Abstract: A deposition apparatus including a chamber having a deposition area and a non-deposition area, a gas intake device communicated with the chamber, a gas annulus disposed in the chamber and surrounding the gas intake device, a carrier disposed in the deposition area and a retaining annulus disposed in chamber and surrounding the carrier. The gas intake device is disposed corresponding to the deposition area and configured to draw a process gas into the deposition area. The gas annulus is configured to generate an annular gas curtain in the deposition area. The carrier carries a deposited object, wherein the gas annulus is located between the gas intake device and the carrier. The deposited object is surrounded by the annular gas curtain. The retaining annulus has a plurality of through holes. The retaining annulus is located between the gas annulus and the carrier.

Abstract: A deposition apparatus including a chamber having a deposition area and a non-deposition area, a gas intake device communicated with the chamber, a gas annulus disposed in the chamber and surrounding the gas intake device, a carrier disposed in the deposition area and a retaining annulus disposed in chamber and surrounding the carrier. The gas intake device is disposed corresponding to the deposition area and configured to draw a process gas into the deposition area. The gas annulus is configured to generate an annular gas curtain in the deposition area. The carrier carries a deposited object, wherein the gas annulus is located between the gas intake device and the carrier. The deposited object is surrounded by the annular gas curtain. The retaining annulus has a plurality of through holes. The retaining annulus is located between the gas annulus and the carrier.

Abstract: A solidifying device is for solidifying a substrate which includes a middle and two side portions. The thermostability of the middle portion is greater than that of the side portions. The solidifying device includes a housing, a heating member, a temperature control air-floating member and a conveyor. The housing defines a working space. The heating member is in the working space. The substrate has a heat receiving surface facing the heating member. The temperature control air-floating member is in the working space and below the heating member. The conveyor is for transporting the substrate into the working space and between the temperature control air-floating member and the heating member. The heating member is for providing heat to the substrate. The temperature control air-floating member is for supplying air towards the substrate to allow the substrate to float in the working space and form a high-temperature and two low-temperature areas.

Abstract: A solidifying device is for solidifying a substrate which includes a middle and two side portions. The thermostability of the middle portion is greater than that of the side portions. The solidifying device includes a housing, a heating member, a temperature control air-floating member and a conveyor. The housing defines a working space. The heating member is in the working space. The substrate has a heat receiving surface facing the heating member. The temperature control air-floating member is in the working space and below the heating member. The conveyor is for transporting the substrate into the working space and between the temperature control air-floating member and the heating member. The heating member is for providing heat to the substrate. The temperature control air-floating member is for supplying air towards the substrate to allow the substrate to float in the working space and form a high-temperature and two low-temperature areas.

Abstract: A plasma generator, a surface treatment method using the same, and a surface treatment method using the same for bio-tissue are provided. The plasma generator comprises a plasma tube, a reaction source tube, a first electrode and a second electrode. The plasma tube has a plasma outlet. The reaction source tube is disposed within the plasma tube, and has a reaction outlet. The first electrode and the second electrode are disposed on the plasma tube, wherein the second electrode is closer to the plasma outlet than the first electrode is. The plasma outlet of the reaction source is not projected beyond a lower portion of the first electrode.

Abstract: A plasma generator, a surface treatment method using the same, and a surface treatment method using the same for bio-tissue are provided. The plasma generator comprises a plasma tube, a reaction source tube, a first electrode and a second electrode. The plasma tube has a plasma outlet. The reaction source tube is disposed within the plasma tube, and has a reaction outlet. The first electrode and the second electrode are disposed on the plasma tube, wherein the second electrode is closer to the plasma outlet than the first electrode is. The plasma outlet of the reaction source is not projected beyond a lower portion of the first electrode.

Abstract: A substrate and mask attachment clamp device comprising a push assembly, an upper clamp mechanism and a lower clamp mechanism is disclosed. The upper clamp mechanism comprises a first inclined surface, a swing element, a second inclined surface and a sliding surface. The lower clamp mechanism comprises a lower clamp retainer and a clamp movably. During the push assembly moving along a first direction, the push assembly moves with respect to the first inclined surface to drive the upper clamp mechanism to move along a second direction. The push assembly further drives the second inclined surface to move with respect to the swing element, so that the swing element drives the clamp to move along a third direction opposite to the first direction, and drives the sliding surface to move with respect to the lower clamp mechanism to drive the clamp to move along a fourth direction.

Abstract: A method for depositing a microcrystalline silicon film is disclosed, including performing an open loop and close loop plasma enhanced deposition process without and with modulating process parameters, respectively. A film is deposited by the open loop plasma enhanced deposition process till a required film crystallinity and then performing a closed loop plasma enhanced deposition process which monitors species plasma spectrum intensities SiH* and H? and modulates process parameters of the plasma enhanced deposition process resulting in the species concentration stabilization which controls the intensities variation of SiH* and H? within an allowed range of a target value for improving film depositing rate.

Abstract: The deposition apparatus has a plurality of said transmission mechanisms arranged therein in a symmetrical manner. Each transmission mechanism comprises: a drive shaft, formed with a tapered end; a driving wheel, configured with a shaft hole for the tapered end to bore coaxially therethrough; a plurality of slide pieces, radially mounted to the driving wheel; a first elastic member, mounted enabling the plural slide pieces to be ensheathed thereby; a second elastic member, disposed between the first elastic member and the first axial end of the drive shaft while being mounted to the periphery of the driving wheel; an enclosure, configured with an opening; wherein, the driving wheel that is moving in a reciprocating manner drives the sliding pieces to slide in radial directions, thereby, causing the outer diameter of the first elastic member to change accordingly and enabling the opening of the enclosure to open or close in consequence.

Abstract: A cathode discharge device is provided. The cathode discharge apparatus includes an anode, a cathode and plural cathode chambers. The cathode is located inside the anode, where the cathode has plural flow channels and at least one flow channel hole, and the plural flow channels are connected to one another through the flow channel hole. The plural cathode chambers are located inside the cathode, wherein each of the cathode chambers has a chamber outlet and a chamber inlet connected with at least one of the flow channels.

Abstract: A view port device for a plasma process and a process observation device of a plasma apparatus are provided. The view port device for a plasma process comprises a first substrate portion, a second substrate portion, and a connecting portion. The first substrate portion has a first through hole. The second substrate portion has a second through hole and a second diffusion space. A cross-sectional area of the second diffusion space is larger than that of the second through hole. The connecting portion is disposed between the first substrate portion and the second substrate portion.

Abstract: The present disclosure provides a surface processing apparatus, comprising a reaction chamber provided to form a deposition layer on a substrate, a carrying chamber connected to the reaction chamber and comprising a slot, and a plasma generator installed in the slot and providing plasma to process the substrate surface. Whereby the disclosure further provides a surface processing method, which flatten surface of a deposition layer on the substrate when the substrate is carried form the reaction chamber to the carrying chamber after the deposition process in the reaction chamber.

Abstract: A structure for increasing utilization rate of target is disclosed, which comprises: a magnetic base, capable of moving relative to a target in a reciprocating manner; and two magnetic conductors, disposed respectively at two motion limits with respect to the reciprocating range of the magnetic base. Thereby, when the magnetic base is moved to a position close to any one of magnetic conductors, the surface magnetic field intensity of the target that is caused by the magnetic base is reduced so that the ion bombardment happening at the two ends of the target will be eased off for increasing the utilization rate of the target.

Abstract: A method for depositing a microcrystalline silicon film is disclosed, including performing an open loop and close loop plasma enhanced deposition process without and with modulating process parameters, respectively. A film is deposited by the open loop plasma enhanced deposition process till a required film crystallinity and then performing a closed loop plasma enhanced deposition process which monitors species plasma spectrum intensities SiH* and H? and modulates process parameters of the plasma enhanced deposition process resulting in the species concentration stabilization which controls the intensities variation of SiH* and H? within an allowed range of a target value for improving film depositing rate.

Abstract: The present invention provides a gas distribution plate for providing at least two gas flowing channel. In one embodiment, the gas distribution plate has a first flowing channel, at least a second flowing channel disposed around the first flowing channel, and a tapered opening communicating with the first and the second flowing channel. In another embodiment, the gas distribution plate has a first flowing channel passing through a first and a second surface of the gas distribution plate, a second flowing channel paralleling to the first surface and a third flowing channel disposed at the second surface and communicating with the second flowing channel. The ends of the first and the third flowing channel have a tapered opening respectively. Besides, the present further provides a gas distribution apparatus for allowing at least two separate gases to be delivered independently into a process chamber while enabling the gases to be mixed completely after entering the processing chamber.

Abstract: A long linear-type microwave plasma source using a variably-reduced-height rectangular waveguide as the plasma reactor has been developed. Microwave power is fed from the both sides of the waveguide and is coupled into plasma through a long slot cut on the broad side of the waveguide. The reduced height of the waveguide is variable in order to control the coupling between microwave and plasma so that the plasma uniformity can remain a high quality when extending the length of the linear-type plasma source.

Abstract: A capacitively coupled plasma (CCP) generator with two input ports, which is especially used as a large-area capacitively coupled plasma (CCP) generator. In the inventive CCP generator, only a RF power supply is required to provide the two input ports with RF power. The input impedance at each of the input ports is adjustable so that the standing wave between two rectangular electrodes can be eliminated to achieve plasma uniformity.

Abstract: A cathode discharge device is provided. The cathode discharge apparatus includes an anode, a cathode and plural cathode chambers. The cathode is located inside the anode, where the cathode has plural flow channels and at least one flow channel hole, and the plural flow channels are connected to one another through the flow channel hole. The plural cathode chambers are located inside the cathode, wherein each of the cathode chambers has a chamber outlet and a chamber inlet connected with at least one of the flow channels.

Abstract: A transmission device for thin and brittleness substrate is disclosed, which comprises: a plurality of transportation rollers and a plurality of pinch rollers. Each transportation roller further comprises: a rigid spindle; and a plurality of elastic supporting wheels, mounted on the spindle. Each pinch roller comprises: a sleeve; a spindle, ensheathed in the sleeve; and a plurality of pressing wheels, mounted on the sleeve at positions corresponding to the supporting wheels. When the transportation rollers are driven to rotate, a substrate sandwiched between the supporting wheels and the pressing wheels will be push to move while subjecting to a friction originated from a sufficient holding force by the supporting wheels and the pressing wheels, and consequently, providing an improved buffering capability for deformation absorption that enables the transmission device to guide the thin substrate to move smoothly without causing buckling or scratching to the thin substrate.

Abstract: A susceptor positioning and supporting device of a vacuum apparatus for carrying and elevating a substrate in a vacuum apparatus chamber is provided. The device has a lateral positioning and supporting mechanism to perform clamping and positioning at a side of a susceptor, preventing the susceptor from slanting inside the vacuum apparatus chamber. The lateral positioning and supporting mechanism and the susceptor thereby forms a closed beam support mechanism capable of reducing load suspension deformation at the ends of the large susceptor. The device improves planarity of the large susceptor and the substrate, and in turn improves uniformity of a thin film deposited on the substrate.