Abstract: A semiconductor light emitting device can include a casing having a concave-shaped cavity with an opening, a semiconductor light emitting element installed in a bottom portion of the cavity, and a resin layer for filling an interior of the cavity. The resin layer can include a wavelength conversion material, and can be formed in a convex shape in a light radiation direction of the light emitting element. In the resin layer a layer with a high density of the wavelength conversion material can be formed near a surface of the convex shape.

Abstract: The invention provides a physiologically active polypeptide- or protein-encapsulating polymer micelle composition derived from a block copolymer comprising hydrophilic segments and hydrophobic segments.

Abstract: A semiconductor light emitting device and method of manufacturing the same can provide a light source that has less variation in color and brightness and can reduce radiation of light that is possibly harmful to humans. The device can include a casing that has a first cavity having an oblique surface with a reflective surface formed thereon and a second cavity having an almost vertical side. A reflective frame having an oblique surface with a third reflective surface formed thereon can be formed on the casing. A semiconductor light emitting element can be mounted on the bottom in the first cavity. A first resin composed of a light-transmissive resin can be filled in the first cavity and then cured. Further, a second resin containing a fluorescent material dispersed in a light-transmissive resin can be filled in the second cavity and then cured while the casing is turned upside down to form a high-density fluorescent material layer near the surface of the second resin.

Abstract: A semiconductor light emitting device can vary color temperatures of its emission light and have a simple and small configuration. The semiconductor light emitting device can include a substrate, electrode wiring formed on the substrate, a plurality of semiconductor light emitting elements mounted on the electrode wiring, and a wavelength conversion layer surrounding the semiconductor light emitting elements. The semiconductor light emitting elements constitute a first semiconductor light emitting element group and a second semiconductor light emitting element group. The wavelength conversion layer has a thinner portion corresponding to the first group and a thicker portion corresponding to the second group and can be differentiated by a step provided on the substrate.

Abstract: A semiconductor light emitting device can include a light emitting element with a semiconductor epitaxial layer which has a light emitting portion, and an element substrate which supports the semiconductor epitaxial layer and does not transmit light from the light emitting portion. A resin layer can be provided on the element substrate in a way covering side surfaces and an upper surface of the semiconductor epitaxial layer. The resin layer can contain fluorescent substances that wavelength-convert light from the light emitting portion, and can be inclined toward the top at one cross section. Therefore, the semiconductor light emitting device can exhibit a front luminance distribution having a difference in front luminance between the light emitting portion and the light non-emitting portion at an end portion of the semiconductor light emitting device.

Abstract: The present invention provides a method of encapsulating a low molecular weight drug in a polymer micelle, the method comprising the steps of: (a) dissolving or dispersing the drug having an electric charge in an aqueous medium; (b) preparing an aqueous medium containing a polymer micelle comprising a block copolymer having an overall hydrophobic region and a hydrophilic region, the overall hydrophobic region containing hydrophobic side chains and side chains having an electric charge opposite to that of the low molecular weight drug in random order; (c) mixing the aqueous medium having the low molecular weight drug dissolved or dispersed therein and the aqueous medium containing the polymer micelle; and (d) adjusting the pH of the mixed aqueous medium to a pH at which the encapsulation of the low molecular weight drug is stabilized.

Abstract: A light emitting apparatus with a combination of a plurality of LED chips and a phosphor layer is provided and can be configured to significantly reduce variations in chromaticity and luminance. The plurality of semiconductor light emitting devices (LED chips) are disposed with a gap therebetween, and the phosphor layer is formed on the upper surface thereof to bridge over the gaps between the LED chips. The phosphor layer may be uniform in thickness, but can be less in thickness over the gaps between the LED chips than on the upper surface of the LED chips. The phosphor layer can be continuously formed on the upper surface of the array of the chips with no phosphor layer present in between the chips. This configuration allows for reducing variations in luminance and chromaticity which may result from the gaps or the phosphor layer present in between the gaps.

Abstract: A method for manufacturing a semiconductor light emitting device can include providing a housing having a cavity and a power feed line, a light emitting element connected to the power feed line on a bottom face of the cavity, and a wavelength conversion layer provided within the cavity and containing a wavelength conversion material. When forming the wavelength conversion layer, a first resin with little or no wavelength conversion material can be filled inside the cavity such that the light emitting element surface is slightly exposed and a surface of the first resin is formed in a bowl shape. Then, a second resin with wavelength conversion material contained therein can be filled inside the cavity over the bowl-shaped first resin. These resins can be heated to be hardened. During heating, the viscosities of the resins are reduced to cause the wavelength conversion material to migrate and deposit around the light emitting element.

Abstract: A method for manufacturing a semiconductor light emitting device can result in a device that includes a housing having a cavity, a light emitting element on a bottom face of the cavity, and a wavelength conversion layer provided within the cavity. The wavelength conversion layer can include particles of a wavelength conversion material. The method includes forming the wavelength conversion layer within the cavity, which can include applying and hardening a first material to form a first wavelength conversion layer on the light emitting element, and applying and hardening a second material to substantially fill the remainder of the entire cavity, thereby forming a second wavelength conversion layer. The semiconductor light emitting device manufactured by the inventive method can achieve uniform light emitting characteristics without substantially any uneven color and can include high heat dissipation efficiency.

Abstract: A semiconductor light emitting apparatus can be configured to reduce color variations and intensity variations with a simple configuration. The semiconductor light emitting apparatus can include a substrate having conductive members including chip mounting areas and electrode areas, a plurality of semiconductor light emitting device chips mounted in the chip mounting areas on the substrate, a reflector formed on this substrate so as to surround the semiconductor light emitting device chips, and a fluorescent material and a light diffusing material arranged distributedly inside this reflector. The semiconductor light emitting apparatus can be configured so that the semiconductor light emitting device chips emit light only from their top surfaces, and a first light transmitting resin containing the fluorescent material is applied only to the top surfaces of the semiconductor light emitting device chips.

Abstract: A method for manufacturing a semiconductor light emitting device can result in a device that includes a housing having a cavity, a light emitting element on a bottom face of the cavity, and a wavelength conversion layer provided within the cavity. The wavelength conversion layer can include particles of a wavelength conversion material. The method includes forming the wavelength conversion layer within the cavity, which can include applying and hardening a first material to form a first wavelength conversion layer on the light emitting element, and applying and hardening a second material to substantially fill the remainder of the entire cavity, thereby forming a second wavelength conversion layer. The semiconductor light emitting device manufactured by the inventive method can achieve uniform light emitting characteristics without substantially any uneven color and can include high heat dissipation efficiency.

Abstract: A reliable semiconductor light-emitting device and a method for manufacturing the same can be provided in which peeling can be prevented in a phase boundary, and optical axis positional errors between the optical lens and a semiconductor light-emitting chip can be reduced or prevented. The semiconductor light-emitting device can include a base board having at least one chip, a reflector fixed on the base board so as to enclose the chip, and an encapsulating resin disposed in the reflector. An optical lens can include a concave-shaped cavity that has an inner corner surface having a plurality of convex portions thereon. The optical lens can be located adjacent the reflector by contacting the lens with a top surface of the reflector so as to enclose the reflector. A spacer that is disposed between the concave-shaped cavity and the reflector can ease a stress that is generated due to temperature changes.

Abstract: A light source for vehicles can include a base having a cavity formed on its upper surface, an LED chip mounted in the cavity of the base, a resin portion for sealing the LED chip in the cavity, an optical member disposed above the base and apart from the LED chip, a light shielding portion disposed on the inner surface of the optical member and which forms a cutoff suited for a light distribution pattern, and a fluorescent substance layer disposed at least in regions other than the light shielding portion on the inner surface of the optical member.

Abstract: In a conventional semiconductor light-emitting device having a semiconductor light-emitting element-mounted body and an optical lens which are located adjacent each other, interfacial peeling sometimes occurs at the contact interfaces between components when the device is subjected to outside temperature changes. This may lead to the deterioration of optical characteristics and the reduction in reliability of the device. In accordance with an aspect of the disclosed subject matter, a semiconductor light-emitting element-mounted body can be integrated with the optical lens via a soft resin spacer. Hence, the soft resin spacer can serve as a thermal stress relaxation layer located between the semiconductor light-emitting element-mounted body and the optical lens, which are integrated together. The thermal stress relaxation layer can possibly prevent peeling, caused by thermal stresses due to outside temperature changes, from occurring at the interfaces between the components.

Abstract: A light source for vehicles can include a base having a cavity formed on its upper surface, an LED chip mounted in the cavity of the base, a resin portion for sealing the LED chip in the cavity, an optical member disposed above the base and apart from the LED chip, a light shielding portion disposed on the inner surface of the optical member and which forms a cutoff suited for a light distribution pattern, and a fluorescent substance layer disposed at least in regions other than the light shielding portion on the inner surface of the optical member.

Abstract: A method for manufacturing a semiconductor light emitting device can result in a device that includes a housing having a cavity, a light emitting element on a bottom face of the cavity, and a wavelength conversion layer provided within the cavity. The wavelength conversion layer can include particles of a wavelength conversion material. The method includes forming the wavelength conversion layer within the cavity, which can include applying and hardening a first material to form a first wavelength conversion layer on the light emitting element, and applying and hardening a second material to substantially fill the remainder of the entire cavity, thereby forming a second wavelength conversion layer. The semiconductor light emitting device manufactured by the inventive method can achieve uniform light emitting characteristics without substantially any uneven color and can include high heat dissipation efficiency.

Abstract: A method for manufacturing a semiconductor light emitting device can include providing a housing having a cavity and a power feed line, a light emitting element connected to the power feed line on a bottom face of the cavity, and a wavelength conversion layer provided within the cavity and containing a wavelength conversion material. When forming the wavelength conversion layer, a first resin with little or no wavelength conversion material can be filled inside the cavity such that the light emitting element surface is slightly exposed and a surface of the first resin is formed in a bowl shape. Then, a second resin with wavelength conversion material contained therein can be filled inside the cavity over the bowl-shaped first resin. These resins can be heated to be hardened. During heating, the viscosities of the resins are reduced to cause the wavelength conversion material to migrate and deposit around the light emitting element.

Abstract: A semiconductor light emitting device can include a base having a cavity provided for housing an LED chip and a resin spacer therein. The resin spacer can be composed of at least two layers of spacers including a transparent resin spacer and a wavelength conversion spacer mixed with a fluorescent material and formed to have an almost constant thickness. The wavelength conversion spacer can include a metallic radiation mesh or radiation wire disposed therein.

Abstract: A semiconductor light emitting device can include a casing having a concave-shaped cavity with an opening, a semiconductor light emitting element installed in a bottom portion of the cavity, and a resin layer for filling an interior of the cavity. The resin layer can include a wavelength conversion material, and can be formed in a convex shape in a light radiation direction of the light emitting element.

Abstract: A semiconductor light emitting device and method of manufacturing the same can provide a light source that has less variation in color and brightness and can reduce radiation of light that is possibly harmful to humans. The device can include a casing that has a first cavity having an oblique surface with a reflective surface formed thereon and a second cavity having an almost vertical side. A reflective frame having an oblique surface with a third reflective surface formed thereon can be formed on the casing. A semiconductor light emitting element can be mounted on the bottom in the first cavity. A first resin composed of a light-transmissive resin can be filled in the first cavity and then cured. Further, a second resin containing a fluorescent material dispersed in a light-transmissive resin can be filled in the second cavity and then cured while the casing is turned upside down to form a high-density fluorescent material layer near the surface of the second resin.