Abstract: In one embodiment, a charged particle beam writing apparatus includes a deflector deflecting a charged particle beam, a first correcting lens and a second correcting lens correcting a focus position of the charged particle beam, a focus correction amount calculator calculating a first correction amount for the focus position according to a change in a height position of a sample surface, and calculating a second correction amount for the focus position according to a change in shot size of the charged particle beam, a first DAC (digital to analog converter) amplifier applying a voltage for a ground potential based on the first correction amount to the first correcting lens, and a second DAC amplifier applying a voltage for a ground potential based on the second correction amount to the second correcting lens, an output of the second DAC amplifier being smaller than an output of the first DAC amplifier.

Abstract: In one embodiment, an aperture for inspecting a multi-beam allows passage of one beam among multi-beams applied in a multi-beam writing apparatus. The aperture includes a scattering layer that is provided with a through-hole through which the one beam passes, and by which the other beams are scattered, and an absorbing layer that is provided with an opening having a diameter greater than the diameter of the through-hole and that absorbs at least some of the beams entering it.

Abstract: According to one aspect of the present invention, a charged particle beam irradiation apparatus includes: a plurality of electrodes arranged in a magnetic field space of an electromagnetic lens and also arranged so as to surround a space on an outer side of a passing region of a charged particle beam; and a potential control circuit configured to control potentials of the plurality of electrodes so as to generate plasma in the space surrounded by the plurality of electrodes and so as to control movement of positive ions or electrons and negative ions generated by the plasma, wherein positive ions, electrons and negative ions, or active species are emitted from the space of the plasma.

Abstract: A charged-particle beam apparatus is provided with a cathode to emit charged particle beams, an anode to propagate the charged particle beams emitted from the cathode in a sample surface direction, an aperture to propagate a charged particle beam passing through an opening at a predetermined position and of a predetermined shape, among the charged particle beams passing through the anode, in the sample surface direction, and a first electrode that is disposed between the anode and the aperture, and is set at a first electric potential of a polarity repelling a polarity of an ion generated due to collision of a charged particle beam.

Abstract: A blanking device for multi charged particle beams includes a first substrate, in which plural first openings are formed in an array, to form multi-beams, a second substrate in which plural second openings are formed in an array, where a corresponding beam of the multi-beams passes through each of the plural second openings, plural control electrodes, which are on the second substrate and each of which is close to a corresponding one of the plural second openings and arranged not to be directly exposed to other second opening adjacent to the corresponding one of the plural second openings, to be switchably applied with first and second potentials, plural counter electrodes, each of which is facing a corresponding one of the plural control electrodes, to be applied with the second potential, and a shield film provided between the first substrate and the plural control electrodes.

Abstract: A multi-beam optical system adjustment method includes forming multi-beams by making a region including the whole of a plurality of openings in a shaping aperture array substrate irradiated by a charged particle beam, and making portions of the charged particle beam individually pass through a corresponding one of the plurality of openings, measuring a distortion of the multi-beams while variably changing the crossover height position of the multi-beams, measuring the crossover height position of the multi-beams where the distortion of the multi-beams is smaller than the others, and adjusting the height position of a limiting aperture substrate which limits passage of a beam deviated from the trajectory in the multi-beams to the crossover height position.

Abstract: According to one aspect of the present invention, an optical system adjustment method of an image acquisition apparatus includes: extracting one primary electron beam after another from primary electron beams at a plurality of preset positions among multiple primary electron beams; and adjusting, a first detector being capable of individually detecting multiple secondary electrons emitted due to irradiation of a target with the multiple primary electron beams, a trajectory of the one primary electron beam using a primary electron optics while detecting secondary electrons corresponding to the one primary electron beam for each of the primary electron beams extracted one by one using a movable second detector having an inspection surface of a size capable of detecting the multiple secondary electrons as a whole and arranged on an optical path for guiding the multiple secondary electrons to the first detector.

Abstract: A multiple charged particle beam apparatus includes: a first aperture array substrate to form multiple beams; a first grating lens that constitutes a concave lens by using the first aperture array substrate as a grating; a second aperture array substrate that allows the multiple beams to pass through; and a first limiting aperture substrate arranged in a position of a convergent point of the multiple beams between the first aperture array substrate and the second aperture array substrate, wherein a first aperture array image having passed through the first shaping aperture array substrate is formed on the second aperture array substrate by a lens action including a magnetic field distribution generated between the first aperture array substrate and the second aperture array substrate and having opposite signs and same magnitude and an electric field distribution generated by the first grating lens.

Abstract: A charged particle beam writing method includes forming an aperture image by making a charged particle beam pass through an aperture substrate, changing, in the state where a plurality of crossover positions of the charged particle beam and positions of all of one or more intermediate images of the aperture image are adjusted to matching positions with respect to the aperture image with the first magnification, magnification of the aperture image from the first magnification to the second magnification by using a plurality of lenses while maintaining the last crossover position of the charged particle beam and the position of the last intermediate image of the aperture image to be fixed, and forming, using an objective lens, the aperture image whose magnification has been changed to the second magnification on the surface of the target object, and writing the aperture image.

Abstract: An electron beam irradiation apparatus includes a first electrode being annular, arranged along the optical axis of the electron beam, at the downstream from the deflector, and in the magnetic field of the objective lens, to which a first potential being positive is variably applied, a second electrode being annular, arranged in the magnetic field of the objective lens and between the deflector and the first electrode, to which a second potential being positive and higher than the first potential is applied, and a third electrode being annular, arranged in the magnetic field of the objective lens and to be opposite to the second electrode with respect to the first electrode, to which a third potential lower than the first potential is applied.

Abstract: A multi charged particle beam writing method includes performing ON/OFF switching of a beam by an individual blanking system for the beam concerned, for each beam in multi-beams of charged particle beam, with respect to each time irradiation of irradiation of a plurality of times, by using a plurality of individual blanking systems that respectively perform beam ON/OFF control of a corresponding beam in the multi-beams, and performing blanking control, in addition to the performing ON/OFF switching of the beam for the each beam by the individual blanking system, with respect to the each time irradiation of the irradiation of the plurality of times, so that the beam is in an ON state during an irradiation time corresponding to irradiation concerned, by using a common blanking system that collectively performs beam ON/OFF control for a whole of the multi-beams.

Abstract: According to one aspect of the present invention, a charged particle beam lithography method includes forming, such that a shape identical to a first figure pattern obtained using a first charged particle beam having a first resolution can be obtained by superimposing a plurality of second figure patterns, said plurality of second figure patterns that have different widths and are obtained by using a second charged particle beam having a second resolution higher than the first resolution; and performing multiple writing of the plurality of second figure patterns, which are stacked, by using the second charged particle beam.

Abstract: According to one embodiment, an inspection apparatus includes an irradiation device irradiating an inspection target substrate with multiple beams, a detector detecting each of a plurality of charged particle beams formed by charged particles emitted from the inspection target substrate as an electrical signal, and a comparison processing circuitry performing pattern inspection by comparing image data of a pattern formed on the inspection target substrate, the pattern being reconstructed in accordance with the detected electrical signals, and reference image data. The detector includes a plurality of detection elements that accumulate charges, and a detection circuit that reads out the accumulated charges. The plurality of detection elements are grouped into a plurality of groups.

Abstract: A multi charged particle beam writing method includes performing ON/OFF switching of a beam by an individual blanking system for the beam concerned, for each beam in multi-beams of charged particle beam, with respect to each time irradiation of irradiation of a plurality of times, by using a plurality of individual blanking systems that respectively perform beam ON/OFF control of a corresponding beam in the multi-beams, and performing blanking control, in addition to the performing ON/OFF switching of the beam for the each beam by the individual blanking system, with respect to the each time irradiation of the irradiation of the plurality of times, so that the beam is in an ON state during an irradiation time corresponding to irradiation concerned, by using a common blanking system that collectively performs beam ON/OFF control for a whole of the multi-beams.

Abstract: A blanking deflector includes a first electrode being plate-like, a second electrode electrically separated from the first electrode, and arranged such that a first space is formed between the first and second electrodes, and a third electrode electrically separated from the first electrode, and arranged such that a second space, sufficiently wider than the first space, is formed between the first and third electrodes, wherein a transmission line, in which the second and third electrodes are electrically connected at, at least, input and output sides, is formed by the first, second, and third electrodes, multi-beams of a charged particle beam are made to pass through the second space between the first and third electrodes, and the multi-beams are deflected for blanking control by a voltage signal applied from the input side to between the first electrode, and a connected group of the second and third electrodes electrically connected.

Abstract: A multi-beam optical system adjustment method includes forming multi-beams by making a region including the whole of a plurality of openings in a shaping aperture array substrate irradiated by a charged particle beam, and making portions of the charged particle beam individually pass through a corresponding one of the plurality of openings, measuring a distortion of the multi-beams while variably changing the crossover height position of the multi-beams, measuring the crossover height position of the multi-beams where the distortion of the multi-beams is smaller than the others, and adjusting the height position of a limiting aperture substrate which limits passage of a beam deviated from the trajectory in the multi-beams to the crossover height position.

Abstract: A multi charged particle beam irradiation apparatus includes a shaping aperture array substrate, where plural openings are formed as an aperture array, to shape multi-beams by making a region including entire plural openings irradiated by a charged particle beam, and making portions of a charged particle beam individually pass through a corresponding one of the plural openings; and a plurality of stages of lenses, arranged such that a reduction ratio of multi-beams by at least one lens of a stage before the last stage lens is larger than that of the multi-beams by the last stage lens, to correct distortion of a formed image obtained by forming an image of the aperture array by the multi-beams, and to form the image of the aperture array by the multi-beams at a height position between the last stage lens and a last-but-one stage lens, and at the surface of a target object.

Abstract: In one embodiment, an aperture for inspecting a multi-beam allows passage of one beam among multi-beams applied in a multi-beam writing apparatus. The aperture includes a scattering layer that is provided with a through-hole through which the one beam passes, and by which the other beams are scattered, and an absorbing layer that is provided with an opening having a diameter greater than the diameter of the through-hole and that absorbs at least some of the beams entering it.

Abstract: An inspection apparatus according to an embodiment includes an irradiation part configured to irradiate an inspection target substrate with multiple beams including energy beams, a detector, on which a plurality of charged particle beams of charged particles released from the inspection target substrate are imaged, configured to detect each of the charged particle beams as an electrical signal, and a comparing unit configured to compare reference image data and image data that is reproduced based on the detected electrical signals and that represents patterns formed on the inspection target substrate to inspect the patterns. The detector includes a plurality of detecting elements corresponding one-to-one to the charged particle beams. The detecting elements each have a size greater than a size that covers a beam blur of each charged particle beam imaged on the detector.

Abstract: A blanking device for multi charged particle beams includes a first substrate, in which plural first openings are formed in an array, to form multi-beams, a second substrate in which plural second openings are formed in an array, where a corresponding beam of the multi-beams passes through each of the plural second openings, plural control electrodes, which are on the second substrate and each of which is close to a corresponding one of the plural second openings and arranged not to be directly exposed to other second opening adjacent to the corresponding one of the plural second openings, to be switchably applied with first and second potentials, plural counter electrodes, each of which is facing a corresponding one of the plural control electrodes, to be applied with the second potential, and a shield film provided between the first substrate and the plural control electrodes.