Patents by Inventor Nagarajan Rajagopalan
Nagarajan Rajagopalan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11898249Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.Type: GrantFiled: February 13, 2023Date of Patent: February 13, 2024Assignee: Applied Materials, Inc.Inventors: Nagarajan Rajagopalan, Xinhai Han, Michael Wenyoung Tsiang, Masaki Ogata, Zhijun Jiang, Juan Carlos Rocha-Alvarez, Thomas Nowak, Jianhua Zhou, Ramprakash Sankarakrishnan, Amit Kumar Bansal, Jeongmin Lee, Todd Egan, Edward W. Budiarto, Dmitriy Panasyuk, Terrance Y. Lee, Jian J. Chen, Mohamad A. Ayoub, Heung Lak Park, Patrick Reilly, Shahid Shaikh, Bok Hoen Kim, Sergey Starik, Ganesh Balasubramanian
-
Patent number: 11894228Abstract: Exemplary methods of semiconductor processing may include forming a plasma of a carbon-containing precursor in a processing region of a semiconductor processing chamber. The methods may include depositing a carbon-containing material on a substrate housed in the processing region of the semiconductor processing chamber. The methods may include halting a flow of the carbon-containing precursor into the processing region of the semiconductor processing chamber. The methods may include contacting the carbon-containing material with plasma effluents of an oxidizing material. The methods may include forming volatile materials from a surface of the carbon-containing material.Type: GrantFiled: August 26, 2021Date of Patent: February 6, 2024Assignee: Applied Materials, Inc.Inventors: Sudha S. Rathi, Ganesh Balasubramanian, Nagarajan Rajagopalan, Abdul Aziz Khaja, Prashanthi Para, Hiral D. Tailor
-
Publication number: 20230193466Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.Type: ApplicationFiled: February 13, 2023Publication date: June 22, 2023Inventors: Nagarajan RAJAGOPALAN, Xinhai HAN, Michael Wenyoung TSIANG, Masaki OGATA, Zhijun JIANG, Juan Carlos ROCHA-ALVAREZ, Thomas NOWAK, Jianhua ZHOU, Ramprakash SANKARAKRISHNAN, Amit Kumar BANSAL, Jeongmin LEE, Todd EGAN, Edward W. BUDIARTO, Dmitriy PANASYUK, Terrance Y. LEE, Jian J. CHEN, Mohamad A. AYOUB, Heung Lak PARK, Patrick REILLY, Shahid SHAIKH, Bok Hoen KIM, Sergey STARIK, Ganesh BALASUBRAMANIAN
-
Patent number: 11613812Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.Type: GrantFiled: September 3, 2020Date of Patent: March 28, 2023Assignee: Applied Materials, Inc.Inventors: Nagarajan Rajagopalan, Xinhai Han, Michael Wenyoung Tsiang, Masaki Ogata, Zhijun Jiang, Juan Carlos Rocha-Alvarez, Thomas Nowak, Jianhua Zhou, Ramprakash Sankarakrishnan, Amit Kumar Bansal, Jeongmin Lee, Todd Egan, Edward Budiarto, Dmitriy Panasyuk, Terrance Y. Lee, Jian J. Chen, Mohamad A. Ayoub, Heung Lak Park, Patrick Reilly, Shahid Shaikh, Bok Hoen Kim, Sergey Starik, Ganesh Balasubramanian
-
Publication number: 20230061249Abstract: Exemplary methods of semiconductor processing may include forming a plasma of a carbon-containing precursor in a processing region of a semiconductor processing chamber. The methods may include depositing a carbon-containing material on a substrate housed in the processing region of the semiconductor processing chamber. The methods may include halting a flow of the carbon-containing precursor into the processing region of the semiconductor processing chamber. The methods may include contacting the carbon-containing material with plasma effluents of an oxidizing material. The methods may include forming volatile materials from a surface of the carbon-containing material.Type: ApplicationFiled: August 26, 2021Publication date: March 2, 2023Applicant: Applied Materials, Inc.Inventors: Sudha S. Rathi, Ganesh Balasubramanian, Nagarajan Rajagopalan, Abdul Aziz Khaja, Prashanthi Para, Hiral D. Tailor
-
Publication number: 20210040607Abstract: Exemplary methods of forming semiconductor structures may include forming a silicon oxide layer from a silicon-containing precursor and an oxygen-containing precursor. The methods may include forming a silicon nitride layer from a silicon-containing precursor, a nitrogen-containing precursor, and an oxygen-containing precursor. The silicon nitride layer may be characterized by an oxygen concentration greater than or about 5 at. %. The methods may also include repeating the forming a silicon oxide layer and the forming a silicon nitride layer to produce a stack of alternating layers of silicon oxide and silicon nitride.Type: ApplicationFiled: August 6, 2020Publication date: February 11, 2021Applicant: Applied Materials, Inc.Inventors: Xinhai Han, Hang Yu, Kesong Hu, Kristopher Enslow, Masaki Ogata, Wenjiao Wang, Chuan Ying Wang, Chuanxi Yang, Joshua Maher, Phaik Lynn Leong, Qi En Teong, Alok Jain, Nagarajan Rajagopalan, Deenesh Padhi
-
Publication number: 20200399756Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.Type: ApplicationFiled: September 3, 2020Publication date: December 24, 2020Inventors: Nagarajan RAJAGOPALAN, Xinhai HAN, Michael Wenyoung TSIANG, Masaki OGATA, Zhijun JIANG, Juan Carlos ROCHA-ALVAREZ, Thomas NOWAK, Jianhua ZHOU, Ramprakash SANKARAKRISHNAN, Amit Kumar BANSAL, Jeongmin LEE, Todd EGAN, Edward BUDIARTO, Dmitriy PANASYUK, Terrance Y. LEE, Jian J. CHEN, Mohamad A. AYOUB, Heung Lak PARK, Patrick REILLY, Shahid SHAIKH, Bok Hoen KIM, Sergey STARIK, Ganesh BALASUBRAMANIAN
-
Patent number: 10793954Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.Type: GrantFiled: May 10, 2018Date of Patent: October 6, 2020Assignee: Applied Materials, Inc.Inventors: Nagarajan Rajagopalan, Xinhai Han, Michael Wenyoung Tsiang, Masaki Ogata, Zhijun Jiang, Juan Carlos Rocha-Alvarez, Thomas Nowak, Jianhua Zhou, Ramprakash Sankarakrishnan, Amit Kumar Bansal, Jeongmin Lee, Todd Egan, Edward Budiarto, Dmitriy Panasyuk, Terrance Y. Lee, Jian J. Chen, Mohamad A. Ayoub, Heung Lak Park, Patrick Reilly, Shahid Shaikh, Bok Hoen Kim, Sergey Starik, Ganesh Balasubramanian
-
Patent number: 10475644Abstract: A method is provided for forming a stack of film layers for use in 3D memory devices. The method starts with providing a substrate in a processing chamber of a deposition reactor. Then one or more process gases suitable for forming a dielectric layer are supplied into the processing chamber of the deposition reactor forming a dielectric layer on the substrate. Then one or more process gases suitable for forming a metallic layer are supplied into the processing chamber of the deposition reactor forming a metallic layer on the dielectric layer. Then one or more process gases suitable for forming a metallic nitride adhesion layer are supplied into the processing chamber of the deposition reactor forming a metallic nitride adhesion layer on the metallic layer. The sequence is then repeated to form a desired number of layers.Type: GrantFiled: April 23, 2018Date of Patent: November 12, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Xinhai Han, Nagarajan Rajagopalan, Sung Hyun Hong, Bok Hoen Kim, Mukund Srinivasan
-
Publication number: 20180258535Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.Type: ApplicationFiled: May 10, 2018Publication date: September 13, 2018Inventors: Nagarajan RAJAGOPALAN, Xinhai HAN, Michael Wenyoung TSIANG, Masaki OGATA, Zhijun JIANG, Juan Carlos ROCHA-ALVAREZ, Thomas NOWAK, Jianhua ZHOU, Ramprakash SANKARAKRISHNAN, Amit Kumar BANSAL, Jeongmin LEE, Todd EGAN, Edward BUDIARTO, Dmitriy PANASYUK, Terrance Y. LEE, Jian J. CHEN, Mohamad A. AYOUB, Heung Lak PARK, Patrick REILLY, Shahid SHAIKH, Bok Hoen KIM, Sergey STARIK, Ganesh BALASUBRAMANIAN
-
Publication number: 20180247808Abstract: A method is provided for forming a stack of film layers for use in 3D memory devices. The method starts with providing a substrate in a processing chamber of a deposition reactor. Then one or more process gases suitable for forming a dielectric layer are supplied into the processing chamber of the deposition reactor forming a dielectric layer on the substrate. Then one or more process gases suitable for forming a metallic layer are supplied into the processing chamber of the deposition reactor forming a metallic layer on the dielectric layer. Then one or more process gases suitable for forming a metallic nitride adhesion layer are supplied into the processing chamber of the deposition reactor forming a metallic nitride adhesion layer on the metallic layer. The sequence is then repeated to form a desired number of layers.Type: ApplicationFiled: April 23, 2018Publication date: August 30, 2018Inventors: Xinhai HAN, Nagarajan RAJAGOPALAN, Sung Hyun HONG, Bok Hoen KIM, Mukund SRINIVASAN
-
Patent number: 10060032Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.Type: GrantFiled: November 3, 2017Date of Patent: August 28, 2018Assignee: APPLIED MATERIALS, INC.Inventors: Nagarajan Rajagopalan, Xinhai Han, Michael Wenyoung Tsiang, Masaki Ogata, Zhijun Jiang, Juan Carlos Rocha-Alvarez, Thomas Nowak, Jianhua Zhou, Ramprakash Sankarakrishnan, Amit Kumar Bansal, Jeongmin Lee, Todd Egan, Edward Budiarto, Dmitriy Panasyuk, Terrance Y. Lee, Jian J. Chen, Mohamad A. Ayoub, Heung Lak Park, Patrick Reilly, Shahid Shaikh, Bok Hoen Kim, Sergey Starik, Ganesh Balasubramanian
-
Patent number: 10030306Abstract: Apparatus and method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.Type: GrantFiled: October 23, 2013Date of Patent: July 24, 2018Assignee: Applied Materials, Inc.Inventors: Nagarajan Rajagopalan, Xinhai Han, Michael Tsiang, Masaki Ogata, Zhijun Jiang, Juan Carlos Rocha-Alvarez, Thomas Nowak, Jianhua Zhou, Ramprakash Sankarakrishnan, Ganesh Balasubramanian, Amit Kumar Bansal, Jeongmin Lee, Todd Egan, Edward Budiarto, Dmitriy Panasyuk, Terrance Y. Lee, Jian J. Chen, Mohamad A. Ayoub, Heung Lak Park, Patrick Reilly, Shahid Shaikh, Bok Hoen Kim, Sergey Starik
-
Patent number: 9972487Abstract: A method is provided for forming a stack of film layers for use in 3D memory devices. The method starts with providing a substrate in a processing chamber of a deposition reactor. Then one or more process gases suitable for forming a dielectric layer are supplied into the processing chamber of the deposition reactor forming a dielectric layer on the substrate. Then one or more process gases suitable for forming a metallic layer are supplied into the processing chamber of the deposition reactor forming a metallic layer on the dielectric layer. Then one or more process gases suitable for forming a metallic nitride adhesion layer are supplied into the processing chamber of the deposition reactor forming a metallic nitride adhesion layer on the metallic layer. The sequence is then repeated to form a desired number of layers.Type: GrantFiled: January 7, 2015Date of Patent: May 15, 2018Assignee: APPLIED MATERIALS, INC.Inventors: Xinhai Han, Nagarajan Rajagopalan, Sung Hyun Hong, Bok Hoen Kim, Mukund Srinivasan
-
Publication number: 20180066364Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.Type: ApplicationFiled: November 3, 2017Publication date: March 8, 2018Inventors: Nagarajan RAJAGOPALAN, Xinhai HAN, Michael Wenyoung TSIANG, Masaki OGATA, Zhijun JIANG, Juan Carlos ROCHA-ALVAREZ, Thomas NOWAK, Jianhua ZHOU, Ramprakash SANKARAKRISHNAN, Amit Kumar BANSAL, Jeongmin LEE, Todd EGAN, Edward BUDIARTO, Dmitriy PANASYUK, Terrance Y. LEE, Jian J. CHEN, Mohamad A. AYOUB, Heung Lak PARK, Patrick REILLY, Shahid SHAIKH, Bok Hoen KIM, Sergey STARIK, Ganesh BALASUBRAMANIAN
-
Patent number: 9896326Abstract: A method of reducing line bending and surface roughness of a substrate with pillars includes forming a treated surface by treating a pillar-containing substrate with a radical. The radical may be silicon-based, nitrogen-based or oxygen-based. The method may include forming a dielectric film over the treated surface by reacting an organosilicon precursor and an oxygen precursor. The method may include curing the dielectric film at a temperature of about 150° C. or less. A method of reducing line bending and surface roughness of a substrate with pillars includes forming a dielectric film over a pillar-containing substrate by reacting an organosilicon precursor, an oxygen precursor, and a radical precursor. The method may include curing the dielectric film at a temperature of about 150° C. or less. The radical precursor may be selected from the group consisting of nitrogen-based radical precursor, oxygen-based radical precursor, and silicon-based radical precursor.Type: GrantFiled: November 30, 2015Date of Patent: February 20, 2018Assignee: Applied Materials, Inc.Inventors: Jingmei Liang, Kiran V. Thadani, Jessica S. Kachian, Nagarajan Rajagopalan
-
Patent number: 9816187Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.Type: GrantFiled: September 28, 2016Date of Patent: November 14, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Nagarajan Rajagopalan, Xinhai Han, Michael Wenyoung Tsiang, Masaki Ogata, Zhijun Jiang, Juan Carlos Rocha-Alvarez, Thomas Nowak, Jianhua Zhou, Ramprakash Sankarakrishnan, Amit Kumar Bansal, Jeongmin Lee, Todd Egan, Edward Budiarto, Dmitriy Panasyuk, Terrance Y. Lee, Jian J. Chen, Mohamad A. Ayoub, Heung Lak Park, Patrick Reilly, Shahid Shaikh, Bok Hoen Kim, Sergey Starik, Ganesh Balasubramanian
-
Publication number: 20170016118Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.Type: ApplicationFiled: September 28, 2016Publication date: January 19, 2017Inventors: Nagarajan RAJAGOPALAN, Xinhai HAN, Michael Wenyoung TSIANG, Masaki OGATA, Zhijun JIANG, Juan Carlos ROCHA-ALVAREZ, Thomas NOWAK, Jianhua ZHOU, Ramprakash SANKARAKRISHNAN, Amit Kumar BANSAL, Jeongmin LEE, Todd EGAN, Edward BUDIARTO, Dmitriy PANASYUK, Terrance Y. LEE, Jian J. CHEN, Mohamad A. AYOUB, Heung Lak PARK, Patrick REILLY, Shahid SHAIKH, Bok Hoen KIM, Sergey STARIK, Ganesh BALASUBRAMANIAN
-
Patent number: 9490116Abstract: Embodiments of the disclosure provide methods and system for manufacturing film layers with minimum lithographic overlay errors on a semiconductor substrate. In one embodiment, a method for forming a film layer on a substrate includes supplying a deposition gas mixture including a silicon containing gas and a reacting gas onto a substrate disposed on a substrate support in a processing chamber, forming a plasma in the presence of the depositing gas mixture in the processing chamber, applying current to a plasma profile modulator disposed in the processing chamber while supplying the depositing gas mixture into the processing chamber, and rotating the substrate while depositing a film layer on the substrate.Type: GrantFiled: October 8, 2015Date of Patent: November 8, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Michael Tsiang, Praket P. Jha, Xinhai Han, Nagarajan Rajagopalan, Bok Hoen Kim, Tsutomu Kiyohara, Subbalakshmi Sreekala
-
Patent number: 9458537Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.Type: GrantFiled: September 29, 2015Date of Patent: October 4, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Nagarajan Rajagopalan, Xinhai Han, Michael Wenyoung Tsiang, Masaki Ogata, Zhijun Jiang, Juan Carlos Rocha-Alvarez, Thomas Nowak, Jianhua Zhou, Ramprakash Sankarakrishnan, Amit Kumar Bansal, Jeongmin Lee, Todd Egan, Edward Budiarto, Dmitriy Panasyuk, Terrance Y. Lee, Jian J. Chen, Mohamad A. Ayoub, Heung Lak Park, Patrick Reilly, Shahid Shaikh, Bok Hoen Kim, Sergey Starik, Ganesh Balasubramanian