Patents by Inventor Muhammed Shafi Pallachalil

Muhammed Shafi Pallachalil has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9401322
    Abstract: A structure having air gaps between interconnects is disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.
    Type: Grant
    Filed: July 25, 2011
    Date of Patent: July 26, 2016
    Assignee: Infineon Technologies AG
    Inventors: Markus Naujok, Hermann Wendt, Alois Gutmann, Muhammed Shafi Pallachalil
  • Patent number: 9330974
    Abstract: In one embodiment, a semiconductor device includes a first metal line disposed in a first metal level above a substrate. A second metal line is disposed in a second metal level disposed over the first metal level. A third metal line is disposed in a third metal level disposed over the second metal level. A through level via contacts the first metal line and the third metal line.
    Type: Grant
    Filed: October 27, 2010
    Date of Patent: May 3, 2016
    Assignee: Infineon Technologies AG
    Inventors: Sunoo Kim, Muhammed Shafi Pallachalil, Moosung Chae, Erdem Kaltalioglu
  • Publication number: 20120104622
    Abstract: In one embodiment, a semiconductor device includes a first metal line disposed in a first metal level above a substrate. A second metal line is disposed in a second metal level disposed over the first metal level. A third metal line is disposed in a third metal level disposed over the second metal level. A through level via contacts the first metal line and the third metal line.
    Type: Application
    Filed: October 27, 2010
    Publication date: May 3, 2012
    Inventors: Sunoo Kim, Muhammed Shafi Pallachalil, Moosung Chae, Erdem Kaltalioglu
  • Patent number: 8148235
    Abstract: Methods of forming air gaps between interconnects of integrated circuits and structures thereof are disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.
    Type: Grant
    Filed: November 13, 2009
    Date of Patent: April 3, 2012
    Assignee: Infineon Technologies AG
    Inventors: Markus Naujok, Hermann Wendt, Alois Gutmann, Muhammed Shafi Pallachalil
  • Patent number: 8013364
    Abstract: A structure having air gaps between interconnects is disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.
    Type: Grant
    Filed: October 15, 2009
    Date of Patent: September 6, 2011
    Assignee: Infineon Technologies AG
    Inventors: Markus Naujok, Hermann Wendt, Alois Gutmann, Muhammed Shafi Pallachalil
  • Publication number: 20100144112
    Abstract: Methods of forming air gaps between interconnects of integrated circuits and structures thereof are disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.
    Type: Application
    Filed: November 13, 2009
    Publication date: June 10, 2010
    Inventors: Markus Naujok, Hermann Wendt, Alois Gutmann, Muhammed Shafi Pallachalil
  • Publication number: 20100032841
    Abstract: A structure having air gaps between interconnects is disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.
    Type: Application
    Filed: October 15, 2009
    Publication date: February 11, 2010
    Inventors: Markus Naujok, Hermann Wendt, Alois Gutmann, Muhammed Shafi Pallachalil
  • Patent number: 7629225
    Abstract: Methods of forming air gaps between interconnects of integrated circuits and structures thereof are disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.
    Type: Grant
    Filed: June 13, 2005
    Date of Patent: December 8, 2009
    Assignee: Infineon Technologies AG
    Inventors: Markus Naujok, Hermann Wendt, Alois Gutmann, Muhammed Shafi Pallachalil
  • Publication number: 20060281295
    Abstract: Methods of forming air gaps between interconnects of integrated circuits and structures thereof are disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.
    Type: Application
    Filed: June 13, 2005
    Publication date: December 14, 2006
    Inventors: Markus Naujok, Hermann Wendt, Alois Gutmann, Muhammed Shafi Pallachalil