Abstract: In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a metal oxide film over the second insulating film; a gate electrode over the metal oxide film; and a third insulating film over the oxide semiconductor film and the gate electrode. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first transistor, a capacitor, and a second transistor stacked in this order. The first and second transistors each include a semiconductor layer, a first conductor over the semiconductor layer, a first insulator, and a second conductor over the first insulator. In each of the first and second transistors, a side surface of the semiconductor layer is aligned with a side surface of the first conductor; the semiconductor layer and the first conductor each have an opening; the first insulator is inside the opening; the first insulator has a depressed portion reflecting the shape of the opening; and a second conductor fills the depressed portion. The second conductor of the first transistor, one of a pair of electrodes of the capacitor, and the semiconductor layer of the second transistor are connected to each other.

Abstract: A document retrieval system retrieving a document with the concept of the document taken into account is provided. The system includes a processing portion and the processing portion creates a retrieval graph from a retrieval composition. The retrieval graph includes first to m-th retrieval local graphs (m is an integer of greater than or equal to 1), and the retrieval local graphs are each constituted by two nodes and one edge. The processing portion performs retrieval of first to m-th sentences on a reference document. The i-th sentence (i is an integer of greater than or equal to 1 and less than or equal to m) includes one of the two nodes in the i-th retrieval local graph or a related term or a hyponym of the one of the two nodes; the other of the two nodes in the i-th retrieval local graph or a related term or a hyponym of the other of the two nodes; and the edge in the i-th retrieval local graph or a related term or a hyponym of the edge.

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first conductor, a metal oxide over the first conductor, a second conductor over the metal oxide, a first insulator, a second insulator over the first insulator, and a third conductor over the second insulator. The first conductor includes a region overlapping with the metal oxide. The metal oxide has a first opening. The second conductor has a second opening. The first opening and the second opening overlap with each other. The first insulator is placed on the inner side of each of the first opening and the second opening. The second insulator is placed in a depressed portion of the first insulator. The third conductor is placed in a depressed portion of the second insulator.

Abstract: The impurity concentration in the oxide semiconductor film is reduced, and a highly reliability can be obtained.

Abstract: An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.

Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

Abstract: In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a metal oxide film over the second insulating film; a gate electrode over the metal oxide film; and a third insulating film over the oxide semiconductor film and the gate electrode. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.

Abstract: The impurity concentration in the oxide semiconductor film is reduced, and a highly reliability can be obtained.

Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

Abstract: The stability of a step of processing a wiring formed using copper, aluminum, gold, silver, molybdenum, or the like is increased. Moreover, the concentration of impurities in a semiconductor film is reduced. Moreover, the electrical characteristics of a semiconductor device are improved. In a transistor including an oxide semiconductor film, an oxide film in contact with the oxide semiconductor film, and a pair of conductive films being in contact with the oxide film and including copper, aluminum, gold, silver, molybdenum, or the like, the oxide film has a plurality of crystal parts and has c-axis alignment in the crystal parts, and the c-axes are aligned in a direction parallel to a normal vector of a top surface of the oxide semiconductor film or the oxide film.

Abstract: To support preparation of a document with consistency.

Abstract: The impurity concentration in the oxide semiconductor film is reduced, and a highly reliability can be obtained.

Abstract: The impurity concentration in the oxide semiconductor film is reduced, and a highly reliability can be obtained.

Abstract: The stability of a step of processing a wiring formed using copper, aluminum, gold, silver, molybdenum, or the like is increased. Moreover, the concentration of impurities in a semiconductor film is reduced. Moreover, the electrical characteristics of a semiconductor device are improved. In a transistor including an oxide semiconductor film, an oxide film in contact with the oxide semiconductor film, and a pair of conductive films being in contact with the oxide film and including copper, aluminum, gold, silver, molybdenum, or the like, the oxide film has a plurality of crystal parts and has c-axis alignment in the crystal parts, and the c-axes are aligned in a direction parallel to a normal vector of a top surface of the oxide semiconductor film or the oxide film.

Abstract: A document retrieval system retrieving a document with the concept of the document taken into account is provided. The system includes a processing portion and the processing portion creates a retrieval graph from a retrieval composition. The retrieval graph includes first to m-th retrieval local graphs (m is an integer of greater than or equal to 1), and the retrieval local graphs are each constituted by two nodes and one edge. The processing portion performs retrieval of first to m-th sentences on a reference document. The i-th sentence (i is an integer of greater than or equal to 1 and less than or equal to m) includes one of the two nodes in the i-th retrieval local graph or a related term or a hyponym of the one of the two nodes; the other of the two nodes in the i-th retrieval local graph or a related term or a hyponym of the other of the two nodes; and the edge in the i-th retrieval local graph or a related term or a hyponym of the edge.

Abstract: An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.

Abstract: A novel metal oxide or a novel sputtering target is provided. A sputtering target includes a conductive material and an insulating material. The insulating material includes an oxide, a nitride, or an oxynitride including an element M1. The element M1 is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be, and B. The conductive material includes an oxide, a nitride, or an oxynitride including indium and zinc. A metal oxide film is deposited using the sputtering target in which the conductive material and the insulating material are separated from each other.

Abstract: A novel metal oxide is provided. The metal oxide has a plurality of energy gaps, and includes a first region having a high energy level of a conduction band minimum and a second region having an energy level of a conduction band minimum lower than that of the first region. The second region comprises more carriers than the first region. A difference between the energy level of the conduction band minimum of the first region and the energy level of the conduction band minimum of the second region is 0.2 eV or more. The energy gap of the first region is greater than or equal to 3.3 eV and less than or equal to 4.0 eV and the energy gap of the second region is greater than or equal to 2.2 eV and less than or equal to 2.9 eV.

Abstract: An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.