Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be stably etched with a high selection ratio relative to a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.

Abstract: The present invention relates to a heteroaryl derivative compound and a use thereof. Since the heteroaryl derivative of the present invention exhibits excellent inhibitory activity against EGFR, the heteroaryl derivative can be usefully used as a therapeutic agent for EGFR-associated diseases.

Abstract: The present disclosure relates to strains of Thraustochytrium genus, including a high content of polyunsaturated fatty acids, and a method of producing a biomass using the same. According to the novel CJM01 microalgae of Thraustochytrium genus of the present disclosure, the content of lipids in the biomass and the content of unsaturated fatty acid such as docosahexaenoic acid in the biomass are high, so that the microalgae itself, a biomass produced by the culturing and fermentation of microalgae, a condensate of the biomass, and a dried product of the biomass are very useful as a feed composition.

Abstract: The present disclosure relates to strains of Thraustochyrium genus, including a high content of polyunsaturated fatty acids, and a method of producing a biomass using the same. According to the novel CJM01 microalgae of Thraustochyrium genus of the present disclosure, the content of lipids in the biomass and the content of unsaturated fatty acid such as docosahexaenoic acid in the biomass are high, so that the microalgae itself, a biomass produced by the culturing and fermentation of microalgae, a condensate of the biomass, and a dried product of the biomass are very useful as a feed composition.

Abstract: A semiconductor package may be provided. The semiconductor package may include a substrate formed with one or more connection pads. The semiconductor package may include a semiconductor device including at least one bump. The semiconductor package may include an anisotropic conductive fabric including conductive fibers and configured to electrically couple the at least one connection pad to the at least one bump.

Abstract: A semiconductor package may be provided. The semiconductor package may include a substrate formed with one or more connection pads. The semiconductor package may include a semiconductor device including at least one bump. The semiconductor package may include an anisotropic conductive fabric including conductive fibers and configured to electrically couple the at least one connection pad to the at least one bump.

Abstract: A stack package includes a first semiconductor chip first pads and second pads disposed thereon and a second semiconductor chip having third pads and fourth pads electrically connected with the second pads disposed thereon. Capacitors are interposed between the first semiconductor chip and the second semiconductor chip, and include first electrodes electrically connected with the first pads of the first semiconductor chip, second electrodes electrically connected with the third pads of the second semiconductor chip, and dielectrics interposed between the first electrodes and the second electrodes.

Abstract: The present invention relates to a substrate for a semiconductor package and a semiconductor package having the same. A substrate for a semiconductor package includes a substrate body; a contact pad group including a plurality of contact pads parallely arranged at a determined interval on a surface of the substrate body; dummy contact pads arranged at both sides of the contact pad group, respectively; and solder resist patterns covering the substrate body and having openings exposing the dummy contact pads and the contact pad group. When bumping the semiconductor chip having the bumps to the solders arranged on the contact pads formed on the substrate, the bumping defect caused due to different volumes of each solder can be prevented.

Abstract: A semiconductor package includes a semiconductor chip having a first surface, a second surface located opposite the first surface, and side surfaces connecting the first and second surfaces. The semiconductor chip includes bonding pads disposed on the first surface and having a molding member formed to cover the first surface of the semiconductor chip. The molding member is formed so as to expose the side surfaces of the semiconductor chip. The semiconductor chip also includes bonding members having first ends electrically connected to the respective bonding pads and second ends that are connected to and opposite the first ends. The second ends are exposed from side surfaces of the molding member after passing through the molding member so as to allow various electrical connections.

Abstract: A printed circuit board and a flip chip package using the same are designed to minimize thermal stress due to different thermal coefficients present in areas having metal lines and solder resist versus other areas on the printed circuit board. The printed circuit board includes an insulation layer; a first metal line formed on one surface of the insulation layer and having at one end thereof a bump land and a projection which integrally extends from the bump land; a second metal line formed on the other surface of the insulation layer and having at one end thereof a ball land; a via metal line formed through the insulation layer to connect the first and second metal lines to each other; and solder resists formed on the upper and lower surfaces of the insulation layer to expose the bump land and the ball land.

Abstract: A printed circuit board and a flip chip package using the same are designed to minimize thermal stress due to different thermal coefficients present in areas having metal lines and solder resist versus other areas on the printed circuit board. The printed circuit board includes an insulation layer; a first metal line formed on one surface of the insulation layer and having at one end thereof a bump land and a projection which integrally extends from the bump land; a second metal line formed on the other surface of the insulation layer and having at one end thereof a ball land; a via metal line formed through the insulation layer to connect the first and second metal lines to each other; and solder resists formed on the upper and lower surfaces of the insulation layer to expose the bump land and the ball land.

Abstract: A semiconductor package may include a substrate with a first surface over which bond fingers are formed. At least two semiconductor chips may be stacked on the first surface of the substrate and each chip may have via holes. The semiconductor chips may be stacked such that the respective via holes expose the respective bond fingers of the substrate. Through electrodes may be formed in the via holes. The through electrodes may comprise carbon nanotubes grown from the exposed bond fingers of the substrate, where the through electrodes may be electrically connected with the semiconductor chips.

Abstract: A stack package includes a first semiconductor chip first pads and second pads disposed thereon and a second semiconductor chip having third pads and fourth pads electrically connected with the second pads disposed thereon. Capacitors are interposed between the first semiconductor chip and the second semiconductor chip, and include first electrodes electrically connected with the first pads to of the first semiconductor chip, second electrodes electrically connected with the third pads of the second semiconductor chip, and dielectrics interposed between the first electrodes and the second electrodes.

Abstract: A semiconductor package includes a semiconductor chip having a first surface, a second surface located opposite the first surface, and side surfaces connecting the first and second surfaces. The semiconductor chip includes bonding pads disposed on the first surface and having a molding member formed to cover the first surface of the semiconductor chip. The molding member is formed so as to expose the side surfaces of the semiconductor chip. The semiconductor chip also includes bonding members having first ends electrically connected to the respective bonding pads and second ends that are connected to and opposite the first ends. The second ends are exposed from side surfaces of the molding member after passing through the molding member so as to allow various electrical connections.

Abstract: A flip chip package includes a substrate and a semiconductor chip. The substrate includes a substrate body, a metal wiring having a terminal part some of which is disposed in the substrate body, a solder resist pattern formed on the substrate body with an opening for exposing the terminal part, and an organic anti-oxidation layer for covering the terminal part. The semiconductor chip has a bump formed through (e.g., penetrates) the organic anti-oxidation layer and is electrically connected to the terminal part. The present invention prevents oxidation of the terminal part and allows easy coupling of a bump of a semiconductor chip and the terminal part of the substrate, since an anti-oxidation layer including an organic matter is formed over a surface of a terminal part including copper which is easily oxidized.

Abstract: A strip level substrate is manufactured by: applying solder resist on a substrate including a plurality of unit substrate divided by a scribe line; and patterning the applied solder resist to expose an electrode terminal and a ball land in each unit substrate, wherein the patterning of the solder resist is performed to be removed together with a solder resist part applied on the scribe line in order to reduce an early warpage of the strip level substrate.

Abstract: A flip chip package includes a substrate and a semiconductor chip. The substrate includes a substrate body, a metal wiring having a terminal part some of which is disposed in the substrate body, a solder resist pattern formed on the substrate body with an opening for exposing the terminal part, and an organic anti-oxidation layer for covering the terminal part. The semiconductor chip has a bump formed through (e.g., penetrates) the organic anti-oxidation layer and is electrically connected to the terminal part. The present invention prevents oxidation of the terminal part and allows easy coupling of a bump of a semiconductor chip and the terminal part of the substrate, since an anti-oxidation layer including an organic matter is formed over a surface of a terminal part including copper which is easily oxidized.

Abstract: The present invention relates to a substrate for a semiconductor package and a semiconductor package having the same. A substrate for a semiconductor package includes a substrate body; a contact pad group including a plurality of contact pads parallely arranged at a determined interval on a surface of the substrate body; dummy contact pads arranged at both sides of the contact pad group, respectively; and solder resist patterns covering the substrate body and having openings exposing the dummy contact pads and the contact pad group. When bumping the semiconductor chip having the bumps to the solders arranged on the contact pads formed on the substrate, the bumping defect caused due to different volumes of each solder can be prevented.

Abstract: A semiconductor package is presented having a substrate, a semiconductor chip, an under-fill material, and a solder resist pattern. The substrate having a substrate body, wiring lines which are located on a first surface of the substrate body and which have connection pad parts, and ball lands which are located on a second surface of the substrate body, facing away from the first surface, and which are electrically connected with the wiring lines. The semiconductor chip having bumps which are electrically connected with the respective connection pad parts. The under-fill material filling a space between the substrate and the semiconductor chip. The solder resist pattern is located on the first surface and has first openings which expose the connection pad parts and has at least one second opening which exposes a portion of the substrate body to provide an enhancement of adhesion force between the under-fill material and the substrate body.

Abstract: A strip level substrate is manufactured by: applying solder resist on a substrate including a plurality of unit substrate divided by a scribe line; and patterning the applied solder resist to expose an electrode terminal and a ball land in each unit substrate, wherein the patterning of the solder resist is performed to be removed together with a solder resist part applied on the scribe line in order to reduce an early warpage of the strip level substrate.