Patents by Inventor Motonobu Torii

Motonobu Torii has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220191414
    Abstract: An imaging device having first and second pixels is described. The first pixel includes a first transfer transistor, a first reset transistor, a first amplifier transistor and a first select transistor. The second pixel includes a first photoelectric conversion element, a second transfer transistor, a second reset transistor, a second amplifier transistor and a second select transistor.
    Type: Application
    Filed: February 28, 2022
    Publication date: June 16, 2022
    Applicant: Sony Semiconductor Solutions Corporation
    Inventors: Naoki Kawazu, Motonobu Torii, Motohashi Yuichi, Atsushi Suzuki, Junichiro Azami
  • Patent number: 11322534
    Abstract: The present disclosure relates to a solid-state imaging device and an electronic apparatus which allow reduction of optical crosstalk. In an example of FIG. 5B, a charge storage unit is formed by a method in which a hole is bored in a substrate, a diffusion layer is formed in a surface of the hole, and an insulating film and an upper electrode are formed so as to fill the hole. In an example of FIG. 5C, a charge storage unit is formed by a method in which a hole is bored in a substrate, a diffusion layer is formed in a half (one side) of a surface of the hole, and an insulating film and an upper electrode are formed so as to fill the hole. The present disclosure can be applied to a CMOS solid-state imaging device used for an imaging apparatus such as a camera, for example.
    Type: Grant
    Filed: November 23, 2020
    Date of Patent: May 3, 2022
    Assignee: SONY CORPORATION
    Inventors: Masaaki Takizawa, Yasushi Tateshita, Takahiro Toyoshima, Takuya Toyofuku, Yorito Sakano, Motonobu Torii
  • Patent number: 11303833
    Abstract: An imaging device having first and second pixels is described. The first pixel includes a first transfer transistor, a first reset transistor, a first amplifier transistor and a first select transistor. The second pixel includes a first photoelectric conversion element, a second transfer transistor, a second reset transistor, a second amplifier transistor and a second select transistor.
    Type: Grant
    Filed: March 10, 2021
    Date of Patent: April 12, 2022
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Naoki Kawazu, Motonobu Torii, Motohashi Yuichi, Atsushi Suzuki, Junichiro Azami
  • Publication number: 20210250533
    Abstract: An imaging device having first and second pixels is described. The first pixel comprises a first transfer transistor, a first reset transistor, a first amplifier transistor and a first select transistor. The first transfer transistor has a first terminal coupled to a reference signal generation circuit. The first reset transistor has a first terminal coupled to the reference signal generation circuit. The first amplifier transistor has a gate coupled to a second terminal of the first reset transistor and a second terminal of the first transfer transistor. The first select transistor is coupled to the first amplifier transistor. The second pixel comprises a first photoelectric conversion element, a second transfer transistor, a second reset transistor, a second amplifier transistor and a second select transistor. The second transfer transistor is coupled to the first photoelectric conversion element. The second reset transistor is configured to receive a first predetermined voltage.
    Type: Application
    Filed: March 10, 2021
    Publication date: August 12, 2021
    Applicant: Sony Semiconductor Solutions Corporation
    Inventors: Naoki Kawazu, Motonobu Torii, Motohashi Yuichi, Atsushi Suzuki, Junichiro Azami
  • Patent number: 11050955
    Abstract: The present technology relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic apparatus, the solid-state imaging device being capable of expanding the dynamic range without deteriorating the image quality. The solid-state imaging device includes a pixel array section having a plurality of unit pixels and a drive section. Each of the unit pixels includes a first photoelectric conversion section, a second photoelectric conversion section which is less sensitive than the first photoelectric conversion section, a charge storage section configured to store charges generated by the second photoelectric conversion section, a charge-voltage conversion section, a first transfer gate section configured to transfer charges from the first photoelectric conversion section, and a second transfer gate section configured to combine the potential of the charge-voltage conversion section with the potential of the charge storage section.
    Type: Grant
    Filed: October 25, 2019
    Date of Patent: June 29, 2021
    Assignee: SONY CORPORATION
    Inventors: Yorito Sakano, Isao Hirota, Motonobu Torii, Masaaki Takizawa, Junichiro Azami, Motohashi Yuichi, Atsushi Suzuki
  • Publication number: 20210143193
    Abstract: The present disclosure relates to a solid-state imaging device and an electronic apparatus which allow reduction of optical crosstalk. In an example of FIG. 5B, a charge storage unit is formed by a method in which a hole is bored in a substrate, a diffusion layer is formed in a surface of the hole, and an insulating film and an upper electrode are formed so as to fill the hole. In an example of FIG. 5C, a charge storage unit is formed by a method in which a hole is bored in a substrate, a diffusion layer is formed in a half (one side) of a surface of the hole, and an insulating film and an upper electrode are formed so as to fill the hole. By placing the charge storage unit (capacitance element) formed in the substrate in the foregoing manner between PDs which are first photoelectric conversion units, it is possible to allow the capacitance element to function as a shield pair against crosstalk between the PDs in a unit pixel.
    Type: Application
    Filed: November 23, 2020
    Publication date: May 13, 2021
    Inventors: MASAAKI TAKIZAWA, YASUSHI TATESHITA, TAKAHIRO TOYOSHIMA, TAKUYA TOYOFUKU, YORITO SAKANO, MOTONOBU TORII
  • Patent number: 10992889
    Abstract: A first pixel comprises a first transfer transistor, a first reset transistor, a first amplifier transistor and a first select transistor. The first transfer transistor has a first terminal coupled to a reference signal generation circuit. The first reset transistor has a first terminal coupled to the reference signal generation circuit. The first amplifier transistor has a gate coupled to a second terminal of the first reset transistor and a second terminal of the first transfer transistor. The first select transistor is coupled to the first amplifier transistor. A second pixel comprises a first photoelectric conversion element, a second transfer transistor coupled to the first photoelectric conversion element, a second reset transistor configured to receive a first predetermined voltage, a second amplifier transistor coupled to the second transfer transistor and the second reset transistor, and a second select transistor coupled to the second amplifier transistor.
    Type: Grant
    Filed: October 16, 2017
    Date of Patent: April 27, 2021
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Naoki Kawazu, Motonobu Torii, Motohashi Yuichi, Atsushi Suzuki, Junichiro Azami
  • Patent number: 10872919
    Abstract: Provided are a solid-state imaging device and an electronic apparatus that include a charge storage unit. The charge storage unit is formed by a method in which a hole is bored in a substrate, a diffusion layer is formed in a surface of the hole, and an insulating film and an upper electrode are formed so as to fill the hole. The charge storage unit is formed by a method in which a hole is bored in a substrate, a diffusion layer is formed in a half (one side) of a surface of the hole, and an insulating film and an upper electrode are formed so as to the hole.
    Type: Grant
    Filed: January 13, 2017
    Date of Patent: December 22, 2020
    Assignee: SONY CORPORATION
    Inventors: Masaaki Takizawa, Yasushi Tateshita, Takahiro Toyoshima, Takuya Toyofuku, Yorito Sakano, Motonobu Torii
  • Publication number: 20200059615
    Abstract: The present technology relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic apparatus, the solid-state imaging device being capable of expanding the dynamic range without deteriorating the image quality. The solid-state imaging device includes a pixel array section having a plurality of unit pixels and a drive section. Each of the unit pixels includes a first photoelectric conversion section, a second photoelectric conversion section which is less sensitive than the first photoelectric conversion section, a charge storage section configured to store charges generated by the second photoelectric conversion section, a charge-voltage conversion section, a first transfer gate section configured to transfer charges from the first photoelectric conversion section, and a second transfer gate section configured to combine the potential of the charge-voltage conversion section with the potential of the charge storage section.
    Type: Application
    Filed: October 25, 2019
    Publication date: February 20, 2020
    Applicant: SONY CORPORATION
    Inventors: Yorito SAKANO, Isao HIROTA, Motonobu TORII, Masaaki TAKIZAWA, Junichiro AZAMI, Motohashi YUICHI, Atsushi SUZUKI
  • Publication number: 20190373190
    Abstract: A first pixel comprises a first transfer transistor, a first reset transistor, a first amplifier transistor and a first select transistor. The first transfer transistor has a first terminal coupled to a reference signal generation circuit. The first reset transistor has a first terminal coupled to the reference signal generation circuit. The first amplifier transistor has a gate coupled to a second terminal of the first reset transistor and a second terminal of the first transfer transistor. The first select transistor is coupled to the first amplifier transistor. A second pixel comprises a first photoelectric conversion element, a second transfer transistor coupled to the first photoelectric conversion element, a second reset transistor configured to receive a first predetermined voltage, a second amplifier transistor coupled to the second transfer transistor and the second reset transistor, and a second select transistor coupled to the second amplifier transistor.
    Type: Application
    Filed: October 16, 2017
    Publication date: December 5, 2019
    Applicant: Sony Semiconductor Solutions Corporation
    Inventors: Naoki Kawazu, Motonobu Torii, Yuichi Motohashi, Atsushi Suzuki, Junichiro Azami
  • Patent number: 10498983
    Abstract: The present technology relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic apparatus, the solid-state imaging device being capable of expanding the dynamic range without deteriorating the image quality. The solid-state imaging device includes a pixel array section having a plurality of unit pixels and a drive section. Each of the unit pixels includes a first photoelectric conversion section, a second photoelectric conversion section which is less sensitive than the first photoelectric conversion section, a charge storage section configured to store charges generated by the second photoelectric conversion section, a charge-voltage conversion section, a first transfer gate section configured to transfer charges from the first photoelectric conversion section, and a second transfer gate section configured to combine the potential of the charge-voltage conversion section with the potential of the charge storage section.
    Type: Grant
    Filed: March 3, 2016
    Date of Patent: December 3, 2019
    Assignee: Sony Corporation
    Inventors: Yorito Sakano, Isao Hirota, Motonobu Torii, Masaaki Takizawa, Junichiro Azami, Motohashi Yuichi, Atsushi Suzuki
  • Publication number: 20190019820
    Abstract: The present disclosure relates to a solid-state imaging device and an electronic apparatus which allow reduction of optical crosstalk. In an example of B of FIG. 5, a charge storage unit is formed by a method in which a hole is bored in a substrate, a diffusion layer is formed in a surface of the hole, and an insulating film and an upper electrode are formed so as to fill the hole. In an example of C of FIG. 5, a charge storage unit is formed by a method in which a hole is bored in a substrate, a diffusion layer is formed in a half (one side) of a surface of the hole, and an insulating film and an upper electrode are formed so as to fill the hole. By placing the charge storage unit (capacitance element) formed in the substrate in the foregoing manner between PDs which are first photoelectric conversion units, it is possible to allow the capacitance element to function as a shield pair against crosstalk between the PDs in a unit pixel.
    Type: Application
    Filed: January 13, 2017
    Publication date: January 17, 2019
    Inventors: MASAAKI TAKIZAWA, YASUSHI TATESHITA, TAKAHIRO TOYOSHIMA, TAKUYA TOYOFUKU, YORITO SAKANO, MOTONOBU TORII
  • Publication number: 20180241955
    Abstract: The present technology relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic apparatus, the solid-state imaging device being capable of expanding the dynamic range without deteriorating the image quality. The solid-state imaging device includes a pixel array section having a plurality of unit pixels and a drive section. Each of the unit pixels includes a first photoelectric conversion section, a second photoelectric conversion section which is less sensitive than the first photoelectric conversion section, a charge storage section configured to store charges generated by the second photoelectric conversion section, a charge-voltage conversion section, a first transfer gate section configured to transfer charges from the first photoelectric conversion section, and a second transfer gate section configured to combine the potential of the charge-voltage conversion section with the potential of the charge storage section.
    Type: Application
    Filed: March 3, 2016
    Publication date: August 23, 2018
    Inventors: Yorito SAKANO, Isao HIROTA, Motonobu TORII, Masaaki TAKIZAWA, Junichiro AZAMI, Motohashi YUICHI, Atsushi SUZUKI
  • Publication number: 20130038768
    Abstract: A solid-state image pickup device includes pixels diagonally arranged, each including a photoelectric conversion unit and a plurality of transistors and wiring extending in the vertical and horizontal directions which is diagonally arranged around the photoelectric conversion unit in each of the pixels so that at least one portion of the wiring is arranged along at least one side of the photoelectric conversion unit.
    Type: Application
    Filed: October 18, 2012
    Publication date: February 14, 2013
    Applicant: SONY CORPORATION
    Inventors: Shunsuke MARUYAMA, Junichiro FUJIMAGARI, Toshifumi WAKANO, Motonobu TORII, Hironori HOSHI, Koji KIKUCHI
  • Patent number: 8355069
    Abstract: A solid-state image pickup device includes pixels diagonally arranged, each including a photoelectric conversion unit and a plurality of transistors and wiring extending in the vertical and horizontal directions which is diagonally arranged around the photoelectric conversion unit in each of the pixels so that at least one portion of the wiring is arranged along at least one side of the photoelectric conversion unit.
    Type: Grant
    Filed: January 24, 2007
    Date of Patent: January 15, 2013
    Assignee: Sony Corporation
    Inventors: Shunsuke Maruyama, Junichiro Fujimagari, Toshifumi Wakano, Motonobu Torii, Hironori Hoshi, Koji Kikuchi
  • Publication number: 20070177044
    Abstract: A solid-state image pickup device includes pixels diagonally arranged, each including a photoelectric conversion unit and a plurality of transistors and wiring extending in the vertical and horizontal directions which is diagonally arranged around the photoelectric conversion unit in each of the pixels so that at least one portion of the wiring is arranged along at least one side of the photoelectric conversion unit.
    Type: Application
    Filed: January 24, 2007
    Publication date: August 2, 2007
    Inventors: Shunsuke Maruyama, Junichiro Fujimagari, Toshifumi Wakano, Motonobu Torii, Hironori Hoshi, Koji Kikuchi