Patents by Inventor Mitsuro Tanabe
Mitsuro Tanabe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230332290Abstract: According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including a nozzle arranged along an inner wall surface of a process vessel and provided at least in a lower portion of the process vessel with a gap between the nozzle and the inner wall surface of the process vessel; a nozzle base supporting the nozzle and accommodating therein a flow path communicating with the nozzle; a support structure provided along the inner wall surface and joined to a first joint surface of the nozzle base that does not face the inner wall surface; and a tilt-adjusting structure for adjusting a tilt of the nozzle base at a position shifted toward a center of the process vessel and away from a center of gravity of a nozzle assembly comprising the nozzle and the nozzle base.Type: ApplicationFiled: June 19, 2023Publication date: October 19, 2023Applicant: Kokusai Electric CorporationInventors: Hironori SHIMADA, Mitsuro TANABE, Toru KAGAYA, Sadao HISAKADO, Hidekazu KANASUGI
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Patent number: 10978310Abstract: Described herein is a technique capable of improving a quality of a substrate processing. According to one aspect of the technique described herein, there is provided a method of manufacturing a semiconductor device including: (a) receiving substrate data including at least one of a stacked number of layers of a device formed on a substrate and a structure of the device; (b) setting an apparatus parameter corresponding to the substrate data; (c) supporting the substrate corresponding to the substrate data above a substrate support; (d) elevating a temperature of the substrate based on the apparatus parameter while the substrate is separated from a surface of the substrate support; (e) placing the substrate on the substrate support after (d); and (f) processing the substrate in a process chamber.Type: GrantFiled: March 6, 2019Date of Patent: April 13, 2021Assignee: Kokusai Electric CorporationInventors: Tsukasa Kamakura, Mitsuro Tanabe, Naofumi Ohashi, Eisuke Nishitani, Tadashi Takasaki, Shun Matsui
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Publication number: 20190295854Abstract: Described herein is a technique capable of improving a quality of a substrate processing. According to one aspect of the technique described herein, there is provided a method of manufacturing a semiconductor device including: (a) receiving substrate data including at least one of a stacked number of layers of a device formed on a substrate and a structure of the device; (b) setting an apparatus parameter corresponding to the substrate data; (c) supporting the substrate corresponding to the substrate data above a substrate support; (d) elevating a temperature of the substrate based on the apparatus parameter while the substrate is separated from a surface of the substrate support; (e) placing the substrate on the substrate support after (d); and (f) processing the substrate in a process chamber.Type: ApplicationFiled: March 6, 2019Publication date: September 26, 2019Inventors: Tsukasa KAMAKURA, Mitsuro TANABE, Naofumi OHASHI, Eisuke NISHITANI, Tadashi TAKASAKI, Shun MATSUI
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Patent number: 9518321Abstract: Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a substrate processing apparatus comprises a chamber lid assembly including a first heating member, a susceptor positioned proximal to the chamber lid assembly, wherein the susceptor includes a second heating member for heating the substrate, a process chamber accommodating at least the chamber lid assembly and the susceptor and a controller configured to control the first heating member so as to refrain the conduction of heat energy generated by the second heating member from the susceptor to the chamber lid assembly.Type: GrantFiled: September 11, 2014Date of Patent: December 13, 2016Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Mitsuro Tanabe, Yoshihiko Yanagisawa, Kazuhiro Yuasa, Masanori Sakai, Yasutoshi Tsubota
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Publication number: 20160032457Abstract: Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a substrate processing apparatus comprises a chamber lid assembly including a first heating member, a susceptor positioned proximal to the chamber lid assembly, wherein the susceptor includes a second heating member for heating the substrate, a process chamber accommodating at least the chamber lid assembly and the susceptor and a controller configured to control the first heating member so as to refrain the conduction of heat energy generated by the second heating member from the susceptor to the chamber lid assembly.Type: ApplicationFiled: September 11, 2014Publication date: February 4, 2016Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Mitsuro TANABE, Yoshihiko YANAGISAWA, Kazuhiro YUASA, Masanori SAKAI, Yasutoshi TSUBOTA
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Patent number: 8367566Abstract: A substrate processing apparatus having a processing chamber for processing a substrate; a processing gas feeding line for feeding a processing gas into the processing chamber; an inert gas feeding line for feeding an inert gas into the processing chamber; an inert gas vent line provided in the inert gas feeding line, for exhausting the inert gas fed into the inert gas feeding line without feeding the inert gas into the processing chamber; a first valve provided in the inert gas feeding line, on a downstream side of a part where the inert gas vent line is provided in the inert gas feeding line; a second valve provided in the inert gas vent line; and an exhaust line that exhausts an inside of the processing chamber.Type: GrantFiled: July 12, 2012Date of Patent: February 5, 2013Assignee: Hitachi Kokusai Electric Inc.Inventors: Atsushi Sano, Hideharu Itatani, Mitsuro Tanabe
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Publication number: 20120276751Abstract: A substrate processing apparatus having a processing chamber for processing a substrate; a processing gas feeding line for feeding a processing gas into the processing chamber; an inert gas feeding line for feeding an inert gas into the processing chamber; an inert gas vent line provided in the inert gas feeding line, for exhausting the inert gas fed into the inert gas feeding line without feeding the inert gas into the processing chamber; a first valve provided in the inert gas feeding line, on a downstream side of a part where the inert gas vent line is provided in the inert gas feeding line; a second valve provided in the inert gas vent line; and an exhaust line that exhausts an inside of the processing chamber.Type: ApplicationFiled: July 12, 2012Publication date: November 1, 2012Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Atsushi SANO, Hideharu ITATANI, Mitsuro TANABE
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Patent number: 8235001Abstract: A substrate processing apparatus and a method for manufacturing a semiconductor device whereby foreign matter can be prevented from being adsorbed on the substrate, by suppressing agitation of foreign matter present in the processing chamber. The substrate processing apparatus comprises a processing chamber for processing a substrate; a processing gas feeding line for feeding a processing gas into the processing chamber; an inert gas feeding line for feeding an inert gas into the processing chamber; an inert gas vent line provided in the inert gas feeding line, for exhausting the inert gas fed into the inert gas feeding line without feeding the inert gas into the processing chamber; a first valve provided in the inert gas feeding line, on a downstream side of a part where the inert gas vent line is provided in the inert gas feeding line; a second valve provided in the inert gas vent line; and an exhaust line that exhausts an inside of the processing chamber.Type: GrantFiled: March 19, 2008Date of Patent: August 7, 2012Assignee: Hitachi Kokusai Electric Inc.Inventors: Atsushi Sano, Hideharu Itatani, Mitsuro Tanabe
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Patent number: 8222161Abstract: Substrate processing of a substrate is performed in a processing chamber and the evenness in in-plane film thickness is enhanced. An exhaust unit exhausts the atmosphere in the processing chamber and a processing gas is supplied that is excited by an exciting unit. A rotational drive unit horizontally rotates a support unit that supports a mounting substrate on which the substrate is mounted; and a coolant supply/discharge unit is connected to the lower end of the support unit through a connecting unit. The substrate mounting unit has a coolant circulation path therein. The support unit includes a first coolant flow path for passing coolant through the coolant circulation path. The coolant supply/discharge unit includes a second coolant flow path. The connecting unit connects the first coolant flow path and the second coolant flow path together and is provided outside the processing chamber.Type: GrantFiled: April 18, 2011Date of Patent: July 17, 2012Assignee: Hitachi Kokusai Electric Inc.Inventors: Yoshihiko Yanagisawa, Mitsuro Tanabe, Harunobu Sakuma, Tadashi Takasaki
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Patent number: 8172950Abstract: Disclosed is a substrate processing apparatus, including: a chamber, made of a metal, to form a processing space for processing a substrate; at least one rod-like heating body to heat the substrate; and a tube body, made of a material different from that of the chamber, to accommodate the heating body therein, wherein an outer diameter of the tube body on a processing space side in a penetrating portion where the tube body penetrates a wall of the chamber is set to be smaller than an outer diameter of the tube body on an outer side of the chamber in the penetrating portion.Type: GrantFiled: November 28, 2006Date of Patent: May 8, 2012Assignee: Hitachi Kokusai Electric Inc.Inventors: Yoshihiko Yanagisawa, Mitsuro Tanabe
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Publication number: 20110192347Abstract: Substrate processing of a substrate is performed in a processing chamber and the evenness in in-plane film thickness is enhanced. An exhaust unit exhausts the atmosphere in the processing chamber and a processing gas is supplied that is excited by an exciting unit. A rotational drive unit horizontally rotates a support unit that supports a mounting substrate on which the substrate is mounted; and a coolant supply/discharge unit is connected to the lower end of the support unit through a connecting unit. The substrate mounting unit has a coolant circulation path therein. The support unit includes a first coolant flow path for passing coolant through the coolant circulation path. The coolant supply/discharge unit includes a second coolant flow path. The connecting unit connects the first coolant flow path and the second coolant flow path together and is provided outside the processing chamber.Type: ApplicationFiled: April 18, 2011Publication date: August 11, 2011Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Yoshihiko YANAGISAWA, Mitsuro TANABE, Harunobu SAKUMA, Tadashi TAKASAKI
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Patent number: 7943528Abstract: Substrate processing of a substrate is performed in a processing chamber and the evenness in in-plane film thickness is enhanced. An exhaust unit exhausts the atmosphere in the processing chamber and a processing gas is supplied that is excited by an exciting unit. A rotational drive unit horizontally rotates a support unit that supports a mounting substrate on which the substrate is mounted; and a coolant supply/discharge unit is connected to the lower end of the support unit through a connecting unit. The substrate mounting unit has a coolant circulation path therein. The support unit includes a first coolant flow path for passing coolant through the coolant circulation path. The coolant supply/discharge unit includes a second coolant flow path. The connecting unit connects the first coolant flow path and the second coolant flow path together and is provided outside the processing chamber.Type: GrantFiled: August 25, 2010Date of Patent: May 17, 2011Assignee: Hitachi Kokusai Electric Inc.Inventors: Yoshihiko Yanagisawa, Mitsuro Tanabe, Harunobu Sakuma, Tadashi Takasaki
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Publication number: 20110053382Abstract: Substrate processing of a substrate is performed in a processing chamber and the evenness in in-plane film thickness is enhanced. An exhaust unit exhausts the atmosphere in the processing chamber and a processing gas is supplied that is excited by an exciting unit. A rotational drive unit horizontally rotates a support unit that supports a mounting substrate on which the substrate is mounted; and a coolant supply/discharge unit is connected to the lower end of the support unit through a connecting unit. The substrate mounting unit has a coolant circulation path therein. The support unit includes a first coolant flow path for passing coolant through the coolant circulation path. The coolant supply/discharge unit includes a second coolant flow path. The connecting unit connects the first coolant flow path and the second coolant flow path together and is provided outside the processing chamber.Type: ApplicationFiled: August 25, 2010Publication date: March 3, 2011Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Yoshihiko YANAGISAWA, Mitsuro TANABE, Harunobu SAKUMA, Tadashi TAKASAKI
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Publication number: 20090017641Abstract: Disclosed is a substrate processing apparatus, including: a chamber, made of a metal, to form a processing space for processing a substrate; at least one rod-like heating body to heat the substrate; and a tube body, made of a material different from that of the chamber, to accommodate the heating body therein, wherein an outer diameter of the tube body on a processing space side in a penetrating portion where the tube body penetrates a wall of the chamber is set to be smaller than an outer diameter of the tube body on an outer side of the chamber in the penetrating portion.Type: ApplicationFiled: November 28, 2006Publication date: January 15, 2009Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Yoshihiko Yanagisawa, Mitsuro Tanabe
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Publication number: 20080264337Abstract: A substrate processing apparatus and a method for manufacturing a semiconductor device whereby foreign matter can be prevented from being adsorbed on the substrate, by suppressing agitation of foreign matter present in the processing chamber. The substrate processing apparatus comprises a processing chamber for processing a substrate; a processing gas feeding line for feeding a processing gas into the processing chamber; an inert gas feeding line for feeding an inert gas into the processing chamber; an inert gas vent line provided in the inert gas feeding line, for exhausting the inert gas fed into the inert gas feeding line without feeding the inert gas into the processing chamber; a first valve provided in the inert gas feeding line, on a downstream side of a part where the inert gas vent line is provided in the inert gas feeding line; a second valve provided in the inert gas vent line; and an exhaust line that exhausts an inside of the processing chamber.Type: ApplicationFiled: March 19, 2008Publication date: October 30, 2008Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Atsushi Sano, Hideharu Itatani, Mitsuro Tanabe