Patents by Inventor Muh-Wang Liang

Muh-Wang Liang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10591216
    Abstract: A solidifying device is for solidifying a substrate which includes a middle and two side portions. The thermostability of the middle portion is greater than that of the side portions. The solidifying device includes a housing, a heating member, a temperature control air-floating member and a conveyor. The housing defines a working space. The heating member is in the working space. The substrate has a heat receiving surface facing the heating member. The temperature control air-floating member is in the working space and below the heating member. The conveyor is for transporting the substrate into the working space and between the temperature control air-floating member and the heating member. The heating member is for providing heat to the substrate. The temperature control air-floating member is for supplying air towards the substrate to allow the substrate to float in the working space and form a high-temperature and two low-temperature areas.
    Type: Grant
    Filed: December 4, 2017
    Date of Patent: March 17, 2020
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Fu-Ching Tung, Muh-Wang Liang, Jung-Chen Chien, Yi-Jiun Lin
  • Publication number: 20190101333
    Abstract: A solidifying device is for solidifying a substrate which includes a middle and two side portions. The thermostability of the middle portion is greater than that of the side portions. The solidifying device includes a housing, a heating member, a temperature control air-floating member and a conveyor. The housing defines a working space. The heating member is in the working space. The substrate has a heat receiving surface facing the heating member. The temperature control air-floating member is in the working space and below the heating member. The conveyor is for transporting the substrate into the working space and between the temperature control air-floating member and the heating member. The heating member is for providing heat to the substrate. The temperature control air-floating member is for supplying air towards the substrate to allow the substrate to float in the working space and form a high-temperature and two low-temperature areas.
    Type: Application
    Filed: December 4, 2017
    Publication date: April 4, 2019
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Fu-Ching Tung, Muh-Wang Liang, Jung-Chen Chien, Yi-Jiun Lin
  • Patent number: 9204950
    Abstract: A plasma generator, a surface treatment method using the same, and a surface treatment method using the same for bio-tissue are provided. The plasma generator comprises a plasma tube, a reaction source tube, a first electrode and a second electrode. The plasma tube has a plasma outlet. The reaction source tube is disposed within the plasma tube, and has a reaction outlet. The first electrode and the second electrode are disposed on the plasma tube, wherein the second electrode is closer to the plasma outlet than the first electrode is. The plasma outlet of the reaction source is not projected beyond a lower portion of the first electrode.
    Type: Grant
    Filed: December 27, 2013
    Date of Patent: December 8, 2015
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chih-Hung Liu, Muh-Wang Liang, Shen-Bin Wu, Tean-Mu Shen
  • Publication number: 20150050614
    Abstract: A plasma generator, a surface treatment method using the same, and a surface treatment method using the same for bio-tissue are provided. The plasma generator comprises a plasma tube, a reaction source tube, a first electrode and a second electrode. The plasma tube has a plasma outlet. The reaction source tube is disposed within the plasma tube, and has a reaction outlet. The first electrode and the second electrode are disposed on the plasma tube, wherein the second electrode is closer to the plasma outlet than the first electrode is. The plasma outlet of the reaction source is not projected beyond a lower portion of the first electrode.
    Type: Application
    Filed: December 27, 2013
    Publication date: February 19, 2015
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chih-Hung LIU, Muh-Wang LIANG, Shen-Bin WU, Tean-Mu SHEN
  • Publication number: 20140144377
    Abstract: A substrate and mask attachment clamp device comprising a push assembly, an upper clamp mechanism and a lower clamp mechanism is disclosed. The upper clamp mechanism comprises a first inclined surface, a swing element, a second inclined surface and a sliding surface. The lower clamp mechanism comprises a lower clamp retainer and a clamp movably. During the push assembly moving along a first direction, the push assembly moves with respect to the first inclined surface to drive the upper clamp mechanism to move along a second direction. The push assembly further drives the second inclined surface to move with respect to the swing element, so that the swing element drives the clamp to move along a third direction opposite to the first direction, and drives the sliding surface to move with respect to the lower clamp mechanism to drive the clamp to move along a fourth direction.
    Type: Application
    Filed: April 29, 2013
    Publication date: May 29, 2014
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chen-Chung Du, Muh-Wang Liang, Yuan-Yuan Chiang
  • Patent number: 8435803
    Abstract: A method for depositing a microcrystalline silicon film is disclosed, including performing an open loop and close loop plasma enhanced deposition process without and with modulating process parameters, respectively. A film is deposited by the open loop plasma enhanced deposition process till a required film crystallinity and then performing a closed loop plasma enhanced deposition process which monitors species plasma spectrum intensities SiH* and H? and modulates process parameters of the plasma enhanced deposition process resulting in the species concentration stabilization which controls the intensities variation of SiH* and H? within an allowed range of a target value for improving film depositing rate.
    Type: Grant
    Filed: April 12, 2010
    Date of Patent: May 7, 2013
    Assignee: Industrial Technology Research Institute
    Inventors: Chen-Chung Du, Sheng-Lang Lee, Muh-Wang Liang, Jen-Rong Huang, Chia-Hao Chang
  • Publication number: 20120240855
    Abstract: The deposition apparatus has a plurality of said transmission mechanisms arranged therein in a symmetrical manner. Each transmission mechanism comprises: a drive shaft, formed with a tapered end; a driving wheel, configured with a shaft hole for the tapered end to bore coaxially therethrough; a plurality of slide pieces, radially mounted to the driving wheel; a first elastic member, mounted enabling the plural slide pieces to be ensheathed thereby; a second elastic member, disposed between the first elastic member and the first axial end of the drive shaft while being mounted to the periphery of the driving wheel; an enclosure, configured with an opening; wherein, the driving wheel that is moving in a reciprocating manner drives the sliding pieces to slide in radial directions, thereby, causing the outer diameter of the first elastic member to change accordingly and enabling the opening of the enclosure to open or close in consequence.
    Type: Application
    Filed: July 6, 2011
    Publication date: September 27, 2012
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chen-Chung Du, Ming-Tung Chiang, Muh-Wang Liang, Kuan-Chou Chen, Tean-Mu Shen, Jung-Chen Ho
  • Patent number: 8198793
    Abstract: A cathode discharge device is provided. The cathode discharge apparatus includes an anode, a cathode and plural cathode chambers. The cathode is located inside the anode, where the cathode has plural flow channels and at least one flow channel hole, and the plural flow channels are connected to one another through the flow channel hole. The plural cathode chambers are located inside the cathode, wherein each of the cathode chambers has a chamber outlet and a chamber inlet connected with at least one of the flow channels.
    Type: Grant
    Filed: March 26, 2009
    Date of Patent: June 12, 2012
    Assignee: Industrial Technology Research Institute
    Inventors: Fu-Ching Tung, Tean-Mu Shen, Jung-Chen Ho, Pei-Shan Wu, Chia-Ming Chen, Kuan-Chou Chen, Jung-Chen Chien, Muh-Wang Liang
  • Publication number: 20120111269
    Abstract: A view port device for a plasma process and a process observation device of a plasma apparatus are provided. The view port device for a plasma process comprises a first substrate portion, a second substrate portion, and a connecting portion. The first substrate portion has a first through hole. The second substrate portion has a second through hole and a second diffusion space. A cross-sectional area of the second diffusion space is larger than that of the second through hole. The connecting portion is disposed between the first substrate portion and the second substrate portion.
    Type: Application
    Filed: January 19, 2011
    Publication date: May 10, 2012
    Inventors: Chen-Chung DU, Muh-Wang Liang, Guan-Yu Lin, Ta-Chin Wei
  • Publication number: 20110305846
    Abstract: The present disclosure provides a surface processing apparatus, comprising a reaction chamber provided to form a deposition layer on a substrate, a carrying chamber connected to the reaction chamber and comprising a slot, and a plasma generator installed in the slot and providing plasma to process the substrate surface. Whereby the disclosure further provides a surface processing method, which flatten surface of a deposition layer on the substrate when the substrate is carried form the reaction chamber to the carrying chamber after the deposition process in the reaction chamber.
    Type: Application
    Filed: September 17, 2010
    Publication date: December 15, 2011
    Applicant: Industrial Technology Research Institute
    Inventors: JUNG-CHEN CHIEN, HUNG-JEN YANG, CHIH-CHEN CHANG, SHIH-CHIN LIN, MUH-WANG LIANG
  • Publication number: 20110136269
    Abstract: A method for depositing a microcrystalline silicon film is disclosed, including performing an open loop and close loop plasma enhanced deposition process without and with modulating process parameters, respectively. A film is deposited by the open loop plasma enhanced deposition process till a required film crystallinity and then performing a closed loop plasma enhanced deposition process which monitors species plasma spectrum intensities SiH* and H? and modulates process parameters of the plasma enhanced deposition process resulting in the species concentration stabilization which controls the intensities variation of SiH* and H? within an allowed range of a target value for improving film depositing rate.
    Type: Application
    Filed: April 12, 2010
    Publication date: June 9, 2011
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chen-Chung Du, Sheng-Lang Lee, Muh-Wang Liang, Jen-Rong Huang, Chia-Hao Chang
  • Publication number: 20110132758
    Abstract: A structure for increasing utilization rate of target is disclosed, which comprises: a magnetic base, capable of moving relative to a target in a reciprocating manner; and two magnetic conductors, disposed respectively at two motion limits with respect to the reciprocating range of the magnetic base. Thereby, when the magnetic base is moved to a position close to any one of magnetic conductors, the surface magnetic field intensity of the target that is caused by the magnetic base is reduced so that the ion bombardment happening at the two ends of the target will be eased off for increasing the utilization rate of the target.
    Type: Application
    Filed: March 4, 2010
    Publication date: June 9, 2011
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Kang-Feng Lee, Kuan-Chou Chen, Muh-Wang Liang, Chian-Fu Huang
  • Publication number: 20110073038
    Abstract: The present invention provides a gas distribution plate for providing at least two gas flowing channel. In one embodiment, the gas distribution plate has a first flowing channel, at least a second flowing channel disposed around the first flowing channel, and a tapered opening communicating with the first and the second flowing channel. In another embodiment, the gas distribution plate has a first flowing channel passing through a first and a second surface of the gas distribution plate, a second flowing channel paralleling to the first surface and a third flowing channel disposed at the second surface and communicating with the second flowing channel. The ends of the first and the third flowing channel have a tapered opening respectively. Besides, the present further provides a gas distribution apparatus for allowing at least two separate gases to be delivered independently into a process chamber while enabling the gases to be mixed completely after entering the processing chamber.
    Type: Application
    Filed: November 11, 2009
    Publication date: March 31, 2011
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Jung-Chen CHIEN, Jun-Chin Liu, Hung-Jen Yang, Tean-Mu Shen, Muh-Wang Liang
  • Publication number: 20100164381
    Abstract: A long linear-type microwave plasma source using a variably-reduced-height rectangular waveguide as the plasma reactor has been developed. Microwave power is fed from the both sides of the waveguide and is coupled into plasma through a long slot cut on the broad side of the waveguide. The reduced height of the waveguide is variable in order to control the coupling between microwave and plasma so that the plasma uniformity can remain a high quality when extending the length of the linear-type plasma source.
    Type: Application
    Filed: May 22, 2009
    Publication date: July 1, 2010
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: CHIH-CHEN CHANG, TUNG-CHUAN WU, CHAN-HSING LO, CHING-HUEI WU, MUH-WANG LIANG, FU-CHING TUNG, SHIH-CHIN LIN, JEN-RONG HUANG
  • Publication number: 20100141147
    Abstract: A capacitively coupled plasma (CCP) generator with two input ports, which is especially used as a large-area capacitively coupled plasma (CCP) generator. In the inventive CCP generator, only a RF power supply is required to provide the two input ports with RF power. The input impedance at each of the input ports is adjustable so that the standing wave between two rectangular electrodes can be eliminated to achieve plasma uniformity.
    Type: Application
    Filed: April 16, 2009
    Publication date: June 10, 2010
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: CHIH-CHEN CHANG, TUNG-CHUAN WU, CHAN-HSING LO, CHING-HUEI WU, JEN-RONG HUANG, MUH-WANG LIANG, CHIA-HAO CHANG
  • Publication number: 20100123381
    Abstract: A cathode discharge device is provided. The cathode discharge apparatus includes an anode, a cathode and plural cathode chambers. The cathode is located inside the anode, where the cathode has plural flow channels and at least one flow channel hole, and the plural flow channels are connected to one another through the flow channel hole. The plural cathode chambers are located inside the cathode, wherein each of the cathode chambers has a chamber outlet and a chamber inlet connected with at least one of the flow channels.
    Type: Application
    Filed: March 26, 2009
    Publication date: May 20, 2010
    Applicant: Industrial Technology Research Institute
    Inventors: FU-CHING TUNG, Tean-Mu Shen, Jung-Chen Ho, Pei-Shan Wu, Chia-Ming Chen, Kuan-Chou Chen, Jung-Chen Chien, Muh-Wang Liang
  • Publication number: 20100116623
    Abstract: A transmission device for thin and brittleness substrate is disclosed, which comprises: a plurality of transportation rollers and a plurality of pinch rollers. Each transportation roller further comprises: a rigid spindle; and a plurality of elastic supporting wheels, mounted on the spindle. Each pinch roller comprises: a sleeve; a spindle, ensheathed in the sleeve; and a plurality of pressing wheels, mounted on the sleeve at positions corresponding to the supporting wheels. When the transportation rollers are driven to rotate, a substrate sandwiched between the supporting wheels and the pressing wheels will be push to move while subjecting to a friction originated from a sufficient holding force by the supporting wheels and the pressing wheels, and consequently, providing an improved buffering capability for deformation absorption that enables the transmission device to guide the thin substrate to move smoothly without causing buckling or scratching to the thin substrate.
    Type: Application
    Filed: April 8, 2009
    Publication date: May 13, 2010
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chen-Chung Du, Kang-Feng Lee, Muh-Wang Liang, Chan-Hsing Lo, Tung-Chuan Wu
  • Publication number: 20090283042
    Abstract: A susceptor positioning and supporting device of a vacuum apparatus for carrying and elevating a substrate in a vacuum apparatus chamber is provided. The device has a lateral positioning and supporting mechanism to perform clamping and positioning at a side of a susceptor, preventing the susceptor from slanting inside the vacuum apparatus chamber. The lateral positioning and supporting mechanism and the susceptor thereby forms a closed beam support mechanism capable of reducing load suspension deformation at the ends of the large susceptor. The device improves planarity of the large susceptor and the substrate, and in turn improves uniformity of a thin film deposited on the substrate.
    Type: Application
    Filed: August 19, 2008
    Publication date: November 19, 2009
    Inventors: Chen-Chung DU, Muh-Wang Liang, Ching-Huei Wu, Ming-Tung Chiang
  • Publication number: 20090151637
    Abstract: A microwave-excited plasma source using a ridged wave-guide line-type microwave plasma reactor is disclosed. The microwave-excited plasma source comprises a reaction chamber, a ridged wave-guide and a separation plate. The ridged wave-guide is disposed on the reaction chamber, and comprises a frame portion, a ridge portion and a line-shaped slot. The line-shaped slot is disposed on a first side of the frame portion, and the ridge portion facing the line-shaped slot is disposed on a second side of the frame portion. The separation plate is disposed on the line-shaped slot. Moreover, the ridged wave-guide is suitable for concentrating microwave power, which is transmitted to the reaction chamber through the line-shaped slot in order to excite plasma.
    Type: Application
    Filed: May 29, 2008
    Publication date: June 18, 2009
    Applicant: Industrial Technology Research Institute
    Inventors: CHIH-CHEN CHANG, TUNG-CHUAN WU, FU-CHING TUNG, MUH-WANG LIANG, CHING-HUEI WU, CHAN-HSING LO, TEAN-MU SHEN, JUNG-CHEN CHIEN, JUNG-CHEN HO
  • Publication number: 20090090616
    Abstract: A system and a method for plasma enhanced thin film deposition are disclosed, in which the system comprises a plasma enhanced thin film deposition apparatus and a plasma process monitoring device. The plasma enhanced thin film deposition apparatus receives pulsed power and a reactive gas, whereby plasma discharging occurs to ionize the reactive gas into a plurality of radicals for thin film deposition. The plasma process monitoring device comprises an optical emission spectroscopy (OES) and a pulsed plasma modulation device, in which the OES detects spectrum intensities of the radicals and the pulsed plasma modulation device calculates a spectrum intensity ratio of the radicals so as to modulate the plasma duty time of pulsed power, thereby high deposition rate as well as real-time monitoring on thin film deposition quality can be achieved.
    Type: Application
    Filed: January 17, 2008
    Publication date: April 9, 2009
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: CHEN-CHUNG DU, JEN-RONG HUANG, MUH-WANG LIANG, CHIH-CHEN CHANG, SHENG-LANG LEE, CHING-HUEI WU, CHAN-HSING LO