Patents by Inventor Mitsuo Morooka

Mitsuo Morooka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20010022361
    Abstract: The present invention relates to minimizing a leakage current in a floating island portion formed in a thin film transistor. More specifically, the present invention is directed to a thin film transistor including: a source electrode 14 and a drain electrode 15 disposed above an insulating substrate 11 at a predetermined interval; an s-Si film 16 disposed in relation to the source electrode 14 and drain electrode 15; a gate insulating film 17 overlapping the a-Si film 16; and a gate electrode 18 overlapping the gate insulating film 17, in which the a-Si film 16 is disposed between the source electrode 14 and the drain electrode 15 and has a floating island portion 20 above which or beneath which the gate electrode 18 is not formed, and boron ions are implanted into this portion to form a boron-ion-implanted region 19.
    Type: Application
    Filed: January 16, 2001
    Publication date: September 20, 2001
    Inventors: Takatoshi Tsujimura, Osamu Tokuhiro, Mitsuo Morooka, Takashi Miyamoto