Abstract: An HGA protecting method and member and method of implementing the protecting method and member in a hard disk drive. The HGA includes an actuator, at least one pair of suspensions coupled to the actuator, a flexure having a stationary end fixed to each of the suspensions and a free end, and a slider attached between the stationary end and the free end of the flexure. The HGA protecting member may include a finger restricting excessive movement of the suspension. The finger may further have a flexure supporting portion supporting the free end of the flexure. The HGA protecting member may also be a removable assembly that may be removed after the HGA after assembly of the hard disk drive is complete.

Abstract: Provided are a disk spacer for an information storage device and a spindle motor assembly employing the disk spacer. The spindle motor assembly includes a spindle motor, one or more data storage disks mounted around the spindle motor, a disk clamp coupled to the spindle motor and fixing the disk clamp, and a disk spacer mounted around the spindle motor and supporting the disk, wherein the disk spacer has a groove of a predetermined depth formed along an outer peripheral surface thereof, which does not contact the disks, and the groove is tapered as it is closer to an inner peripheral surface of the disk spacer away from the outer peripheral surface of the disk spacer. Since impacts and vibrations delivered to the disks are scattered by the disk spacer, the wobble of the disk due to the impacts and vibrations is reduced.

Abstract: A semiconductor device and a method for manufacturing the same are disclosed, in which an insulating layer may be formed in a strained silicon layer under source/drain regions to substantially overcome conventional problems resulting from a channel decrease in the semiconductor device.

Abstract: A hermetic type compressor in which manufacturing costs can be reduced, wherein a connection between stator coils wound around a stator and lead wires of a terminal block, is prevented from being cut, and a manufacturing method of the same. The compressor includes a sealed casing, a compression device, a driving unit having a stator, including stator coils wound around a core and a rotor rotating within the stator to drive the compression device, lead wires extended from a terminal block coupled with the a terminal installed to the sealed casing to supply electric current, and a connected part formed by which the stator coils are made by coating aluminum wires with enamel, the ends of the stator coils whose enameling is removed are connected to the lead wires to supply the electric current, and the entire ends of the aluminum wires whose enameling is removed and exposed are inserted into a joint band to connect the ends of the stator coils to ends of the lead wires.

Abstract: A method for fabricating a semiconductor device employing a selectivity poly deposition is disclosed. The disclosed method comprises depositing selectivity poly on a gate poly and source/drain regions of the silicon substrate, and forming salicide regions on the gate and active regions from the deposited selectivity poly. Accordingly, the present invention employing selectivity poly deposition can reduce or minimize contact surface resistance and improve the electrical characteristics of the semiconductor device by reducing the surface resistance in a miniature semiconductor device. In addition, because the size of the gate electrode is getting small, the present invention can be used as an essential part of the future generations of nano-scale technology. Moreover, mass semiconductor production systems can promptly employ the present invention with existing equipment.

Abstract: Disclosed herein are compositions useful in forming organic active patterns that may, in turn, be incorporated in organic memory devices. The compositions comprise N-containing conjugated electroconductive polymer(s), photoacid generator(s) and organic solvent(s) capable of dissolving suitable quantifies of both the electroconductive polymer and the photoacid generator. Also disclosed are methods for patterning organic active layers formed using one or more of the compositions to produce organic active patterns, portions of which may be arranged between opposed electrodes to provide organic memory cells. The methods include directly exposing and developing the organic active layer to obtain fine patterns without the use of a separate masking pattern, for example, a photoresist pattern, thereby tending to simplify the fabrication process and reduce the associated costs.

Abstract: A method for communicating between a network and a dual receiver UE includes receiving first signaling from a first network node at a first frequency, and receiving second signaling via a PtM control channel from a second network node at a second frequency. The method further includes receiving a request from the second network node at the second frequency, such that the request is carried on the PtM control channel, and transmitting to the first network node a response to the request from the second network node. An alternative method includes receiving communications from a first network node, and identifying that the first network node lacks uplink capabilities. This method may further include identifying that the first network node provides a MBMS service, and receiving the MBMS service from the first network node despite the identification of the lack of uplink capabilities.

Abstract: A method for communicating between a network and a dual receiver UE includes receiving first signaling from a first network node at a first frequency, and receiving second signaling via a PtM control channel from a second network node at a second frequency. The method further includes receiving a request from the second network node at the second frequency, such that the request is carried on the PtM control channel, and transmitting to the first network node a response to the request from the second network node. An alternative method includes receiving communications from a first network node, and identifying that the first network node lacks uplink capabilities. This method may further include identifying that the first network node provides a MBMS service, and receiving the MBMS service from the first network node despite the identification of the lack of uplink capabilities.

Abstract: Provided is a semiconductor device. The semiconductor device includes a semiconductor substrate, a plurality of contact metals, and a gate electrode. The semiconductor substrate has an active region and a dummy active region, and a plurality of contact metals are formed in the active region. A gate electrode is located between the contact metals in the active region. A first distance between the active region and the dummy active region, and a second distance between an edge of the contact metal and an edge of the active region are set such that a channel characteristic of the active region is improved.

Abstract: In a wireless mobile communications system, a method of transmitting and receiving radio access information that allows a faster and an efficient way of establishing a radio connection between a terminal and a target base station while performing a handover for the terminal to a cell of the target base station. The network transmits in advance, the radio access information and the like, to the terminal so that the terminal can be connected with the target cell in a faster manner which minimizes the total time for the handover process.

Abstract: The present invention relates to communicating a message in a mobile communication system. Preferably, the present invention comprises requesting radio resources for transmitting at least one message, receiving a response to the request for radio resources, transmitting a first message for requesting a first layer connection to a first node, and transmitting a second message for requesting a second layer connection with a second node prior to establishing the first layer connection.

Abstract: Disclosed are an isolation structure and a method for forming the same. The present isolation structure includes a substrate having a first semiconductor layer having a first lattice parameter, a second semiconductor layer having a second lattice parameter larger than the first lattice parameter, and a strained semiconductor layer; a well in the substrate; a plurality of isolation layers in the strained semiconductor layer and the second semiconductor layer, defining an active region; and a plurality of punch stop layers under the isolation layers.

Abstract: A strained channel transistor according to the present invention includes a semiconductor substrate, a semiconductor layer having a lattice constant larger than the lattice constant of the semiconductor substrate on the semiconductor substrate, a strained channel layer on the semiconductor layer, and one or more epitaxial layers on sides of the strained channel layer, configured to change the lattice structure of the strained channel layer. Trenches may be formed in the strained channel layer, and the epitaxial layer(s) formed in the trenches, and stress from the epitaxial layer may increase the strained channel layer's lattice distance, and in the end, enhance the mobility of charge carriers through the channel.