Patents by Inventor Mitsutoshi Narukawa

Mitsutoshi Narukawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9724665
    Abstract: An apparatus for producing trichlorosilane in which metallurgical grade silicon powder supplied to a reactor is reacted with hydrogen chloride gas while being fluidized by the hydrogen chloride gas, thereby discharging trichlorosilane generated by the reaction from the reactor, includes: a plurality of gas flow controlling members which are installed along a vertical direction in an annular shape R from an inner peripheral wall of the reactor in an internal space of the reactor; and a heat transfer tube which is installed along the vertical direction in the annular space R and through which a heating medium passes.
    Type: Grant
    Filed: March 7, 2012
    Date of Patent: August 8, 2017
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventor: Mitsutoshi Narukawa
  • Patent number: 8828345
    Abstract: This method for manufacturing trichlorosilane, includes: reacting metallurgical grade silicon with silicon tetrachloride and hydrogen so as to obtain a reaction gas; condensing the reaction gas so as to obtain a condensate; and distilling the condensate using a distillation system including a first distillation column and a secondary distillation column so as to refine trichlorosilane. While maintaining the condensate in a high temperature state so that a concentration of aluminum chloride in the condensate becomes in a range of a saturation solubility or less, the condensate flows to the first distillation column. A liquid distilled in the first distillation column is distilled by the secondary distillation column so as to refine trichlorosilane. A liquid in which aluminum chloride is concentrated is extracted from a bottom portion of the first distillation column. The extracted liquid is concentrated and dried, and then aluminum chloride is exhausted.
    Type: Grant
    Filed: June 26, 2012
    Date of Patent: September 9, 2014
    Assignee: Mitsubishi Materials Corporation
    Inventor: Mitsutoshi Narukawa
  • Patent number: 8551439
    Abstract: A method of refining carbon parts for the production of polycrystalline silicon, comprises the steps of, replacing an inside gas of a reactor, in which the carbon parts are placed, with an inert gas, drying the carbon parts by raising a temperature in the reactor to a drying temperature of the carbon parts while flowing an inert gas through the reactor, raising a temperature in the reactor to a purification temperature higher than the drying temperature while flowing chlorine gas through the reactor, reducing a pressure in the reactor, maintaining the inside of the reactor in a reduced pressure, pressurizing the inside of the reactor by introducing chlorine gas for bringing the inside of the reactor into a pressurized state, and cooling the inside of the reactor.
    Type: Grant
    Filed: September 15, 2009
    Date of Patent: October 8, 2013
    Assignee: Mitsubishi Materials Corporation
    Inventors: Mitsutoshi Narukawa, Kenichi Watabe
  • Publication number: 20130004404
    Abstract: This method for manufacturing trichlorosilane, includes: reacting metallurgical grade silicon with silicon tetrachloride and hydrogen so as to obtain a reaction gas; condensing the reaction gas so as to obtain a condensate; and distilling the condensate using a distillation system including a first distillation column and a secondary distillation column so as to refine trichlorosilane. While maintaining the condensate in a high temperature state so that a concentration of aluminum chloride in the condensate becomes in a range of a saturation solubility or less, the condensate flows to the first distillation column. A liquid distilled in the first distillation column is distilled by the secondary distillation column so as to refine trichlorosilane. A liquid in which aluminum chloride is concentrated is extracted from a bottom portion of the first distillation column. The extracted liquid is concentrated and dried, and then aluminum chloride is exhausted.
    Type: Application
    Filed: June 26, 2012
    Publication date: January 3, 2013
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventor: Mitsutoshi Narukawa
  • Patent number: 8252241
    Abstract: An apparatus for producing trichlorosilane in which metallurgical grade silicon powder supplied to a reactor is reacted with hydrogen chloride gas while being fluidized by the hydrogen chloride gas, thereby discharging trichlorosilane generated by the reaction from the reactor, includes: a plurality of gas flow controlling members which are installed along a vertical direction in an annular shape R from an inner peripheral wall of the reactor in an internal space of the reactor; and a heat transfer tube which is installed along the vertical direction in the annular space R and through which a heating medium passes.
    Type: Grant
    Filed: January 19, 2010
    Date of Patent: August 28, 2012
    Assignee: Mitsubishi Materials Corporation
    Inventor: Mitsutoshi Narukawa
  • Patent number: 8221691
    Abstract: An apparatus for producing trichlorosilane includes a reaction container in which a supply gas containing silicon tetrachloride and hydrogen is supplied therein and a reaction product gas containing trichlorosilane and hydrogen chloride is produced; a heat transfer body which is filled in the reaction container, which is formed of a material having a melting point of at least higher than 1,400° C., and which has a void part which enables a gas to be passed; and a heating mechanism heating the heat transfer body in the reaction container.
    Type: Grant
    Filed: October 25, 2007
    Date of Patent: July 17, 2012
    Assignees: Mitsubishi Materials Corporation, Denki Kagaku Kogyo Kabushiki Kaisha
    Inventors: Mitsutoshi Narukawa, Yuji Shimizu
  • Publication number: 20120164053
    Abstract: An apparatus for producing trichlorosilane in which metallurgical grade silicon powder supplied to a reactor is reacted with hydrogen chloride gas while being fluidized by the hydrogen chloride gas, thereby discharging trichlorosilane generated by the reaction from the reactor, includes: a plurality of gas flow controlling members which are installed along a vertical direction in an annular shape R from an inner peripheral wall of the reactor in an internal space of the reactor; and a heat transfer tube which is installed along the vertical direction in the annular space R and through which a heating medium passes.
    Type: Application
    Filed: March 7, 2012
    Publication date: June 28, 2012
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventor: Mitsutoshi NARUKAWA
  • Patent number: 8101131
    Abstract: Aluminum chloride from a gas containing chlorosilanes produced in a chlorination reactor is effectively removed. A container 1 is filled with sodium chloride and heated by a heating device 17, a gas containing chlorosilanes produced by a reaction between metallurgical grade silicon and hydrogen chloride passes through the sodium chloride layer 16 to generate a double salt of aluminum chloride contained in the gas and the sodium chloride, and the gas from which the double salt is separated is recovered from a gas recovery tube 26.
    Type: Grant
    Filed: March 20, 2009
    Date of Patent: January 24, 2012
    Assignee: Mitsubishi Materials Corporation
    Inventors: Teruhisa Kitagawa, Mitsutoshi Narukawa, Chikara Inaba
  • Publication number: 20100183496
    Abstract: An apparatus for producing trichlorosilane in which metallurgical grade silicon powder supplied to a reactor is reacted with hydrogen chloride gas while being fluidized by the hydrogen chloride gas, thereby discharging trichlorosilane generated by the reaction from the reactor, includes: a plurality of gas flow controlling members which are installed along a vertical direction in an annular shape R from an inner peripheral wall of the reactor in an internal space of the reactor; and a heat transfer tube which is installed along the vertical direction in the annular space R and through which a heating medium passes.
    Type: Application
    Filed: January 19, 2010
    Publication date: July 22, 2010
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventor: Mitsutoshi Narukawa
  • Publication number: 20100068125
    Abstract: A method of refining carbon parts for the production of polycrystalline silicon, comprises the steps of, replacing an inside gas of a reactor, in which the carbon parts are placed, with an inert gas, drying the carbon parts by raising a temperature in the reactor to a drying temperature of the carbon parts while flowing an inert gas through the reactor, raising a temperature in the reactor to a purification temperature higher than the drying temperature while flowing chlorine gas through the reactor, reducing a pressure in the reactor, maintaining the inside of the reactor in a reduced pressure, pressurizing the inside of the reactor by introducing chlorine gas for bringing the inside of the reactor into a pressurized state, and cooling the inside of the reactor.
    Type: Application
    Filed: September 15, 2009
    Publication date: March 18, 2010
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Mitsutoshi Narukawa, Kenichi Watabe
  • Publication number: 20100061901
    Abstract: An apparatus for producing trichlorosilane includes a reaction container in which a supply gas containing silicon tetrachloride and hydrogen is supplied therein and a reaction product gas containing trichlorosilane and hydrogen chloride is produced; a heat transfer body which is filled in the reaction container, which is formed of a material having a melting point of at least higher than 1,400° C., and which has a void part which enables a gas to be passed; and a heating mechanism heating the heat transfer body in the reaction container.
    Type: Application
    Filed: October 25, 2007
    Publication date: March 11, 2010
    Applicant: Mitsubishi Materials Corporation
    Inventors: Mitsutoshi Narukawa, Yuji Shimizu
  • Publication number: 20090238748
    Abstract: Aluminum chloride from a gas containing chlorosilanes produced in a chlorination reactor is effectively removed. A container 1 is filled with sodium chloride and heated by a heating device 17, a gas containing chlorosilanes produced by a reaction between metallurgical grade silicon and hydrogen chloride passes through the sodium chloride layer 16 to generate a double salt of aluminum chloride contained in the gas and the sodium chloride, and the gas from which the double salt is separated is recovered from a gas recovery tube 26.
    Type: Application
    Filed: March 20, 2009
    Publication date: September 24, 2009
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Teruhisa Kitagawa, Mitsutoshi Narukawa, Chikara Inaba
  • Patent number: 6846473
    Abstract: A process for producing hexachlorodisilane comprising, condensing an exhaust gas discharged from a reactor for producing polycrystalline silicon from a chlorosilane and hydrogen to separate the hydrogen, distilling the resultant condensate to separate the unreacted chlorosilane and by-product silicon tetrachloride, and then further distilling to recover hexachlorodisilane, wherein tetrachlorodisilane can be recovered together with the hexachlorodisilane, and the hexachlorodisilane and tetrachlorodisilane recovered have a far higher purity than the conventional ones produced from metallic silicon.
    Type: Grant
    Filed: April 2, 2002
    Date of Patent: January 25, 2005
    Assignee: Mitsubishi Materials Polycrystalline Silicon Corporation
    Inventors: Seiichi Kirii, Mitsutoshi Narukawa, Hisayuki Takesue
  • Publication number: 20030147798
    Abstract: A process for producing hexachlorodisilane comprising, condensing an exhaust gas discharged from a reactor for producing polycrystalline silicon from a chlorosilane and hydrogen to separate the hydrogen, distilling the resultant condensate to separate the unreacted chlorosilane and by-product silicon tetrachloride, and then further distilling to recover hexachlorodisilane, wherein tetrachlorodisilane can be recovered together with the hexachlorodisilane, and the hexachlorodisilane and tetrachlorodisilane recovered have a far higher purity than the conventional ones produced from metallic silicon.
    Type: Application
    Filed: April 2, 2002
    Publication date: August 7, 2003
    Applicant: MITSUBISHI MATERIALS CORP.
    Inventors: Seiichi Kirii, Mitsutoshi Narukawa, Hisayuki Takesue
  • Patent number: 5346557
    Abstract: In a process for cleaning a silicon mass with a acid washing solution, a waste solution containing a mixed acid composed of nitric acid and hydrofluoric acid is introduced to a distillation step, and hydrofluoric acid is introduced to a distillation cooling portion to prevent precipitation of silicon dioxide. The waste cleaning liquor is distilled to recover nitric acid.
    Type: Grant
    Filed: October 28, 1992
    Date of Patent: September 13, 1994
    Assignee: Hi-Silicon, Co., Ltd.
    Inventors: Hideo Ito, Mitsutoshi Narukawa, Kazuhiro Sakai