Patents by Inventor Nadia Ben Mohammed

Nadia Ben Mohammed has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for determining a suitable implanting energy in a donor substrate and process for fabricating a structure of semiconductor-on-insulator type
    Patent number: 10777447
    Abstract: A method for determining a suitable implanting energy of at least two atomic species in a donor substrate to create a weakened zone defining a monocrystalline semiconductor layer to be transferred onto a receiver substrate, comprises the following steps: (i) forming a dielectric layer on at least one of the donor substrate and the receiver substrate; (ii) co-implanting the species in the donor substrate; (iii) bonding the donor substrate on the receiver substrate; (iv) detaching the donor substrate along the weakened zone to transfer the monocrystalline semiconductor layer and recover the remainder of the donor substrate; (v) inspecting the peripheral crown of the remainder of the donor substrate, or of the receiver substrate on which the monocrystalline semiconductor layer was transferred at step (iv); (vi) if the crown exhibits zones transferred onto the receiver substrate, determining the fact that the implanting energy at step (ii) is too high; (vii) if said the crown does not exhibit zones transferred on
    Type: Grant
    Filed: March 2, 2017
    Date of Patent: September 15, 2020
    Assignee: Soitec
    Inventors: Ludovic Ecarnot, Nadia Ben Mohammed, Carine Duret
  • METHOD FOR DETERMINING A SUITABLE IMPLANTING ENERGY IN A DONOR SUBSTRATE AND PROCESS FOR FABRICATING A STRUCTURE OF SEMICONDUCTOR-ON-INSULATOR TYPE
    Publication number: 20190074215
    Abstract: A method for determining a suitable implanting energy of at least two atomic species in a donor substrate to create a weakened zone defining a monocrystalline semiconductor layer to be transferred onto a receiver substrate, comprises the following steps: (i) forming a dielectric layer on at least one of the donor substrate and the receiver substrate; (ii) co-implanting the species in the donor substrate; (iii) bonding the donor substrate on the receiver substrate; (iv) detaching the donor substrate along the weakened zone to transfer the monocrystalline semiconductor layer and recover the remainder of the donor substrate; (v) inspecting the peripheral crown of the remainder of the donor substrate, or of the receiver substrate on which the monocrystalline semiconductor layer was transferred at step (iv); (vi) if the crown exhibits zones transferred onto the receiver substrate, determining the fact that the implanting energy at step (ii) is too high; (vii) if said the crown does not exhibit zones transferred
    Type: Application
    Filed: March 2, 2017
    Publication date: March 7, 2019
    Inventors: Ludovic Ecarnot, Nadia Ben Mohammed, Carine Duret