Abstract: According to one embodiment, an automatic analyzing apparatus includes a probe and a liquid level detector. The liquid level detector is electrically connected to the probe and detects contact between the probe and a liquid surface, wherein the liquid level detector comprises an adjuster configured to adjust electrostatic capacitance of one or more capacitors for circuitry for use in liquid level detection.

Abstract: According to one embodiment, an automatic analyzing apparatus includes processing circuitry. The processing circuitry measures an electrical potential pertaining to a contact between a probe for dispensing a sample or a reagent and a liquid surface, and outputs the measured electrical potential as a measurement value, determines whether or not the measurement value is within a specific range, and outputs a determination result, and provides a notification on a state of a liquid related to the liquid surface according to the determination result.

Abstract: An automatic analyzing apparatus according to the present embodiment includes a specimen container, a piercer, a detector, and processing circuitry. The specimen container is a container in which a specimen is housed, an opening of the specimen container being sealed by a cap. The piercer pierces the cap by a distal end. The detector detects a blot on the cap. The processing circuitry controls a piercing operation of the piercer.

Abstract: According to one embodiment, an automatic analyzing apparatus includes a probe and a liquid level detector. The liquid level detector is electrically connected to the probe and detects contact between the probe and a liquid surface, wherein the liquid level detector comprises an adjuster configured to adjust electrostatic capacitance of one or more capacitors for circuitry for use in liquid level detection.

Abstract: An automated analyzing apparatus according to one embodiment comprises a barcode reader and a cylindrical lens. The barcode reader emits light toward a barcode attached to at least one of a specimen container storing a test sample, a reagent container storing a reagent to be reacted with the test sample, and a specimen rack housing a plurality of the specimen containers arranged in a line, and reads the barcode on the basis of reflected light of the applied light. The cylindrical lens is placed between at least one of the specimen container, the reagent container, and the specimen rack, and the barcode reader.

Abstract: A silicon nitride film having a thickness in a range from 1 [nm] to 3 [nm] is deposited on a front surface of a silicon carbide semiconductor base, by an ALD method. Next, on the silicon nitride film, for example, a silicon oxide film having a thickness in a range from 20 [nm] to 100 [nm] is deposited. After deposition of the silicon oxide film, for example, heat treatment is performed at a temperature in a range from 1100 degrees C. to 1350 degrees C., in a gas atmosphere that includes oxygen. By this heat treatment, nitrogen surface density of an interface of the silicon carbide semiconductor base and the silicon oxide film (gate insulating film) is increased, reducing interface state density of the interface of the silicon carbide semiconductor base and the silicon nitride film.

Abstract: In forming an ohmic electrode on a back surface of an n-type SiC substrate, an n+-type semiconductor region is formed in a surface layer of the back surface of an n-type epitaxial substrate by ion implantation. In this ion implantation, the impurity concentration of the n+-type semiconductor region is a predetermined range and preferably a predetermined value or less, and an n-type impurity is implanted by acceleration energy of a predetermined range such that the n+-type semiconductor region has a predetermined thickness or less. Thereafter, a nickel layer and a titanium layer are sequentially formed on the surface of the n+-type semiconductor region, the nickel layer is heat treated to form a silicide, and the ohmic electrode formed from nickel silicide is formed. In this manner, a back surface electrode that has favorable properties can be formed while peeling of the back surface electrode can be suppressed.

Abstract: A silicon nitride film having a thickness in a range from 1 [nm] to 3 [nm] is deposited on a front surface of a silicon carbide semiconductor base, by an ALD method. Next, on the silicon nitride film, for example, a silicon oxide film having a thickness in a range from 20 [nm] to 100 [nm] is deposited. After deposition of the silicon oxide film, for example, heat treatment is performed at a temperature in a range from 1100 degrees C. to 1350 degrees C., in a gas atmosphere that includes oxygen. By this heat treatment, nitrogen surface density of an interface of the silicon carbide semiconductor base and the silicon oxide film (gate insulating film) is increased, reducing interface state density of the interface of the silicon carbide semiconductor base and the silicon nitride film.

Abstract: A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate of a first conductivity type, a gate insulating film provided on a front surface of the silicon carbide semiconductor substrate and including any one or a plurality of an oxide film, a nitride film, and an oxynitride film, and a gate electrode containing poly-silicon and provided on the gate insulating film. A concentration of fluorine in the gate insulating film at an interface with the silicon carbide semiconductor substrate is equal to or higher than 1×1019 atoms/cm3.

Abstract: A silicon carbide semiconductor device, including a silicon carbide semiconductor substrate, and an insulating film formed on a front surface of the silicon carbide semiconductor substrate. The silicon carbide semiconductor substrate has fluorine implanted therein, a concentration of which is in a range of 2×1017/cm3 to 4×1018/cm3. A method of manufacturing the silicon carbide semiconductor device includes providing a silicon carbide semiconductor substrate, forming an oxide film on a front surface of the silicon carbide semiconductor substrate, removing a portion of the oxide film to expose the silicon carbide semiconductor substrate, implanting fluorine ions in the front surface of the silicon carbide semiconductor substrate through the removed portion of the oxide film, removing the oxide film after the fluorine ions are implanted, and forming an insulating film on the front surface of the silicon carbide semiconductor substrate after the oxide film is removed.

Abstract: A method of manufacturing a silicon carbide semiconductor device includes forming on a front surface of a silicon carbide substrate of a first conductivity type, a silicon carbide layer of the first conductivity type of a lower concentration; selectively forming a region of a second conductivity type in a surface portion of the silicon carbide layer; selectively forming a source region of the first conductivity type in the region; forming a source electrode electrically connected to the source region; forming a gate insulating film on a surface of the region between the silicon carbide layer and the source region; forming a gate electrode on the gate insulating film; forming a drain electrode on a rear surface of the substrate; forming metal wiring comprising aluminum for the device, the metal wiring being connected to the source electrode; and performing low temperature nitrogen annealing after the metal wiring is formed.

Abstract: A silicon carbide semiconductor device, including a silicon carbide semiconductor structure, an insulated gate structure including a gate insulating film contacting the silicon carbide semiconductor structure and a gate electrode formed on the gate insulating film, an interlayer insulating film covering the insulated gate structure, a metal layer provided on the interlayer insulating film for absorbing or blocking hydrogen, and a main electrode provided on the metal layer and electrically connected to the silicon carbide semiconductor structure.

Abstract: In producing a MOS silicon carbide semiconductor device, after a first heat treatment (oxynitride) is performed in an oxidation atmosphere including nitrous oxide or nitric oxide, a second heat treatment including hydrogen is performed, whereby in the front surface of a SiC epitaxial substrate, a gate insulating film is formed. A gate electrode is formed and after an interlayer insulating film is formed, a third heat treatment is performed to bake the interlayer insulating film. After contact metal formation, a fourth heat treatment is performed to form a reactive layer of contact metal and the silicon carbide semiconductor. The third and fourth heat treatments are performed in an inert gas atmosphere of nitrogen, helium, argon, etc., and a manufacturing method of a silicon carbide semiconductor device is provided achieving a normally OFF characteristic and lowered interface state density.

Abstract: A silicon carbide semiconductor device, including a silicon carbide semiconductor substrate, and an insulating film formed on a front surface of the silicon carbide semiconductor substrate. The silicon carbide semiconductor substrate has fluorine implanted therein, a concentration of which is in a range of 2×1017/cm3 to 4×1018/cm3. A method of manufacturing the silicon carbide semiconductor device includes providing a silicon carbide semiconductor substrate, forming an oxide film on a front surface of the silicon carbide semiconductor substrate, removing a portion of the oxide film to expose the silicon carbide semiconductor substrate, implanting fluorine ions in the front surface of the silicon carbide semiconductor substrate through the removed portion of the oxide film, removing the oxide film after the fluorine ions are implanted, and forming an insulating film on the front surface of the silicon carbide semiconductor substrate after the oxide film is removed.

Abstract: A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate of a first conductivity type, a gate insulating film provided on a front surface of the silicon carbide semiconductor substrate and including any one or a plurality of an oxide film, a nitride film, and an oxynitride film, and a gate electrode containing poly-silicon and provided on the gate insulating film. A concentration of fluorine in the gate insulating film at an interface with the silicon carbide semiconductor substrate is equal to or higher than 1×1019 atoms/cm3.

Abstract: An infrared ray absorbing film is selectively formed on a surface of a silicon carbide semiconductor substrate in a predetermined area. The infrared ray absorbing film is composed of one of a multi-layered film of titanium nitride and titanium, a multi-layered film of molybdenum nitride and molybdenum, a multi-layered film of tungsten nitride and tungsten, or a multi-layered film of chromium nitride and chromium. An aluminum film and a nickel film are sequentially formed in this order on the silicon carbide semiconductor substrate in an area excluding the predetermined area in which the infrared ray absorbing film is formed. The silicon carbide semiconductor substrate is thereafter heated using a rapid annealing process with a predetermined heating rate to form an electrode. The rapid annealing process converts the nickel film into a silicide and, with the aluminum film, provides an electrode having ohmic contact.

Abstract: On a silicon carbide semiconductor substrate, heat treatment is performed after one layer or two or more layers of an oxide film, a nitride film, or an oxynitride film are formed as a gate insulating film. The heat treatment after the gate insulating film is formed is performed for a given period in an atmosphere that includes H2 and H2O without including O2. As a result, hydrogen or hydroxyl groups can be segregated in a limited region that includes the interface of the silicon carbide substrate and the gate insulating film. The width of the region to which the hydrogen or hydroxyl groups is segregated is from 0.5 nm to 10 nm. In such a manner, the interface state density can be lowered and high channel mobility can be realized.

Abstract: A silicon carbide semiconductor device, including a silicon carbide semiconductor structure, an insulated gate structure including a gate insulating film contacting the silicon carbide semiconductor structure and a gate electrode formed on the gate insulating film, an interlayer insulating film covering the insulated gate structure, a metal layer provided on the interlayer insulating film for absorbing or blocking hydrogen, and a main electrode provided on the metal layer and electrically connected to the silicon carbide semiconductor structure.

Abstract: A method of manufacturing a silicon carbide semiconductor device includes forming on a front surface of a silicon carbide substrate of a first conductivity type, a silicon carbide layer of the first conductivity type of a lower concentration; selectively forming a region of a second conductivity type in a surface portion of the silicon carbide layer; selectively forming a source region of the first conductivity type in the region; forming a source electrode electrically connected to the source region; forming a gate insulating film on a surface of the region between the silicon carbide layer and the source region; forming a gate electrode on the gate insulating film; forming a drain electrode on a rear surface of the substrate; forming metal wiring comprising aluminum for the device, the metal wiring being connected to the source electrode; and performing low temperature nitrogen annealing after the metal wiring is formed.

Abstract: A silicon carbide vertical MOSFET having low ON-resistance and high blocking voltage is provided. For this, a first deposition film (2) of low concentration silicon carbide of a first conductivity type is formed on the surface of a high concentration silicon carbide substrate (1) of a first conductivity type. Formed on the first deposition film (2) is a second deposition film (31) that comprises a high concentration gate region of a second conductivity type, with a first region removed selectively. A third deposition film (32) formed on the second deposition film, which comprises a second region that is wider than the selectively removed first region, a high concentration source region (5) of a first conductivity type and a low concentration gate region (11) of a second conductivity type. A low concentration base region (4) of a first conductivity type is formed in contact with the first deposition film (2) in the first and second regions.