Abstract: The embodiments described herein provide improved scanner assemblies that include a first plastic body, a second plastic body, a movable scanning platform and a drive device. The first plastic body includes a first plurality of coupling structures, while the second plastic body includes a second plurality of coupling structures. The moveable scanning platform is positioned between the first plastic body and the second plastic body, and each of the first plurality of coupling structures is welded to a corresponding one of the second plurality of coupling structures.

Abstract: The embodiments described herein provide improved scanner assemblies that include a first plastic body, a second plastic body, a movable scanning platform and a drive device. The first plastic body includes a first plurality of coupling structures, while the second plastic body includes a second plurality of coupling structures. The moveable scanning platform is positioned between the first plastic body and the second plastic body, and each of the first plurality of coupling structures is welded to a corresponding one of the second plurality of coupling structures.

Abstract: The embodiments described herein provide improved techniques for laser welding. These techniques can provide improved weld strength while reducing the potential for damage at the welding surface. In general, the techniques use a mask to selectively block a portion of the laser beam during welding. Specifically, the mask is made to include at least one laser light blocking feature and at least one laser light passing feature. The mask is positioned to be in contact with the plastic bodies that are to be welded together, with the laser light blocking feature and laser light passing feature proximate to the area that is to be welded. Then during welding the laser beam is operated to simultaneously impact the laser light blocking feature and pass through the laser light passing feature.

Abstract: Graphene is used as an interfacial layer to grow Si and other semiconductors or crystalline materials including two-dimensional Si and other structures on any foreign substrate that can withstand the growth temperature without the limitation matching condition typically required for epitaxial growth.

Abstract: Graphene is used as an interfacial layer to grow Si and other semiconductors or crystalline materials including two-dimensional Si and other structures on any foreign substrate that can withstand the growth temperature without the limitation matching condition typically required for epitaxial growth.

Abstract: Graphene is used as an interfacial layer to grow Si and other semiconductors or crystalline materials including two-dimensional Si and other structures on any foreign substrate that can withstand the growth temperature without the limitation matching condition typically required for epitaxial growth.

Abstract: Graphene is used as an interfacial layer to grow Si and other semiconductors or crystalline materials including two-dimensional Si and other structures on any foreign substrate that can withstand the growth temperature without the limitation matching condition typically required for epitaxial growth.