Patents by Inventor Mitsutoshi Narukawa
Mitsutoshi Narukawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9724665Abstract: An apparatus for producing trichlorosilane in which metallurgical grade silicon powder supplied to a reactor is reacted with hydrogen chloride gas while being fluidized by the hydrogen chloride gas, thereby discharging trichlorosilane generated by the reaction from the reactor, includes: a plurality of gas flow controlling members which are installed along a vertical direction in an annular shape R from an inner peripheral wall of the reactor in an internal space of the reactor; and a heat transfer tube which is installed along the vertical direction in the annular space R and through which a heating medium passes.Type: GrantFiled: March 7, 2012Date of Patent: August 8, 2017Assignee: MITSUBISHI MATERIALS CORPORATIONInventor: Mitsutoshi Narukawa
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Patent number: 8828345Abstract: This method for manufacturing trichlorosilane, includes: reacting metallurgical grade silicon with silicon tetrachloride and hydrogen so as to obtain a reaction gas; condensing the reaction gas so as to obtain a condensate; and distilling the condensate using a distillation system including a first distillation column and a secondary distillation column so as to refine trichlorosilane. While maintaining the condensate in a high temperature state so that a concentration of aluminum chloride in the condensate becomes in a range of a saturation solubility or less, the condensate flows to the first distillation column. A liquid distilled in the first distillation column is distilled by the secondary distillation column so as to refine trichlorosilane. A liquid in which aluminum chloride is concentrated is extracted from a bottom portion of the first distillation column. The extracted liquid is concentrated and dried, and then aluminum chloride is exhausted.Type: GrantFiled: June 26, 2012Date of Patent: September 9, 2014Assignee: Mitsubishi Materials CorporationInventor: Mitsutoshi Narukawa
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Patent number: 8551439Abstract: A method of refining carbon parts for the production of polycrystalline silicon, comprises the steps of, replacing an inside gas of a reactor, in which the carbon parts are placed, with an inert gas, drying the carbon parts by raising a temperature in the reactor to a drying temperature of the carbon parts while flowing an inert gas through the reactor, raising a temperature in the reactor to a purification temperature higher than the drying temperature while flowing chlorine gas through the reactor, reducing a pressure in the reactor, maintaining the inside of the reactor in a reduced pressure, pressurizing the inside of the reactor by introducing chlorine gas for bringing the inside of the reactor into a pressurized state, and cooling the inside of the reactor.Type: GrantFiled: September 15, 2009Date of Patent: October 8, 2013Assignee: Mitsubishi Materials CorporationInventors: Mitsutoshi Narukawa, Kenichi Watabe
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Publication number: 20130004404Abstract: This method for manufacturing trichlorosilane, includes: reacting metallurgical grade silicon with silicon tetrachloride and hydrogen so as to obtain a reaction gas; condensing the reaction gas so as to obtain a condensate; and distilling the condensate using a distillation system including a first distillation column and a secondary distillation column so as to refine trichlorosilane. While maintaining the condensate in a high temperature state so that a concentration of aluminum chloride in the condensate becomes in a range of a saturation solubility or less, the condensate flows to the first distillation column. A liquid distilled in the first distillation column is distilled by the secondary distillation column so as to refine trichlorosilane. A liquid in which aluminum chloride is concentrated is extracted from a bottom portion of the first distillation column. The extracted liquid is concentrated and dried, and then aluminum chloride is exhausted.Type: ApplicationFiled: June 26, 2012Publication date: January 3, 2013Applicant: MITSUBISHI MATERIALS CORPORATIONInventor: Mitsutoshi Narukawa
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Patent number: 8252241Abstract: An apparatus for producing trichlorosilane in which metallurgical grade silicon powder supplied to a reactor is reacted with hydrogen chloride gas while being fluidized by the hydrogen chloride gas, thereby discharging trichlorosilane generated by the reaction from the reactor, includes: a plurality of gas flow controlling members which are installed along a vertical direction in an annular shape R from an inner peripheral wall of the reactor in an internal space of the reactor; and a heat transfer tube which is installed along the vertical direction in the annular space R and through which a heating medium passes.Type: GrantFiled: January 19, 2010Date of Patent: August 28, 2012Assignee: Mitsubishi Materials CorporationInventor: Mitsutoshi Narukawa
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Patent number: 8221691Abstract: An apparatus for producing trichlorosilane includes a reaction container in which a supply gas containing silicon tetrachloride and hydrogen is supplied therein and a reaction product gas containing trichlorosilane and hydrogen chloride is produced; a heat transfer body which is filled in the reaction container, which is formed of a material having a melting point of at least higher than 1,400° C., and which has a void part which enables a gas to be passed; and a heating mechanism heating the heat transfer body in the reaction container.Type: GrantFiled: October 25, 2007Date of Patent: July 17, 2012Assignees: Mitsubishi Materials Corporation, Denki Kagaku Kogyo Kabushiki KaishaInventors: Mitsutoshi Narukawa, Yuji Shimizu
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Publication number: 20120164053Abstract: An apparatus for producing trichlorosilane in which metallurgical grade silicon powder supplied to a reactor is reacted with hydrogen chloride gas while being fluidized by the hydrogen chloride gas, thereby discharging trichlorosilane generated by the reaction from the reactor, includes: a plurality of gas flow controlling members which are installed along a vertical direction in an annular shape R from an inner peripheral wall of the reactor in an internal space of the reactor; and a heat transfer tube which is installed along the vertical direction in the annular space R and through which a heating medium passes.Type: ApplicationFiled: March 7, 2012Publication date: June 28, 2012Applicant: MITSUBISHI MATERIALS CORPORATIONInventor: Mitsutoshi NARUKAWA
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Patent number: 8101131Abstract: Aluminum chloride from a gas containing chlorosilanes produced in a chlorination reactor is effectively removed. A container 1 is filled with sodium chloride and heated by a heating device 17, a gas containing chlorosilanes produced by a reaction between metallurgical grade silicon and hydrogen chloride passes through the sodium chloride layer 16 to generate a double salt of aluminum chloride contained in the gas and the sodium chloride, and the gas from which the double salt is separated is recovered from a gas recovery tube 26.Type: GrantFiled: March 20, 2009Date of Patent: January 24, 2012Assignee: Mitsubishi Materials CorporationInventors: Teruhisa Kitagawa, Mitsutoshi Narukawa, Chikara Inaba
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Publication number: 20100183496Abstract: An apparatus for producing trichlorosilane in which metallurgical grade silicon powder supplied to a reactor is reacted with hydrogen chloride gas while being fluidized by the hydrogen chloride gas, thereby discharging trichlorosilane generated by the reaction from the reactor, includes: a plurality of gas flow controlling members which are installed along a vertical direction in an annular shape R from an inner peripheral wall of the reactor in an internal space of the reactor; and a heat transfer tube which is installed along the vertical direction in the annular space R and through which a heating medium passes.Type: ApplicationFiled: January 19, 2010Publication date: July 22, 2010Applicant: MITSUBISHI MATERIALS CORPORATIONInventor: Mitsutoshi Narukawa
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Publication number: 20100068125Abstract: A method of refining carbon parts for the production of polycrystalline silicon, comprises the steps of, replacing an inside gas of a reactor, in which the carbon parts are placed, with an inert gas, drying the carbon parts by raising a temperature in the reactor to a drying temperature of the carbon parts while flowing an inert gas through the reactor, raising a temperature in the reactor to a purification temperature higher than the drying temperature while flowing chlorine gas through the reactor, reducing a pressure in the reactor, maintaining the inside of the reactor in a reduced pressure, pressurizing the inside of the reactor by introducing chlorine gas for bringing the inside of the reactor into a pressurized state, and cooling the inside of the reactor.Type: ApplicationFiled: September 15, 2009Publication date: March 18, 2010Applicant: MITSUBISHI MATERIALS CORPORATIONInventors: Mitsutoshi Narukawa, Kenichi Watabe
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Publication number: 20100061901Abstract: An apparatus for producing trichlorosilane includes a reaction container in which a supply gas containing silicon tetrachloride and hydrogen is supplied therein and a reaction product gas containing trichlorosilane and hydrogen chloride is produced; a heat transfer body which is filled in the reaction container, which is formed of a material having a melting point of at least higher than 1,400° C., and which has a void part which enables a gas to be passed; and a heating mechanism heating the heat transfer body in the reaction container.Type: ApplicationFiled: October 25, 2007Publication date: March 11, 2010Applicant: Mitsubishi Materials CorporationInventors: Mitsutoshi Narukawa, Yuji Shimizu
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Publication number: 20090238748Abstract: Aluminum chloride from a gas containing chlorosilanes produced in a chlorination reactor is effectively removed. A container 1 is filled with sodium chloride and heated by a heating device 17, a gas containing chlorosilanes produced by a reaction between metallurgical grade silicon and hydrogen chloride passes through the sodium chloride layer 16 to generate a double salt of aluminum chloride contained in the gas and the sodium chloride, and the gas from which the double salt is separated is recovered from a gas recovery tube 26.Type: ApplicationFiled: March 20, 2009Publication date: September 24, 2009Applicant: MITSUBISHI MATERIALS CORPORATIONInventors: Teruhisa Kitagawa, Mitsutoshi Narukawa, Chikara Inaba
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Patent number: 6846473Abstract: A process for producing hexachlorodisilane comprising, condensing an exhaust gas discharged from a reactor for producing polycrystalline silicon from a chlorosilane and hydrogen to separate the hydrogen, distilling the resultant condensate to separate the unreacted chlorosilane and by-product silicon tetrachloride, and then further distilling to recover hexachlorodisilane, wherein tetrachlorodisilane can be recovered together with the hexachlorodisilane, and the hexachlorodisilane and tetrachlorodisilane recovered have a far higher purity than the conventional ones produced from metallic silicon.Type: GrantFiled: April 2, 2002Date of Patent: January 25, 2005Assignee: Mitsubishi Materials Polycrystalline Silicon CorporationInventors: Seiichi Kirii, Mitsutoshi Narukawa, Hisayuki Takesue
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Publication number: 20030147798Abstract: A process for producing hexachlorodisilane comprising, condensing an exhaust gas discharged from a reactor for producing polycrystalline silicon from a chlorosilane and hydrogen to separate the hydrogen, distilling the resultant condensate to separate the unreacted chlorosilane and by-product silicon tetrachloride, and then further distilling to recover hexachlorodisilane, wherein tetrachlorodisilane can be recovered together with the hexachlorodisilane, and the hexachlorodisilane and tetrachlorodisilane recovered have a far higher purity than the conventional ones produced from metallic silicon.Type: ApplicationFiled: April 2, 2002Publication date: August 7, 2003Applicant: MITSUBISHI MATERIALS CORP.Inventors: Seiichi Kirii, Mitsutoshi Narukawa, Hisayuki Takesue
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Patent number: 5346557Abstract: In a process for cleaning a silicon mass with a acid washing solution, a waste solution containing a mixed acid composed of nitric acid and hydrofluoric acid is introduced to a distillation step, and hydrofluoric acid is introduced to a distillation cooling portion to prevent precipitation of silicon dioxide. The waste cleaning liquor is distilled to recover nitric acid.Type: GrantFiled: October 28, 1992Date of Patent: September 13, 1994Assignee: Hi-Silicon, Co., Ltd.Inventors: Hideo Ito, Mitsutoshi Narukawa, Kazuhiro Sakai