Abstract: An electronic system including a system-on-chip (SoC) providing access to a shared memory via a chip-to-chip link includes a memory device, a first semiconductor device, and a second semiconductor device. The first semiconductor device includes a first central processing unit (CPU) and a memory access path configured to enable access to the memory device. The second semiconductor device is configured to access the memory device via the memory access path of the first semiconductor device. The second semiconductor device is permitted to access the memory device while the memory access path is active and the first CPU is inactive, and the memory access path is configured to become active without intervention of the first CPU.

Abstract: A memory card system includes a host that issues a read command and a memory card that upon receiving the read command sends read data to the host in synchronism with a read clock signal generated within the memory card. In addition, the memory card sends the read clock signal to the host, and the host receives the read data in synchronism with the read clock signal, for increasing the allowable setup time period at the host.

Abstract: A memory card system includes a host that issues a read command and a memory card that upon receiving the read command sends read data to the host in synchronism with a read clock signal generated within the memory card. In addition, the memory card sends the read clock signal to the host, and the host receives the read data in synchronism with the read clock signal, for increasing the allowable setup time period at the host.

Abstract: A memory card system includes a host that issues a read command and a memory card that upon receiving the read command sends read data to the host in synchronism with a read clock signal generated within the memory card. In addition, the memory card sends the read clock signal to the host, and the host receives the read data in synchronism with the read clock signal, for increasing the allowable setup time period at the host.

Abstract: A memory system includes a plurality of memory devices, a controller configured to control the plurality of memory devices, and at least one channel connected between the plurality of memory devices and the controller. The at least one channel includes input/output data lines and control signal lines, which are connected with the plurality of memory devices, and chip enable signal lines respectively connected to each of the plurality of memory devices, wherein the chip enable signal lines enable the plurality of memory devices independently.

Abstract: An electronic system including a system-on-chip (SoC) providing access to a shared memory via a chip-to-chip link includes a memory device, a first semiconductor device, and a second semiconductor device. The first semiconductor device includes a first central processing unit (CPU) and a memory access path configured to enable access to the memory device. The second semiconductor device is configured to access the memory device via the memory access path of the first semiconductor device. The second semiconductor device is permitted to access the memory device while the memory access path is active and the first CPU is inactive, and the memory access path is configured to become active without intervention of the first CPU.

Abstract: A memory card system includes a host that issues a read command and a memory card that upon receiving the read command sends read data to the host in synchronism with a read clock signal generated within the memory card. In addition, the memory card sends the read clock signal to the host, and the host receives the read data in synchronism with the read clock signal, for increasing the allowable setup time period at the host.

Abstract: A memory system includes: a memory controller including an error correction decoder. The error correction decoder includes: a demultiplexer adapted to receive data and demultiplex the data into a first set of data and a second set of data; first and second buffer memories for storing the first and second sets of data, respectively; an error detector; an error corrector; and a multiplexer adapted to multiplex the first set of data and the second set of data and to provide the multiplexed data to the error corrector. While the error corrector corrects errors in the first set of data, the error detector detects errors in the second set of data stored in the second buffer memory.

Abstract: A memory card system includes a host that issues a read command and a memory card that upon receiving the read command sends read data to the host in synchronism with a read clock signal generated within the memory card. In addition, the memory card sends the read clock signal to the host, and the host receives the read data in synchronism with the read clock signal, for increasing the allowable setup time period at the host.

Abstract: An error correction decoder includes a syndrome computation circuit, an error correction and computation circuit and an error correction circuit. The syndrome computation circuit calculates a syndrome of read data. The error correction and computation circuit calculates a location of a single-bit error using a division operation between elements of the syndrome when the single-bit error exists in the read data. The error correction circuit corrects the single-bit error of the read data based on the location of the single-bit error.

Abstract: A code encoding apparatus includes a delay circuit and a code generator. The delay circuit generates delayed information based on p-bit input information received in parallel. The delayed information is generated according to a clock. The code generator generates n·p-bit code based on at least one of the input information and the delayed information, where n is a rational number.

Abstract: Various read level control apparatuses and methods are provided. In various embodiments, the read level control apparatuses may include an error control code (ECC) decoding unit for ECC decoding data read from a storage unit, and a monitoring unit for monitoring a bit error rate (BER) based on the ECC decoded data and the read data. The apparatus may additionally include an error determination unit for determining an error rate of the read data based on the monitored BER, and a level control unit for controlling a read level of the storage unit based on the error rate.

Abstract: An Error Control Code (ECC) apparatus applied to a memory of a Multi-Level Cell (MLC) method may include: a bypass control signal generator generating a bypass control signal; and an ECC performing unit that may include at least two ECC decoding blocks, determining whether to bypass a portion of the at least two ECC decoding blocks based on the bypass control signal, and/or performing an ECC decoding. In addition or in the alternative, the ECC performing unit may include at least two ECC encoding blocks, determining whether to bypass a portion of the at least two ECC encoding blocks based on the bypass control signal, and/or performing an ECC encoding. An ECC method applied to a memory of a MLC method and a computer-readable recording medium storing a program for implementing an EEC method applied to a memory of a MLC method are also disclose.

Abstract: An Error Control Code (ECC) apparatus may include a control signal generator that generates an ECC control signal based on channel information. The ECC apparatus also may include: a plurality of ECC encoding controllers that output data respectively inputted via storage elements corresponding to the ECC control signal; and/or an encoding unit that encodes, using a plurality of data outputted from the plurality of ECC encoding controllers, encoding input data into a number of subdata corresponding to the ECC control signal. In addition or in the alternative, the ECC apparatus may include: a plurality of ECC decoding controllers that output data respectively inputted via the storage elements corresponding to the ECC control signal; and/or a decoding unit that decodes, using a plurality of data outputted from the plurality of ECC decoding controllers, a number of decoding input data corresponding to the ECC control signal into one piece of output data.

Abstract: A multi-interface controller having a first logic circuit and a second logic circuit. The first logic circuit supports a first interface. The second logic circuit supports a second interface. The first logic circuit is enabled based on a first command. The second logic circuit is enabled based on a second command.

Abstract: Various read level control apparatuses and methods are provided. In various embodiments, the read level control apparatuses may include an error control code (ECC) decoding unit for ECC decoding data read from a storage unit, and a monitoring unit for monitoring a bit error rate (BER) based on the ECC decoded data and the read data. The apparatus may additionally include an error determination unit for determining an error rate of the read data based on the monitored BER, and a level control unit for controlling a read level of the storage unit based on the error rate.

Abstract: Various read level control apparatuses and methods are provided. In various embodiments, the read level control apparatuses may include an error control code (ECC) decoding unit for ECC decoding data read from a storage unit, and a monitoring unit for monitoring a bit error rate (BER) based on the ECC decoded data and the read data. The apparatus may additionally include an error determination unit for determining an error rate of the read data based on the monitored BER, and a level control unit for controlling a read level of the storage unit based on the error rate.

Abstract: A multi-bit programming device and method for a non-volatile memory are provided. In one example embodiment, a multi-bit programming device may include a multi-bit programming unit configured to multi-bit program original multi-bit data to a target memory cell in a memory cell array, and a backup programming unit configured to select backup memory cells in the memory cell array with respect to each bit of the original multi-bit data, and program each bit of the original multi-bit data to a respective one of the selected backup memory cells.

Abstract: A non-volatile memory device includes a latch unit, a non-volatile memory cell array configured to store data, and a control unit. The control unit is configured to receive a read command and a read address output from a memory controller, generate a data strobe signal based on the received read command, read data corresponding to the received read address from the non-volatile memory cell array, and output the read data to the latch unit. The latch unit is configured to output the data output from the control unit to the memory controller in response to the data strobe signal. Related methods of operation are also discussed.

Abstract: A method and an apparatus for programming data of memory cells considering coupling are provided. The method includes: calculating a change of a threshold voltage based on source data of the memory cells; converting source data which will be programmed based on the calculated change of the threshold voltage; and programming the converted source data.