Abstract: This invention relates to a kit or a device for the detection of stomach cancer and a method for detecting stomach cancer, and provides a kit or a device for the detection of stomach cancer, comprising a nucleic acid(s) capable of specifically binding to a miRNA(s) in a sample from a subject, and a method for detecting stomach cancer, comprising measuring the miRNA(s) in vitro.

Abstract: It is intended to provide a kit or device for the detection of liver cancer and a method for detecting liver cancer. The present invention relates to a kit or device for the detection of liver cancer, comprising a nucleic acid capable of specifically binding to miRNA in a sample of a subject, and a method for detecting liver cancer, comprising measuring the miRNA in vitro.

Abstract: This invention provides a kit or a device for the detection of pancreatic cancer, comprising a nucleic acid(s) capable of specifically binding to a miRNA(s) in a sample from a subject, and a method for detecting pancreatic cancer, comprising measuring the miRNA(s) in vitro.

Abstract: This invention provides a kit or a device for the detection of pancreatic cancer, comprising a nucleic acid(s) capable of specifically binding to a miRNA(s) in a sample from a subject, and a method for detecting pancreatic cancer, comprising measuring the miRNA(s) in vitro.

Abstract: This invention provides a kit or a device for the detection of pancreatic cancer, comprising a nucleic acid(s) capable of specifically binding to a miRNA(s) in a sample from a subject, and a method for detecting pancreatic cancer, comprising measuring the miRNA(s) in vitro.

Abstract: It is intended to provide a kit or device for the detection of liver cancer and a method for detecting liver cancer. The present invention relates to a kit or device for the detection of liver cancer, comprising a nucleic acid capable of specifically binding to miRNA in a sample of a subject, and a method for detecting liver cancer, comprising measuring the miRNA in vitro.

Abstract: It is intended to provide a kit or a device for the detection of colorectal cancer and a method for detecting colorectal cancer. The present invention provides a kit or a device for the detection of colorectal cancer, comprising a nucleic acid capable of specifically binding to a miRNA in a sample from a subject, and a method for detecting colorectal cancer, comprising measuring the miRNA in vitro.

Abstract: It is intended to provide a kit or a device for the detection of lung cancer and a method for detecting lung cancer. The present invention provides a kit or a device for the detection of lung cancer, comprising a nucleic acid capable of specifically binding to a miRNA in a sample from a subject, and a method for detecting lung cancer, comprising measuring the miRNA in vitro.

Abstract: It is intended to provide a kit or a device for the detection of esophageal cancer and a method for detecting esophageal cancer. The present invention provides a kit or a device for the detection of esophageal cancer, comprising nucleic acid(s) capable of specifically binding to miRNA(s) in a sample f a subject, and a method for detecting esophageal cancer, comprising measuring the miRNA in vitro.

Abstract: This invention relates to a kit or a device for the detection of stomach cancer and a method for detecting stomach cancer, and provides a kit or a device for the detection of stomach cancer, comprising a nucleic acid(s) capable of specifically binding to a miRNA(s) in a sample from a subject, and a method for detecting stomach cancer, comprising measuring the miRNA(s) in vitro.

Abstract: The present invention provides a kit or device for the detection of biliary tract cancer, and a method for detecting biliary tract cancer. The present invention relates to a kit or device for the detection of biliary tract cancer, comprising a nucleic acid capable of specifically binding to miRNA in a sample of a subject, and a method for detecting biliary tract cancer, comprising measuring the miRNA in vitro.

Abstract: The present invention provides a contact-type solid-state imaging apparatus which realizes high resolution and high sensitivity, and also implements downsizing and lowering the cost of the contact-type solid-state imaging apparatus. Each pixel includes a protection glass plate, a light-collecting device, a light-receiving device, a semiconductor integrated circuit, a light emitting diode (LED) and a mounting package. The light-collecting apparatus has two kinds of distributed index lens (o lens and convex lens), and Sin (N=2) film, which is a two-stage concentric structure, is embedded in SiO2 (N=1.45) film.

Abstract: The present invention provides a solid-state imaging device which compensates a field curvature which occurs due to an aberration of the optical imaging system and surely receive light incident with a wide angle. Each pixel (pixel size of 2.2 ?m square) in a solid-state imaging device includes a light-transmitting film with the first effective refractive index distribution and a light-transmitting film with the second effective refractive index distribution, a light-receiving element, a wiring, a wavelength selection filter, and a Si substrate. A pixel (1) is a pixel placed an approximate center of the solid-state imaging device. A pixel (n) is a pixel placed in the periphery of the solid-state imaging device, and a pixel (n-x) is a pixel that are placed between the pixel (1) and the pixel (n). The light-transmitting film of each pixel has approximately same effective refractive index distribution. ?0 which is a main light angle on the light-receiving element side, is approximately same.

Abstract: A plurality of pixels, each including a second conductivity-type photodiode portion 1 formed in a first conductivity-type well region and an amplifier transistor 6 for amplifying and outputting charge accumulated in the photodiode portion, are arrayed two-dimensionally. Furthermore, an intra-pixel contact 2 for providing the well region with a reference voltage is provided in the photodiode portion. With this configuration, it is possible to achieve a rational intra-pixel GND contact arrangement with which the afterimage characteristics are improved and the optical characteristics are not affected adversely.

Abstract: The present invention provides a solid-state imaging device which compensates a field curvature which occurs due to an aberration of the optical imaging system and surely receive light incident with a wide angle. Each pixel (pixel size of 2.2 ?m square) in a solid-state imaging device includes a light-transmitting film with the first effective refractive index distribution and a light-transmitting film with the second effective refractive index distribution, a light-receiving element, a wiring, a wavelength selection filter, and a Si substrate. A pixel (1) is a pixel placed an approximate center of the solid-state imaging device. A pixel (n) is a pixel placed in the periphery of the solid-state imaging device, and a pixel (n-x) is a pixel that are placed between the pixel (1) and the pixel (n). The light-transmitting film of each pixel has approximately same effective refractive index distribution. ?0, which is a main light angle on the light-receiving element side, is approximately same.

Abstract: The present invention provides a contact-type solid-state imaging apparatus which realizes high resolution and high sensitivity, and also implements downsizing and lowering the cost of the contact-type solid-state imaging apparatus. Each pixel includes a protection glass plate, a light-collecting device, a light-receiving device, a semiconductor integrated circuit, a light emitting diode (LED) and a mounting package. The light-collecting apparatus has two kinds of distributed index lens (o lens and convex lens), and Sin (N=2) film, which is a two-stage concentric structure, is embedded in SiO2 (N=1.45) film.

Abstract: A solid-state image pickup device, and in particular, a CCD image sensor is capable of color reading, wherein n lines (n.gtoreq.2) of photo diodes disposing a plurality of photodiodes straightly are disposed parallel adjacently to each other, and adjacent n lines of CCD analog shift registers are disposed parallel to the photodiode lines at one side of the group of n lines of photodiodes, and the signal charges are transferred through a gate structure composed of MOS structure, between adjacent lines of n lines of photodiodes and n lines of CCD analog shift registers. It is therefore possible to reduce the intervals of the photodiode lines to the limit, thereby realizing a CCD color linear image sensor capable of outstandingly simplifying the signal time axis correction circuit such as semiconductor digital memory device for correcting the differences of reading positions of the photodiode lines.