Abstract: A water repellent silicone coating agent composition comprising (A) a diorganopolysiloxane having a viscosity of 20 to 20,000 mPa·s at 25° C. in which the terminal ends of the molecular chain are blocked by silanol groups or silicon-bonded hydrolyzable groups, (B) a cross-linking agent represented by general formula RaSiX4-a, in which R is a monovalent hydrocarbon group comprising 1 to 10 carbon atoms, X is a hydrolyzable group, and subscript a is an integer of 0 to 2, (C) a condensation reaction catalyst, (D) a hydrophobic surface treated dry process silica having a carbon content of 3.7 to 5% by weight and a bulk density of 40 to 99 g/L, or a hydrophobic surface treated dry process silica having a carbon content of 2.7 to 5% by weight and a bulk density of 100 to 300 g/L, (E) an organic functional silane coupling agent-based adhesion-imparting agent, (F) an organic solvent, and optionally (G) a non-reactive silicone fluid.

Abstract: To provide a method for forming insulating thin films that can induce condensation of silanol and dehydration to a high degree at or near ambient pressure. An interlevel dielectric layer is formed on a semiconductor substrate by coating hydrogen silsesquioxane resin onto the substrate and curing the hydrogen silsesquioxane resin to produce an interlevel dielectric layer. This interlevel dielectric layer is then heated at a pressure from 1 to 1,000 torr at a temperature from 150 to 550° C.

Abstract: A water repellent silicone coating agent composition comprising (A) a diorganopolysiloxane having a viscosity of 20 to 20,000 mPa·s at 25° C. in which the terminal ends of the molecular chain are blocked by silanol groups or silicon-bonded hydrolyzable groups, (B) a cross-linking agent represented by general formula RaSiX4-a, in which R is a monovalent hydrocarbon group comprising 1 to 10 carbon atoms, X is a hydrolyzable group, and subscript a is an integer of 0 to 2, (C) a condensation reaction catalyst, (D) a hydrophobic surface treated dry process silica having a carbon content of 3.7 to 5% by weight and a bulk density of 40 to 99 g/L, or a hydrophobic surface treated dry process silica having a carbon content of 2.7 to 5% by weight and a bulk density of 100 to 300 g/L, (E) an organic functional silane coupling agent-based adhesion-imparting agent, (F) an organic solvent, and optionally (G) a non-reactive silicone fluid.

Abstract: A method for forming thin films on substrates wherein the films are produced by applying a solution of an electrically insulating, heat-curing resin onto the substrate, evaporating the solvent and exposing the resin to high energy radiation to cure the resin. The resin solution contains a substance selected from solvents and gas generating additives that causes the dedensification of the film during the cure of the resin. This results in a film having a dielectric constant of below 2.7. A semiconductor device is also disclosed as having an interconnect structure including at least one electrically conductive layer with an interposed insulating layer having a dielectric constant of less than 2.7 wherein the insulating layer is produced by the method described above.

Abstract: A curable silicone resin composition contains (A) 100 parts by weight of a silicone resin having condensation-reactive group, (B) 1 to 100 parts by weight of an inorganic fine powder, (C) 0.5 to 50 parts by weight of a silazane compound; and (D) an arbitrary amount of an organic solvent. The curable silicone resin composition cures to form a cured coating film with excellent water-repellent properties.

Abstract: This invention pertains to a method for forming thin films on substrates wherein the films are produced by applying a solution of an electrically insulating, heat-curing resin onto the substrate, evaporating the solvent and exposing the resin to high energy radiation to cure the resin. The resin solution contains a substance selected from solvents and gas generating additives that causes the dedensification of the film during the cure of the resin. This results in a film having a dielectric constant of below 2.7. This invention also pertains to a semiconductor device having an interconnect structure comprising at least one electrically conductive layer with an interposed insulating layer having a dielectric constant of less than 2.7 wherein the insulating layer is produced by the method of this invention.

Abstract: This invention pertains to a method for forming thin films on substrates wherein the films are produced by applying a solution of an electrically insulating, heat-curing resin onto the substrate, evaporating the solvent and exposing the resin to high energy radiation to cure the resin. The resin solution contains a substance selected from solvents and gas generating additives that causes the dedensification of the film during the cure of the resin. This results in a film having a dielectric constant of below 2.7. This invention also pertains to a semiconductor device having an interconnect structure comprising at least one electrically conductive layer with an interposed insulating layer having a dielectric constant of less than 2.7 wherein the insulating layer is produced by the method of this invention.

Abstract: The instant invention pertains to a composition that can form silica thin films, wherein said composition performs well as a substrate planarizing coating when applied to a substrate and can be converted by exposure to high-energy radiation into silica thin film with an excellent electrical insulating performance. The composition for the formation of silica thin films comprises (A) a hydrogen silsesquioxane resin that contains at least 45 weight % hydrogen silsesquioxane resin with a molecular weight no greater than 1,500; and (B) solvent. A silica thin film is produced by evaporating the solvent (B), and then converting at least a portion of the hydrogen silsesquioxane resin (A) to silica by exposing the surface of the said substrate to high-energy radiation. The preferred substrate is a semiconductor substrate having at least one electrically conductive layer.

Abstract: To provide a composition and process for forming insulating films that can produce insulating films having low dielectric constants. The composition comprises (A) an electrically insulating curable inorganic or organic resin, (B) a solvent, and (C) at least one solvent-soluble substance (excluding the solvent used for component (B)) that upon heating or by interaction with the resin (A) can generate gas or undergo volatilization in the temperature range from 0.degree. C. to 800.degree. C. The insulating films are prepared by coating the surface of a substrate the composition; evaporating the solvent; and subsequently heating the substrate in order to generate gas from component (C) during the course of or after the cure of the said resin (A).

Abstract: To provide a composition for the formation of insulating films that can form an insulating film having a low dielectric constant. The composition comprises (A) an electrically insulating curable resin selected from the group consisting of electrically insulating curable organic resins and electrically insulating curable inorganic resins; and (B) at least two solvents: (B)(i) a solvent capable of dissolving resin (A) and (B)(ii) a solvent whose boiling point or vapor pressure curve differs from that of solvent (B)(i) or whose affinity for resin (A) differs from that of solvent (B)(i). Also claimed is a method for forming a insulating films that have a dielectric constant of less than 2.7.

Abstract: Disclosed is a highly reproducible method for the molecular weight fractionation of polyhydrogen silsesquioxane that gives a very storage-stable polyhydrogen silsesquioxane having a freely selectable molecular weight. The method involves dissolving polyhydrogen silsesquioxane in active-hydrogen-free nonpolar solvent; adding an active-hydrogen-free polar solvent to the resulting solution in order to precipitate polyhydrogen silsesquioxane; and collecting the desired molecular weight fraction of polyhydrogen silsesquioxane.

Abstract: Disclosed is a highly reproducible method for the molecular weight fractionation of polyhydrogen silsesquioxane that gives a very storage-stable polyhydrogen silsesquioxane having a freely selectable molecular weight. The method involves dissolving polyhydrogen silsesquioxane in active-hydrogen-free nonpolar solvent; adding an active-hydrogen-free polar solvent to the resulting solution in order to precipitate polyhydrogen silsesquioxane; and collecting the desired molecular weight fraction of polyhydrogen silsesquioxane.

Abstract: Disclosed is a method for the formation of ceramic silicon oxide films on substrate surfaces wherein said films are thick, free of cracks and pinholes, and insoluble in organic solvents. These films are formed by coating the surface of a substrate with a silicon resin having the general formula(HR.sub.2 SiO.sub.1/2).sub.X (SiO.sub.4/2).sub.1.0wherein R is selected from the set comprising the hydrogen atom, alkyl groups, and aryl groups, and 0.1.ltoreq.X.ltoreq.2.0, and then heating the coated substrate to convert the coating into a ceramic silicon oxide film.

Abstract: Disclosed is a method for the formation of a thick silicon oxide film which is insoluble in organic solvents and free of cracks and pinholes on the surface of a substrate. The method comprises forming a hydrogen silsesquioxane resin film on the surface of a substrate, converting the hydrogen silsesquioxane resin into preceramic silicon oxide by heating in an inert gas atmosphere, and converting the preceramic silicon oxide into silicon oxide ceramic by heating in an atmosphere selected from the group consisting of oxygen and oxygen mixed with an inert gas.

Abstract: Disclosed is a method for the formation of a thick silicon oxide film on the surface of a substrate. The method comprises forming a hydrogen silsesquioxane resin film on the surface of a substrate and converting the hydrogen silsesquioxane resin into silicon oxide ceramic by heating the resin film-bearing substrate in an inert gas atmosphere at 250.degree. C. to 500.degree. C. until the content of silicon-bonded hydrogen in the silicon oxide product has reached .ltoreq.80% of the content of silicon-bonded hydrogen in the hydrogen silsesquioxane.

Abstract: Disclosed is a method for the formation of a thick silicon oxide film on the surface of a substrate. The method comprises forming a hydrogen silsesquioxane resin film on the surface of a substrate followed by converting the hydrogen silsesquioxane resin into silicon oxide ceramic by heating the resin film-bearing substrate in a mixed gas atmosphere of above 0 volume % up to 20 volume % oxygen and 80 volume % up to, but not including, 100 vol % inert gas until the content of silicon-bonded hydrogen in the silicon oxide product has reached .ltoreq.80% of the content of silicon-bonded hydrogen in the hydrogen silsesquioxane resin.

Abstract: Disclosed is a method for the preparation of high molecular-weight silicone resins that have excellent storage stability in solution form. The method comprises the hydrolysis and condensation of a disiloxane and an alkyl silicate in an aqueous solution which contains at least 30 weight % alcohol and at least 5 weight % inorganic acid followed by isolation of the resin with an organic solvent which is poorly soluble in water and which has a dielectric constant of at least 4.