Abstract: An electronic device inspection apparatus of the present application comprises an inspection table for positioning and holding an electrode disposed on a semiconductor device , a contact element that is formed of a shape memory alloy in a long and thin plate shape and has a base part fixed to the inspection table and a variable part formed in a shape of a spiral at a first temperature and being developed from the spiral at a second temperature; and a measurement circuitry for measuring the semiconductor device by conducting a current to flow into the electrode via the contact element. The axis of the spiral of the variable part is parallel to the electrode face of the positioned electrode and a contact region is formed along a longitudinal direction between the variable part and the positioned electrode at the second temperature.

Abstract: A semiconductor inspection jig includes: a base on which a semiconductor device is placed; and a substrate provided on the base and including a conductive pattern, wherein the conductive pattern intersects with a lead of the semiconductor device placed on the base from a direction other than a horizontal direction with respect to the lead, and is in contact with an intermediate part of the lead without being in contact with a leading end of the lead.

Abstract: A semiconductor inspection jig includes: a base on which a semiconductor device is placed; and a substrate provided on the base and including a conductive pattern, wherein the conductive pattern intersects with a lead of the semiconductor device placed on the base from a direction other than a horizontal direction with respect to the lead, and is in contact with an intermediate part of the lead without being in contact with a leading end of the lead.

Abstract: A configuration is provided with: a tuned line 13 that is connected between a branch terminal 3 and a branch terminal of branch lines 2 and 4; and a tuned line 14 that is connected between a combining terminal 7 and a combining terminal 9 of combining lines 10 and 11. This enables reduction of a non-uniform voltage distribution occurring due to a difference in characteristics between two amplifier elements 6 and 8.

Abstract: A configuration is provided with: a tuned line 13 that is connected between a branch terminal 3 and a branch terminal of branch lines 2 and 4; and a tuned line 14 that is connected between a combining terminal 7 and a combining terminal 9 of combining lines 10 and 11. This enables reduction of a non-uniform voltage distribution occurring due to a difference in characteristics between two amplifier elements 6 and 8.

Abstract: A semiconductor device includes: a package; an input matching circuit and an output matching circuit in the package; and transistor chips between the input matching circuit and the output matching circuit in the package. Each transistor chip includes a semiconductor substrate having long sides and short sides that are shorter than the long sides, and a gate electrode, a drain electrode and a source electrode on the semiconductor substrate. The gate electrode has gate fingers arranged along the long sides of the semiconductor substrate and a gate pad commonly connected to the gate fingers and connected to the input matching circuit via a first wire. The drain electrode is connected to the output matching circuit via a second wire. The long sides of the semiconductor substrates of the transistor chips are oblique with respect to an input/output direction extending from the input matching circuit to the output matching circuit.

Abstract: A semiconductor device includes: a package; an input matching circuit and an output matching circuit in the package; and transistor chips between the input matching circuit and the output matching circuit in the package. Each transistor chip includes a semiconductor substrate having long sides and short sides that are shorter than the long sides, and a gate electrode, a drain electrode and a source electrode on the semiconductor substrate. The gate electrode has gate fingers arranged along the long sides of the semiconductor substrate and a gate pad commonly connected to the gate fingers and connected to the input matching circuit via a first wire. The drain electrode is connected to the output matching circuit via a second wire. The long sides of the semiconductor substrates of the transistor chips are oblique with respect to an input/output direction extending from the input matching circuit to the output matching circuit.