Patents by Inventor Namiko Hagane

Namiko Hagane has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10812064
    Abstract: A device includes an epitaxial layer located over a semiconductor substrate, the epitaxial layer and the substrate both having a first conductivity type. A field-effect transistor (FET) includes source and drain regions having an opposite second conductivity type disposed in the epitaxial layer, and a gate structure over the substrate and between the source and drain regions. A diode includes first and second p-type regions and an n-type region all disposed in the epitaxial layer, the n-type region touching the first p-type region. A conductive plug electrically connects the first p-type region to the source region via the substrate.
    Type: Grant
    Filed: February 19, 2020
    Date of Patent: October 20, 2020
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Haian Lin, Frank Alexander Baiocchi, Masahiko Higashi, Namiko Hagane
  • Publication number: 20200295748
    Abstract: A device includes an epitaxial layer located over a semiconductor substrate, the epitaxial layer and the substrate both having a first conductivity type. A field-effect transistor (FET) includes source and drain regions having an opposite second conductivity type disposed in the epitaxial layer, and a gate structure over the substrate and between the source and drain regions. A diode includes first and second p-type regions and an n-type region all disposed in the epitaxial layer, the n-type region touching the first p-type region. A conductive plug electrically connects the first p-type region to the source region via the substrate.
    Type: Application
    Filed: February 19, 2020
    Publication date: September 17, 2020
    Inventors: Haian Lin, Frank Alexander Baiocchi, Masahiko Higashi, Namiko Hagane
  • Patent number: 10581426
    Abstract: An electronic device includes a first semiconductor die with a first FET having a drain connected to a switching node, a source connected to a reference node, and a gate connected to a first switch control node. The first die also includes a diode-connected bipolar transistor that forms a temperature diode next to the first FET. The temperature diode includes a cathode connected to the reference node, and an anode connected to a bias node. The electronic device also includes a second semiconductor die with a second FET, and a package structure that encloses the first and second semiconductor dies.
    Type: Grant
    Filed: March 11, 2019
    Date of Patent: March 3, 2020
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Haian Lin, Frank Alexander Baiocchi, Masahiko Higashi, Namiko Hagane