Abstract: A gate electrode rectangular in section is formed by patterning on a GaAs substrate as a compound substrate having a channel layer. Subsequently, a specific metal, e.g., Ti is deposited. A solid-phase reaction layer to serve as source/drain is formed in a self-alignment manner with the gate electrode by a thermal treatment. The part of the Ti film which has not been reacted is then removed. Thus the source/drain (or at least one of them) are very easily formed to a shallow junction depth without using any ion implantation process. Realized is a semiconductor device showing an excellent device characteristics, capable of suppressing occurrence of short-channel effect even in its shortened gate length for reducing the device size.

Abstract: A semiconductor triode comprises a gate electrode provided on a channel layer, wherein there is interposed an insulating metal oxide layer between a top surface of the channel layer and the gate electrode.

Abstract: A gate electrode rectangular in section is formed by patterning on a GaAs substrate as a compound substrate having a channel layer. Subsequently, a specific metal, e.g., Ti is deposited. A solid-phase reaction layer to serve as source/drain is formed in a self-alignment manner with the gate electrode by a thermal treatment. The part of the Ti film which has not been reacted is then removed. Thus the source/drain (or at least one of them) are very easily formed to a shallow junction depth without using any ion implantation process. Realized is a semiconductor device showing an excellent device characteristics, capable of suppressing occurrence of short-channel effect even in its shortened gate length for reducing the device size.