Patents by Inventor Monroe L. King

Monroe L. King has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5177366
    Abstract: An ion beam implantation system. An ion beam is controllably deflected from an initial trajectory as it passes through spaced parallel plates that are biased by a control circuit. Once deflected, the ion beam passes through electrodes positioned along a beam travel path that both redeflect the once-deflected ion beam and accelerate the ions to a desired final energy. Ions within the beam exit the accelerator and impact a workpiece at a uniform, controlled impact angle due to ion focusing in a scanning plane and an orthogonal cross plane.
    Type: Grant
    Filed: March 6, 1992
    Date of Patent: January 5, 1993
    Assignee: Eaton Corporation
    Inventors: Monroe L. King, Jerald P. Dykstra
  • Patent number: 5091655
    Abstract: An ion beam implantation system. An ion beam is controllably deflected from an initial trajectory as it passes through spaced parallel plates that are biased by a control circuit. Once deflected, the ion beam enters an accelerator that both redeflects the once deflected ion beam and acceleratres the ions to a desired final energy. When the beam exits the accelerator it moves along a trajectory that impacts a workpiece. Ions making up the ion beam all impact the workpiece at a uniform, controlled impact angle.
    Type: Grant
    Filed: February 25, 1991
    Date of Patent: February 25, 1992
    Assignee: Eaton Corporation
    Inventors: Jerald P. Dykstra, Andrew M. Ray, Monroe L. King
  • Patent number: 4891525
    Abstract: An ion source of the side extraction type which includes auxiliary electrodes surrounding the cathode at the ends of the anode, and insulators surrounding the auxiliary electrodes and electrically isolating them from the anode. The auxiliary electrodes essentially define the ends of the discharge chamber, leaving the anode confined to the cylindrical surface surrounding the filament. Each insulator is made up of an inner insulator and an outer insulator with an annular space defined between them. The inner and outer insulators are each in the form of a cylinder with a radially extending flange formed at one end, and interfit with the anode and with each other such that cylindrical spaces are defined between the outer flange portion and the anode and between the inner and outer flange portions. These and other features contribute to improve the electrical isolation between the auxiliary electrode and the anode, prolong source life, and improve beam purity.
    Type: Grant
    Filed: November 14, 1988
    Date of Patent: January 2, 1990
    Assignee: Eaton Corporation
    Inventors: Larry E. Frisa, Monroe L. King, Stephen E. Sampayan
  • Patent number: 4760262
    Abstract: An ion source (10) of the side-extraction hot cathode type in which the inherent drift of electrons toward the positive side of the cathode is minimized by the addition of auxiliary electrodes (31, 32) which surround the cathode (14) at the ends of the anode (12). The electrodes are electrically isolated from the cathode and anode, and various means are provided to apply a potentials to the electrodes, including interconnecting the electrodes, cross-connecting the electrodes to opposite ends of the cathode, and biasing the electrodes at fixed potentials with respect to the cathode, anode or ground.
    Type: Grant
    Filed: May 12, 1987
    Date of Patent: July 26, 1988
    Assignee: Eaton Corporation
    Inventors: Stephen E. Sampayan, Monroe L. King, Robert A. Moore
  • Patent number: 4700077
    Abstract: A scanning ion beam implanter having a wafer support to control the angle of incidence between an ion beam and the wafer. The wafer support preferably bends the wafer into a segment of a cylinder. As the ion beam scans across the curved wafer surface the angle of incidence remains relatively uniform. The support also includes structure for pivoting the bent wafer about a pivot axis. The pivoting of the wafer is synchronized with the scanning of the ion beam to compensate for scanning of the ion beam in a direction transverse to the direction compensated for by the cylindrical curvature of the wafer.
    Type: Grant
    Filed: March 5, 1986
    Date of Patent: October 13, 1987
    Assignee: Eaton Corporation
    Inventors: Jerald P. Dykstra, Andrew M. Ray, Monroe L. King
  • Patent number: 4514636
    Abstract: A method and apparatus are disclosed for providing heat conduction between an article being treated in a vacuum and a support member by providing a gas under pressure of about 0.5 to 2.0 Torr between the article and the support member. The method and apparatus are described for use in a semiconductor wafer ion implantation system wherein the wafer is clamped to the support member which is cooled. A seal can be provided between the wafer and the support member adjacent the periphery of the article.
    Type: Grant
    Filed: August 13, 1984
    Date of Patent: April 30, 1985
    Assignee: Eaton Corporation
    Inventor: Monroe L. King
  • Patent number: 4261762
    Abstract: A method and apparatus are disclosed for providing heat conduction between an article being treated in a vacuum and a support member by providing a gas under pressure of about 0.5 to 2.0 Torr between the article and the support member. The method and apparatus are described for use in a semiconductor wafer ion implantation system wherein the wafer is clamped to the support member which is cooled. A seal can be provided between the wafer and the support member adjacent the periphery of the article.
    Type: Grant
    Filed: September 14, 1979
    Date of Patent: April 14, 1981
    Assignee: Eaton Corporation
    Inventor: Monroe L. King