Abstract: Ultrasonic flaw detection uses a phased-array ultrasonic-flaw-detection probe. The flaw detection probe is placed such that the center of curvature of the flaw detection probe coincides with a reference center of curvature of a subject. The flaw detection probe is translated along a scan direction. The flaw detection probe emits an ultrasonic beam such that the position upon which the ultrasonic beam converges coincides with the center of curvature of the curve of the outline of the cross section of the subject at the scan position, receives the resulting reflected beam, and estimates the length of a flaw in the circumferential direction of the subject. In addition, the estimated length of the flaw is corrected using a correction coefficient corresponding to the distance between the center of curvature of the reference scan position and the center of curvature of the scan position in the thickness direction of the subject.

Abstract: A decrease in the detection accuracy of infrared rays is suppressed. Vehicle glass includes a light shielding region in which a far-infrared ray transmitting region is formed, the far-infrared ray transmitting region including an opening and a far-infrared ray transmitting member (20) disposed in the opening. In the far-infrared ray transmitting member (20), the average transmittance of far-infrared rays having wavelengths of 8 ?m to 13 ?m at a first position (P1) in a case where the far-infrared rays are emitted in a direction perpendicular to a surface (20a) on a vehicle exterior side is different from the average transmittance of the far-infrared rays having wavelengths of 8 ?m to 13 ?m at a second position (P2) that is lower than the first position (P1) in the vertical direction in a case where the vehicle glass is mounted to a vehicle.

Abstract: To appropriately transmit far-infrared rays while ensuring design. A far-infrared ray transmission member (20) includes a base material (30) configured to transmit far-infrared rays, and a functional film (31) formed on the base material (30). Dispersion of reflectances with respect to pieces of light at a wavelength of 360 nm to 830 nm in increments of 1 nm is equal to or smaller than 30, a reflectance with respect to visible light defined by JIS R3106 is equal to or lower than 25%, and an average transmittance with respect to light at a wavelength of 8 ?m to 12 ?m is equal to or higher than 50%.

Abstract: According to an embodiment, a photodetection element includes a photoelectric conversion layer having a density increasing from one end side to another end side in a thickness direction and a uniform composition in the thickness direction to convert energy of radiation into charges.

Abstract: According to one embodiment, a radiation detector includes a stacked body. The stacked body includes a first metal layer, a second metal layer, and an organic semiconductor layer provided between the first metal layer and the second metal layer.

Abstract: According to an embodiment, a radiation detector includes a first scintillator, a second scintillator, and a photoelectric conversion element. The first scintillator converts radiation into light. The second scintillator converts radiation into light and has higher density than the first scintillator. The photoelectric conversion element is provided between the first scintillator and the second scintillator, and includes a photoelectric conversion layer converting light into electric charge.

Abstract: According to one embodiment, a radiation detector includes a stacked body. The stacked body includes a first scintillator layer, a first conductive layer, a second conductive layer and an organic semiconductor layer. The second conductive layer is provided between the first scintillator layer and the first conductive layer. The organic semiconductor layer is provided between the first conductive layer and the second conductive layer. The organic semiconductor layer includes a first element. The first element includes at least one selected from the group consisting of boron, gadolinium, helium, lithium, and cadmium.

Abstract: According to an embodiment, a radiation detector includes a first scintillator, a second scintillator, and a photoelectric conversion element. The first scintillator converts radiation into light. The second scintillator converts radiation into light and has higher density than the first scintillator. The photoelectric conversion element is provided between the first scintillator and the second scintillator, and includes a photoelectric conversion layer converting light into electric charge.

Abstract: According to an embodiment, a photodetector includes a first photoelectric conversion element, a second photoelectric conversion element, and an absorption layer. The first photoelectric conversion element includes a first photoelectric conversion layer for converting energy of radiation into electric charges. The second photoelectric conversion element includes a second photoelectric conversion layer for converting energy of radiation into electric charges. The absorption layer is arranged between the first photoelectric conversion element and the second photoelectric conversion element to absorb radiation having energy equal to or lower than a threshold value.

Abstract: According to one embodiment, a radiation detector includes a scintillator layer, a first conductive layer, a second conductive layer, and an organic layer. The second conductive layer is provided between the scintillator layer and the first conductive layer. The organic layer is provided between the first conductive layer and the second conductive layer. The organic layer includes an organic semiconductor region having a first thickness. The first thickness is 400 nanometers or more.

Abstract: According to one embodiment, a radiation detector includes a first conductive layer, a second conductive layer, and an intermediate layer. The intermediate layer is provided between the first conductive layer and the second conductive layer. The intermediate layer includes an organic semiconductor region and a plurality of particles. The organic semiconductor region including a portion provided around the particles. A diameter is not less than 1 nanometer and not more than 20 nanometers for at least a portion of the particles. A first bandgap energy of the plurality of particles is larger than a second bandgap energy of the organic semiconductor region.

Abstract: According to one embodiment, a radiation detector includes a first conductive layer, a second conductive layer, and an intermediate layer. The intermediate layer is provided between the first and second conductive layers. The intermediate layer includes an organic semiconductor region and a plurality of particles. The organic semiconductor region includes a portion provided around the particles. The organic semiconductor region includes first and second semiconductor regions. The first semiconductor region has a first highest occupied molecular orbital and a first lowest unoccupied molecular orbital. The second semiconductor region has a second highest occupied molecular orbital and a second lowest unoccupied molecular orbital. The particles have a third highest occupied molecular orbital and a third lowest unoccupied molecular orbital. The first highest occupied molecular orbital is lower than the third highest occupied molecular orbital.

Abstract: According to one embodiment, a radiation detector includes a first conductive layer, a second conductive layer, and an intermediate layer. The intermediate layer is provided between the first and second conductive layers. The intermediate layer includes an organic semiconductor region and a plurality of particles. The organic semiconductor region includes a portion provided around the particles. The organic semiconductor region includes first and second semiconductor regions. The first semiconductor region has a first highest occupied molecular orbital and a first lowest unoccupied molecular orbital. The second semiconductor region has a second highest occupied molecular orbital and a second lowest unoccupied molecular orbital. The particles have a third highest occupied molecular orbital and a third lowest unoccupied molecular orbital. The first highest occupied molecular orbital is lower than the third highest occupied molecular orbital.

Abstract: According to one embodiment, a radiation detector includes a first conductive layer, a second conductive layer, and an intermediate layer. The intermediate layer is provided between the first conductive layer and the second conductive layer. The intermediate layer includes an organic semiconductor region and a plurality of particles. The organic semiconductor region including a portion provided around the particles. A diameter is not less than 1 nanometer and not more than 20 nanometers for at least a portion of the particles. A first bandgap energy of the plurality of particles is larger than a second bandgap energy of the organic semiconductor region.

Abstract: According to an embodiment, a photodetection element includes a photoelectric conversion layer having a density increasing from one end side to another end side in a thickness direction and a uniform composition in the thickness direction to convert energy of radiation into charges.

Abstract: According to one embodiment, a radiation detector includes a stacked body. The stacked body includes a first metal layer, a second metal layer, and an organic semiconductor layer provided between the first metal layer and the second metal layer.

Abstract: According to an embodiment, a photodetector includes a first photoelectric conversion element, a second photoelectric conversion element, and an absorption layer. The first photoelectric conversion element includes a first photoelectric conversion layer for converting energy of radiation into electric charges. The second photoelectric conversion element includes a second photoelectric conversion layer for converting energy of radiation into electric charges. The absorption layer is arranged between the first photoelectric conversion element and the second photoelectric conversion element to absorb radiation having energy equal to or lower than a threshold value.

Abstract: A method of manufacturing a radiation detector according to an embodiment includes: forming a plurality of scintillator array columns, each of the scintillator array columns being formed by preparing a scintillator member that a thickness being smaller than a length and a width, the scintillator member having a first face, a second face, a third face, and a fourth face, and being cut from the third face along the second direction to form at least a groove that penetrates from the first face to the second face but does not reach the fourth face to have an uncut portion near the fourth face; stacking the scintillator array columns in the first direction with a space between each of adjacent two scintillator array columns, and filling a spacer material into the space; inserting a reflector into each space and each groove; and cutting the uncut portion.

Abstract: According to one embodiment, a radiation detector includes a stacked body. The stacked body includes a first scintillator layer, a first conductive layer, a second conductive layer and an organic semiconductor layer. The second conductive layer is provided between the first scintillator layer and the first conductive layer. The organic semiconductor layer is provided between the first conductive layer and the second conductive layer. The organic semiconductor layer includes a first element. The first element includes at least one selected from the group consisting of boron, gadolinium, helium, lithium, and cadmium.

Abstract: According to one embodiment, a radiation detector includes a scintillator layer, a first conductive layer, a second conductive layer, and an organic layer. The second conductive layer is provided between the scintillator layer and the first conductive layer. The organic layer is provided between the first conductive layer and the second conductive layer. The organic layer includes an organic semiconductor region having a first thickness. The first thickness is 400 nanometers or more.