Patents by Inventor Mohammad D. Al-Amri

Mohammad D. Al-Amri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10317342
    Abstract: Novel and advantageous systems and methods for performing nanometer-scale microscopy using graphene plasmons (GPs) are provided. Sub-diffraction microscopy can be achieved, taking advantage of the extremely small plasmon wavelength and low dissipation of GPs. Nanometer-scale resolution can be obtained under very weak light intensity, which is especially important in the imaging of biological systems.
    Type: Grant
    Filed: July 1, 2016
    Date of Patent: June 11, 2019
    Assignees: The Texas A&M University System, The National Centre for Applied Physics, KACST
    Inventors: Muhammad Suhail Zubairy, Mohammad D. Al-Amri, Xiaodong Zeng
  • Publication number: 20170003223
    Abstract: Novel and advantageous systems and methods for performing nanometer-scale microscopy using graphene plasmons (GPs) are provided. Sub-diffraction microscopy can be achieved, taking advantage of the extremely small plasmon wavelength and low dissipation of GPs. Nanometer-scale resolution can be obtained under very weak light intensity, which is especially important in the imaging of biological systems.
    Type: Application
    Filed: July 1, 2016
    Publication date: January 5, 2017
    Inventors: Muhammad Suhail Zubairy, Mohammad D. Al-Amri, Xiaodong Zeng
  • Patent number: 9182348
    Abstract: The resonance fluorescence spectrum of a number of two-level atoms is driven by a gradient coherent laser field. In the weak dipole-dipole interaction region (separation less than ?/50), a very strong laser field may be applied such that the Rabi frequency is much larger than the dipole-dipole interaction energy. From the spectrum, the positions of each atom may be determined by just a few measurements. This sub-wavelength microscopy scheme is entirely based on far-field technique and it does not require point-by-point scanning, which makes the method more time-efficient. When two atoms are very close to each other (less than ?/50), the position information for each atom may still be obtained with very high accuracy provided that they are not too close to other atoms. The method may be extended to an arbitrarily large region without requiring more peak laser power and only a few measurements are required.
    Type: Grant
    Filed: February 8, 2013
    Date of Patent: November 10, 2015
    Assignees: The Texas A&M University System, King Absulaziz City for Science and Technology
    Inventors: Muhammad Suhail Zubairy, Zeyang Liao, Mohammad D. Al-Amri
  • Patent number: 8891767
    Abstract: It has long been assumed in physics that for information to travel in empty space between two parties (the Sender and the Receiver), “physically real” entities have to travel between the parties. The recently discovered technique of interaction-free measurement—wherein the presence of an object is inferred without the object directly interacting with the interrogating light—has caused this basic assumption to be questioned. This technique has found application in quantum key distribution in the form of counterfactual quantum key distribution—albeit with limited efficiency. In the present invention, using the “chained” quantum Zeno effect, this logic is taken to its natural conclusion and, in the ideal limit, information can be transferred between the Sender and the Receiver without any physical particles whatsoever traveling between them.
    Type: Grant
    Filed: December 21, 2012
    Date of Patent: November 18, 2014
    Assignee: Texas A&M University System
    Inventors: Muhammad Suhail Zubairy, Zhenghong Li, Mohammad D. Al-Amri, Hatim A. Salih
  • Publication number: 20140225004
    Abstract: The resonance fluorescence spectrum of a number of two-level atoms is driven by a gradient coherent laser field. In the weak dipole-dipole interaction region (separation less than ?/50), a very strong laser field may be applied such that the Rabi frequency is much larger than the dipole-dipole interaction energy. From the spectrum, the positions of each atom may be determined by just a few measurements. This sub-wavelength microscopy scheme is entirely based on far-field technique and it does not require point-by-point scanning, which makes the method more time-efficient. When two atoms are very close to each other (less than ?/50), the position information for each atom may still be obtained with very high accuracy provided that they are not too close to other atoms. The method may be extended to an arbitrarily large region without requiring more peak laser power and only a few measurements are required.
    Type: Application
    Filed: February 8, 2013
    Publication date: August 14, 2014
    Applicants: KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY, THE TEXAS A&M UNIVERSITY SYSTEM
    Inventors: Muhammad Suhail Zubairy, Zeyang Liao, Mohammad D. Al-Amri
  • Publication number: 20140177837
    Abstract: It has long been assumed in physics that for information to travel in empty space between two parties (the Sender and the Receiver), “physically real” entities have to travel between the parties. The recently discovered technique of interaction-free measurement—wherein the presence of an object is inferred without the object directly interacting with the interrogating light—has caused this basic assumption to be questioned. This technique has found application in quantum key distribution in the form of counterfactual quantum key distribution albeit with limited efficiency. In the present invention, using the “chained” quantum Zeno effect, this logic is taken to its natural conclusion and, in the ideal limit, information can be transferred between the Sender and the Receiver without any physical particles whatsoever traveling between them.
    Type: Application
    Filed: December 21, 2012
    Publication date: June 26, 2014
    Applicants: KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY, THE TEXAS A&M UNIVERSITY SYSTEM
    Inventors: Muhammad Suhail Zubairy, Zhenghong Li, Mohammad D. Al-Amri, Hatim A. Salih
  • Patent number: 8574824
    Abstract: A sub-wavelength photolithographic method includes exposing a photoresist material to a stimulating electromagnetic source prior to further exposing the photoresist material to a dissociating electromagnetic source. The stimulating electromagnetic source induces Rabi oscillations in the photoresist material between a first molecular state and an excited molecular state. The subsequent exposure of the photoresist material to the dissociating electromagnetic source dissociates only those molecules that are in the excited state, altering the properties of the photoresist material in zones of excited state molecules. The resulting patterns therefore depend on the spatial distribution of the zones of excited state molecules induced by the stimulating electromagnetic source. The properties of the stimulating electromagnetic source are controlled to achieve a desired spatial distribution of zones of excited state molecules of the photoresist material.
    Type: Grant
    Filed: May 7, 2013
    Date of Patent: November 5, 2013
    Assignees: The Texas A&M University System, King Abdulaziz City for Science and Technoloy
    Inventors: Muhammad Suhail Zubairy, Zeyang Liao, Mohammad D. Al-Amri
  • Patent number: 8541164
    Abstract: A sub-wavelength photolithographic method includes exposing a photoresist material to a stimulating electromagnetic source prior to further exposing the photoresist material to a dissociating electromagnetic source. The stimulating electromagnetic source induces Rabi oscillations in the photoresist material between a first molecular state and an excited molecular state. The subsequent exposure of the photoresist material to the dissociating electromagnetic source dissociates only those molecules that are in the excited state, altering the properties of the photoresist material in zones of excited state molecules. The resulting patterns therefore depend on the spatial distribution of the zones of excited state molecules induced by the stimulating electromagnetic source. The properties of the stimulating electromagnetic source are controlled to achieve a desired spatial distribution of zones of excited state molecules of the photoresist material.
    Type: Grant
    Filed: October 11, 2011
    Date of Patent: September 24, 2013
    Assignees: The Texas A&M University System, King Abdulaziz City for Science and Technology
    Inventors: Mohammad D. Al-Amri, Zeyang Liao, Muhammad Suhail Zubiary
  • Publication number: 20130244184
    Abstract: A sub-wavelength photolithographic method includes exposing a photoresist material to a stimulating electromagnetic source prior to further exposing the photoresist material to a dissociating electromagnetic source. The stimulating electromagnetic source induces Rabi oscillations in the photoresist material between a first molecular state and an excited molecular state. The subsequent exposure of the photoresist material to the dissociating electromagnetic source dissociates only those molecules that are in the excited state, altering the properties of the photoresist material in zones of excited state molecules. The resulting patterns therefore depend on the spatial distribution of the zones of excited state molecules induced by the stimulating electromagnetic source. The properties of the stimulating electromagnetic source are controlled to achieve a desired spatial distribution of zones of excited state molecules of the photoresist material.
    Type: Application
    Filed: May 7, 2013
    Publication date: September 19, 2013
    Applicants: King Abdulaziz City for Science and Technology, The Texas A&M University System
    Inventors: Muhammad Suhail Zubairy, Zeyang Liao, Mohammad D. Al-Amri
  • Publication number: 20130004899
    Abstract: A sub-wavelength photolithographic method includes exposing a photoresist material to a stimulating electromagnetic source prior to further exposing the photoresist material to a dissociating electromagnetic source. The stimulating electromagnetic source induces Rabi oscillations in the photoresist material between a first molecular state and an excited molecular state. The subsequent exposure of the photoresist material to the dissociating electromagnetic source dissociates only those molecules that are in the excited state, altering the properties of the photoresist material in zones of excited state molecules. The resulting patterns therefore depend on the spatial distribution of the zones of excited state molecules induced by the stimulating electromagnetic source. The properties of the stimulating electromagnetic source are controlled to achieve a desired spatial distribution of zones of excited state molecules of the photoresist material.
    Type: Application
    Filed: October 11, 2011
    Publication date: January 3, 2013
    Inventors: Mohammad D. Al-Amri, Zeyang Liao, Muhammad Suhail Zubairy