding the wafer, a wafer stage unit including devices for rotating the wafer stage, causing the wafer stage to undergo a rotary reciprocating motion within the same plane as the surface of the wafer stage, and moving the wafer stage parallel to the surface, a notch polishing part for polishing the notch on the wafer and a bevel polishing part for polishing the beveled part of the wafer. Pure water is supplied to the wafer to prevent it from becoming dry as it is transported from the notch polishing part to the bevel polishing part.Type: ApplicationFiled: April 18, 2006Publication date: April 9, 2009Applicants: EBARA CORPORATION, NIHON MICRO COATING CO., LTD.Inventors: Tamami Takahashi, Kenya Ito, Mitsuhiko Shirakashi, Kazuyuki Inoue, Kenji Yamaguchi, Masaya Seki, Satoru Sato, Jun Watanabe, Kenji Kato, Jun Tamura, Souichi Asakawa
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Publication number: 20090017733Abstract: A substrate processing apparatus (1) has a first polishing unit (400A) and a second polishing unit (400B) for polishing a peripheral portion of a substrate. Each of the two polishing units (400A, 400B) includes a bevel polishing device (450A, 450B) for polishing a peripheral portion of a substrate and a notch polishing device (480A, 480B) for polishing a notch of a substrate. The substrate processing apparatus (1) has a maintenance space (7) formed between the two polishing units (400A, 400B). The bevel polishing devices (450A, 450B) in the two polishing units (400A, 400B) face the maintenance space (7) so as to be accessible from the maintenance space (7).Type: ApplicationFiled: April 18, 2006Publication date: January 15, 2009Applicant: EBARA CORPORATIONInventors: Tamami Takahashi, Mitsuhiko Shirakashi, Kenya Ito, Kazuyuki Inoue, Kenji Yamaguchi, Masaya Seki
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Patent number: 7427345Abstract: A method and device for regenerating an ion exchanger can regenerate an ion exchanger easily and quickly, and can minimize a load upon cleaning of the regenerated ion exchanger and disposal of waste liquid. A method for regenerating a contaminated ion exchanger includes: providing a pair of a regeneration electrode and a counter electrode, a partition disposed between the electrodes, and an ion exchanger to be regenerated disposed between the counter electrode and the partition; and applying a voltage between the regeneration electrode and the counter electrode while supplying a liquid between the partition and the regeneration electrode and also supplying a liquid between the partition and the counter electrode.Type: GrantFiled: November 29, 2002Date of Patent: September 23, 2008Assignee: Ebara CorporationInventors: Takayuki Saito, Tsukuru Suzuki, Yuji Makita, Kaoru Yamada, Masayuki Kumekawa, Hozumi Yasuda, Osamu Nabeya, Kazuto Hirokawa, Mitsuhiko Shirakashi, Yasushi Toma, Itsuki Kobata
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Publication number: 20080200100Abstract: A substrate processing apparatus (1) includes first and second polishing units (70A, 70B) for polishing a peripheral portion of a substrate (W), a primary cleaning unit (100) for cleaning the substrate (W), a secondary cleaning and drying unit (110) for drying the substrate (W) cleaned in the primary cleaning unit (100), and a measurement unit (30) for measuring the peripheral portion of the substrate (W). The measurement unit (30) includes a mechanism for measurement required for polishing in the first and second polishing units (70A and 70B), such as a diameter measurement mechanism, a cross-sectional shape measurement mechanism, or a surface condition measurement mechanism.Type: ApplicationFiled: April 18, 2006Publication date: August 21, 2008Applicant: EBARA CORPORATIONInventors: Tamami Takahashi, Mitsuhiko Shirakashi, Kenya Ito, Kazuyuki Inoue, Kenji Yamaguchi, Masaya Seki
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Publication number: 20070187259Abstract: A substrate processing apparatus can perform an electrolytic processing, which is different from a common, conventional etching, to remove (clean off) a conductive material (film) formed on or adhering to a bevel portion, etc. of a substrate, or process a peripheral portion of a substrate through an electrochemical action. The substrate processing apparatus includes: an electrode section having a plurality of electrodes which are laminated with insulators being interposed, and having a holding portion which is to be opposed to a peripheral portion of a substrate; an ion exchanger disposed in the holding portion of the electrode section; a liquid supply section for supplying a liquid to the holding position of the electrode section; and a power source for applying a voltage to the electrodes of the electrode section so that the electrodes alternately have different polarities.Type: ApplicationFiled: March 9, 2007Publication date: August 16, 2007Inventors: Itsuki Kobata, Mitsuhiko Shirakashi, Masayuki Kumekawa, Takayuki Saito, Yasushi Toma, Tsukuru Suzuki, Kaoru Yamada, Yuji Makita, Hozumi Yasuda
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Patent number: 7255778Abstract: An electrochemical machining apparatus comprises a machining chamber for holding ultrapure water, a cathode/anode immersed in the ultrapure water held in the machining chamber, and a workpiece holding portion for holding a workpiece at a predetermined distance from the cathode/anode so that a surface, to be machined, of the workpiece is brought into contact with the ultrapure water. The electrochemical machining apparatus further comprises an anode/cathode contact brought into contact with the workpiece held by the workpiece holding portion so that the workpiece serves as an anode/cathode, a catalyst having a strongly basic anion exchange function or a strongly acidic cation exchange function, a power source for applying a voltage between the cathode/anode and the workpiece, and a moving mechanism for relatively moving the workpiece and the catalyst. The catalyst is disposed between the cathode/anode and the workpiece held by the workpiece holding portion.Type: GrantFiled: April 21, 2004Date of Patent: August 14, 2007Assignees: Ebara CorporationInventors: Yuzo Mori, Mitsuhiko Shirakashi, Yasushi Toma, Itsuki Kobata, Takayuki Saito
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Publication number: 20070181432Abstract: The present invention replaces all or a portion of substrate processing by chemical-mechanical polishing with electrolytic processing using deionized water, ultrapure water or the like. An electrolytic processing apparatus comprises: a chemical-mechanical polishing section for chemically-mechanically polishing a surface of a substrate; an electrolytic processing section having a processing electrode and a feeding electrode, and also having an ion exchanger provided at least either between the substrate and the processing electrode or between the substrate and the feeding electrode, for electrolytically processing a surface of a workpiece under existence of a solution by applying a voltage between the processing electrode and the feeding electrode; and a top ring capable of freely moving between the chemical-mechanical polishing section and the processing electrode section.Type: ApplicationFiled: March 22, 2007Publication date: August 9, 2007Inventors: Mitsuhiko Shirakashi, Masayuki Kumekawa, Hozumi Yasuda, Itsuki Kobata, Ikutaro Noji, Kaori Yoshida
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Publication number: 20070122559Abstract: The present invention relates to a processing liquid coating apparatus and a processing liquid coating method suitable for use in a lithography process for forming fine circuit patterns on a surface of a substrate such as a semiconductor wafer. The processing liquid coating apparatus according to the present invention includes a substrate holder (1) for holing and rotating a substrate (W), and a processing liquid supply unit (2) disposed apart from the substrate (w) held by the substrate holder (1). The processing liquid supply unit (2) has a plurality of supply ports (5, 6) for supplying a processing liquid to a plurality of portions including a central portion (C) of a surface of the substrate (W). A resist liquid or a developer is used as the processing liquid.Type: ApplicationFiled: October 27, 2004Publication date: May 31, 2007Inventors: Mitsuhiko Shirakashi, Masayoshi Hirose
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Patent number: 7208076Abstract: A substrate processing apparatus can perform an electrolytic processing, which is different from a common, conventional etching, to remove (clean off) a conductive material (film) formed on or adhering to a bevel portion, etc. of a substrate, or process a peripheral portion of a substrate through an electrochemical action. The substrate processing apparatus includes: an electrode section having a plurality of electrodes which are laminated with insulators being interposed, and having a holding portion which is to be opposed to a peripheral portion of a substrate; an ion exchanger disposed in the holding portion of the electrode section; a liquid supply section for supplying a liquid to the holding position of the electrode section; and a power source for applying a voltage to the electrodes of the electrode section so that the electrodes alternately have different polarities.Type: GrantFiled: September 11, 2002Date of Patent: April 24, 2007Assignee: Ebara CorporationInventors: Itsuki Kobata, Mitsuhiko Shirakashi, Masayuki Kumekawa, Takayuki Saito, Yasushi Toma, Tsukuru Suzuki, Kaoru Yamada, Yuji Makita, Hozumi Yasuda
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Publication number: 20060234508Abstract: There is provided a substrate processing apparatus which can process a substrate by using an electrolytic processing method, while reducing a load upon a CMP processing to the least possible extent. The substrate processing apparatus of the present invention includes: an electrolytic processing unit (36) for electrolytically removing the surface of the substrate W having a to-be-processed film formed in said surface, said unit including a feeding section (373) that comes into contact with said surface of the substrate W; a bevel-etching unit (48) for etching away the to-be-processed film remaining unprocessed at the portion of the substrate that has been in contact with the feeding section (373) in the electrolytic processing unit (36); a chemical mechanical polishing unit (34) for chemically and mechanically polishing the surface of the substrate.Type: ApplicationFiled: May 16, 2003Publication date: October 19, 2006Inventors: Mitsuhiko Shirakashi, Hozumi Yasuda, Masayuki Kumekawa, Itsuki Kobata
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Patent number: 7108589Abstract: A polishing apparatus and method has a function of polishing a surface of a film formed on a substrate to a flat mirror finish and a function of polishing unnecessary metal film such as copper film deposited on an outer peripheral portion of the substrate to remove such unnecessary metal film. The polishing apparatus comprises a surface polishing mechanism comprising a polishing table having a polishing surface and a top ring for holding the substrate and pressing the substrate against the polishing surface of the polishing table to thereby polish a surface of the substrate, and an outer periphery polishing mechanism for polishing an outer peripheral portion of the substrate.Type: GrantFiled: July 25, 2005Date of Patent: September 19, 2006Assignees: Ebara Corporation, Kabushiki Kaisha ToshibaInventors: Norio Kimura, Mitsuhiko Shirakashi, Katsuya Okumura, You Ishii, Junji Kunisawa, Hiroyuki Yano
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Patent number: 7101259Abstract: A polishing apparatus is used for chemical mechanical polishing a copper (Cu) layer formed on a substrate such as a semiconductor wafer and then cleaning the polished substrate. The polishing apparatus has a polishing section having a turntable with a polishing surface and a top ring for holding a substrate and pressing the substrate against the polishing surface to polish a surface having a semiconductor device thereon, and a cleaning section for cleaning the substrate which has been polished. The cleaning section has an electrolyzed water supply device for supplying electrolyzed water to the substrate to clean the polished surface of the substrate while supplying electrolyzed water to the substrate.Type: GrantFiled: October 28, 2003Date of Patent: September 5, 2006Assignees: Ebara Corporation, Kabushiki Kaisha ToshibaInventors: Norio Kimura, Mitsuhiko Shirakashi, Katsuhiko Tokushige, Masao Asami, Naoto Miyashita, Masako Kodera, Yoshitaka Matsui, Soichi Nadahara, Hiroshi Tomita
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Patent number: 7101465Abstract: There is provided an electrolytic processing device including: a processing electrode to be brought into contact with or close to a workpiece; a feeding electrode for supplying electricity to the workpiece; an ion exchanger disposed in at least one of spaces between the workpiece and the processing electrode, and between the workpiece and the feeding electrode; a power source for applying a voltage between the processing electrode and the feeding electrode; and a liquid supply section for supplying a liquid to the space between the workpiece and at least one of the processing electrode and the feeding electrode, in which the ion exchanger is present. A substrate processing apparatus having the electrolytic processing device is also provided.Type: GrantFiled: January 7, 2003Date of Patent: September 5, 2006Assignee: Ebara CorporationInventors: Itsuki Kobata, Mitsuhiko Shirakashi, Masayuki Kumekawa, Takayuki Saito, Yasushi Toma, Tsukuru Suzuki, Kaoru Yamada, Yuji Makita, Hozumi Yasuda