Patents by Inventor Mototaka Taneya

Mototaka Taneya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210088489
    Abstract: Gas detection performance is enhanced with a configuration that does not need an air current generating device. In a gas sensor, three or more gas sensor elements are arranged such that two or more gas sensor elements have substantially the same gas response characteristic, and a first phantom line connecting two of the elements intersects an element except for the elements forming the first phantom line or intersects at least one second phantom line formed by elements except for the elements forming the first phantom line.
    Type: Application
    Filed: December 20, 2016
    Publication date: March 25, 2021
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: NOBORU IWATA, TATSUHITO ARIMURA, MOTOTAKA TANEYA
  • Patent number: 8547814
    Abstract: In a diffractive element, its grating pattern is so configured that a diffraction angle of a diffracted light beam of a light source that is subject to the first-order diffraction in a diffraction area is matched with an angle of a light beam passing through the diffractive area emitted from a light source and a light source position is matched with a light originating point of the light source that emits a light beam to be transmitted, and the center of light intensity distribution is matched with that of the light source passing through the diffractive element by inclining an optical axis of the light source. A position of the diffractive element is adjusted based on an electric current value generated when a reflected return path light beam of the light source is diffracted by the diffractive element and enters the light source.
    Type: Grant
    Filed: September 8, 2011
    Date of Patent: October 1, 2013
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Shinzoh Murakami, Mototaka Taneya, Takahide Ishiguro, Katsushige Masui, Satoru Fukumoto, Takeshi Horiguchi
  • Patent number: 8502238
    Abstract: A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 ?m or more.
    Type: Grant
    Filed: November 28, 2012
    Date of Patent: August 6, 2013
    Assignees: Sharp Kabushiki Kaisha, Sumitomo Electric Industries, Ltd.
    Inventors: Shigetoshi Ito, Takayuki Yuasa, Yoshihiro Ueta, Mototaka Taneya, Zenpei Tani, Kensaku Motoki
  • Patent number: 8496348
    Abstract: A linear light source (20), which emits light by causing light to propagate in a linear material (11) in which incoming light can be propagated, includes: a light emitting device (12), provided on a side of one end of the linear material (11), which emits light so that the light enters the one end of the linear material (11); and a light receiving device (21), provided on a side of the other end of the linear material (11), which detects the light which has propagated in the linear material (11). With the configuration, it is possible to provide: a linear light source in which an abnormal condition, such as breaking of a linear material, can be detected; and an electronic apparatus including the linear light source.
    Type: Grant
    Filed: September 1, 2009
    Date of Patent: July 30, 2013
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Yohhei Yoshida, Mototaka Taneya, Jun Okazaki, Tomotake Tanaka, Takuya Shigenobu
  • Patent number: 8456394
    Abstract: A light emitting apparatus comprises a light emitting section for emitting light, a color of the light being changed with a value of a driving current, and a driving section for driving the light emitting section so that the light emitting section emits light having a desired color and a desired intensity, by generating the driving current based on a signal designating the desired color and a signal designating the desired intensity and by applying the driving current to the light emitting section.
    Type: Grant
    Filed: July 9, 2012
    Date of Patent: June 4, 2013
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Takeshi Kamikawa, Shigetoshi Ito, Mototaka Taneya
  • Publication number: 20130114633
    Abstract: A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 ?m or more.
    Type: Application
    Filed: November 28, 2012
    Publication date: May 9, 2013
    Inventors: Shigetoshi ITO, Takayuki YUASA, Yoshihiro UETA, Mototaka TANEYA, Zenpei TANI, Kensaku MOTOKI
  • Patent number: 8334544
    Abstract: A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 ?m or more.
    Type: Grant
    Filed: July 14, 2010
    Date of Patent: December 18, 2012
    Assignees: Sharp Kabushiki Kaisha, Sumitomo Electric Industries, Ltd.
    Inventors: Shigetoshi Ito, Takayuki Yuasa, Yoshihiro Ueta, Mototaka Taneya, Zenpei Tani, Kensaku Motoki
  • Publication number: 20120274673
    Abstract: A light emitting apparatus comprises a light emitting section for emitting light, a color of the light being changed with a value of a driving current, and a driving section for driving the light emitting section so that the light emitting section emits light having a desired color and a desired intensity, by generating the driving current based on a signal designating the desired color and a signal designating the desired intensity and by applying the driving current to the light emitting section.
    Type: Application
    Filed: July 9, 2012
    Publication date: November 1, 2012
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Takeshi KAMIKAWA, Shigetoshi Ito, Mototaka Taneya
  • Patent number: 8287760
    Abstract: A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III-V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nm3 or less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.
    Type: Grant
    Filed: February 22, 2010
    Date of Patent: October 16, 2012
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Masaya Ishida, Tatsuya Morioka, Daisuke Hanaoka, Mototaka Taneya, Shigeo Fujita, Yoichi Kawakami, Masafumi Harada, Takatomo Sasaki, Yusuke Mori
  • Patent number: 8248335
    Abstract: A light emitting apparatus comprises a light emitting section for emitting light, a color of the light being changed with a value of a driving current, and a driving section for driving the light emitting section so that the light emitting section emits light having a desired color and a desired intensity, by generating the driving current based on a signal designating the desired color and a signal designating the desired intensity and by applying the driving current to the light emitting section.
    Type: Grant
    Filed: January 10, 2011
    Date of Patent: August 21, 2012
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Takeshi Kamikawa, Shigetoshi Ito, Mototaka Taneya
  • Publication number: 20120063281
    Abstract: In a diffractive element, its grating pattern is so configured that a diffraction angle of a diffracted light beam of a light source that is subject to the first-order diffraction in a diffraction area is matched with an angle of a light beam passing through the diffractive area emitted from a light source and a light source position is matched with a light originating point of the light source that emits a light beam to be transmitted, and the center of light intensity distribution is matched with that of the light source passing through the diffractive element by inclining an optical axis of the light source. A position of the diffractive element is adjusted based on an electric current value generated when a reflected return path light beam of the light source is diffracted by the diffractive element and enters the light source.
    Type: Application
    Filed: September 8, 2011
    Publication date: March 15, 2012
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Shinzoh MURAKAMI, Mototaka Taneya, Takahide Ishigro, Katsushige Masui, Satoru Fukumoto, Takeshi Horiguchi
  • Publication number: 20120049328
    Abstract: The present invention includes a first step of forming a nitride semiconductor layer by metal organic chemical vapor deposition by using a first carrier gas containing a nitrogen carrier gas and a hydrogen carrier gas of a flow quantity larger than that of the nitrogen carrier gas to thereby supply a raw material containing Mg and a Group V raw material containing N, and a second step of lowering a temperature by using a second carrier gas to which a material containing N is added, and hence solves the problems encountered in the art.
    Type: Application
    Filed: November 4, 2011
    Publication date: March 1, 2012
    Inventors: Yuhzoh Tsuda, Shigetoshi Ito, Mototaka Taneya, Yoshihiro Ueta, Teruyoshi Takakura
  • Patent number: 8076165
    Abstract: The present invention includes a first step of forming a nitride semiconductor layer by metal organic chemical vapor deposition by using a first carrier gas containing a nitrogen carrier gas and a hydrogen carrier gas of a flow quantity larger than that of the nitrogen carrier gas to thereby supply a raw material containing Mg and a Group V raw material containing N, and a second step of lowering a temperature by using a second carrier gas to which a material containing N is added, and hence solves the problems.
    Type: Grant
    Filed: March 2, 2006
    Date of Patent: December 13, 2011
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Yuhzoh Tsuda, Shigetoshi Ito, Mototaka Taneya, Yoshihiro Ueta, Teruyoshi Takakura
  • Publication number: 20110175549
    Abstract: A linear light source (20), which emits light by causing light to propagate in a linear material (11) in which incoming light can be propagated, includes: a light emitting device (12), provided on a side of one end of the linear material (11), which emits light so that the light enters the one end of the linear material (11); and a light receiving device (21), provided on a side of the other end of the linear material (11), which detects the light which has propagated in the linear material (11). With the configuration, it is possible to provide: a linear light source in which an abnormal condition, such as breaking of a linear material, can be detected; and an electronic apparatus including the linear light source.
    Type: Application
    Filed: September 1, 2009
    Publication date: July 21, 2011
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Yohhei Yoshida, Mototaka Taneya, Jun Okazaki, Tomotake Tanaka, Takuya Shigenobu
  • Publication number: 20110101881
    Abstract: A light emitting apparatus comprises a light emitting section for emitting light, a color of the light being changed with a value of a driving current, and a driving section for driving the light emitting section so that the light emitting section emits light having a desired color and a desired intensity, by generating the driving current based on a signal designating the desired color and a signal designating the desired intensity and by applying the driving current to the light emitting section.
    Type: Application
    Filed: January 10, 2011
    Publication date: May 5, 2011
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Takeshi KAMIKAWA, Shigetoshi Ito, Mototaka Taneya
  • Patent number: 7889161
    Abstract: A light emitting apparatus comprises a light emitting section for emitting light, a color of the light being changed with a value of a driving current, and a driving section for driving the light emitting section so that the light emitting section emits light having a desired color and a desired intensity, by generating the driving current based on a signal designating the desired color and a signal designating the desired intensity and by applying the driving current to the light emitting section.
    Type: Grant
    Filed: December 22, 2006
    Date of Patent: February 15, 2011
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Takeshi Kamikawa, Shigetoshi Ito, Mototaka Taneya
  • Patent number: 7858992
    Abstract: A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.
    Type: Grant
    Filed: February 5, 2009
    Date of Patent: December 28, 2010
    Assignees: Sharp Kabushiki Kaisha, Sumitomo Electric Industries, Ltd.
    Inventors: Yoshihiro Ueta, Teruyoshi Takakura, Takeshi Kamikawa, Yuhzoh Tsuda, Shigetoshi Ito, Takayuki Yuasa, Mototaka Taneya, Kensaku Motoki
  • Patent number: 7842956
    Abstract: On a nitride semiconductor layered portion formed on a substrate, there are formed an insulating film and a p-side electrode in this order. Furthermore, an end portion electrode protection layer is formed above the p-side electrode, around a position where cleavage will take place.
    Type: Grant
    Filed: December 11, 2006
    Date of Patent: November 30, 2010
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Susumu Ohmi, Kunihiro Takatani, Fumio Yamashita, Mototaka Taneya
  • Publication number: 20100278205
    Abstract: A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 ?m or more.
    Type: Application
    Filed: July 14, 2010
    Publication date: November 4, 2010
    Applicants: SHARP KABUSHIKI KAISHA, SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Shigetoshi ITO, Takayuki YUASA, Yoshihiro UETA, Mototaka TANEYA, Zenpei TANI, Kensaku MOTOKI
  • Patent number: 7781244
    Abstract: A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 ?m or more.
    Type: Grant
    Filed: September 16, 2008
    Date of Patent: August 24, 2010
    Assignees: Sharp Kabushiki Kaisha, Sumitomo Electric Industries, Ltd.
    Inventors: Shigetoshi Ito, Takayuki Yuasa, Yoshihiro Ueta, Mototaka Taneya, Zenpei Tani, Kensaku Motoki