Patents by Inventor Mizunori Ezaki

Mizunori Ezaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10186838
    Abstract: According to one embodiment, a semiconductor light-emitting element includes a ring-shaped light-emitting portion provided on a substrate, a mode-control light waveguide of Si provided on an upper or a lower surface side of the light-emitting portion, and including at least two portions located close to the light-emitting portion, and an output light waveguide of Si provided on the upper or the lower surface side, and including a portion located close to the light-emitting portion. The mode-control light waveguide has a structure for coupling light traveling in one of a clockwise circulating mode and a counterclockwise circulating mode, and feeding back the light in the other of the clockwise circulating mode and the counterclockwise circulating mode.
    Type: Grant
    Filed: February 28, 2017
    Date of Patent: January 22, 2019
    Assignees: KABUSHIKI KAISHA TOSHIBA, Photonics Electronics Technology Research Association
    Inventors: Hirotaka Uemura, Haruhiko Yoshida, Kazuya Ohira, Mizunori Ezaki, Norio Iizuka
  • Patent number: 10103514
    Abstract: A semiconductor light-emitting device according to one embodiment includes a substrate, a first light reflection structure provided in contact with the substrate, a buried layer surrounding the first light reflection structure, an optical semiconductor structure including an active layer, provided above the first light reflection structure, a second light reflection structure provided above the optical semiconductor structure, and a pair of electrodes which supply current to the optical semiconductor structure. The surface of the first light reflection structure and the surface of the buried layer are included in the same plane.
    Type: Grant
    Filed: March 14, 2016
    Date of Patent: October 16, 2018
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Kazuya Ohira, Mizunori Ezaki, Hirotaka Uemura, Haruhiko Yoshida, Norio Ilzuka, Hideto Furuyama
  • Publication number: 20180102456
    Abstract: According to one embodiment, a semiconductor optical device including a substrate, a filter layer arranged on the substrate, and a semiconductor light receiving element arranged on the filter layer, wherein the filter layer includes a periodic structure through which a light of a desired wavelength range in incident light is transmitted, and which is constituted of different refractive index materials.
    Type: Application
    Filed: August 31, 2017
    Publication date: April 12, 2018
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Hirotaka Uemura, Mizunori Ezaki, Kazuya Ohira, Norio Iizuka, Haruhiko Yoshida
  • Patent number: 9755097
    Abstract: According to one embodiment, a semiconductor photoreceiving device includes a substrate, a first structural layer provided on the substrate, in which light enters from the substrate side and in which a refractive index changes periodically, a semiconductor layer provided on the first structural layer and including an optical absorption layer, a reflective layer provided on the semiconductor layer, and a pair of electrodes configured to apply voltage to the optical absorption layer.
    Type: Grant
    Filed: March 11, 2016
    Date of Patent: September 5, 2017
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Haruhiko Yoshida, Kazuya Ohira, Mizunori Ezaki
  • Publication number: 20170170630
    Abstract: According to one embodiment, a semiconductor light-emitting element includes a ring-shaped light-emitting portion provided on a substrate, a mode-control light waveguide of Si provided on an upper or a lower surface side of the light-emitting portion, and including at least two portions located close to the light-emitting portion, and an output light waveguide of Si provided on the upper or the lower surface side, and including a portion located close to the light-emitting portion. The mode-control light waveguide has a structure for coupling light traveling in one of a clockwise circulating mode and a counterclockwise circulating mode, and feeding back the light in the other of the clockwise circulating mode and the counterclockwise circulating mode.
    Type: Application
    Filed: February 28, 2017
    Publication date: June 15, 2017
    Applicants: KABUSHIKI KAISHA TOSHIBA, Photonics Electronics Technology Research Association
    Inventors: Hirotaka UEMURA, Haruhiko YOSHIDA, Kazuya OHIRA, Mizunori EZAKI, Norio IIZUKA
  • Patent number: 9594215
    Abstract: According to one embodiment, a semiconductor light-receiving element, includes a light-receiving part provided on a substrate and having a semiconductor multilayer structure of a circular outer shape, a optical input part formed of a peripheral portion of the semiconductor multilayer structure, and having a tapered front end, and a silicon-thin-line waveguide configured to couple light with the optical input part. The waveguide includes a linear part extending through the optical input part to an at least one area of an upper-side area and a lower-side area of the light-receiving part, and a spiral part connected to the linear part and formed in the at least one area.
    Type: Grant
    Filed: September 10, 2015
    Date of Patent: March 14, 2017
    Assignees: KABUSHIKI KAISHA TOSHIBA, Photonics Electronics Technology Research Association
    Inventors: Haruhiko Yoshida, Kazuya Ohira, Mizunori Ezaki
  • Publication number: 20160276806
    Abstract: A semiconductor light-emitting device according to one embodiment includes a substrate, a first light reflection structure provided in contact with the substrate, a buried layer surrounding the first light reflection structure, an optical semiconductor structure including an active layer, provided above the first light reflection structure, a second light reflection structure provided above the optical semiconductor structure, and a pair of electrodes which supply current to the optical semiconductor structure. The surface of the first light reflection structure and the surface of the buried layer are included in the same plane.
    Type: Application
    Filed: March 14, 2016
    Publication date: September 22, 2016
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Kazuya OHIRA, Mizunori Ezaki, Hirotaka Uemura, Haruhiko Yoshida, Norio IIzuka, Hideto Furuyama
  • Publication number: 20160276517
    Abstract: According to one embodiment, a semiconductor photoreceiving device includes a substrate, a first structural layer provided on the substrate, in which light enters from the substrate side and in which a refractive index changes periodically, a semiconductor layer provided on the first structural layer and including an optical absorption layer, a reflective layer provided on the semiconductor layer, and a pair of electrodes configured to apply voltage to the optical absorption layer.
    Type: Application
    Filed: March 11, 2016
    Publication date: September 22, 2016
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Haruhiko YOSHIDA, Kazuya OHIRA, Mizunori EZAKI
  • Patent number: 9341776
    Abstract: An optical interconnection device includes a light-emitting element, a light-receiving element, and an optical waveguide. Both the light-emitting element and the light-receiving element have a layered structure and are formed on a silicon substrate. At least a portion of the light-emitting element is embedded in an insulator. At least a portion of the light-receiving element is embedded in the insulator. The optical waveguide is formed over the insulator, and is optically coupled to the light-emitting element and the light-receiving element by distributed coupling.
    Type: Grant
    Filed: August 6, 2013
    Date of Patent: May 17, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Norio Iizuka, Kazuya Ohira, Haruhiko Yoshida, Mizunori Ezaki, Hideto Furuyama, Kentaro Kobayashi, Hiroshi Uemura
  • Patent number: 9323003
    Abstract: An optical device according to an embodiment includes a laser light source, a first optical waveguide that propagates light being output from the laser light source, a first distribution device that distribute the light into n lights, n second optical waveguides that propagates the n lights being output from the first distribution device, n second distribution devices that distribute each of the n lights into m lights, n×m third optical waveguides arranged in a matrix form and propagates the n×m lights being output from the m second distribution devices, a control electrode that apply a voltage or current to each of the third optical waveguides, and control phase of the light propagating through the third optical waveguides, and an output end surface that output the n×m lights.
    Type: Grant
    Filed: January 28, 2014
    Date of Patent: April 26, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kazuya Ohira, Mizunori Ezaki, Nobuo Suzuki, Norio Iizuka, Haruhiko Yoshida
  • Publication number: 20160087398
    Abstract: According to one embodiment, a semiconductor light-receiving element, includes a light-receiving part provided on a substrate and having a semiconductor multilayer structure of a circular outer shape, a optical input part formed of a peripheral portion of the semiconductor multilayer structure, and having a tapered front end, and a silicon-thin-line waveguide configured to couple light with the optical input part. The waveguide includes a linear part extending through the optical input part to an at least one area of an upper-side area and a lower-side area of the light-receiving part, and a spiral part connected to the linear part and formed in the at least one area.
    Type: Application
    Filed: September 10, 2015
    Publication date: March 24, 2016
    Applicants: KABUSHIKI KAISHA TOSHIBA, Photonics Electronics Technology Research Association
    Inventors: Haruhiko YOSHIDA, Kazuya OHIRA, Mizunori EZAKI
  • Publication number: 20150268426
    Abstract: An optical wiring device of an embodiment includes a semiconductor substrate having a protruding structure, an optical device disposed on the protruding structure, an insulator disposed around the protruding structure and the optical device and a first optical waveguide optically coupled to the optical device. The insulator has a refractive index lower than a refractive index of the semiconductor substrate.
    Type: Application
    Filed: March 13, 2015
    Publication date: September 24, 2015
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Kazuya OHIRA, Norio IIZUKA, Haruhiko Yoshida, Mizunori Ezaki, Hideto Furuyama
  • Patent number: 9008473
    Abstract: An optical transmission-reception system includes: a light-emitting element having a first semiconductor multilayer structure with a ring- or disk-like shape and generating a first optical signal and a second optical signal rotating in a direction opposite to the first optical signal; a first optical waveguide optically coupled with the light-emitting element and propagating the first optical signal; a second optical waveguide optically coupled with the light-emitting element and propagating the second optical signal; and a light-receiving element having a second semiconductor multilayer structure with a ring- or disk-like shape, optically coupled with the first and second optical waveguides, and optically receiving the first and second optical signals.
    Type: Grant
    Filed: December 3, 2012
    Date of Patent: April 14, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Haruhiko Yoshida, Kazuya Ohira, Mizunori Ezaki
  • Publication number: 20150034968
    Abstract: A photoelectric conversion element of an embodiment is a photoelectric conversion element which performs photoelectric conversion by receiving illumination light having n light emission peaks having a peak energy Ap (eV) (where 1?p?n and 2?n) of 1.59?Ap?3.26 and a full width at half maximum Fp (eV) (where 1?p?n and 2?n), wherein the photoelectric conversion element includes m photoelectric conversion layers having a band gap energy Bq (eV) (where 1?q?m and 2?m?n), and the m photoelectric conversion layers each satisfy the relationship of Ap?Fp<Bq?Ap with respect to any one of the n light emission peaks.
    Type: Application
    Filed: October 17, 2014
    Publication date: February 5, 2015
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Shinji SAITO, Rei HASHIMOTO, Mizunori EZAKI, Shinya NUNOUE, Hironori ASAI
  • Patent number: 8896076
    Abstract: A photoelectric conversion element of an embodiment is a photoelectric conversion element which performs photoelectric conversion by receiving illumination light having n light emission peaks having a peak energy Ap (eV) (where 1?p?n and 2?n) of 1.59?Ap?3.26 and a full width at half maximum Fp (eV) (where 1?p?n and 2?n), wherein the photoelectric conversion element includes m photoelectric conversion layers having a band gap energy Bq (eV) (where 1?q?m and 2?m?n), and the m photoelectric conversion layers each satisfy the relationship of Ap?Fp<Bq?Ap with respect to any one of the n light emission peaks.
    Type: Grant
    Filed: July 29, 2013
    Date of Patent: November 25, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Shinji Saito, Rei Hashimoto, Mizunori Ezaki, Shinya Nunoue, Hironori Asai
  • Patent number: 8885685
    Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer and a laser resonator. The first semiconductor layer includes a first portion and a second portion juxtaposed with the first portion. The laser resonator is provided on the first portion and has a ring-shaped resonator structure circled along a major surface of the first semiconductor layer. The second portion guides light emitted from the laser resonator.
    Type: Grant
    Filed: September 28, 2011
    Date of Patent: November 11, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kazuya Ohira, Haruhiko Yoshida, Mizunori Ezaki
  • Patent number: 8855163
    Abstract: An optical semiconductor device of one embodiment includes: a first semiconductor layer of a first conductivity type; an active layer provided on the first semiconductor layer and has a ring- or disk-like shape; a second semiconductor layer of a second conductivity type that is provided on the active layer and has a ring- or disk-like shape; a first electrode provided on the first semiconductor layer; and a second electrode provided on the second semiconductor layer. The first semiconductor layer includes a first region having a ring- or disk-like shape, and a second region provided around the outer circumference of the first region and has a smaller thickness than the first region. The first electrode is provided on the second region, and a groove or holes are provided in a portion of the second region located between the first region and the first electrode.
    Type: Grant
    Filed: December 18, 2013
    Date of Patent: October 7, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Haruhiko Yoshida, Kazuya Ohira, Mizunori Ezaki
  • Publication number: 20140212088
    Abstract: An optical device according to an embodiment includes a laser light source, a first optical waveguide that propagates light being output from the laser light source, a first distribution device that distribute the light into n lights, n second optical waveguides that propagates the n lights being output from the first distribution device, n second distribution devices that distribute each of the n lights into m lights, n×m third optical waveguides arranged in a matrix form and propagates the n×m lights being output from the m second distribution devices, a control electrode that apply a voltage or current to each of the third optical waveguides, and control phase of the light propagating through the third optical waveguides, and an output end surface that output the n×m lights.
    Type: Application
    Filed: January 28, 2014
    Publication date: July 31, 2014
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Kazuya OHIRA, Mizunori EZAKI, Nobuo SUZUKI, Norio IIZUKA, Haruhiko YOSHIDA
  • Publication number: 20140185641
    Abstract: An optical semiconductor device of one embodiment includes: a first semiconductor layer of a first conductivity type; an active layer provided on the first semiconductor layer and has a ring- or disk-like shape; a second semiconductor layer of a second conductivity type that is provided on the active layer and has a ring- or disk-like shape; a first electrode provided on the first semiconductor layer; and a second electrode provided on the second semiconductor layer. The first semiconductor layer includes a first region having a ring- or disk-like shape, and a second region provided around the outer circumference of the first region and has a smaller thickness than the first region. The first electrode is provided on the second region, and a groove or holes are provided in a portion of the second region located between the first region and the first electrode.
    Type: Application
    Filed: December 18, 2013
    Publication date: July 3, 2014
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Haruhiko YOSHIDA, Kazuya OHIRA, Mizunori EZAKI
  • Patent number: 8699830
    Abstract: An optical modulation device of an embodiment includes: a first p-type semiconductor region; a first n-type semiconductor region; a first low-impurity-density semiconductor region formed between the first p-type semiconductor region and the first n-type semiconductor region; a second n-type semiconductor region formed on an outer side of the first p-type semiconductor region via a second low-impurity-density semiconductor region; and a second p-type semiconductor region formed on an outer side of the first n-type semiconductor region via a third low-impurity-density semiconductor region. The carrier density in the first low-impurity-density semiconductor region is changed by current injection. The phase of light propagated through an optical waveguide structure that includes at least part of the first low-impurity-density semiconductor region is modulated.
    Type: Grant
    Filed: March 30, 2011
    Date of Patent: April 15, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Mizunori Ezaki, Nobuo Suzuki