Patents by Inventor Mohammad T. Islam

Mohammad T. Islam has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200384603
    Abstract: The invention provides a polymer-polymer composite polishing pad useful for polishing or planarizing a substrate of at least one of semiconductor, optical and magnetic substrates. The polymer-polymer composite polishing pad includes a polishing layer having a polishing surface for polishing or planarizing the substrate; a polymeric matrix forming the polishing layer and including gas-filled or liquid-filled polymeric microelements; and fluoropolymer particles embedded in the polymeric matrix. The fluoropolymer particles have a tensile strength lower than the tensile strength of the polymeric matrix wherein diamond abrasive materials cut the fluoropolymer to form a reduced number of pad debris particles in the 1 ?m to 10 ?m size range.
    Type: Application
    Filed: June 10, 2019
    Publication date: December 10, 2020
    Inventors: Nan-Rong Chiou, Joseph So, Mohammad T. Islam, Matthew R. Gadinski, Youngrae Park, George C. Jacob
  • Publication number: 20200384600
    Abstract: The invention provides a polymer-polymer composite polishing method comprising a polishing layer having a polishing surface for polishing or planarizing a substrate. The method includes attaching a polymer-polymer composite having a polishing layer and a polymeric matrix. The polymer matrix has fluoropolymer particles embedded in the polymeric matrix. Then a cationic particle slurry is applied to the polymer-polymer composite polishing pad. Conditioning the polymer-polymer composite polishing pad with an abrasive cuts the polymer-polymer composite polishing pad; and rubbing the cut polymer-polymer composite polishing pad against the substrate forms the polishing surface. The polishing surface has a fluorine concentration measured in atomic percent at a penetration depth of 1 to 10 nm of at least ten percent higher than the bulk fluorine concentration measured with at a penetration depth of 1 to 10 ?m to polish or planarize the substrate.
    Type: Application
    Filed: June 10, 2019
    Publication date: December 10, 2020
    Inventors: Mohammad T. Islam, Nan-Rong Chiou, Matthew R. Gadinski, Youngrae Park, Gregory Scott Blackman, Lei Zhang, George C. Jacob
  • Publication number: 20200384601
    Abstract: The invention provides a polymer-polymer composite polishing pad comprising a polishing layer having a polishing surface for polishing or planarizing a substrate. A polymeric matrix forms the polishing layer. Fluoropolymer particles are embedded in the polymeric matrix. Wherein diamond abrasive materials cut the fluoropolymer particles and rubbing the cut fluoropolymer against a patterned silicon wafer forms a thin film covering at least a portion of the polishing layer and the thin film has a zeta potential more negative than the polymeric matrix at a pH of 7. The polishing surface formed from rubbing with the wafer has a fluorine concentration at a penetration depth of 1 to 10 nm of at least ten atomic percent higher than the bulk fluorine concentration at a penetration depth of 1 to 10 ?m.
    Type: Application
    Filed: June 10, 2019
    Publication date: December 10, 2020
    Inventors: Mohammad T. Islam, Nan-Rong Chiou, Matthew R. Gadinski, Youngrae Park, Gregory Scott Blackman, Lei Zhang, George C. Jacob
  • Publication number: 20200384602
    Abstract: The invention provides a method for polishing or planarizing a substrate. First, the method comprises attaching a polymer-polymer composite polishing pad to a polishing device. The polishing pad has a polymer matrix and fluoropolymer particles embedded in the polymeric matrix. The fluoropolymer particles have a zeta potential more negative than the polymeric matrix. Cationic particle-containing slurry is applied to the polishing pad. Conditioning the polymer-polymer composite polishing pad exposes the fluoropolymer particles to the polishing surface and creates fluoropolymer-containing debris particles in the slurry. Polishing or planarizing the substrate with the increased electronegativity from the fluoropolymer at the polishing surface and in the fluoropolymer-containing debris particles stabilizes the cationic particle-containing slurry to decreases the precipitation rate of the cationic particle-containing slurry.
    Type: Application
    Filed: June 10, 2019
    Publication date: December 10, 2020
    Inventors: Matthew R. Gadinski, Mohammad T. Islam, Nan-Rong Chiou, Youngrae Park, George C. Jacob
  • Patent number: 10569384
    Abstract: The present invention concerns a chemical mechanical polishing pad having a polishing layer that possesses a consistent positive zeta potential across the entire surface. Also disclosed is a chemical mechanical polishing method using the polishing pad together with a positively charged slurry.
    Type: Grant
    Filed: November 6, 2018
    Date of Patent: February 25, 2020
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Matthew R. Gadinski, Mohammad T. Islam, Yi Guo, George C. Jacob
  • Patent number: 10464188
    Abstract: The present invention concerns a chemical mechanical polishing pad having a polishing layer that possesses a consistent positive zeta potential across the entire surface. Also disclosed is a chemical mechanical polishing method using the polishing pad together with a positively charged slurry.
    Type: Grant
    Filed: November 6, 2018
    Date of Patent: November 5, 2019
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Matthew R. Gadinski, Mohammad T. Islam, Yi Guo, George C. Jacob
  • Patent number: 10293456
    Abstract: The present invention provides a chemical mechanical (CMP) polishing pad for polishing, for example, a semiconductor substrate, having one or more endpoint detection windows (windows) which at a thickness of 2 mm would have a UV cut-off at a wavelength of 325 nm or lower which are the product of a reaction mixture of (A) from 30 to 56 wt. % of one or more cycloaliphatic diisocyanates or polyisocyanates with (B) from 43 to 69.9999 a polyol mixture of (i) a polymeric diol having an average molecular weight of from 500 to 1,500, such as a polycarbonate diol for hard windows and a polyether polyol for soft windows and (ii) a triol having an average to molecular weight of from 120 to 320 in a weight ratio of (B)(i) polymeric diol to (B)(ii) triol ranging from 1.6:1 to 5.2:1, and a catalyst, preferably a secondary or tertiary amine or bismuth neodecanoate, all weight percent's based on the total solids weight of the reaction mixture.
    Type: Grant
    Filed: March 2, 2018
    Date of Patent: May 21, 2019
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Nan-Rong Chiou, Mohammad T. Islam, George C. Jacob, Teresa Brugarolas Brufau
  • Patent number: 10207388
    Abstract: The present invention provides a chemical mechanical (CMP) polishing pad for polishing, for example, a semiconductor substrate, having one or more endpoint detection windows (windows) which at a thickness of 2 mm would have a UV cut-off at a wavelength of 325 nm or lower which are the product of a reaction mixture of (A) from 30 to 56 wt. % of one or more cycloaliphatic diisocyanates or polyisocyanates with (B) from 43 to 69.9999 a polyol mixture of (i) a polymeric diol having an average molecular weight of from 500 to 1,500, such as a polycarbonate diol for hard windows and a polyether polyol for soft windows and (ii) a triol having an average molecular weight of from 120 to 320 in a weight ratio of (B)(i) polymeric diol to (B)(ii) triol ranging from 1.6:1 to 5.2:1, and a catalyst, preferably a secondary or tertiary amine, all weight percent's based on the total solids weight of the reaction mixture.
    Type: Grant
    Filed: April 19, 2017
    Date of Patent: February 19, 2019
    Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc., Dow Global Technologies LLC
    Inventors: Nan-Rong Chiou, Mohammad T. Islam, George C. Jacob
  • Publication number: 20180304439
    Abstract: The present invention provides a chemical mechanical (CMP) polishing pad for polishing, for example, a semiconductor substrate, having one or more endpoint detection windows (windows) which at a thickness of 2 mm would have a UV cut-off at a wavelength of 325 nm or lower which are the product of a reaction mixture of (A) from 30 to 56 wt. % of one or more cycloaliphatic diisocyanates or polyisocyanates with (B) from 43 to 69.9999 a polyol mixture of (i) a polymeric diol having an average molecular weight of from 500 to 1,500, such as a polycarbonate diol for hard windows and a polyether polyol for soft windows and (ii) a triol having an average to molecular weight of from 120 to 320 in a weight ratio of (B)(i) polymeric diol to (B)(ii) triol ranging from 1.6:1 to 5.2:1, and a catalyst, preferably a secondary or tertiary amine or bismuth neodecanoate, all weight percent's based on the total solids weight of the reaction mixture.
    Type: Application
    Filed: March 2, 2018
    Publication date: October 25, 2018
    Inventors: Nan-Rong Chiou, Mohammad T. Islam, George C. Jacob
  • Publication number: 20180304438
    Abstract: The present invention provides a chemical mechanical (CMP) polishing pad for polishing, for example, a semiconductor substrate, having one or more endpoint detection windows (windows) which at a thickness of 2 mm would have a UV cut-off at a wavelength of 325 nm or lower which are the product of a reaction mixture of (A) from 30 to 56 wt. % of one or more cycloaliphatic diisocyanates or polyisocyanates with (B) from 43 to 69.9999 a polyol mixture of (i) a polymeric diol having an average molecular weight of from 500 to 1,500, such as a polycarbonate diol for hard windows and a polyether polyol for soft windows and (ii) a triol having an average molecular weight of from 120 to 320 in a weight ratio of (B)(i) polymeric diol to (B)(ii) triol ranging from 1.6:1 to 5.2:1, and a catalyst, preferably a secondary or tertiary amine, all weight percent's based on the total solids weight of the reaction mixture.
    Type: Application
    Filed: April 19, 2017
    Publication date: October 25, 2018
    Inventors: Nan-Rong Chiou, Mohammad T. Islam, George C. Jacob
  • Patent number: 10086494
    Abstract: A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising a curative and a polyisocyanate prepolymer having an unreacted isocyanate (NCO) concentration of from 8.3 to 9.8 wt. % and formed from a polyol blend of polypropylene glycol (PPG) and polytetramethylene ether glycol (PTMEG) and containing a hydrophilic portion of polyethylene glycol or ethylene oxide repeat units, a toluene diisocyanate, and one or more isocyanate extenders, wherein the polyurethane reaction product exhibits a wet Shore D hardness of from 10 to 20% less than the Shore D hardness of the dry polyurethane reaction product.
    Type: Grant
    Filed: September 13, 2016
    Date of Patent: October 2, 2018
    Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc., Dow Global Technologies LLC
    Inventors: Jonathan G. Weis, George C. Jacob, Bhawesh Kumar, Sarah E. Mastroianni, Wenjun Xu, Nan-Rong Chiou, Mohammad T. Islam
  • Publication number: 20180071888
    Abstract: A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising a curative and a polyisocyanate prepolymer having an unreacted isocyanate (NCO) concentration of from 8.3 to 9.8 wt. % and formed from a polyol blend of polypropylene glycol (PPG) and polytetramethylene ether glycol (PTMEG) and containing a hydrophilic portion of polyethylene glycol or ethylene oxide repeat units, a toluene diisocyanate, and one or more isocyanate extenders, wherein the polyurethane reaction product exhibits a wet Shore D hardness of from 10 to 20% less than the Shore D hardness of the dry polyurethane reaction product.
    Type: Application
    Filed: September 13, 2016
    Publication date: March 15, 2018
    Inventors: Jonathan G. Weis, George C. Jacob, Bhawesh Kumar, Sarah E. Mastroianni, Wenjun Xu, Nan-Rong Chiou, Mohammad T. Islam
  • Patent number: 9102034
    Abstract: A method of chemical mechanical polishing a substrate is provided, including: providing a substrate; providing a chemical mechanical polishing pad, comprising: a polishing layer having a composition and a polishing surface, wherein the composition of polishing layer is selected to exhibit an initial hydrolytic stability; coupled with a sustained hydrolytic instability; a rigid layer having a top surface and a bottom surface; a hot melt adhesive interposed between the base surface of the polishing layer and the top surface of the rigid layer; wherein the hot melt adhesive bonds the polishing layer to the rigid layer; a pressure sensitive platen adhesive layer having a stack side and a platen side; wherein the stack side of the pressure sensitive platen adhesive layer is adjacent to the bottom surface of the rigid layer; and, creating dynamic contact between the polishing surface and substrate to polish a surface of the substrate.
    Type: Grant
    Filed: August 30, 2013
    Date of Patent: August 11, 2015
    Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc., Dow Global Technologies LLC
    Inventors: Michelle Jensen, Bainian Qian, Fengji Yeh, Marty W. DeGroot, Mohammad T. Islam, Matthew Richard Van Hanehem, Darrell String, James Murnane, Jeffrey James Hendron, John G. Nowland
  • Publication number: 20150065013
    Abstract: A chemical mechanical polishing pad is provided containing: a polishing layer; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer exhibits a specific gravity of greater than 0.6; a Shore D hardness of 60 to 90; an elongation to break of 100 to 300%; and, a unique combination of an initial hydrolytic stability and a sustained hydrolytic instability.
    Type: Application
    Filed: August 30, 2013
    Publication date: March 5, 2015
    Inventors: Michelle Jensen, Bainian Qian, Fengji Yeh, Marty W. DeGroot, Mohammad T. Islam, Matthew Richard Van Hanehem, Darrell String, James Murnane, Jeffrey James Hendron, John G. Nowland
  • Publication number: 20150065014
    Abstract: A method of chemical mechanical polishing a substrate is provided, including: providing a substrate; providing a chemical mechanical polishing pad, comprising: a polishing layer having a composition and a polishing surface, wherein the composition of polishing layer is selected to exhibit an initial hydrolytic stability; coupled with a sustained hydrolytic instability; a rigid layer having a top surface and a bottom surface; a hot melt adhesive interposed between the base surface of the polishing layer and the top surface of the rigid layer; wherein the hot melt adhesive bonds the polishing layer to the rigid layer; a pressure sensitive platen adhesive layer having a stack side and a platen side; wherein the stack side of the pressure sensitive platen adhesive layer is adjacent to the bottom surface of the rigid layer; and, creating dynamic contact between the polishing surface and substrate to polish a surface of the substrate.
    Type: Application
    Filed: August 30, 2013
    Publication date: March 5, 2015
    Inventors: Michelle Jensen, Bainian Qian, Fengji Yeh, Marty W. DeGroot, Mohammad T. Islam, Matthew Richard Van Hanehem, Darrell String, James Murnane, Jeffrey James Hendron, John G. Nowland