Patents by Inventor Nakita NOEL

Nakita NOEL has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Material production process with alkylamine
    Patent number: 10797255
    Abstract: The present invention relates to a process for producing a layer of crystalline A/M/X material, wherein the process comprises disposing on a substrate a precursor composition comprising: (a) a first precursor compound comprising a first cation (M), which first cation is a metal or metalloid cation; and (b) a solvent, wherein the solvent comprises; (i) acetonitrile, propionitrile, acetone or a mixture thereof; and (ii) an alkylamine. The invention also relates to a composition comprising: (i) a compound of formula MXn, (ii) a compound of formula AX, (iii) acetonitrile, propionitrile, acetone or a mixture thereof; and (iv) an alkylamine of formula RANH2, wherein RA is a C1-8 alkyl group.
    Type: Grant
    Filed: March 8, 2017
    Date of Patent: October 6, 2020
    Assignee: OXFORD UNIVERSITY INNOVATION LIMITED
    Inventors: Henry James Snaith, Pabitra Nayak, Bernard Wenger, Nakita Noel, Severin Habisreutinger, David Moore
  • A/M/X MATERIAL PRODUCTION PROCESS WITH ALKYLAMINE
    Publication number: 20190115549
    Abstract: The present invention relates to a process for producing a layer of crystalline A/M/X material, wherein the process comprises disposing on a substrate a precursor composition comprising: (a) a first precursor compound comprising a first cation (M), which first cation is a metal or metalloid cation; and (b) a solvent, wherein the solvent comprises; (i) acetonitrile, propionitrile, acetone or a mixture thereof; and (ii) an alkylamine. The invention also relates to a composition comprising: (i) a compound of formula MXn, (ii) a compound of formula AX, (iii) acetonitrile, propionitrile, acetone or a mixture thereof; and (iv) an alkylamine of formula RANH2, wherein RA is a C1-8 alkyl group.
    Type: Application
    Filed: March 8, 2017
    Publication date: April 18, 2019
    Inventors: Henry David Snaith, Pabitra Nayak, Bernard Wenger, Nakita Noel, Severin Habisreutinger, David Moore
  • Semiconducting Layer Production Process
    Publication number: 20160013434
    Abstract: The invention provides a process for producing a layer of a semiconductor material, wherein the process comprises: a) disposing on a substrate: i) a plurality of particles of a semiconductor material, ii) a binder, wherein the binder is a molecular compound comprising at least one metal atom or metalloid atom, and iii) a solvent; and b) removing the solvent. The invention also provides a layer of semiconductor material obtainable by this process. In a preferred embodiment, the particles of a semiconductor material comprise mesoporous particles of the semiconductor material or mesoporous single crystals of the semiconductor material.
    Type: Application
    Filed: February 28, 2014
    Publication date: January 14, 2016
    Inventors: Henry James SNAITH, Edward James Williams CROSSLAND, Nakita NOEL, Varun SIVARAM, Tomas LEIJTENS