Patents by Inventor Moshe TORDJMAN

Moshe TORDJMAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11450744
    Abstract: The present invention provides a conducting material comprising a carbon-based material selected from a diamond or an insulating diamond-like carbon, having a hydrogen-terminated surface and a layer of tungsten trioxide, rhenium trioxide, or chromium oxide coating said hydrogen-terminated surface. Such conducting materials are useful in the fabrication of electronic components, electrodes, sensors, diodes, field effect transistors, and field emission electron sources.
    Type: Grant
    Filed: September 2, 2018
    Date of Patent: September 20, 2022
    Assignee: Technion Research & Development Foundation Ltd.
    Inventors: Rafi Kalish, Moshe Tordjman
  • Publication number: 20200403067
    Abstract: The present invention provides a conducting material comprising a carbon-based material selected from a diamond or an insulating diamond-like carbon, having a hydrogen-terminated surface and a layer of tungsten trioxide, rhenium trioxide, or chromium oxide coating said hydrogen-terminated surface. Such conducting materials are useful in the fabrication of electronic components, electrodes, sensors, diodes, field effect transistors, and field emission electron sources.
    Type: Application
    Filed: September 2, 2018
    Publication date: December 24, 2020
    Applicant: Technion Research & Development Foundation Ltd.
    Inventors: Rafi KALISH, Moshe TORDJMAN
  • Patent number: 9306167
    Abstract: A field-emission device is disclosed. The device comprises a solid state structure formed of a crystalline material and an amorphous material, wherein an outer surface of the solid state structure is substantially devoid of the amorphous material, and wherein a p-type conductivity of the crystalline material is higher at or near the outer surface than far from the outer surface.
    Type: Grant
    Filed: January 17, 2013
    Date of Patent: April 5, 2016
    Assignee: Technion Research & Development Foundation Limited
    Inventors: Rafael Kalish, Moshe Tordjman
  • Patent number: 9117737
    Abstract: A conducting material includes a carbon-based material selected from a diamond or an insulating diamond-like carbon, having a hydrogen-terminated surface and a layer of MoO3 coating the surface. A method for the fabrication of such a material. The conducting material is useful in the fabrication of electronic components, electrodes, sensors, diodes, field effect transistors, and field emission electron sources.
    Type: Grant
    Filed: April 24, 2014
    Date of Patent: August 25, 2015
    Assignee: TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LTD.
    Inventors: Rafi Kalish, Moshe Tordjman
  • Publication number: 20140319542
    Abstract: The present invention provides a conducting material comprising a carbon-based material selected from a diamond or an insulating diamond-like carbon, having a hydrogen-terminated surface and a layer of MoO3 coating said surface; as well as a method for the fabrication of such a material. The conducting material of the invention is useful in the fabrication of electronic components, electrodes, sensors, diodes, field effect transistors, and field emission electron sources.
    Type: Application
    Filed: April 24, 2014
    Publication date: October 30, 2014
    Applicant: Technion Research and Development Foundation Ltd.
    Inventors: Rafi KALISH, Moshe TORDJMAN