Abstract: A structure according to an embodiment of the present disclosure include: a first base; a second base disposed to be opposed to the first base; and a bonding layer that is provided between the first base and the second base, and includes, in a layer, a layer including a first metal element and a second metal element, the first metal element having a free energy of oxide formation (?G) of ?330 (kJ/mol of compounds) or more at room temperature and a self-diffusion coefficient (D) of 1×10?55 (m2/s) or more at room temperature, and the second metal element having a free energy of oxide formation (?G) at room temperature smaller than the free energy of oxide formation (?G) at the room temperature of the first metal element.

Abstract: Substrates that are bonding targets are bonded in ambient atmosphere via bonding films, including oxides, formed on bonding faces of the substrates. The bonding films, which are metal or semiconductor thin films formed by vacuum film deposition and at least the surfaces of which are oxidized, are formed into the respective smooth faces of two substrates having the smooth faces that serve as the bonding faces. The bonding films are exposed to a space that contains moisture, and the two substrates are overlapped in the ambient atmosphere such that the surfaces of the bonding films are made to be hydrophilic and the surfaces of the bonding films contact one another. Through this, a chemical bond is generated at the bonded interface, and thereby the two substrates are bonded together in the ambient atmosphere. The bonding strength ? can be improved by heating the bonded substrates at a temperature.

Abstract: There is provided a functional element that includes a first substrate, a second substrate disposed to face the first substrate, and a buffer layer provided between the first substrate and the second substrate. The buffer layer has, in a layer thereof, a distribution of concentration of a metallic element. The distribution changes in a film thickness direction.

Abstract: Atomic diffusion bonding is carried out using a bonding film comprising a nitride formed at a bonding surface. Operating in a vacuum chamber, a bonding film comprising a nitride is formed on each of flat surfaces of two substrates that each have the flat surface, and, by overlapping the two substrates so the bonding films formed on the two substrates are in contact with each other, the two substrates are joined by the generation of atomic diffusion at a bonding interface between the bonding films.

Abstract: Substrates that are bonding targets are bonded in ambient atmosphere via bonding films, including oxides, formed on bonding faces of the substrates. The bonding films, which are metal or semiconductor thin films formed by vacuum film deposition and at least the surfaces of which are oxidized, are formed into the respective smooth faces of two substrates having the smooth faces that serve as the bonding faces. The bonding films are exposed to a space that contains moisture, and the two substrates are overlapped in the ambient atmosphere such that the surfaces of the bonding films are made to be hydrophilic and the surfaces of the bonding films contact one another. Through this, a chemical bond is generated at the bonded interface, and thereby the two substrates are bonded together in the ambient atmosphere. The bonding strength ? can be improved by heating the bonded substrates at a temperature.

Abstract: This method for producing a structure wherein base materials are bonded by atomic diffusion comprises: a step for applying a liquid resin on the base material; a step for smoothing the surface of the liquid resin by surface tension; a step for forming a resin layer by curing; a step for forming a metal thin film on the resin layer; a step for forming a metal thin film on the base material; and a step for bringing the metal thin film of the base material and the metal thin film of the base material into close contact with each other, thereby bonding the metal thin film of the resin layer and the metal thin film of the base material with each other by atomic diffusion.

Abstract: A bonded structure includes a first substrate; a second substrate placed opposite to the first substrate; an intermediate layer provided between the first substrate and the second substrate and including a first oxide thin film layered on the first substrate and a second oxide thin film layered on the second substrate; either or both of the first oxide thin film and the second oxide thin film of the intermediate layer being formed of oxide thin films having increased defects; and an interface between the first oxide thin film and the second oxide thin film=being bonded by chemical bonding, and the interface comprising a low-density portion whose density is lower than that of the two oxide thin films.

Abstract: A bonded structure includes a first substrate; a second substrate placed opposite to the first substrate; an intermediate layer provided between the first substrate and the second substrate and including a first oxide thin film layered on the first substrate and a second oxide thin film layered on the second substrate; either or both of the first oxide thin film and the second oxide thin film of the intermediate layer being formed of oxide thin films having increased defects; and an interface between the first oxide thin film and the second oxide thin film=being bonded by chemical bonding, and the interface comprising a low-density portion whose density is lower than that of the two oxide thin films.

Abstract: The present invention achieves chemical bonding by means of a joined film made of oxides formed on a joined surface. In a vacuum container, amorphous oxide thin films are respectively formed on smooth surfaces of two substrates, and the two substrates overlap such that the amorphous oxide thin films formed on the two substrates come into contact with each other, thereby causing chemical bonding involving an atomic diffusion at a joined interface between the amorphous oxide thin films to join the two substrates.

Abstract: A structure body according to an embodiment of the present disclosure includes: a first base having one surface, and having a density lower than a density that is determined by a crystal structure and a composition of a constituent material; a second base disposed to face the one surface of the first base; and a buffer layer provided between the first base and the second base, and containing at least a metal element.

Abstract: A structure according to an embodiment of the present disclosure includes: a first substrate; a second substrate opposed to the first substrate; a bonding layer provided between the first substrate and the second substrate; and a first decorative layer provided between the first substrate and the second substrate.

Abstract: Provided is a bonding method for directly bonding an electrode part of a chip component to a bonding part provided on a substrate that is a bonding target, the method comprising: a step for placing the substrate on a stage inside a liquid vessel; a step for injecting liquid into the liquid vessel; and a step for bonding the electrode part of the chip component to the bonding part (electrode part) of the bonding target by superimposing the chip component held by a bonding head in the liquid stored in the liquid vessel over the bonding target and then applying pressure thereto.

Abstract: A functional element according to an embodiment of the present disclosure includes: a first substrate; a second substrate disposed to face the first substrate; and a buffer layer provided between the first substrate and the second substrate. The buffer layer has, in a layer thereof, a distribution of concentration of a metallic element. The distribution changes in a film thickness direction.

Abstract: This method for producing a structure wherein base materials are bonded by atomic diffusion comprises: a step for applying a liquid resin on the base material; a step for smoothing the surface of the liquid resin by surface tension; a step for forming a resin layer by curing; a step for forming a metal thin film on the resin layer; a step for forming a metal thin film on the base material; and a step for bringing the metal thin film of the base material and the metal thin film of the base material into close contact with each other, thereby bonding the metal thin film of the resin layer and the metal thin film of the base material with each other by atomic diffusion

Abstract: Provided is a bonding method for directly bonding an electrode part of a chip component to a bonding part provided on a substrate that is a bonding target, the method comprising: a step for placing the substrate on a stage inside a liquid vessel; a step for injecting liquid into the liquid vessel; and a step for bonding the electrode part of the chip component to the bonding part (electrode part) of the bonding target by superimposing the chip component held by a bonding head in the liquid stored in the liquid vessel over the bonding target and then applying pressure thereto.