Patents by Inventor Nanako Kato

Nanako Kato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200366856
    Abstract: Imaging devices and electronic apparatuses with one or more shared pixel structures are provided. The shared pixel structure includes a plurality of photoelectric conversion devices or photodiodes. Each photodiode in the shared pixel structure is located within a rectangular area. The shared pixel structure also includes a plurality of shared transistors. The shared transistors in the shared pixel structure are located adjacent the photoelectric conversion devices of the shared pixel structure. The rectangular area can have two short sides and two long sides, with the shared transistors located along one of the long sides. In addition, a length of one or more of the transistors can be extended in a direction parallel to the long side of the rectangular area.
    Type: Application
    Filed: July 20, 2020
    Publication date: November 19, 2020
    Inventors: NANAKO KATO, TOSHIFUMI WAKANO, YUSUKE OTAKE
  • Patent number: 10741605
    Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency. In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.
    Type: Grant
    Filed: October 23, 2018
    Date of Patent: August 11, 2020
    Assignee: Sony Corporation
    Inventors: Nanako Kato, Toshifumi Wakano, Yusuke Tanaka, Yusuke Otake
  • Publication number: 20200251508
    Abstract: A solid-state imaging device according to the present disclosure includes a photoelectric conversion film that is provided outside a semiconductor substrate on a pixel-by-pixel basis, performs photoelectric conversion on light having a predetermined wavelength range, and transmits light having wavelength ranges other than the predetermined wavelength range, and a photoelectric conversion region that is provided inside the semiconductor substrate on a pixel-by-pixel basis and performs photoelectric conversion on the light having the wavelength ranges, the light having the wavelength ranges having passed through the photoelectric conversion film. The photoelectric conversion film includes a film having an avalanche function.
    Type: Application
    Filed: April 20, 2020
    Publication date: August 6, 2020
    Inventors: NANAKO KATO, TOSHIFUMI WAKANO, YUSUKE OTAKE
  • Patent number: 10714519
    Abstract: Provided is a solid-state imaging device including a lamination-type backside illumination CMOS (Complementary Metal Oxide Semiconductor) image sensor having a global shutter function. The solid-state imaging device includes a separation film including one of a light blocking film and a light absorbing film between a memory and a photo diode.
    Type: Grant
    Filed: July 23, 2019
    Date of Patent: July 14, 2020
    Assignee: Sony Corporation
    Inventors: Nanako Kato, Toshifumi Wakano
  • Patent number: 10651222
    Abstract: A solid-state imaging device according to the present disclosure includes: a photoelectric conversion film that is provided outside a semiconductor substrate on a pixel-by-pixel basis, performs photoelectric conversion on light having a predetermined wavelength range, and transmits light having wavelength ranges other than the predetermined wavelength range; and a photoelectric conversion region that is provided inside the semiconductor substrate on a pixel-by-pixel basis and performs photoelectric conversion on the light having the wavelength ranges, the light having the wavelength ranges having passed through the photoelectric conversion film. The photoelectric conversion film includes a film having an avalanche function.
    Type: Grant
    Filed: January 18, 2017
    Date of Patent: May 12, 2020
    Assignee: SONY CORPORATION
    Inventors: Nanako Kato, Toshifumi Wakano, Yusuke Otake
  • Patent number: 10586818
    Abstract: A solid-state imaging device includes a plurality of photoelectric conversion units, a floating diffusion unit that is shared by the plurality of photoelectric conversion units and converts electric charge generated in each of the plurality of photoelectric conversion units into a voltage signal, a plurality of transfer units that are respectively provided in the plurality of photoelectric conversion units and transfer the electric charge generated in the plurality of photoelectric conversion units to the floating diffusion unit, a first transistor group that is electrically connected to the floating diffusion unit and includes a gate and source/drain which are arranged with a first layout configuration, and a second transistor group that is electrically connected to the floating diffusion unit, includes a gate and source/drain arranged with a second layout configuration symmetrical to the first layout configuration, and is provided in a separate area from the first transistor group.
    Type: Grant
    Filed: December 7, 2018
    Date of Patent: March 10, 2020
    Assignee: Sony Corporation
    Inventors: Nanako Kato, Toshifumi Wakano, Atsuhiko Yamamoto
  • Publication number: 20190348450
    Abstract: Provided is a solid-state imaging device including a lamination-type backside illumination CMOS (Complementary Metal Oxide Semiconductor) image sensor having a global shutter function. The solid-state imaging device includes a separation film including one of a light blocking film and a light absorbing film between a memory and a photo diode.
    Type: Application
    Filed: July 23, 2019
    Publication date: November 14, 2019
    Applicant: Sony Corporation
    Inventors: Nanako Kato, Toshifumi Wakano
  • Patent number: 10463230
    Abstract: An endoscope power supply system includes an endoscope including an imaging unit that images an object, a housing apparatus to which the endoscope is detachably connected, a plurality of power source units that are provided in the housing apparatus and configured to output electric power different from one another, switches each provided in an output stage of each of the power source units of the housing apparatus and formed of two FETs that are back-to-back connected, and a controller that is provided in the housing apparatus, selects a power source unit necessary to operate the endoscope from the power source units, and controls the switches to output electric power generated by the selected power source unit to the endoscope.
    Type: Grant
    Filed: September 22, 2017
    Date of Patent: November 5, 2019
    Assignee: OLYMPUS CORPORATION
    Inventors: Takehide Fujimoto, Nanako Ubayama, Hitoshi Komine, Yutaka Fujisawa, Hideki Kato, Sadaaki Tomura
  • Patent number: 10381390
    Abstract: Provided is a solid-state imaging device including a lamination-type backside illumination CMOS (Complementary Metal Oxide Semiconductor) image sensor having a global shutter function. The solid-state imaging device includes a separation film including one of a light blocking film and a light absorbing film between a memory and a photo diode.
    Type: Grant
    Filed: May 15, 2018
    Date of Patent: August 13, 2019
    Assignee: Sony Corporation
    Inventors: Nanako Kato, Toshifumi Wakano
  • Publication number: 20190115379
    Abstract: A solid-state imaging device includes a plurality of photoelectric conversion units, a floating diffusion unit that is shared by the plurality of photoelectric conversion units and converts electric charge generated in each of the plurality of photoelectric conversion units into a voltage signal, a plurality of transfer units that are respectively provided in the plurality of photoelectric conversion units and transfer the electric charge generated in the plurality of photoelectric conversion units to the floating diffusion unit, a first transistor group that is electrically connected to the floating diffusion unit and includes a gate and source/drain which are arranged with a first layout configuration, and a second transistor group that is electrically connected to the floating diffusion unit, includes a gate and source/drain arranged with a second layout configuration symmetrical to the first layout configuration, and is provided in a separate area from the first transistor group.
    Type: Application
    Filed: December 7, 2018
    Publication date: April 18, 2019
    Inventors: Nanako Kato, Toshifumi Wakano, Atsuhiko Yamamoto
  • Publication number: 20190088693
    Abstract: A solid-state imaging device according to the present disclosure includes: a photoelectric conversion film that is provided outside a semiconductor substrate on a pixel-by-pixel basis, performs photoelectric conversion on light having a predetermined wavelength range, and transmits light having wavelength ranges other than the predetermined wavelength range; and a photoelectric conversion region that is provided inside the semiconductor substrate on a pixel-by-pixel basis and performs photoelectric conversion on the light having the wavelength ranges, the light having the wavelength ranges having passed through the photoelectric conversion film. The photoelectric conversion film includes a film having an avalanche function.
    Type: Application
    Filed: January 18, 2017
    Publication date: March 21, 2019
    Inventors: NANAKO KATO, TOSHIFUMI WAKANO, YUSUKE OTAKE
  • Publication number: 20190067361
    Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency. In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.
    Type: Application
    Filed: October 23, 2018
    Publication date: February 28, 2019
    Applicant: Sony Corporation
    Inventors: Nanako Kato, Toshifumi Wakano, Yusuke Tanaka, Yusuke Otake
  • Patent number: 10186533
    Abstract: A solid-state imaging device includes a plurality of photoelectric conversion units, a floating diffusion unit that is shared by the plurality of photoelectric conversion units and converts electric charge generated in each of the plurality of photoelectric conversion units into a voltage signal, a plurality of transfer units that are respectively provided in the plurality of photoelectric conversion units and transfer the electric charge generated in the plurality of photoelectric conversion units to the floating diffusion unit, a first transistor group that is electrically connected to the floating diffusion unit and includes a gate and source/drain which are arranged with a first layout configuration, and a second transistor group that is electrically connected to the floating diffusion unit, includes a gate and source/drain arranged with a second layout configuration symmetrical to the first layout configuration, and is provided in a separate area from the first transistor group.
    Type: Grant
    Filed: September 6, 2016
    Date of Patent: January 22, 2019
    Assignee: Sony Corporation
    Inventors: Nanako Kato, Toshifumi Wakano, Atsuhiko Yamamoto
  • Publication number: 20190007631
    Abstract: Imaging devices and electronic apparatuses with one or more shared pixel structures are provided. The shared pixel structure includes a plurality of photoelectric conversion devices or photodiodes. Each photodiode in the shared pixel structure is located within a rectangular area. The shared pixel structure also includes a plurality of shared transistors. The shared transistors in the shared pixel structure are located adjacent the photoelectric conversion devices of the shared pixel structure. The rectangular area can have two short sides and two long sides, with the shared transistors located along one of the long sides. In addition, a length of one or more of the transistors can be extended in a direction parallel to the long side of the rectangular area.
    Type: Application
    Filed: September 5, 2018
    Publication date: January 3, 2019
    Inventors: NANAKO KATO, TOSHIFUMI WAKANO, YUSUKE OTAKE
  • Patent number: 10134797
    Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency. In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.
    Type: Grant
    Filed: November 14, 2017
    Date of Patent: November 20, 2018
    Assignee: Sony Corporation
    Inventors: Nanako Kato, Toshifumi Wakano, Yusuke Tanaka, Yusuke Otake
  • Patent number: 10128300
    Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency. In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.
    Type: Grant
    Filed: November 14, 2017
    Date of Patent: November 13, 2018
    Assignee: Sony Corporation
    Inventors: Nanako Kato, Toshifumi Wakano, Yusuke Tanaka, Yusuke Otake
  • Publication number: 20180261635
    Abstract: Provided is a solid-state imaging device including a lamination-type backside illumination CMOS (Complementary Metal Oxide Semiconductor) image sensor having a global shutter function. The solid-state imaging device includes a separation film including one of a light blocking film and a light absorbing film between a memory and a photo diode.
    Type: Application
    Filed: May 15, 2018
    Publication date: September 13, 2018
    Applicant: Sony Corporation
    Inventors: Nanako Kato, Toshifumi Wakano
  • Publication number: 20180261644
    Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency. In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.
    Type: Application
    Filed: November 14, 2017
    Publication date: September 13, 2018
    Applicant: Sony Corporation
    Inventors: Nanako Kato, Toshifumi Wakano, Yusuke Tanaka, Yusuke Otake
  • Patent number: 10074678
    Abstract: A solid-state imaging device includes a plurality of photoelectric conversion units, a floating diffusion unit that is shared by the plurality of photoelectric conversion units and converts electric charge generated in each of the plurality of photoelectric conversion units into a voltage signal, a plurality of transfer units that are respectively provided in the plurality of photoelectric conversion units and transfer the electric charge generated in the plurality of photoelectric conversion units to the floating diffusion unit, a first transistor group that is electrically connected to the floating diffusion unit and includes a gate and source/drain which are arranged with a first layout configuration, and a second transistor group that is electrically connected to the floating diffusion unit, includes a gate and source/drain arranged with a second layout configuration symmetrical to the first layout configuration, and is provided in a separate area from the first transistor group.
    Type: Grant
    Filed: August 17, 2012
    Date of Patent: September 11, 2018
    Assignee: Sony Corporation
    Inventors: Nanako Kato, Toshifumi Wakano, Atsuhiko Yamamoto
  • Patent number: 10075659
    Abstract: Imaging devices and electronic apparatuses with one or more shared pixel structures are provided. The shared pixel structure includes a plurality of photoelectric conversion devices or photodiodes. Each photodiode in the shared pixel structure is located within a rectangular area. The shared pixel structure also includes a plurality of shared transistors. The shared transistors in the shared pixel structure are located adjacent the photoelectric conversion devices of the shared pixel structure. The rectangular area can have two short sides and two long sides, with the shared transistors located along one of the long sides. In addition, a length of one or more of the transistors can be extended in a direction parallel to the long side of the rectangular area.
    Type: Grant
    Filed: February 20, 2015
    Date of Patent: September 11, 2018
    Assignee: SONY CORPORATION
    Inventors: Nanako Kato, Toshifumi Wakano, Yusuke Otake