Abstract: A thin and compact liquid crystal display device includes a liquid crystal display panel with first and second substrates, each having a display area and a non-display area, which are bonded to each other and separated from each other by liquid crystal material. A thermally conductive layer is formed on any one of the first and second substrates to prevent the liquid crystal material from becoming too cool, thereby preventing temperature-dependent formation of bubbles within the liquid crystal material. Such a liquid crystal display device may be simply fabricated.

Abstract: An array substrate for use in an X-ray sensing device includes a silicon insulator on a thin film transistor. The silicon insulator is silicon nitride or silicon oxide that has a strong adhesive strength to the active layer of the thin film transistor. Thereafter, an organic material, as a planarizing layer, is formed on the silicon insulator, so that the leakage current, which has a bad influence on the operation of the thin film transistor, can be prevented.

Abstract: An array substrate for use in an X-ray sensing device includes a silicon insulator on a thin film transistor. The silicon insulator is silicon nitride or silicon oxide that has a strong adhesive strength to the active layer of the thin film transistor. Thereafter, an organic material, as a planarizing layer, is formed on the silicon insulator, so that the leakage current, which has a bad influence on the operation of the thin film transistor, can be prevented.

Abstract: An array substrate for use in an X-ray sensing device includes a silicon insulator on a thin film transistor. The silicon insulator is silicon nitride or silicon oxide that has a strong adhesive strength to the active layer of the thin film transistor. Thereafter, an organic material, as a planarizing layer, is formed on the silicon insulator, so that the leakage current, which has a bad influence on the operation of the thin film transistor, can be prevented.

Abstract: An array substrate for use in an X-ray sensing device includes a silicon insulator on a thin film transistor. The silicon insulator is silicon nitride or silicon oxide that has a strong adhesive strength to the active layer of the thin film transistor. Thereafter, an organic material, as a planarizing layer, is formed on the silicon insulator, so that the leakage current, which has a bad influence on the operation of the thin film transistor, can be prevented.

Abstract: An array substrate for use in an X-ray sensing device includes a silicon insulator on a thin film transistor. The silicon insulator is silicon nitride or silicon oxide that has a strong adhesive strength to the active layer of the thin film transistor. Thereafter, an organic material, as a planarizing layer, is formed on the silicon insulator, so that the leakage current, which has a bad influence on the operation of the thin film transistor, can be prevented.

Abstract: An X-ray detecting device and a fabricating method thereof capable of preventing a short between a lower electrode of a capacitor and a data line are presented. In the device, a data line insulating layer is formed to cover the data line and a gate line. The gate line is exposed through a contact hole defined in the data line insulating. Then a lower electrode is formed on the data line insulating layer and is electrically connected to the gate line via the contact hole. Subsequently, an upper electrode is formed to complete the device. The data line insulating layer prevents a short between the data line and the lower electrode when residual conductive materials are formed when the lower electrode is formed.

Abstract: A liquid crystal display device that is capable of improving an anti-impact and anti-corrosion. In the device, corner cutting keys are provided to cut the corners of a liquid crystal panel. Also, verniers are provided to grind the corner of the liquid crystal panel.

Abstract: An array substrate for use in an X-ray sensing device includes a silicon insulator on a thin film transistor. The silicon insulator is silicon nitride or silicon oxide that has a strong adhesive strength to the active layer of the thin film transistor. Thereafter, an organic material, as a planarizing layer, is formed on the silicon insulator, so that the leakage current, which has a bad influence on the operation of the thin film transistor, can be prevented.

Abstract: An X-ray detecting device and a fabricating method thereof capable of preventing a short between a lower electrode of a capacitor and a data line are presented. In the device, a data line insulating layer is formed to cover the data line and a gate line. The gate line is exposed through a contact hole defined in the data line insulating. Then a lower electrode is formed on the data line insulating layer and is electrically connected to the gate line via the contact hole. Subsequently, an upper electrode is formed to complete the device. The data line insulating layer prevents a short between the data line and the lower electrode when residual conductive materials are formed when the lower electrode is formed.