Patents by Inventor Mitsuo Mashiyama
Mitsuo Mashiyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20130048978Abstract: Provided is a semiconductor device including an oxide semiconductor and having stable electrical characteristics. Specifically, a semiconductor device including an oxide semiconductor and including a gate insulating film with favorable characteristics is provided. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, an oxide semiconductor film over the gate insulating film, and a source electrode and a drain electrode in contact with the oxide semiconductor film. The gate insulating film includes at least a silicon oxynitride film and an oxygen release type oxide film which is formed over the silicon oxynitride film. The oxide semiconductor film is formed on and in contact with the oxygen release type oxide film.Type: ApplicationFiled: August 23, 2012Publication date: February 28, 2013Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Masahiro WATANABE, Mitsuo MASHIYAMA, Takuya HANDA, Kenichi OKAZAKI, Shunpei YAMAZAKI
-
Publication number: 20130043465Abstract: An oxide semiconductor transistor comprising an oxide semiconductor layer with high conductivity is provided. A semiconductor device including an oxide semiconductor layer comprising an oxide containing indium, gallium, and zinc (IGZO) and a particle of indium oxide; a gate electrode overlapping with a channel formation region in the oxide semiconductor layer with a gate insulating film interposed therebetween; and a source electrode and a drain electrode overlapping with a source region and a drain region in the oxide semiconductor layer. The semiconductor device may be a top-gate oxide semiconductor transistor or a bottom-gate oxide semiconductor transistor. The oxide semiconductor layer may be formed over or below the source electrode and the drain electrode.Type: ApplicationFiled: August 7, 2012Publication date: February 21, 2013Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Kenichi OKAZAKI, Masahiro WATANABE, Mitsuo MASHIYAMA
-
Publication number: 20130011962Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.Type: ApplicationFiled: September 5, 2012Publication date: January 10, 2013Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Shunpei YAMAZAKI, Tetsunori MARUYAMA, Yuki IMOTO, Hitomi SATO, Masahiro WATANABE, Mitsuo MASHIYAMA, Kenichi OKAZAKI, Motoki NAKASHIMA, Takashi SHIMAZU
-
Publication number: 20120326145Abstract: An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process.Type: ApplicationFiled: September 5, 2012Publication date: December 27, 2012Inventors: Yoshiaki Oikawa, Shingo Eguchi, Mitsuo Mashiyama, Masatoshi Kataniwa, Hironobu Shoji, Masataka Nakada, Satoshi Seo
-
Publication number: 20120325650Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.Type: ApplicationFiled: September 5, 2012Publication date: December 27, 2012Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Shunpei Yamazaki, Tetsunori Maruyama, Yuki Imoto, Hitomi Sato, Masahiro Watanabe, Mitsuo Mashiyama, Kenichi Okazaki, Motoki Nakashima, Takashi Shimazu
-
Publication number: 20120312681Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.Type: ApplicationFiled: June 5, 2012Publication date: December 13, 2012Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Shunpei Yamazaki, Tetsunori Maruyama, Yuki Imoto, Hitomi Sato, Masahiro Watanabe, Mitsuo Mashiyama, Kenichi Okazaki, Motoki Nakashima, Takashi Shimazu
-
Publication number: 20120298998Abstract: The impurity concentration in the oxide semiconductor film is reduced, and a highly reliability can be obtained.Type: ApplicationFiled: May 17, 2012Publication date: November 29, 2012Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Shunpei YAMAZAKI, Masahiro WATANABE, Mitsuo MASHIYAMA, Kenichi OKAZAKI, Motoki NAKASHIMA, Hideyuki KISHIDA
-
Patent number: 8264144Abstract: An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process.Type: GrantFiled: July 9, 2009Date of Patent: September 11, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yoshiaki Oikawa, Shingo Eguchi, Mitsuo Mashiyama, Masatoshi Kataniwa, Hironobu Shoji, Masataka Nakada, Satoshi Seo
-
Patent number: 8169588Abstract: A flexible and highly reliable liquid crystal display device which is not easily damaged even if subjected to external pressure is provided. A method for manufacturing, with high yield, a flexible and highly reliable liquid crystal display device which is not easily damaged even if subjected to external pressure is also provided. A liquid crystal display device including a first structure body including a first fibrous body and a first organic resin, a second structure body including a second fibrous body and a second organic resin, a liquid crystal interposed between the first and second structure bodies, and a seal member for fixing the first and second structure bodies and for enclosing the liquid crystal. The first and second fibrous bodies are impregnated with the first and second organic resins, respectively, and the first structure body and the second structure body are in contact with each other.Type: GrantFiled: July 7, 2009Date of Patent: May 1, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yoshiaki Oikawa, Shingo Eguchi, Mitsuo Mashiyama, Masatoshi Kataniwa, Hironobu Shoji, Masataka Nakada
-
Patent number: 8144389Abstract: An object of the present invention is to increase the resistance of electronic paper to external stress. The resistance to external stress is increased by providing an element formation layer, which includes an integrated circuit portion, a first electrode, a second electrode, and a charged particle-containing layer, between a first insulating film including a first structure body in which a first fibrous body is impregnated with a first organic resin, and a second insulating film including a second structure body in which a second fibrous body is impregnated with a second organic resin.Type: GrantFiled: January 7, 2011Date of Patent: March 27, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yoshiaki Oikawa, Shingo Eguchi, Mitsuo Mashiyama, Masatoshi Kataniwa, Hironobu Shoji, Masataka Nakada
-
Publication number: 20110095298Abstract: An object of the present invention is to increase the resistance of electronic paper to external stress. The resistance to external stress is increased by providing an element formation layer, which includes an integrated circuit portion, a first electrode, a second electrode, and a charged particle-containing layer, between a first insulating film including a first structure body in which a first fibrous body is impregnated with a first organic resin, and a second insulating film including a second structure body in which a second fibrous body is impregnated with a second organic resin.Type: ApplicationFiled: January 7, 2011Publication date: April 28, 2011Inventors: Yoshiaki Oikawa, Shingo Eguchi, Mitsuo Mashiyama, Masatoshi Kataniwa, Hironobu Shoji, Masataka Nakada
-
Patent number: 7869119Abstract: An object of the present invention is to increase the resistance of electronic paper to external stress. The resistance to external stress is increased by providing an element formation layer, which includes an integrated circuit portion, a first electrode, a second electrode, and a charged particle-containing layer, between a first insulating film including a first structure body in which a first fibrous body is impregnated with a first organic resin, and a second insulating film including a second structure body in which a second fibrous body is impregnated with a second organic resin.Type: GrantFiled: July 8, 2009Date of Patent: January 11, 2011Assignee: Semiconductor Energy laborator Co., Ltd.Inventors: Yoshiaki Oikawa, Shingo Eguchi, Mitsuo Mashiyama, Masatoshi Kataniwa, Hironobu Shoji, Masataka Nakada
-
Publication number: 20100013372Abstract: An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process.Type: ApplicationFiled: July 9, 2009Publication date: January 21, 2010Inventors: Yoshiaki Oikawa, Shingo Eguchi, Mitsuo Mashiyama, Masatoshi Kataniwa, Hironobu Shoji, Masataka Nakada, Satoshi Seo
-
Publication number: 20100007942Abstract: An object of the present invention is to increase the resistance of electronic paper to external stress. The resistance to external stress is increased by providing an element formation layer, which includes an integrated circuit portion, a first electrode, a second electrode, and a charged particle-containing layer, between a first insulating film including a first structure body in which a first fibrous body is impregnated with a first organic resin, and a second insulating film including a second structure body in which a second fibrous body is impregnated with a second organic resin.Type: ApplicationFiled: July 8, 2009Publication date: January 14, 2010Inventors: Yoshiaki Oikawa, Shingo Eguchi, Mitsuo Mashiyama, Masatoshi Kataniwa, Hironobu Shoji, Masataka Nakada
-
Publication number: 20100007829Abstract: A flexible and highly reliable liquid crystal display device which is not easily damaged even if subjected to external pressure is provided. A method for manufacturing, with high yield, a flexible and highly reliable liquid crystal display device which is not easily damaged even if subjected to external pressure is also provided. A liquid crystal display device including a first structure body including a first fibrous body and a first organic resin, a second structure body including a second fibrous body and a second organic resin, a liquid crystal interposed between the first and second structure bodies, and a seal member for fixing the first and second structure bodies and for enclosing the liquid crystal. The first and second fibrous bodies are impregnated with the first and second organic resins, respectively, and the first structure body and the second structure body are in contact with each other.Type: ApplicationFiled: July 7, 2009Publication date: January 14, 2010Inventors: Yoshiaki Oikawa, Shingo Eguchi, Mitsuo Mashiyama, Masatoshi Kataniwa, Hironobu Shoji, Masataka Nakada
-
Publication number: 20100006141Abstract: The purpose of the invention is to provide a highly reliable photoelectric conversion device having flexibility and resistance to external stress. In the photoelectric conversion device, following are included: a first sealing layer and a second sealing layer that are provided to face each other; and a photoelectric conversion element group which is provided by being interposed between the first sealing layer and second sealing layer that are provided to face each other. The first sealing layer includes a first structure body in which a first fibrous body is impregnated with a first organic resin, the second sealing layer includes a second structure body in which a second fibrous body is impregnated with a second organic resin, and a periphery of the photoelectric conversion element group includes a region where the first sealing layer and second sealing layer that are provided to face each other are attached to each other.Type: ApplicationFiled: July 8, 2009Publication date: January 14, 2010Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yoshiaki OIKAWA, Shingo EGUCHI, Mitsuo MASHIYAMA, Masatoshi KATANIWA, Hironobu SHOJI, Masataka NAKADA