Patents by Inventor Myung Jin Jung

Myung Jin Jung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180185436
    Abstract: The present invention relates to a peptide for preventing or treating inflammatory diseases and a use thereof. According to the novel dimeric or trimeric peptide according to the present invention, it is possible to not only exhibit an excellent therapeutic effect through anti-inflammatory action but also have a very small-sized peptide, thereby minimizing side effects due to the administration of external substances. Therefore, it is expected that the peptide can be used as an active substance that can replace existing therapeutic agents for inflammatory diseases.
    Type: Application
    Filed: February 27, 2017
    Publication date: July 5, 2018
    Inventors: Dae Ho CHO, Kyung Eun KIM, Sun Young PARK, Myung Jin JUNG, Joo Hyun LEE
  • Publication number: 20180032541
    Abstract: An operating method of a host includes receiving a request for secure deletion of a first file stored in a storage system, providing an invalidation command to the storage system for invalidating data of the first file, providing an erase command to the storage system for erasing invalidated data included in the storage system, and performing a deletion operation, which is executable on an operating system of the host, on the first file which is deleted by the erase command.
    Type: Application
    Filed: April 10, 2017
    Publication date: February 1, 2018
    Inventors: Jin-hwan Park, Chan-sol Kim, Myung-jin Jung, Ji-soo Kim, Kyung-ho Kim, Pil-sung Kang, Bong-jun Choi, Chae-won Yu, So-jeong Lee
  • Publication number: 20180033939
    Abstract: Provided are: a compound semiconductor thermoelectric material, having excellent thermoelectric conversion performance by having an excellent power factor and ZT value, and in particular, having excellent thermoelectric conversion performance at a low temperature; a method for manufacturing the same; and a thermoelectric module, a thermoelectric generator, or a thermoelectric cooling device, etc. using the same. The compound semiconductor thermoelectric material according to the present invention comprises: an n-type compound semiconductor matrix; and n-type particles which are dispersed in the matrix, are compound semiconductors which are different from the matrix, and have an average particle size of 1 ?m to 100 ?m.
    Type: Application
    Filed: July 21, 2016
    Publication date: February 1, 2018
    Applicant: LG CHEM, LTD.
    Inventors: O-Jong KWON, Hyun-Woo CHOI, Byung-Kyu LIM, Myung-Jin JUNG, Cheol-Hee PARK
  • Publication number: 20170075600
    Abstract: A method of operating a data storage device performing garbage collection in response to locality information for pages of a data block. The method includes acquiring mapping table information for the plurality of pages, and determining validity of each one of the plurality of pages while scanning mapping tables indicated by mapping table information associated with the plurality of pages.
    Type: Application
    Filed: September 6, 2016
    Publication date: March 16, 2017
    Inventors: MYUNG JIN JUNG, SANG YOON OH, HYUN SIK YUN, HYUN JIN CHOI
  • Publication number: 20170031632
    Abstract: A data storage device includes a non-volatile memory device and a controller configured to receive a command from a host and to control an operation of the non-volatile memory device based on the command. The controller includes a processor configured to receive and process the command and an address extractor configured to extract address information from the command and to output the address information to the processor before the processor processes the command.
    Type: Application
    Filed: July 5, 2016
    Publication date: February 2, 2017
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyun Sik YUN, Sang Yoon OH, Myung Jin JUNG, Hyun Jin CHOI
  • Patent number: 9149239
    Abstract: An apparatus and method for providing a 3D stereoscopic image is provided. The apparatus may provide a 3D stereoscopic image generated based on two projection images imaged at different positions.
    Type: Grant
    Filed: April 10, 2013
    Date of Patent: October 6, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kang Eui Lee, Young Hun Sung, Myung Jin Jung, Jong Ha Lee
  • Publication number: 20140112430
    Abstract: An apparatus and method for providing a 3D stereoscopic image is provided. The apparatus may provide a 3D stereoscopic image generated based on two projection images imaged at different positions.
    Type: Application
    Filed: April 10, 2013
    Publication date: April 24, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kang Eui LEE, Young Hun SUNG, Myung Jin JUNG, Jong Ha LEE
  • Patent number: 8102614
    Abstract: A storage system is disclosed and related methods of reading/writing data are disclosed. The storage system includes a main data storage medium, and first and second buffers storing data to be stored on the main data storage medium, as well as a controller defining a data I/O path. The data I/O path may be defined in relation to a detected operating state of the main data storage medium.
    Type: Grant
    Filed: November 18, 2010
    Date of Patent: January 24, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-Hyun Song, Young-Joon Choi, Bum-Soo Kim, Myung-Jin Jung
  • Patent number: 8028120
    Abstract: A method is for recovering a block mapping table in a system including a flash memory device, where the block mapping table utilizes address mapping in accordance with a wear-leveling scheme. The method includes reading block arrangement information from the flash memory device for the wear-leveling scheme, restoring the block mapping table with reference to allocation block information included in the block arrangement information and scanning address allocation information included in spare regions of erased blocks of the flash memory device with reference to erased block information included in the block arrangement information and updating the block mapping table in accordance with the scanned address allocation information.
    Type: Grant
    Filed: January 17, 2007
    Date of Patent: September 27, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yeon-Jin Mo, Jang-Hwan Kim, Dong-Hyun Song, Shea-Yun Lee, Jae-Hyun Hwang, Myung-Jin Jung
  • Publication number: 20110063748
    Abstract: A hard disk drive is disclosed and related methods of reading/writing data are disclosed. The hard disk drive includes a disk serving as a main data storage medium, and first and second buffers storing data to be stored on the disk, as well as a controller defining a data I/O path in relation to a detected operating state of the hard disk drive.
    Type: Application
    Filed: November 18, 2010
    Publication date: March 17, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dong-Hyun SONG, Young-Joon CHOI, Bum-Soo KIM, Myung-Jin JUNG
  • Patent number: 7890550
    Abstract: Example embodiments provide a garbage collection method which includes applying a weight to each of at least two or more factors to calculate garbage collection costs. A hash table is configured using the calculated garbage collection costs. The method further includes searching a block having the lowest garbage collection cost from the hash table and performing garbage collection on the searched block.
    Type: Grant
    Filed: December 28, 2006
    Date of Patent: February 15, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Myung-Jin Jung, Jang-Hwan Kim, Dong-Hyun Song, Shea-Yun Lee, Yeon-Jin Mo, Jae-Hyun Hwang
  • Patent number: 7864465
    Abstract: A hard disk drive is disclosed and related methods of reading/writing data are disclosed. The hard disk drive includes a disk serving as a main data storage medium, and first and second buffers storing data to be stored on the disk, as well as a controller defining a data I/O path in relation to a detected operating state of the hard disk drive.
    Type: Grant
    Filed: December 19, 2008
    Date of Patent: January 4, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-Hyun Song, Young-Joon Choi, Bum-Soo Kim, Myung-Jin Jung
  • Patent number: 7838934
    Abstract: A semiconductor device and a method for manufacturing the same are disclosed, in which an insulating layer may be formed in a strained silicon layer under source/drain regions to substantially overcome conventional problems resulting from a channel decrease in the semiconductor device.
    Type: Grant
    Filed: October 17, 2007
    Date of Patent: November 23, 2010
    Assignee: Dongbu Electronics Co., Ltd.
    Inventor: Myung Jin Jung
  • Patent number: 7702844
    Abstract: A method for minimizing the degradation of performance upon accessing a flash memory using a logical-physical mapping scheme, and a method for efficiently storing and managing information on logical-physical mapping in a flash memory. A method for writing data in a flash memory includes determining whether a sector is empty in a physical page having a most recently written logical page number of data to be written, the offset of the sector matching that of the data to be written; if the sector is empty, writing the data in the sector to the physical page; and if the sector is not empty, selecting an empty physical page to write the data to a sector in the selected empty physical page of which the offset matches that of the data to be written and writing a logical page number for the data to the selected empty physical page.
    Type: Grant
    Filed: December 22, 2004
    Date of Patent: April 20, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Tae-sun Chung, Ji-hyun In, Myung-jin Jung
  • Patent number: 7696039
    Abstract: A method for fabricating a semiconductor device employing a selectivity poly deposition is disclosed. The disclosed method comprises depositing selectivity poly on a gate poly and source/drain regions of the silicon substrate, and forming salicide regions on the gate and active regions from the deposited selectivity poly. Accordingly, the present invention employing selectivity poly deposition can reduce or minimize contact surface resistance and improve the electrical characteristics of the semiconductor device by reducing the surface resistance in a miniature semiconductor device. In addition, because the size of the gate electrode is getting small, the present invention can be used as an essential part of the future generations of nano-scale technology. Moreover, mass semiconductor production systems can promptly employ the present invention with existing equipment.
    Type: Grant
    Filed: May 31, 2007
    Date of Patent: April 13, 2010
    Assignee: Dongbu Electronics Co., Ltd.
    Inventor: Myung Jin Jung
  • Patent number: D761466
    Type: Grant
    Filed: April 16, 2015
    Date of Patent: July 12, 2016
    Assignee: Hyundai Motor Company
    Inventors: Oh Young Kwon, Gwon Hak Lee, Hee Joon An, Hae Ryun Sohn, Yu Ra Cha, Myung Jin Jung
  • Patent number: D763486
    Type: Grant
    Filed: April 16, 2015
    Date of Patent: August 9, 2016
    Assignee: Hyundai Motor Company
    Inventors: Oh Young Kwon, Gwon Hak Lee, Hee Joon An, Hae Ryun Sohn, Yu Ra Cha, Myung Jin Jung
  • Patent number: D763487
    Type: Grant
    Filed: April 16, 2015
    Date of Patent: August 9, 2016
    Assignee: Hyundai Motor Company
    Inventors: Oh Young Kwon, Gwon Hak Lee, Hee Joon An, Hae Ryun Sohn, Yu Ra Cha, Myung Jin Jung
  • Patent number: D763488
    Type: Grant
    Filed: April 16, 2015
    Date of Patent: August 9, 2016
    Assignee: Hyundai Motor Company
    Inventors: Oh Young Kwon, Gwon Hak Lee, Hee Joon An, Hae Ryun Sohn, Yu Ra Cha, Myung Jin Jung
  • Patent number: D776007
    Type: Grant
    Filed: August 26, 2015
    Date of Patent: January 10, 2017
    Assignee: Hyundai Motor Company
    Inventors: Hee-Joon An, Myung-Jin Jung, Hae-Ryun Sohn