Patents by Inventor Nai-Fang HSU

Nai-Fang HSU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200373370
    Abstract: A display device includes: a substrate; a light emitting diode disposed above the substrate; a first transistor disposed above the substrate; and a second transistor disposed above the substrate. The first transistor includes: a first semiconductor including a silicon semiconductor; a gate electrode disposed above the first semiconductor; and a first drain electrode electrically connected to the first semiconductor, wherein the first drain electrode is electrically connected to the light emitting diode. The second transistor includes: a second semiconductor including an oxide semiconductor; and a second drain electrode electrically connected to the second semiconductor, wherein the second drain electrode is electrically connected to the gate electrode of the first transistor.
    Type: Application
    Filed: August 14, 2020
    Publication date: November 26, 2020
    Inventors: Chandra LIUS, Kuanfeng LEE, Nai-Fang HSU
  • Publication number: 20200319489
    Abstract: A display device includes: a substrate including a display region and a peripheral region, wherein the peripheral region is adjacent to the display region; a first transistor disposed on the peripheral region, wherein the first transistor includes a first semiconductor layer and a drain electrode electrically connected to the first semiconductor layer, and the first semiconductor layer is a silicon semiconductor layer; and a second transistor disposed on the display region, wherein the second transistor includes a second semiconductor layer and a gate electrode corresponding to the second semiconductor layer, and the second semiconductor layer is an oxide semiconductor layer, wherein the drain electrode of the first transistor is electrically connected to the gate electrode of the second transistor.
    Type: Application
    Filed: June 24, 2020
    Publication date: October 8, 2020
    Inventors: Chandra LIUS, Kuan-Feng LEE, Nai-Fang HSU
  • Patent number: 10784327
    Abstract: A display device is disclosed, which includes: a substrate; a light emitting diode disposed above the substrate; a first transistor disposed above the substrate; and a second transistor disposed above the substrate. The first transistor includes: a first semiconductor layer; a first top gate electrode disposed above the first semiconductor layer; a first bottom gate electrode disposed under the first semiconductor layer; a first source electrode electrically connected to the first semiconductor layer; and a first drain electrode electrically connected to the first semiconductor layer, wherein the first drain electrode is electrically connected to the light emitting diode. In addition, the second transistor includes: a second semiconductor layer. Herein, one of the first semiconductor layer and the second semiconductor layer includes a first silicon semiconductor layer, and the other includes a first oxide semiconductor layer.
    Type: Grant
    Filed: September 20, 2018
    Date of Patent: September 22, 2020
    Assignee: INNOLUX CORPORATION
    Inventors: Chandra Lius, Kuan-Feng Lee, Nai-Fang Hsu
  • Patent number: 10732475
    Abstract: A display device is disclosed, which includes: a first substrate including a display region and a peripheral region, wherein the peripheral region is adjacent to the display region; a first transistor disposed on the peripheral region, wherein the first transistor includes a first semiconductor layer, and the first semiconductor layer is a silicon semiconductor layer; a second transistor disposed on the display region, wherein the second transistor includes a second semiconductor layer, and the second semiconductor layer is an oxide semiconductor layer; a first insulating layer disposed under the first semiconductor layer; and a buffer layer disposed between the first substrate and the first insulating layer, wherein a thickness of the first insulating layer is greater than a thickness of the buffer layer.
    Type: Grant
    Filed: December 13, 2018
    Date of Patent: August 4, 2020
    Assignee: INNOLUX CORPORATION
    Inventors: Chandra Lius, Kuan-Feng Lee, Nai-Fang Hsu
  • Patent number: 10615262
    Abstract: A display panel comprises a first substrate, a second substrate, a display layer and transistors. One of the transistors includes a gate electrode disposed on the base plate, a first insulating layer disposed on the gate electrode, an active layer disposed on the first insulating layer, and a source electrode and a drain electrode disposed on the active layer, wherein the active layer includes a channel region between the source electrode and the drain electrode. At least one of the source and drain electrodes includes a first conductive layer disposed on the active layer, and a second conductive layer disposed on and contacting the first conductive layer, wherein the second conductive layer exposes a portion of top surface of the first conductive layer so that the first conductive layer possesses a first protrusion portion protruding from the edge of the second conductive layer and extending towards the channel region.
    Type: Grant
    Filed: February 27, 2017
    Date of Patent: April 7, 2020
    Assignee: INNOLUX CORPORATION
    Inventors: Chun-Liang Lin, Bo-Chin Tsuei, Hung-Kun Chen, Nai-Fang Hsu, Yi-Ching Chen
  • Publication number: 20200013807
    Abstract: A display device, and method for manufacture, having a substrate; a first thin film transistor (TFT) on the substrate, the first TFT having a first active layer, a first gate insulator, and a first gate electrode; a second TFT on the substrate, the second TFT having a second active layer, a second gate insulator and a second gate electrode. The first gate insulator is disposed between the first gate electrode and the first active layer, and the first gate insulator is in contact with the first active layer. The second gate insulator is disposed between the second gate electrode and the second active layer, and the second gate insulator is in contact with the second active layer. The first active layer is a different material than said second active layer, and a hydrogen concentration of the second gate insulator is less than a hydrogen concentration of the first gate insulator.
    Type: Application
    Filed: September 16, 2019
    Publication date: January 9, 2020
    Inventors: Kuan-feng LEE, Chandra LIUS, Nai-Fang HSU
  • Patent number: 10468434
    Abstract: A display device, and method for manufacture, having a substrate; a first thin film transistor (TFT) on the substrate, the first TFT having a first active layer, a first gate insulator, and a first gate electrode; a second TFT on the substrate, the second TFT having a second active layer, a second gate insulator and a second gate electrode. The first gate insulator is disposed between the first gate electrode and the first active layer, and the first gate insulator is in contact with the first active layer. The second gate insulator is disposed between the second gate electrode and the second active layer, and the second gate insulator is in contact with the second active layer. A material of the first active layer is different than a material of the second active layer, and a hydrogen concentration of the second gate insulator is different from a hydrogen concentration of the first gate insulator.
    Type: Grant
    Filed: February 17, 2017
    Date of Patent: November 5, 2019
    Assignee: INNOLUX CORPORATION
    Inventors: Kuan-feng Lee, Chandra Lius, Nai-Fang Hsu
  • Patent number: 10451901
    Abstract: A display device is provided, including a first substrate, a plurality of first contact pads, a second substrate, a plurality of second contact pads, and a plurality of first traces. The first substrate includes a display area and a non-display area. The first contact pads disposed on the non-display area. The second substrate includes a first side and a second side, wherein the first side is opposite to the second side. The second contact pads are disposed on the first side, wherein the second contact pads are electrically connected to the first contact pads. The first traces are disposed on the second side, wherein the first traces are electrically connected to the second contact pads through a plurality of through holes respectively, and one of the through holes overlaps corresponding one of the second contact pads in a normal direction of the second substrate.
    Type: Grant
    Filed: August 30, 2017
    Date of Patent: October 22, 2019
    Assignee: INNOLUX CORPORATION
    Inventors: Yang-Chen Chen, Nai-Fang Hsu, Yu-Hsien Wu
  • Publication number: 20190258349
    Abstract: A display device is disclosed, which includes: a first substrate; a first transistor disposed on the first substrate and including a first gate electrode, a first drain electrode, a first source electrode, and a first oxide semiconductor layer, wherein the first oxide semiconductor layer is oppositely disposed on the first gate electrode, and the first drain electrode and the first source electrode are electrically connected to the first oxide semiconductor layer, and a second transistor disposed on the first substrate and including a second gate electrode, a second drain electrode, a second source electrode, and a silicon semiconductor layer, wherein the second gate electrode is oppositely disposed on the silicon semiconductor layer, the second drain electrode and the second source electrode are electrically connected to the silicon semiconductor layer, and the first gate electrode is electrically connected to one of the second drain electrode and the second source electrode.
    Type: Application
    Filed: May 3, 2019
    Publication date: August 22, 2019
    Inventors: CHANDRA LIUS, Nai-Fang HSU
  • Patent number: 10325930
    Abstract: A display device is disclosed, which includes: a first substrate; a first transistor disposed over the first substrate, wherein the first transistor includes an oxide semiconductor layer; and a second transistor disposed over the first substrate, wherein the second transistor includes a silicon semiconductor layer, wherein the oxide semiconductor layer includes indium, gallium, and oxygen; and a ratio of an atomic percentage of oxygen to a sum of atomic percentages of indium and gallium in the oxide semiconductor layer is greater than or equal to 1 and less than or equal to 3.
    Type: Grant
    Filed: April 13, 2017
    Date of Patent: June 18, 2019
    Assignee: INNOLUX CORPORATION
    Inventors: Chandra Lius, Nai-Fang Hsu
  • Publication number: 20190121182
    Abstract: A display device is disclosed, which includes: a first substrate including a display region and a peripheral region, wherein the peripheral region is adjacent to the display region; a first transistor disposed on the peripheral region, wherein the first transistor includes a first semiconductor layer, and the first semiconductor layer is a silicon semiconductor layer; a second transistor disposed on the display region, wherein the second transistor includes a second semiconductor layer, and the second semiconductor layer is an oxide semiconductor layer; a first insulating layer disposed under the first semiconductor layer, and a buffer layer disposed between the first substrate and the first insulating layer, wherein a thickness of the first insulating layer is greater than a thickness of the buffer layer.
    Type: Application
    Filed: December 13, 2018
    Publication date: April 25, 2019
    Applicant: InnoLux Corporation
    Inventors: Chandra LIUS, Kuan-Feng LEE, Nai-Fang HSU
  • Patent number: 10191345
    Abstract: A display device is disclosed, which includes: a first substrate; a first transistor disposed on the first substrate, wherein the first transistor comprises a first semiconductor layer; a second transistor disposed on the first substrate, wherein the second transistor includes a second semiconductor layer; and a first insulating layer disposed under the first semiconductor layer; wherein a thickness of the first insulating layer is greater than or equal to 200 nm and less than or equal to 500 nm; and wherein one of the first semiconductor layer and the second semiconductor layer comprises a silicon semiconductor layer, and the other comprises an oxide semiconductor layer.
    Type: Grant
    Filed: April 11, 2017
    Date of Patent: January 29, 2019
    Assignee: INNOLUX CORPORATION
    Inventors: Chandra Lius, Kuan-Feng Lee, Nai-Fang Hsu
  • Publication number: 20190019853
    Abstract: A display device is disclosed, which includes: a substrate; a light emitting diode disposed above the substrate; a first transistor disposed above the substrate; and a second transistor disposed above the substrate. The first transistor includes: a first semiconductor layer; a first top gate electrode disposed above the first semiconductor layer; a first bottom gate electrode disposed under the first semiconductor layer; a first source electrode electrically connected to the first semiconductor layer; and a first drain electrode electrically connected to the first semiconductor layer, wherein the first drain electrode is electrically connected to the light emitting diode. In addition, the second transistor includes: a second semiconductor layer. Herein, one of the first semiconductor layer and the second semiconductor layer includes a first silicon semiconductor layer, and the other includes a first oxide semiconductor layer.
    Type: Application
    Filed: September 20, 2018
    Publication date: January 17, 2019
    Inventors: Chandra LIUS, Kuan-Feng LEE, Nai-Fang HSU
  • Patent number: 10141387
    Abstract: A display device is disclosed, which includes: a substrate; a light emitting diode disposed above the substrate; a first transistor disposed above the substrate; and a second transistor disposed above the substrate. The first transistor includes: a first semiconductor layer; a first top gate electrode disposed above the first semiconductor layer; a first bottom gate electrode disposed under the first semiconductor layer; a first source electrode electrically connected to the first semiconductor layer; and a first drain electrode electrically connected to the first semiconductor layer, wherein the first drain electrode is electrically connected to the light emitting diode. In addition, the second transistor includes: a second semiconductor layer. Herein, one of the first semiconductor layer and the second semiconductor layer includes a first silicon semiconductor layer, and the other includes a first oxide semiconductor layer.
    Type: Grant
    Filed: February 24, 2017
    Date of Patent: November 27, 2018
    Assignee: INNOLUX CORPORATION
    Inventors: Chandra Lius, Kuanfeng Lee, Nai-Fang Hsu
  • Patent number: 9997427
    Abstract: A display panel includes a first inorganic capping layer (INOCL) in a non-displaying area (AND) of a substrate, a first electrode in the AND formed on the first INOCL, an organic capping layer (OCL) on the substrate overlapping at least a portion of the first electrode, and a first dam structure in the AND positioned between a first lateral surface of the substrate and the OCL in top view. A first distance H is between the top surfaces of the first INOCL and the OCL in a normal direction of the substrate. The first dam structure has a first maximum dam height Hdam and a dam width Wdam. A second distance Lsr is a minimum distance from a third lateral surface of the first dam structure to a second lateral surface of the first electrode, wherein H, Lsr, Hdam and Wdam conform to the equation: H×(0.1870?Wdam/(2.46×Lsr))?Hdam?H×(0.9548?Wdam/(44.26×Lsr)).
    Type: Grant
    Filed: August 18, 2017
    Date of Patent: June 12, 2018
    Inventors: Yang-Chen Chen, Nai-Fang Hsu, Yu-Hsien Wu
  • Publication number: 20180158843
    Abstract: A display device is disclosed, which includes: a first substrate; a first transistor disposed over the first substrate, wherein the first transistor includes an oxide semiconductor layer; and a second transistor disposed over the first substrate, wherein the second transistor includes a silicon semiconductor layer, wherein the oxide semiconductor layer includes indium, gallium, and oxygen; and a ratio of an atomic percentage of oxygen to a sum of atomic percentages of indium and gallium in the oxide semiconductor layer is greater than or equal to 1 and less than or equal to 3.
    Type: Application
    Filed: April 13, 2017
    Publication date: June 7, 2018
    Inventors: Chandra LIUS, Nai-Fang HSU
  • Publication number: 20180120612
    Abstract: A display device is disclosed, which includes: a first substrate; a first transistor disposed on the first substrate, wherein the first transistor comprises a first semiconductor layer; a second transistor disposed on the first substrate, wherein the second transistor includes a second semiconductor layer; and a first insulating layer disposed under the first semiconductor layer; wherein a thickness of the first insulating layer is greater than or equal to 200 nm and less than or equal to 500 nm; and wherein one of the first semiconductor layer and the second semiconductor layer comprises a silicon semiconductor layer, and the other comprises an oxide semiconductor layer.
    Type: Application
    Filed: April 11, 2017
    Publication date: May 3, 2018
    Inventors: Chandra LIUS, Kuan-Feng LEE, Nai-Fang HSU
  • Publication number: 20180088356
    Abstract: A display device is provided, including a first substrate, a plurality of first contact pads, a second substrate, a plurality of second contact pads, and a plurality of first traces. The first substrate includes a display area and a non-display area. The first contact pads disposed on the non-display area. The second substrate includes a first side and a second side, wherein the first side is opposite to the second side. The second contact pads are disposed on the first side, wherein the second contact pads are electrically connected to the first contact pads. The first traces are disposed on the second side, wherein the first traces are electrically connected to the second contact pads through a plurality of through holes respectively, and one of the through holes overlaps corresponding one of the second contact pads in a normal direction of the second substrate.
    Type: Application
    Filed: August 30, 2017
    Publication date: March 29, 2018
    Inventors: Yang-Chen CHEN, Nai-Fang HSU, Yu-Hsien WU
  • Publication number: 20180061728
    Abstract: A display panel includes a first inorganic capping layer (INOCL) in a non-displaying area (AND) of a substrate, a first electrode in the AND formed on the first INOCL, an organic capping layer (OCL) on the substrate overlapping at least a portion of the first electrode, and a first dam structure in the AND positioned between a first lateral surface of the substrate and the OCL in top view. A first distance H is between the top surfaces of the first INOCL and the OCL in a normal direction of the substrate. The first dam structure has a first maximum dam height Hdam and a dam width Wdam. A second distance Lsr is a minimum distance from a third lateral surface of the first dam structure to a second lateral surface of the first electrode, wherein H, Lsr, Hdam and Wdam conform to the equation: H×(0.1870?Wdam/(2.46×Lsr))?Hdam?H×(0.9548?Wdam/(44.26×Lsr)).
    Type: Application
    Filed: August 18, 2017
    Publication date: March 1, 2018
    Inventors: Yang-Chen CHEN, Nai-Fang HSU, Yu-Hsien WU
  • Publication number: 20170338252
    Abstract: A display device is disclosed, which includes: a first substrate; a first thin film transistor disposed on the first substrate; a second thin film transistor disposed on the first substrate; a first capacitance electrode; and a second capacitance electrode. The first thin film transistor includes: a first semiconductor layer comprising silicon; and a first electrode electrically connected to the first semiconductor layer. The second thin film transistor includes: a second semiconductor layer comprising metal oxide; and a second electrode electrically connected to the second semiconductor layer. The first capacitance electrode is electrically connected to the first electrode, the second capacitance electrode is electrically connected to the second electrode, and the second capacitance electrode and the first capacitance electrode overlap.
    Type: Application
    Filed: April 6, 2017
    Publication date: November 23, 2017
    Inventors: Kuan-Feng LEE, Chandra LIUS, Nai-Fang HSU