Patents by Inventor Nanako Kato
Nanako Kato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10128300Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency. In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.Type: GrantFiled: November 14, 2017Date of Patent: November 13, 2018Assignee: Sony CorporationInventors: Nanako Kato, Toshifumi Wakano, Yusuke Tanaka, Yusuke Otake
-
Publication number: 20180261635Abstract: Provided is a solid-state imaging device including a lamination-type backside illumination CMOS (Complementary Metal Oxide Semiconductor) image sensor having a global shutter function. The solid-state imaging device includes a separation film including one of a light blocking film and a light absorbing film between a memory and a photo diode.Type: ApplicationFiled: May 15, 2018Publication date: September 13, 2018Applicant: Sony CorporationInventors: Nanako Kato, Toshifumi Wakano
-
Publication number: 20180261644Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency. In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.Type: ApplicationFiled: November 14, 2017Publication date: September 13, 2018Applicant: Sony CorporationInventors: Nanako Kato, Toshifumi Wakano, Yusuke Tanaka, Yusuke Otake
-
Patent number: 10075659Abstract: Imaging devices and electronic apparatuses with one or more shared pixel structures are provided. The shared pixel structure includes a plurality of photoelectric conversion devices or photodiodes. Each photodiode in the shared pixel structure is located within a rectangular area. The shared pixel structure also includes a plurality of shared transistors. The shared transistors in the shared pixel structure are located adjacent the photoelectric conversion devices of the shared pixel structure. The rectangular area can have two short sides and two long sides, with the shared transistors located along one of the long sides. In addition, a length of one or more of the transistors can be extended in a direction parallel to the long side of the rectangular area.Type: GrantFiled: February 20, 2015Date of Patent: September 11, 2018Assignee: SONY CORPORATIONInventors: Nanako Kato, Toshifumi Wakano, Yusuke Otake
-
Patent number: 10074678Abstract: A solid-state imaging device includes a plurality of photoelectric conversion units, a floating diffusion unit that is shared by the plurality of photoelectric conversion units and converts electric charge generated in each of the plurality of photoelectric conversion units into a voltage signal, a plurality of transfer units that are respectively provided in the plurality of photoelectric conversion units and transfer the electric charge generated in the plurality of photoelectric conversion units to the floating diffusion unit, a first transistor group that is electrically connected to the floating diffusion unit and includes a gate and source/drain which are arranged with a first layout configuration, and a second transistor group that is electrically connected to the floating diffusion unit, includes a gate and source/drain arranged with a second layout configuration symmetrical to the first layout configuration, and is provided in a separate area from the first transistor group.Type: GrantFiled: August 17, 2012Date of Patent: September 11, 2018Assignee: Sony CorporationInventors: Nanako Kato, Toshifumi Wakano, Atsuhiko Yamamoto
-
Patent number: 10002897Abstract: Provided is a solid-state imaging device including a lamination-type backside illumination CMOS (Complementary Metal Oxide Semiconductor) image sensor having a global shutter function. The solid-state imaging device includes a separation film including one of a light blocking film and a light absorbing film between a memory and a photo diode.Type: GrantFiled: May 17, 2017Date of Patent: June 19, 2018Assignee: Sony CorporationInventors: Nanako Kato, Toshifumi Wakano
-
Publication number: 20180083062Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency. In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.Type: ApplicationFiled: November 14, 2017Publication date: March 22, 2018Applicant: Sony CorporationInventors: Nanako Kato, Toshifumi Wakano, Yusuke Tanaka, Yusuke Otake
-
Publication number: 20180069045Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency. In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.Type: ApplicationFiled: November 14, 2017Publication date: March 8, 2018Applicant: Sony CorporationInventors: Nanako Kato, Toshifumi Wakano, Yusuke Tanaka, Yusuke Otake
-
Patent number: 9865643Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency. In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.Type: GrantFiled: June 22, 2017Date of Patent: January 9, 2018Assignee: Sony CorporationInventors: Nanako Kato, Toshifumi Wakano, Yusuke Tanaka, Yusuke Otake
-
Publication number: 20170287972Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency. In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.Type: ApplicationFiled: June 22, 2017Publication date: October 5, 2017Applicant: Sony CorporationInventors: Nanako Kato, Toshifumi Wakano, Yusuke Tanaka, Yusuke Otake
-
Patent number: 9773835Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency. In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.Type: GrantFiled: December 30, 2016Date of Patent: September 26, 2017Assignee: Sony CorporationInventors: Nanako Kato, Toshifumi Wakano, Yusuke Tanaka, Yusuke Otake
-
Publication number: 20170250210Abstract: Provided is a solid-state imaging device including a lamination-type backside illumination CMOS (Complementary Metal Oxide Semiconductor) image sensor having a global shutter function. The solid-state imaging device includes a separation film including one of a light blocking film and a light absorbing film between a memory and a photo diode.Type: ApplicationFiled: May 17, 2017Publication date: August 31, 2017Inventors: Nanako Kato, Toshifumi Wakano
-
Patent number: 9679932Abstract: Provided is a solid-state imaging device including a lamination-type backside illumination CMOS (Complementary Metal Oxide Semiconductor) image sensor having a global shutter function. The solid-state imaging device includes a separation film including one of a light blocking film and a light absorbing film between a memory and a photo diode.Type: GrantFiled: January 12, 2016Date of Patent: June 13, 2017Assignee: Sony CorporationInventors: Nanako Kato, Toshifumi Wakano
-
Publication number: 20170110503Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency. In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.Type: ApplicationFiled: December 30, 2016Publication date: April 20, 2017Applicant: Sony CorporationInventors: Nanako Kato, Toshifumi Wakano, Yusuke Tanaka, Yusuke Otake
-
Publication number: 20170013211Abstract: Imaging devices and electronic apparatuses with one or more shared pixel structures are provided. The shared pixel structure includes a plurality of photoelectric conversion devices or photodiodes. Each photodiode in the shared pixel structure is located within a rectangular area. The shared pixel structure also includes a plurality of shared transistors. The shared transistors in the shared pixel structure are located adjacent the photoelectric conversion devices of the shared pixel structure. The rectangular area can have two short sides and two long sides, with the shared transistors located along one of the long sides. In addition, a length of one or more of the transistors can be extended in a direction parallel to the long side of the rectangular area.Type: ApplicationFiled: February 20, 2015Publication date: January 12, 2017Inventors: NANAKO KATO, TOSHIFUMI WAKANO, YUSUKE OTAKE
-
Publication number: 20160372504Abstract: A solid-state imaging device includes a plurality of photoelectric conversion units, a floating diffusion unit that is shared by the plurality of photoelectric conversion units and converts electric charge generated in each of the plurality of photoelectric conversion units into a voltage signal, a plurality of transfer units that are respectively provided in the plurality of photoelectric conversion units and transfer the electric charge generated in the plurality of photoelectric conversion units to the floating diffusion unit, a first transistor group that is electrically connected to the floating diffusion unit and includes a gate and source/drain which are arranged with a first layout configuration, and a second transistor group that is electrically connected to the floating diffusion unit, includes a gate and source/drain arranged with a second layout configuration symmetrical to the first layout configuration, and is provided in a separate area from the first transistor group.Type: ApplicationFiled: September 6, 2016Publication date: December 22, 2016Inventors: Nanako Kato, Toshifurni Wakano, Atsuhiko Yamamoto
-
Publication number: 20160126266Abstract: Provided is a solid-state imaging device including a lamination-type backside illumination CMOS (Complementary Metal Oxide Semiconductor) image sensor having a global shutter function. The solid-state imaging device includes a separation film including one of a light blocking film and a light absorbing film between a memory and a photo diode.Type: ApplicationFiled: January 12, 2016Publication date: May 5, 2016Inventors: Nanako Kato, Toshifumi Wakano
-
Patent number: 9324753Abstract: Provided is a solid-state imaging device including a lamination-type backside illumination CMOS (Complementary Metal Oxide Semiconductor) image sensor having a global shutter function. The solid-state imaging device includes a separation film including one of a light blocking film and a light absorbing film between a memory and a photo diode.Type: GrantFiled: November 3, 2014Date of Patent: April 26, 2016Assignee: Sony CorporationInventors: Nanako Kato, Toshifumi Wakano
-
Publication number: 20150129943Abstract: Provided is a solid-state imaging device including a lamination-type backside illumination CMOS (Complementary Metal Oxide Semiconductor) image sensor having a global shutter function. The solid-state imaging device includes a separation film including one of a light blocking film and a light absorbing film between a memory and a photo diode.Type: ApplicationFiled: November 3, 2014Publication date: May 14, 2015Inventors: Nanako Kato, Toshifumi Wakano
-
Publication number: 20130049082Abstract: A solid-state imaging device includes a plurality of photoelectric conversion units, a floating diffusion unit that is shared by the plurality of photoelectric conversion units and converts electric charge generated in each of the plurality of photoelectric conversion units into a voltage signal, a plurality of transfer units that are respectively provided in the plurality of photoelectric conversion units and transfer the electric charge generated in the plurality of photoelectric conversion units to the floating diffusion unit, a first transistor group that is electrically connected to the floating diffusion unit and includes a gate and source/drain which are arranged with a first layout configuration, and a second transistor group that is electrically connected to the floating diffusion unit, includes a gate and source/drain arranged with a second layout configuration symmetrical to the first layout configuration, and is provided in a separate area from the first transistor group.Type: ApplicationFiled: August 17, 2012Publication date: February 28, 2013Applicant: Sony CorporationInventors: Nanako Kato, Toshifumi Wakano, Atsuhiko Yamamoto