Patents by Inventor Muhammed Shafi Pallachalil
Muhammed Shafi Pallachalil has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9401322Abstract: A structure having air gaps between interconnects is disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.Type: GrantFiled: July 25, 2011Date of Patent: July 26, 2016Assignee: Infineon Technologies AGInventors: Markus Naujok, Hermann Wendt, Alois Gutmann, Muhammed Shafi Pallachalil
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Patent number: 9330974Abstract: In one embodiment, a semiconductor device includes a first metal line disposed in a first metal level above a substrate. A second metal line is disposed in a second metal level disposed over the first metal level. A third metal line is disposed in a third metal level disposed over the second metal level. A through level via contacts the first metal line and the third metal line.Type: GrantFiled: October 27, 2010Date of Patent: May 3, 2016Assignee: Infineon Technologies AGInventors: Sunoo Kim, Muhammed Shafi Pallachalil, Moosung Chae, Erdem Kaltalioglu
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Publication number: 20120104622Abstract: In one embodiment, a semiconductor device includes a first metal line disposed in a first metal level above a substrate. A second metal line is disposed in a second metal level disposed over the first metal level. A third metal line is disposed in a third metal level disposed over the second metal level. A through level via contacts the first metal line and the third metal line.Type: ApplicationFiled: October 27, 2010Publication date: May 3, 2012Inventors: Sunoo Kim, Muhammed Shafi Pallachalil, Moosung Chae, Erdem Kaltalioglu
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Patent number: 8148235Abstract: Methods of forming air gaps between interconnects of integrated circuits and structures thereof are disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.Type: GrantFiled: November 13, 2009Date of Patent: April 3, 2012Assignee: Infineon Technologies AGInventors: Markus Naujok, Hermann Wendt, Alois Gutmann, Muhammed Shafi Pallachalil
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Patent number: 8013364Abstract: A structure having air gaps between interconnects is disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.Type: GrantFiled: October 15, 2009Date of Patent: September 6, 2011Assignee: Infineon Technologies AGInventors: Markus Naujok, Hermann Wendt, Alois Gutmann, Muhammed Shafi Pallachalil
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Publication number: 20100144112Abstract: Methods of forming air gaps between interconnects of integrated circuits and structures thereof are disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.Type: ApplicationFiled: November 13, 2009Publication date: June 10, 2010Inventors: Markus Naujok, Hermann Wendt, Alois Gutmann, Muhammed Shafi Pallachalil
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Publication number: 20100032841Abstract: A structure having air gaps between interconnects is disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.Type: ApplicationFiled: October 15, 2009Publication date: February 11, 2010Inventors: Markus Naujok, Hermann Wendt, Alois Gutmann, Muhammed Shafi Pallachalil
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Patent number: 7629225Abstract: Methods of forming air gaps between interconnects of integrated circuits and structures thereof are disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.Type: GrantFiled: June 13, 2005Date of Patent: December 8, 2009Assignee: Infineon Technologies AGInventors: Markus Naujok, Hermann Wendt, Alois Gutmann, Muhammed Shafi Pallachalil
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Publication number: 20060281295Abstract: Methods of forming air gaps between interconnects of integrated circuits and structures thereof are disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.Type: ApplicationFiled: June 13, 2005Publication date: December 14, 2006Inventors: Markus Naujok, Hermann Wendt, Alois Gutmann, Muhammed Shafi Pallachalil